Untitled
Abstract: No abstract text available
Text: Single P-channel MOSFET ELM34417AA-N •General description ■Features ELM34417AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-30V Id=-6A Rds(on) < 45mΩ (Vgs=-10V) Rds(on) < 75mΩ (Vgs=-4.5V)
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ELM34417AA-N
ELM34417AA-N
P06P03LVG
JUN-10-2004
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ELM34417AA
Abstract: No abstract text available
Text: 单 P 沟道 MOSFET ELM34417AA-N •概要 ■特点 ELM34417AA-N 是 P 沟道低输入电容，低工作电 •Vds=-30V 压，低导通电阻的大电流 MOSFET。 ·Id=-6A ·Rds on < 45mΩ (Vgs=-10V) ·Rds(on) < 75mΩ (Vgs=-4.5V) ■绝对最大额定值
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Original
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PDF
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ELM34417AA-N
P06P03LVG
JUN-10-2004
ELM34417AA
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Untitled
Abstract: No abstract text available
Text: Single P-channel MOSFET ELM34417AA-N •General description ■Features ELM34417AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-30V Id=-6A Rds(on) < 45mΩ (Vgs=-10V) Rds(on) < 75mΩ (Vgs=-4.5V)
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Original
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PDF
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ELM34417AA-N
ELM34417AA-N
P06P03LVG
JUN-10-2004
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P06P03
Abstract: No abstract text available
Text: シングル P チャンネル MOSFET ELM34417AA-N •概要 ■特長 ELM34417AA-N は低入力容量 低電圧駆動、 低 ・ Vds=-30V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=-6A ・ Rds on < 45mΩ (Vgs=-10V) ・ Rds(on) < 75mΩ (Vgs=-4.5V)
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ELM34417AA-N
P06P03LVG
JUN-10-2004
P06P03
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L25C
Abstract: No abstract text available
Text: Single P-channel MOSFET ELM34417AA-N • General description B F e a tu re s E L M 34417A A -N u s e s ad v an c e d tre n c h te ch n o lo g y to provide excellent Rds on , low gate charge • V d s= -3 0 V and low • Id=-6A gate re sista n ce . • Rds(on) <
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OCR Scan
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ELM34417AA-N
ELM34417AA-N
L25C
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