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    OVERLAY TRANSISTOR Search Results

    OVERLAY TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    OVERLAY TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2n4427

    Abstract: 2N3866
    Text: tPiotLati, Gnu. <J\fuxr TELEPHONE: 973 376-2922 20 STERN AVE. SPHINQRELD, NEW JERSEY 07081 U S.A. (212)227-6005 FAX: (973) 376-6960 Silicon planar epitaxial overlay transistors 2N3866; 2N4427 APPLICATIONS DESCRIPTION NPN overlay transistors in TO-39 metal packages with the


    Original     		PDF 2N3866; 2N4427 O-39/1 2N3866 2n4427 2N3866

    SDL-4301

    Abstract: 4.43mhz tdk MC1378 MC1378P Toko 166nnf
    Text: MC1378 Color Television Composite Video Overlay Synchronizer The MC1378 is a bipolar composite video overlay encoder and microcomputer synchronizer. The MC1378 contains the complete encoder function of the MC1377, i.e., quadrature color modulators, RGB matrix, and


    Original     		PDF MC1378 MC1377, SDL-4301 4.43mhz tdk MC1378P Toko 166nnf

    Untitled

    Abstract: No abstract text available
    Text: TELEPHONE 973 376-2922 (212)227-6005 FAX: (973) 379-8980 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA 2N3924 2N3926 2N3927 SILICON PLANAR EPITAXIAL OVERLAY TRANSISTORS The 2N3924 is an n-p-n overlay transistor in a TO-39 metal envelope with the collector connected to the case.


    Original     		PDF 2N3924 2N3926 2N3927 2N3924 The2N3926 2N3927 2N392B

    AM1517-025

    Abstract: S042
    Text: AM1517-025 RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED ∞ :1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE


    Original     		PDF AM1517-025 AM1517-025 S042

    AM82223-010

    Abstract: S042
    Text: AM82223-010 RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED ∞ :1 VSWR CAPABILITY AT RATED CONDITIONS LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE


    Original     		PDF AM82223-010 AM82223-010 S042

    8w RF POWER TRANSISTOR NPN

    Abstract: gold capacitor RF POWER S-band TRANSISTOR 82731 thomson capacitor AM82731-003 S042 82731003 radar amplifier s-band 2.7 2.9 GHZ
    Text: AM82731-003 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 10:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT IMPEDANCE MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE


    Original     		PDF AM82731-003 AM82731-003 8w RF POWER TRANSISTOR NPN gold capacitor RF POWER S-band TRANSISTOR 82731 thomson capacitor S042 82731003 radar amplifier s-band 2.7 2.9 GHZ

    AM80912-030

    Abstract: No abstract text available
    Text: AM80912-030 RF & MICROWAVE TRANSISTORS SPECIALITY AVIONICS/JTIDS APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 15:1 VSWR CAPABILITY LOW RF THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE


    Original     		PDF AM80912-030 AM80912-030

    AM80912-030

    Abstract: transistor speciality 50W power amplifier
    Text: AM80912-030 RF & MICROWAVE TRANSISTORS SPECIALITY AVIONICS/JTIDS APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 15:1 VSWR CAPABILITY LOW RF THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE


    Original     		PDF AM80912-030 AM80912-030 transistor speciality 50W power amplifier

    AM83135-050

    Abstract: No abstract text available
    Text: AM83135-050 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGEDIZED VSWR 3:1 @ 1dB OVERDRIVE LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE


    Original     		PDF AM83135-050 AM83135-050

    2n3866

    Abstract: 2n4427 2N3866 application note 2N3866 class-a 2n3866 philips RF 2N3866 2N3866 metal data 2n3866 2N3866 application Transistor 2n4427
    Text: DISCRETE SEMICONDUCTORS DATA SHEET 2N3866; 2N4427 Silicon planar epitaxial overlay transistors Product specification Supersedes data of August 1986 File under Discrete Semiconductors, SC08a 1995 Oct 27 Philips Semiconductors Product specification Silicon planar epitaxial


    Original     		PDF 2N3866; 2N4427 SC08a O-39/1 2n3866 2n4427 2N3866 application note 2N3866 class-a 2n3866 philips RF 2N3866 2N3866 metal data 2n3866 2N3866 application Transistor 2n4427

    MSC81402

    Abstract: S010
    Text: MSC81402 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIERS APPLICATIONS . . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION HIGH GAIN & COLLECTOR EFFICIENCY RUGGED OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 2.0 W MIN. WITH 10.0 dB GAIN


    Original     		PDF MSC81402 MSC81402 S010

    AM82731-003

    Abstract: S042
    Text: AM82731-003 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 10:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT IMPEDANCE MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE


    Original     		PDF AM82731-003 AM82731-003 S042

    ic 7475

    Abstract: Electronic ballast 40W IC 7475 application 40w electronic ballast 7475 pin out sheet ic 7475 data sheet SD8250 STAN250A
    Text: SD8250 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY @ 1.75 dB RF OVERDRIVE LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE


    Original     		PDF SD8250 STAN250A SD8250 ic 7475 Electronic ballast 40W IC 7475 application 40w electronic ballast 7475 pin out sheet ic 7475 data sheet STAN250A

    SD5000

    Abstract: M122 S10A015
    Text: SD5000 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS . . . . PRELIMINARY DATA GOLD METALLIZATION EMITTER SITE BALLASTING INTERNAL INPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC PACKAGE COMMON EMITTER CONFIGURATION POUT = 1.5 W MIN. WITH 9.5 dB GAIN


    Original     		PDF SD5000 S10A015 SD5000 M122 S10A015

    2n3375

    Abstract: 2n3375 transistor 2N3553
    Text: b'lE ]> • bbSB'lBl DOETTbb 3Tb 2N3375 2N3553 2N3632 IAPX A N AMER PHILIPS/DISCRETE SILICON EPITAXIAL PLANAR OVERLAY TRANSISTORS The 2N3553 is an n-p-n overlay transistor in a TO-39 metal envelope with the collector connected to the case. The2N3375 and the 2N 3632 are n-p-n overlay transistors in TO-60 metal envelopes with the electrodes


    OCR Scan     		PDF 2N3375 2N3553 2N3632 2N3553 The2N3375 2N3375 2N3632 2n3375 transistor

    2N3553

    Abstract: 2N3375 2N3632 ic 2n35 data inductor 4312 020 36640 4312 020 36640 ic 2n35 Transistor 2n3375 2N35 2n3375 transistor
    Text: b'îE D • bbS3T31 □DE‘ï7bb 3Tb BiAPX 2N3375 2N3553 2N3632 A SILICON EPITAXIAL PLANAR OVERLAY TRANSISTORS The 2N3553 is an n-p-n overlay transistor in a TO-39 metal envelope with the collector connected to the case. The2N3375 and the 2N 3632 are n-p-n overlay transistors in T 0 -6 0 metal envelopes with the electrodes


    OCR Scan     		PDF bbS3T31 2N3375 2N3553 2N3632 2N3553 2N3375 2N3632 T0-60 ic 2n35 data inductor 4312 020 36640 4312 020 36640 ic 2n35 Transistor 2n3375 2N35 2n3375 transistor

    2N3927

    Abstract: 2N3926 2N3924 2N3924h 7z08 4312 020 36640 philips 1969 transistor 2N3 400Ic philips 1968
    Text: MIE D m 711Gfl2b 002Ö057 1 2N3924 2N3926 2N3927 [PHIN PHILIPS INTERNATIONAL r - 3 3 - O SILICON PLANAR EPITAXIAL OVERLAY TRANSISTORS The 2N3924 is an n-p-n overlay transistor in aTO-39 metal envelope with the collector connected to the case. The 2N3926 and the 2N3927 are n-p-n overlay transistors in T0-60 metal envelopes with the emitter


    OCR Scan     		PDF Q02flGSfl 2N3924 2N3926 2N3927 T-33-0? 2N3924 2N3926 2N3927 T0-60 2N3924h 7z08 4312 020 36640 philips 1969 transistor 2N3 400Ic philips 1968

    JRC2244

    Abstract: "rf modulator" LM1889 A3126 LM1889 video display processor
    Text: Philips Semiconductors Add Text Overlay to Any Video Display C IR C U IT C E L L A R [ l i [ N j \ K | , THE COMPUTERl APPLICATIONS JOURNAL October/Novem ber 1992 274 Philips Semiconductors Add Text Overlay to Any Video Display Add Text Overlay to Any Video


    OCR Scan     		PDF 87CQ54 87C054 87C054 80C51 JRC2244 "rf modulator" LM1889 A3126 LM1889 video display processor

    2N3553

    Abstract: 2N3375 WE VQE 23 F 2n3632 transistor 2n3553 2N3553 NPN philips 1968 philips 1969 philips TRANSISTORS 1968 WE VQE 11 E
    Text: 41E D • IPHIN 711Qö2b 00EÖ033 1 2N3375 2N3553 2N3632 PHILIPS INTERNATIONAL T - 3 3 - 0 < ? SILICON EPITAXIAL PLANAR OVERLAY TRANSISTORS The 2N3553 is an n-p-n overlay transistor in a TO-39 metai envelope with the col lector connected to the case. The 2N3375 and the 2N3632 are n-p-n overlay transistors In T 0 -6 0 metal envelopes with the electrodes


    OCR Scan     		PDF 2n3375 2n3553 2n3632 2N3632 T0-60 WE VQE 23 F transistor 2n3553 2N3553 NPN philips 1968 philips 1969 philips TRANSISTORS 1968 WE VQE 11 E

    2N3927

    Abstract: No abstract text available
    Text: bTE D • 2N3924 2N3926 2N3927 bb53*131 003*1766 Tb7 « A P X N AMER PHILIPS/DISCRETE SILICON PLANAR EPITAXIAL OVERLAY TRANSISTORS The 2N 3 9 24 is an n-p-n overlay transistor in aT O -39 metal envelope with the collector connected to the case. The 2 N 3 9 26 and the 2N 3 9 27 are n-p-n overlay transistors in TO -60 metal envelopes with the emitter


    OCR Scan     		PDF 2N3924 2N3926 2N3927 bb53T31 7Z08I91 7Z08189 7Z08185 2N3927

    2n4427

    Abstract: 2N3866 Transistor 2N3866 2N3866 metal 2N3866 RF CLASS A Philips 4312 020 RF 2N3866 2N3866 class-a 2n3866 philips 4312 020 36640
    Text: b5E D 711Dfl2b 00L3b7fl CHG • PHIN 2N3866 2N4427 PHILIPS INTERNATIONAL SILICON PLANAR EPITAXIAL OVERLAY TRANSISTORS N-P-N overlay transistors in TO-39 metal envelopes with the collector connected to the case. The devices are primarily intended for class-A, B or C amplifiers, frequency multiplier and oscillator circuits.


    OCR Scan     		PDF 711Dfl2b 00L3b7fl 2N3866 2N4427 2N3866 711002b 00b3bà 2n4427 Transistor 2N3866 2N3866 metal 2N3866 RF CLASS A Philips 4312 020 RF 2N3866 2N3866 class-a 2n3866 philips 4312 020 36640

    t 3866 power transistor

    Abstract: transistor 3866 s t 3866 transistor transistor 3866
    Text: • bb53131 0031761 b03 H A P X N AflER PHILIPS/DISCRETE 2N3866 2N4427 blE D SILICON PLANAR EPITAXIAL OVERLAY TRANSISTORS N-P-N overlay transistors in TO-39 metal envelopes with the collector connected to the case. The devices are prim arily intended fo r class-A, B or C amplifiers, frequency m ultiplier and oscillator circuits.


    OCR Scan     		PDF bb53131 2N3866 2N4427 t 3866 power transistor transistor 3866 s t 3866 transistor transistor 3866

    JRC2244

    Abstract: philips lcd tv inverter schematic IC 75176 circuit details LM1889 schematic LCD inverter lm339 signetics rf Receiver Circuits color pal transistor pattern generator schematic lm1889 circuit diagram 80C51 87C054
    Text: P h ilip s S e m ic o n d u c to r s Add Text Overlay to Any Video Display CIRCUIT CELLAR □QOS , THE COMPUTER APPLICATIONS JOURNAL MEASUREMENT & CONTROL SPECIAL SECTION: Embedded Graphics & Video Time Domain Reflectometer Overlay Text on Video October/November, 1992 — Issue #29


    OCR Scan     		PDF 80C51-Based 87C054 JRC2244 philips lcd tv inverter schematic IC 75176 circuit details LM1889 schematic LCD inverter lm339 signetics rf Receiver Circuits color pal transistor pattern generator schematic lm1889 circuit diagram 80C51

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON ittJÈTMDigl MSC81035MP RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . REFRACTORY/GOLD METALLIZATION . EMITTER SITE BALLASTED . oo:1 VSWR CAPABILITY i LOW THERMAL RESISTANCE . INPUT MATCHING . OVERLAY GEOMETRY . METAL/CERAMIC HERMETIC PACKAGE


    OCR Scan     		PDF MSC81035MP 81035MP MSC81035MP MSC1035MP.