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    P-CHANNEL FET 100V Search Results

    P-CHANNEL FET 100V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RBA250N10CHPF-4UA02#GB0 Renesas Electronics Corporation 100V - 250A - N-channel Power MOS FET, MP-25ZU, /Embossed Tape Visit Renesas Electronics Corporation
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    P-CHANNEL FET 100V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ZVP2120A

    Abstract: to92 fet p channel DSA003787
    Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2120C ZVP2120A ISSUE 2 – MARCH 94 FEATURES * 200 Volt VDS * RDS on =25Ω ISSUE 2 – MARCH 94 FEATURES * 200 Volt VDS * RDS(on)=25Ω G REFER TO ZVP2120A FOR GRAPHS


    Original     		PDF ZVP2120C ZVP2120A ZVP2120A to92 fet p channel DSA003787

    ZVP2120A

    Abstract: P-Channel FET 100v to92
    Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2120C ZVP2120A ISSUE 2 – MARCH 94 FEATURES * 200 Volt VDS * RDS on =25Ω ISSUE 2 – MARCH 94 FEATURES * 200 Volt VDS * RDS(on)=25Ω G REFER TO ZVP2120A FOR GRAPHS


    Original     		PDF ZVP2120C ZVP2120A ZVP2120A P-Channel FET 100v to92

    ZVP2110A

    Abstract: P-Channel FET 100v to92 to92 fet p channel DSA003787
    Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2110C P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2110A ISSUE 2 – MARCH 94 FEATURES * 100 Volt VDS * RDS on =8Ω ISSUE 2 – MARCH 94 FEATURES * 100 Volt VDS * RDS(on)=8Ω G REFER TO ZVP2110A FOR GRAPHS


    Original     		PDF ZVP2110C ZVP2110A ZVP2110A P-Channel FET 100v to92 to92 fet p channel DSA003787

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. TN5335 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage Complementary N- and P-channel devices


    Original     		PDF TN5335 DSFP-TN5335 A080712

    ciss 200v

    Abstract: IRFE310
    Text: Search Results Part number search for devices beginning "IRF9140" Datasheets are downloaded as Acrobat PDF files. Semelab Home Fet Products ID cont (A) PD (W) RDSS (Ω) CISS (pF) QG (nC) PRODUCT Polarity Package VDSS (V) IRF9140 P-Channel TO3 100V 18A 125W


    Original     		PDF IRF9140" IRF9140 IRF9140-JQR-B IRF9140SMD IRF9140SMD-JQR-B O276AB) 1400pF ciss 200v IRFE310

    MIL-STD-806

    Abstract: tc5000 TC40H000 rca thyristor manual TC4069 OSCILLATOR tc-74ic mc14500b mc14500 shockley diode application IC - TC4001BP
    Text: OUTLINE 1. C2HOS IC Family 1.1 CMOS and C 2M0S "CMOS" is an abbreviation of "Complementary Metal Oxide Semi­ conductor", and "Complementary" means to combine P-channel type MOS FET and N-channel type MOS FET complementarily. The CMOS circuit configuration, since its announcement at ISSCC in 1963, attracted


    OCR Scan     		PDF

    TC4069 OSCILLATOR

    Abstract: TC40HXXX tc4011bp applications MC14500B Industrial Control Unit cmos integrated circuits TC4069 equivalent
    Text: OUTLINE 1. C 2M0S I C F a mi ly 1.1 CMOS and C 2M0S "CMOS" is an abbreviation of "Complementary Metal Oxide Semi­ conductor", and "Complementary" means to combine P-channel type MOS FET and N-channel type MOS FET complementarily. The CMOS circuit configuration, since its announcement at ISSCC in 1963, attracted


    OCR Scan     		PDF

    2SK1036

    Abstract: No abstract text available
    Text: P o w e r F-MOS FET 2SK10 3 6 2S K 1036 Silicon N-channel Power F-M OS FET P ackage Dimensions • F eatures • Low ON resistance RCs on : RDs (on) = 0.211 (typ.) • High switching rate : tf = 80ns (typ.) • No secondary breakdown Unit: mm Di uvJ i o


    OCR Scan     		PDF 2SK1036 O-220 D01713Ã 2SK1036

    2SK1267

    Abstract: SC-65 D 1169 25
    Text: P ow er F-MOS FET 2SK1267 2SK1267 Silicon N-channel Power F-MOS FET Package Dimensions • Features • Low ON resista n ce R » o n : R t>; (on) 1 - 0 .0 7 il (typ.) Unt: mm • High sw itching ra te : ti = 180n s (ty p .) • No secondary breakdown • High breakdown voltage


    OCR Scan     		PDF 2SK1267 180ns VW-10V. 2SK1267 SC-65 D 1169 25

    2SK1118

    Abstract: 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220
    Text: Power MOS FET tc-MOS Application Type No. N-CHANNEL P-CHANNEL 2SJ200 2SJ201 Audio Power Amp. 2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 DC/DC Converter 2SK387 Motor Driver 2SK3B8 2SK572 2SK578 2SK573 2SK447 2SK1641 2SK945 2SK528 2SK529 2SK530 2SK531


    OCR Scan     		PDF 2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 2SK387 2SK572 2SK578 2SK1118 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220

    Untitled

    Abstract: No abstract text available
    Text: 2SK1817-M SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET _ T¥T - F - lll • Features r p n i r o E R o I E b Outline Drawings • High current • Low no-resistance • No secondary b reakd ow n


    OCR Scan     		PDF 2SK1817-M 1817-M

    2sk mosfet

    Abstract: C 5388 controler 2SK906 SC-65 T151 2sk 100a
    Text: 2SK906 FUJI POWER MOS-FET N CHANNEL SILICON POWER MOS-FET F-I SERIES lOutline Drawings • Features • High current • Low on-resistance • No secondary breakdown • Low driving power ■A p plicatio ns • DC-DC converters • M otor controlers • General purpose pow er amplifier


    OCR Scan     		PDF 2SK906 SC-65 2sk mosfet C 5388 controler 2SK906 SC-65 T151 2sk 100a

    Untitled

    Abstract: No abstract text available
    Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BSS123A ISSUE 4 -A PR IL 1998_ FEATURES * BVdss = 100V * Low Threshold PARTMARKING D ETAIL - SAA ABSOLUTE M AXIM UM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V p s Drain-Gate Voltage


    OCR Scan     		PDF BSS123A 170mA 280mA

    2SK1264

    Abstract: 2SK12 H150
    Text: P o w e r F-MOS FET 2SK12Ó4 2SK1264 Silicon N-channel Power F-MOS FET Package Dimensions • Features • L ow ON r e s is ta n c e R ds on : R DS (on) l = 0 . 7 i i (ty p .) Unit: mm • High sw itch in g ra te : tf = 3 6 n s (ty p .) • No seco n d a ry breakdow n


    OCR Scan     		PDF 2SK12Ã 2SK1264 2SK1264 2SK12 H150

    2SK1036

    Abstract: mqs 6 2SK103
    Text: P ow er F-MOS FET 2SK1036 2SK1036 Silicon N-channel Power F-MOS FET Package Dimensions • Features U ni: nan • Low ON resistance Kl* on : Ri„ (on) = 0 .2 il (typ.) • High sw itc h in g r a t e : t« » 8 0 n s (ty p .) M —t 10 2 « a . • No secondary breakdown


    OCR Scan     		PDF 2SK1036 O-220 2SK1036 mqs 6 2SK103

    2SK1036

    Abstract: No abstract text available
    Text: Power F-MOS FET 2SK1036 2SK1036 Silicon N-channel Power F-MOS FET Package Dimensions •Features • Low ON r e s is ta n c e R ds on : R ds (on) = 0 . 2 f t (ty p .) Unit: mm • High sw itch in g ra te : ti = 8 0 n s (ty p .) 5 7m ax. • No seco n d a ry breakdow n


    OCR Scan     		PDF 2SK1036 29max

    2SK804

    Abstract: No abstract text available
    Text: P o w e r F-MOS FET 2SK804 2SK804 Silicon N-channel Power F-MOS FET P a c k a g e D im e n s io n s • F e a tu re s • Low ON re sistan c e RDs on : RDs (on) = 0.08A (typ.) • High switching ra te : tf= 150ns (typ.) • No secondary breakdow n • High breakdow n voltage


    OCR Scan     		PDF 2SK804 150ns 2SK804

    td 1410

    Abstract: 2SK761
    Text: Power F-MOS FET 2SK761 2SK761 Silicon N-channel Power F-MOS FET • Features Package Dimensions • Low ON r e s is ta n c e R Db on : R ds (on) = 0 . 1 5 f i (ty p .) Unit: mm 5.2max. 15 5max. • High sw itch in g ra te : tf = 1 2 0 n s (ty p .) • No seco n d a ry breakdow n


    OCR Scan     		PDF 2SK761 120ns td 1410 2SK761

    1C00

    Abstract: 2SK805
    Text: P o w er F-MOS FET 2SK 805 2SK805 Silicon N-channel Power F-MOS FET • Features Package Dimensions • Low O N r e s is ta n c e R Ds on : R Ds (on) = 0 .1 2 il (ty p .) • H igh sw itch in g r a te : t f = 120ns (ty p .) • N o se c o n d a ry b reak d o w n


    OCR Scan     		PDF 2SK805 120ns 0D171D0 1C00 2SK805

    controler

    Abstract: 2SK906 SC-65 T151
    Text: 2SK906 FUJI POWER MOS-FET N CHANNEL SILICON POWER MOS-FET F-I SERIES lOutline Drawings • Features • High current • Low on-resistan ce • No secondary b rea kd o w n • Low driving p o w er ■A pplications • D C -D C converters • M o to r co n tro lers


    OCR Scan     		PDF 2SK906 SC-65 controler 2SK906 SC-65 T151

    2SK755

    Abstract: TCI-220 251C
    Text: Power F-MOS FET 2SK755 2SK755 Silicon N-channel Power F-MOS FET • Package Dim ensions ■ Features • L ow ON r e s is ta n c e R DS : R ds, on = 0 . 3 3 0 (ty p .) Unit: mm • High sw itch in g r a te : tf = 4 5 n s (ty p .) • N o seco n d a ry breakdow n


    OCR Scan     		PDF 2SK755 TCI-220 0D170bE 2SK755 251C

    Untitled

    Abstract: No abstract text available
    Text: MAE J> m SO LIT RO N DEVICES INC ics r a m i rs\n iirr-ir fl3bflb02 OGDBSflM SG3 « S O P Q A T Ä L O Q _ P-CHANNEL ENHANCEMENT MOS FET -100V.-12A. o.3n JAA JAB SDF9130 SDF9130 FEATURES • RUGGED PACKAGE HI-REL CONSTRUCTION • CERAMIC EYELETS


    OCR Scan     		PDF fl3bflb02 -100V SDF9130 MIL-S-19500

    2sk12a

    Abstract: D 1163 2SK12 2SK1264
    Text: P o w er F-MOS FET 2SK12Ó4 2S K 1264 Silicon N-channel Power F-M O S FET P ackage Dimensions • Features • L ow ON r e s is ta n c e R ds on : RDS (on) l = 0 .7 1 i (ty p .) Unit: mm • H igh sw itch in g r a te : t f = 3 6 n s (ty p .) • No se c o n d a ry b reak d o w n


    OCR Scan     		PDF 2SK12Ã 2SK1264 O-220 2sk12a D 1163 2SK12 2SK1264

    diode DS10

    Abstract: No abstract text available
    Text: Panasonic Power Transistor Arrays F-MOS FETs PUB4701 Silicon N-Channel Power F-MOS FET • Features 0 Avalanche energy capacity guaranteed • High-speed switching • Low ON-resistance 0 No secondary breakdown 0 Low-voltage drive ■ A p p lic a tio n s


    OCR Scan     		PDF PUB4701 pul10V, diode DS10