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    BF1005SR

    Abstract: BF1005 BF1005S BF1005SW
    Text: BF1005S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF1005S. EHA07215 BF1005S OT143 BF1005SR OT143R BF1005SW OT343 Feb-18-2004 BF1005SR BF1005 BF1005S BF1005SW

    BF1005

    Abstract: VPS05178
    Text: BF1005 Silicon N-Channel MOSFET Tetrode 3  For low noise, high gain controlled input stages up to 1GHz 4  Operating voltage 5V  Integrated stabilized bias network Drain AGC HF Input G2 G1 2 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF1005 VPS05178 EHA07215 OT143 Jun-28-2001 200MHz BF1005 VPS05178

    BF1009SR

    Abstract: No abstract text available
    Text: BF1009SR Dual - MOS FET Monolithic Integrated Circuit  For low noise, high gain controlled input stages up to 1GHz  Operating voltage 9V  Integrated stabilized bias network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF1009SR EHA07215 OT143R Dec-04-2002 200MHz BF1009SR

    BF1009SW

    Abstract: No abstract text available
    Text: BF1009S. Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF1009S. EHA07215 BF1009S BF1009SR OT143 OT143R BF1009S, BF1009SR BF1009W BF1009SW

    VPS05178

    Abstract: No abstract text available
    Text: BF 1009S Silicon N-Channel MOSFET Tetrode 3  For low noise, high gain controlled input stages up to 1GHz 4  Operating voltage 9V  Integrated bias network 2 Drain AGC HF Input G2 G1 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF 1009S VPS05178 EHA07215 OT-143 May-05-1999 200MHz VPS05178

    a 1009

    Abstract: VPS05178
    Text: BF 1009 Silicon N-Channel MOSFET Tetrode 3  For low noise, high gain controlled input stages up to 1GHz 4  Operating voltage 9 V  Integrated stabilized bias network Drain AGC HF Input G2 G1 2 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF VPS05178 EHA07215 OT-143 May-05-1999 200MHz a 1009 VPS05178

    1012S

    Abstract: VPS05178
    Text: BF 1012S Silicon N-Channel MOSFET Tetrode 3  For low noise, high gain controlled input stages up to 1GHz 4  Operating voltage 12V  Integrated stabilized bias network Drain AGC HF Input G2 G1 2 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF 1012S VPS05178 EHA07215 OT-143 Dec-06-1999 200MHz 1012S VPS05178

    BF1005S

    Abstract: VPS05178
    Text: BF1005S Silicon N-Channel MOSFET Tetrode 3  For low noise, high gain controlled input stages up to 1GHz 4  Operating voltage 5V  Integrated stabilized bias network Drain AGC HF Input G2 G1 2 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF1005S VPS05178 EHA07215 OT143 Jun-28-2001 200MHz BF1005S VPS05178

    BF1005SR

    Abstract: marking NZs
    Text: BF1005SR Dual - MOS FET Monolithic Integrated Circuit  For low noise, high gain controlled input stages up to 1GHz  Operating voltage 5V  Integrated stabilized bias network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF1005SR EHA07215 OT143R Oct-19-2001 200MHz BF1005SR marking NZs

    BF1005SR

    Abstract: No abstract text available
    Text: BF1005S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF1005S. EHA07215 BF1005S BF1005SR BF1005SW OT143 OT143R OT343 BF1005S,

    BF1009SW

    Abstract: BF1009S BF1009SR BF1009W
    Text: BF1009S. Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF1009S. EHA07215 BF1009S OT143 BF1009SR OT143R Feb-18-2004 200MHz BF1009SW BF1009S BF1009SR BF1009W

    VPS05178

    Abstract: No abstract text available
    Text: BF 1005 Silicon N-Channel MOSFET Tetrode 3  For low noise, high gain controlled input stages up to 1GHz 4  Operating voltage 5V  Integrated stabilized bias network Drain AGC HF Input G2 G1 2 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF VPS05178 EHA07215 OT-143 May-05-1999 200MHz VPS05178

    BF1009S

    Abstract: VPS05178
    Text: BF1009S Silicon N-Channel MOSFET Tetrode 3  For low noise, high gain controlled input stages up to 1GHz 4  Operating voltage 9V  Integrated bias network 2 Drain AGC HF Input G2 G1 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF1009S VPS05178 EHA07215 OT143 Jun-28-2001 200MHz BF1009S VPS05178

    BF1009SW

    Abstract: marking g1s
    Text: BF1009SW Silicon N-Channel MOSFET Tetrode 3  For low noise, high gain controlled 4 input stages up to 1GHz  Operating voltage 9V  Integrated bias network Drain AGC HF Input G2 G1 2 HF Output + DC GND 1 VPS05605 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF1009SW VPS05605 EHA07215 OT343 Jun-28-2001 200MHz BF1009SW marking g1s

    1009SW

    Abstract: No abstract text available
    Text: BF 1009SW Silicon N-Channel MOSFET Tetrode 3  For low noise, high gain controlled 4 input stages up to 1GHz  Operating voltage 9V  Integrated bias network Drain AGC HF Input G2 G1 2 HF Output + DC GND 1 VPS05605 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF 1009SW VPS05605 EHA07215 OT-343 May-05-1999 200MHz 1009SW

    VPS05178

    Abstract: No abstract text available
    Text: BF 1005S Silicon N-Channel MOSFET Tetrode 3  For low noise, high gain controlled input stages up to 1GHz 4  Operating voltage 5V  Integrated stabilized bias network Drain AGC HF Input G2 G1 2 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF 1005S VPS05178 EHA07215 OT-143 May-05-1999 200MHz VPS05178

    Untitled

    Abstract: No abstract text available
    Text: BF1005S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF1005S. EHA07215 BF1005S BF1005SR BF1005SW OT143 OT143R OT343 BF1005S,

    BF1009SW

    Abstract: BF1009 marking code g2s
    Text: BF1009S. Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF1009S. EHA07215 BF1009S BF1009SR OT143 OT143R BF1009S, BF1009SR BF1009W BF1009SW BF1009 marking code g2s

    bf1012s

    Abstract: BF1012 VPS05178
    Text: BF1012S Silicon N-Channel MOSFET Tetrode 3  For low noise, high gain controlled input stages up to 1GHz 4  Operating voltage 12V  Integrated stabilized bias network Drain AGC HF Input G2 G1 2 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF1012S VPS05178 EHA07215 OT143 Jun-28-2001 200MHz bf1012s BF1012 VPS05178

    a31s

    Abstract: No abstract text available
    Text: BF 1012 SIEMENS Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 12V • Integrated stabilized bias network AGC O - i X - HF o Input D rain G21 HF Output + DC G1 1 GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF EHA07215 Q62702-F1487 OT-143 200MHz a31s

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BF 1012 Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 12V • Integrated stabilized bias network , D rain AG C o - X . HF oInput G2 I H F Output + DC G1 1 GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF EHA07215 62702-F1487 200MHz

    Untitled

    Abstract: No abstract text available
    Text: BF 1009 SIEMENS Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 9 V • Integrated stabilized bias network X AGC o- X Drain G21 HF o- 1 - G1 Input 11 GND HF Output + DC EHA07215


    OCR Scan     		PDF EHA07215 Q62702-F1613 OT-143 200MHz

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BF 1005 Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network X AGC o HF o Input Drain G2 ! HF Output + DC G1 1 GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF EHA07215 T-143 62702-F1498

    siemens MOSFET 14

    Abstract: Marking G1s
    Text: SIEMENS BF1009S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias network Z AGC o - X - HF o Input Droin G21 HF O utput + DC G1 1 GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF BF1009S EHA07215 1009S Q62702-F1628 OT-143 200MHz 200MHz siemens MOSFET 14 Marking G1s