marking JT
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components Micro Commercial Components 20736 Marilla Street Chatsworth CA 91311 Phone: 818 701-4933 Fax: (818) 701-4939 BAS28 Features • • • • • • • • • Continuous reverse voltage:max.75V High switching speed:4ns.
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BAS28
500mA
OT-143
marking JT
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Untitled
Abstract: No abstract text available
Text: • bbS3T31 QQ23ti2S 353 ■ APX BF994S N AP1ER PHILIPS/DISCRETE b7E D J V SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected and intended fo r V H F applications in television tuners.
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bbS3T31
QQ23ti2S
BF994S
OT143
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Untitled
Abstract: No abstract text available
Text: BF996S _ J SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected and intended for UHF applications in television tuners. The device is also suitable for use in professional communication equipment.
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BF996S
OT143
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BF994S
Abstract: L7E transistor n Power mosfet depletion free transistor bs 200
Text: bbS3T31 CmE3Li2S MST APX BF994S N AP1ER P H I L I P S / D I S C R E T E b?E I SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 m icrom iniature envelope w ith source and substrate interconnected and intended fo r VHF applications in television tuners.
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bbS3T31
BF994S
OT143
BF994S
L7E transistor
n Power mosfet depletion
free transistor bs 200
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Abstract: No abstract text available
Text: • APX bbSBTBl QD2M73D bT4 N AMER PHILIPS/DISCRETE BF989 b7E D J K. SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected. This M O S-FET tetrode is intended for use in u.h.f. applications in television
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QD2M73D
BF989
OT143
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marking code 11G1
Abstract: No abstract text available
Text: • bbSB'iai 0024733 3T3 « A P X N AMER PHILIPS/DISCRETE BF990A b7E » SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected, intended for UHF applications, such as UHF television tuners with 12 V
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BF990A
OT143
bb53T31
0Q2473b
marking code 11G1
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marking code 11G1
Abstract: No abstract text available
Text: b b S B ' m 0DE4750 462 « A P X N AMER PHILIPS/DISCRETE BF996S b7E » y v . SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected and intended for UHF applications in television tuners.
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0DE4750
BF996S
OT143
marking code 11G1
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Untitled
Abstract: No abstract text available
Text: 711002b 00^75^4 Til IPHIN BF994S SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected and intended for VHF applications in television tuners. The device is also suitable for use in professional communication equipment.
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711002b
BF994S
OT143
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BF991
Abstract: G2S-50
Text: I bbSBTBl ÜG2473CÏ f i l l *APX N APIER PHILIPS/DISCRETE BF991 h?E D SIUCON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected. This MOS-FET tetrode is intended for use in v.h.f. applications, such as v.h.f.
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02473cÃ
BF991
OT143
200MHz
SQT103
BF991
G2S-50
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marking code g2s
Abstract: No abstract text available
Text: SIEMENS < *,0 0 5 S Silicon N-Channel MOSFET Tetrode •For low-noise, high gain-controlled input stages up to 1GH; ■Operating voltage 5V 1Integrated stabilized bias network X AGC o HF oIn p u t JX-Ih D ra in G2 I HF O u tp u t + DC G1 1 — r GND ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BF1005S
Q62702-F1665
OT-143
1005S
800MHz
BF1005S
marking code g2s
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Untitled
Abstract: No abstract text available
Text: • 7110öEb D0bfi7QS m s ■PHIN BF991 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic S0T143 microminiature envelope with source and substrate interconnected. This MOS-FET tetrode is intended for use in v.h.f. applications, such as v.h.f.
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BF991
S0T143
SQT103
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S3928
Abstract: Detector Diodes marking c sot23 marking sa2 Surface Mount RF Schottky Barrier Diodes
Text: 13 A lpha Plastic Packaged Surface Mount Schottky Mixer and Detector Diodes Features For High Volume Commercial Applications SOD 323 Industry Standard SO T-23, SO T-143, and S O D -323 Packages SOT 23 SOT 143 Tight Parameter Distribution High Signal Sensitivity
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T-143,
Q037\P-94r"
OT-143
--YO-10
S3928
Detector Diodes marking c
sot23 marking sa2
Surface Mount RF Schottky Barrier Diodes
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Untitled
Abstract: No abstract text available
Text: SIEMENS BAR 64-07 Silicon PIN Diode • • • • High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz Low resistance and short carrier lifetime For frequencies up to 3 GHz Type BAR64-07 Ordering Code tape and reel
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BAR64-07
Q62702-A1044
OT-143
flE35bG5
Q120EEÃ
235bQ
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Untitled
Abstract: No abstract text available
Text: SIEMENS BF 1005 Silicon N-Channel MOSFET Tetrode •For low-noise, gain-controlled input stages up to 1GHz ■Operating voltage 5V ■Integrated stabilized bias network Drain AGC o HF o Input HF Output + DC G1 1 GND ESD: Electrostatic discharge sensitive device, observe handling precaution!
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Q62702-F1498
OT-143
800MHz
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BF990
Abstract: BF990 M90 marking code g1s IEC134
Text: ' _ ;_ _ _ i i ~N AMER PHILIPS/DISCRETE OL E Al D • t.bS3T31 _ — 0013000 ■ ■ T ■ BF990 T-Z l-'Xtr SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic microminiature envelope with source and substrate
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q1300q
BF990
BF990
BF990 M90
marking code g1s
IEC134
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE OLE D • ■ fc.b53S31 0013000 T ■ - B F " ° r~3i-as~ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic microminiature envelope with source and substrate interconnected, intended for u.h.f. applications, such as u.h.f, television tuners and professional commu
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b53S31
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5b4 diode
Abstract: 5B4 IR BAT74 SCHOTTKY DIODE SOT-143 FI SOT-143
Text: m bb53T31 Ü0BM3M7 5b4 H A P X N AMER PH ILIPS/DISCRETE BAT74 b?E D SCHOTTKY BARRIER DIODE Tw o separate silicon epitaxial Schottky barrier diodes w ith an integrated p-n junction protection ring in one microminiature SO T-143 envelope, intended for surface mounting SMD technology .
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bb53131
BAT74
OT-143
00243MT
5b4 diode
5B4 IR
BAT74
SCHOTTKY DIODE SOT-143
FI SOT-143
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Untitled
Abstract: No abstract text available
Text: ObE D N AMER PHILIPS/DISCRETE _I t _ b b s a ^ i ooi3Qoa 4 BF994 A T - 31- 3 ^ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic microminiature envelope w ith source and substrate interconnected, intended for u.h.f. and v.h.f. applications, such as u.h.f./v.h.f. television tuners and
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BF994
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Untitled
Abstract: No abstract text available
Text: BF 1009 SIEMENS Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 9 V • Integrated stabilized bias network X AGC o- X Drain G21 HF o- 1 - G1 Input 11 GND HF Output + DC EHA07215
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EHA07215
Q62702-F1613
OT-143
200MHz
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BF996
Abstract: marking BS marking BS mosfet
Text: - v . - - '_-—_ N AMER PHILIP S/ DIS CRETE übE D WÊ :_ ^53^31 l i _i _ 0D13D14 T BF996 A ' T -s i-a .s -' SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic microminiature envelope, with source and substrate
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0D13D14
BF996
200MHz
BF996
marking BS
marking BS mosfet
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U78 IC
Abstract: mesfet fet
Text: GENERAL PURPOSE DUAL-GATE GaAs MESFET FEATURES NE25339 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE V g s = 1 V, I ds = 10 mA, f = 900 MHz S U IT A B L E F O R U S E A S R F A M P L IF IE R A N D M IX E R IN U H F A P P L IC A T IO N S L O W C R S S : 0.02 pF TYP
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NE25339
NE253
OT-143)
NE25339
NE25339-T1
NE25339U76
NE25339T1U76
NE25339U77
NE25339T1U77
U78 IC
mesfet fet
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BF1100R
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Dual-gate MOS-FETs FEATURES • Specially designed for use at 9 to 12 V supply voltage BF1100; BF1100R and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.
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BF1100;
BF1100R
OT143R.
BF1100R
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11744 502
Abstract: No abstract text available
Text: SIEMENS BFP 280 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • fT = 7,5GHz F = 1.5dB at 900MHz REs Q62702-F1378 1 =C 2=E 3=B Package
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900MHz
Q62702-F1378
OT-143
11744 502
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BFP29
Abstract: BFP35A BFQ77 BFP17 BFQ57 BFQ58 BFT65 BFQ 58 SOT-89 smd marking CF BFT99A
Text: SIEMENS AKTIENGESELLSCHAF 03E I Bi ê23SbO S QDlSb7M T M S IE G • : Silicon Bipolar Transistors M etal C eram ic Packages Max. r atings ^CEO Ic Pto. V mA mW Chara steristic:s at Ta = 25° C F fj f Ic VcE GHz dB mA V GHz N N N 16 16 20 35 30 35 450 450 700
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fi23SbQS
001Sb74
O-117
BFT98B
BFT99A
BFR15A,
BFS55A,
BFP29
BFP35A
BFQ77
BFP17
BFQ57
BFQ58
BFT65
BFQ 58
SOT-89 smd marking CF
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