Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    P06P03LV Search Results

    P06P03LV Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    P06P03LV Niko Semiconductor P-Channel Logic Level Enhancement FET Original PDF
    P06P03LVG Niko Semiconductor P-Channel Logic Level Enhancement FET Original PDF

    P06P03LV Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    P06P03

    Abstract: p-Channel Logic Level Enhancement Mode P06P03LV NIKO-SEM nikos field effect transistor
    Text: P-Channel Logic Level Enhancement NIKO-SEM P06P03LV Mode Field Effect Transistor SOP-8 D PRODUCT SUMMARY V BR DSS RDS(ON) ID -30 45mΩ -6A 4 :GATE 5,6,7,8 :DRAIN 1,2,3 :SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS


    Original     		PDF P06P03LV MAY-19-2003 P06P03 p-Channel Logic Level Enhancement Mode P06P03LV NIKO-SEM nikos field effect transistor

    P06P03LVG

    Abstract: P06P03 niko-sem
    Text: P-Channel Logic Level Enhancement NIKO-SEM P06P03LVG Mode Field Effect Transistor SOP-8 Lead-Free D PRODUCT SUMMARY V BR DSS RDS(ON) ID -30 45mΩ -6A 4 :GATE 5,6,7,8 :DRAIN 1,2,3 :SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS


    Original     		PDF P06P03LVG JUN-10-2004 P06P03LVG P06P03 niko-sem

    P70N02LDG

    Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G
    Text: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG


    Original     		PDF O-263 P45N02LSG P45N03LTG P75N02LSG P75N02LTG P0903BSG P0903BTG P3055LSG P3055LTG P50N03LSG P70N02LDG p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G

    Untitled

    Abstract: No abstract text available
    Text: Single P-channel MOSFET ELM34417AA-N •General description ■Features ELM34417AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-30V Id=-6A Rds(on) < 45mΩ (Vgs=-10V) Rds(on) < 75mΩ (Vgs=-4.5V)


    Original     		PDF ELM34417AA-N ELM34417AA-N P06P03LVG JUN-10-2004

    ELM34417AA

    Abstract: No abstract text available
    Text: 单 P 沟道 MOSFET ELM34417AA-N •概要 ■特点 ELM34417AA-N 是 P 沟道低输入电容，低工作电 •Vds=-30V 压，低导通电阻的大电流 MOSFET。 ·Id=-6A ·Rds on < 45mΩ (Vgs=-10V) ·Rds(on) < 75mΩ (Vgs=-4.5V) ■绝对最大额定值


    Original     		PDF ELM34417AA-N P06P03LVG JUN-10-2004 ELM34417AA

    Untitled

    Abstract: No abstract text available
    Text: Single P-channel MOSFET ELM34417AA-N •General description ■Features ELM34417AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-30V Id=-6A Rds(on) < 45mΩ (Vgs=-10V) Rds(on) < 75mΩ (Vgs=-4.5V)


    Original     		PDF ELM34417AA-N ELM34417AA-N P06P03LVG JUN-10-2004

    P06P03

    Abstract: No abstract text available
    Text: シングル P チャンネル MOSFET ELM34417AA-N •概要 ■特長 ELM34417AA-N は低入力容量 低電圧駆動、 低 ・ Vds=-30V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=-6A ・ Rds on < 45mΩ (Vgs=-10V) ・ Rds(on) < 75mΩ (Vgs=-4.5V)


    Original     		PDF ELM34417AA-N P06P03LVG JUN-10-2004 P06P03