24-Pin Plastic DIP
Abstract: P4C422
Text: P4C422 P4C422 ULTRA HIGH SPEED 256 x 4 STATIC CMOS RAM FEATURES Separate I/O High Speed Equal Access and Cycle Times – 10/12/15/20/25/35 ns (Commercial) – 15/20/25 /35 ns (Military) Fully TTL Compatible Inputs and Outputs Resistant to single event upset and latchup
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P4C422
22-pin
24-pin
P4C422
024-bit
and4C422
-10PC
24-Pin Plastic DIP
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MB3789A
Abstract: MB3789APFV-E1 FPT-16P-M05 VT100 marking code fujitsu MOSFET
Text: FUJITSU MICROELECTRONICS DATA SHEET DS04-27268-1E ASSP for Power Management Applications BIPOLAR Switching Regulator Controller Supporting External Synchronization MB3789A • DESCRIPTION The MB3789A is a PWM (pulse width modulation) switching regulator controller supporting an external sync
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DS04-27268-1E
MB3789A
MB3789A
MB3789APFV-E1
FPT-16P-M05
VT100
marking code fujitsu MOSFET
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CAP 100nF 50V 0603 Z5U
Abstract: MLCC CRACK 100nf electrolytic Capacitor 0201 MLCC 10nF 100nF uwa y5v chang capacitor 10uF 50v capacitor 1nf 500v 1812 x7r 100nF MLCC 1nF CAPACITOR 250v ac smd y class H63A
Text: MULTILAYER CERAMIC CHIP CAPACITOR UWA UWA Corporate 5P Philosophies ★Product:Producing best, innovative products to our worldwide customers ★Price:Providing competitive price to our worldwide customers MANAGEMENT STRATEGY ★Placing:Distributing best products
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LANE165,
CAP 100nF 50V 0603 Z5U
MLCC CRACK
100nf electrolytic Capacitor 0201
MLCC 10nF 100nF
uwa y5v
chang capacitor 10uF 50v
capacitor 1nf 500v 1812 x7r
100nF MLCC
1nF CAPACITOR 250v ac smd y class
H63A
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Untitled
Abstract: No abstract text available
Text: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion
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RCA527
Abstract: mthole1 SEL315 rca323 TP121 RCA628 OCX1601 FM020806A RCA426 36B-6
Text: OCX1601 Starter Kit User’s Guide Revision 1.0 February 2003 Revision History Revision 1.0, February 10th, 2003—Initial Release Copyright 2003 Fairchild Semiconductor Corporation Fairchild does not assume any responsibility for use of any circuitry described, no circuit patent licenses are
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OCX1601
2003--Initial
TP111
TP112
TP107
TP113
TP124
TP123
TP114
TP115
RCA527
mthole1
SEL315
rca323
TP121
RCA628
FM020806A
RCA426
36B-6
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t7805ct
Abstract: T7805CT fixed voltage regulator T7805 a1024 transistor 7805 smd ua723 100n J63 TL431 SMD 595D smd diode K2 3N
Text: APPLICATION NOTE TDA8766G EVALUATION BOARD DOCUMENTATION AN96012 Philips Semiconductors TDA8766G Evaluation board documentation Application Note AN96012 APPLICATION NOTE TDA8766G EVALUATION BOARD DOCUMENTATION Author : Stéphane DESPROGES Application Laboratory - Paris
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TDA8766G
AN96012
TDA8766G
t7805ct
T7805CT fixed voltage regulator
T7805
a1024 transistor
7805 smd
ua723
100n J63
TL431 SMD
595D
smd diode K2 3N
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TF1204
Abstract: MG50G2cl3 toshiba MG50G2CL3
Text: SOLID STATE GTR DRIVER MODULE TF1204 GTR DRIVER TOSHIBA TF1204 is the GTR driver designed for use with TOSHIBA Giant Transistor Module and it includes the optical isolator and GTR driver cirucit. Using this driver, you can design high reliability and compact system.
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TF1204
TF1204
2000Vr
MG50G2CL3
MG50G2cl3 toshiba
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64x32
Abstract: SRAM 1GHz
Text: * RAM INTENSIVE SYSTEM ELEMENT RISE SBWCONDUCTOR7 ADVANCE INFORMATION SY8BP4R2 DESCRIPTION FEATURES 3ns on-board SRAM; 8,192 bits total — alpha particle immune Highest density logic via unique 6-transistor cell + greatest functionality per unit area
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Untitled
Abstract: No abstract text available
Text: * R A M IN T E N S IV E S Y N E R G Y SEMICONDUCTOR s y s te m e le m e n t R IS E FEATURES s y 9b p 6R4 DESCRIPTION 3ns on-board SRAM; 24K bits total — alpha particle immune Highest density logic via unique 6-transistor cell + greatest functionality per unit area
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10D13
D0DD532
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TLP 527
Abstract: TLP180 4x20 WV-120 2SA30 b9 545 02 082 00 3sx40 30X30 4X25 idtos
Text: LARGE ALUMINUM ELECTROLYTIC CAPACITORS Snap-in Terminal Type, Standard Series Standard snap-in terminal type Extended Voltage range of 6.3-500V For 500WV products, apply only FL series, high ripple use Including height 20mm products, low profile sized (Voltage range of 160-450V)
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500WV
60-450V)
WV1200V
120Hz.
120Hz,
1000/f:
2200if
TLP 527
TLP180
4x20
WV-120
2SA30
b9 545 02 082 00
3sx40
30X30
4X25
idtos
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Untitled
Abstract: No abstract text available
Text: V54ACT826 V74ACT826 8-BIT BUS INTERFACE FLIP-FLOPS WITH 3-STATE OUTPUTS FEATURES •CMOS Replacement for ALS •High Speed, 6ns Typical / r •TTL Levels, I x / l OH = /48<24mA Commercial (32/24mA Military •Low Input Current, 1^iA Wax •Fully Specified: 5V ± 10% Power Supply, 50pF and 300pF
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V54ACT826
V74ACT826
32/24mA
300pF
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cd40168
Abstract: s443 SQUARE WAVE TO SINE WAVE schematic diagram CD4016B 4016a 4-10-0102 IC CD4016 15-V CD4016
Text: CD4016B Types CMOS Quad Bilateral Switch Term inal Assignment — — F o r T r a n s m is s io n o r M u lt ip le x in g o f A n a lo g o r D ig ita l S ig n a ls S,G ftOUT H CONTROL B CONTROL C — VSS — H ig h - V o lta g e T y p e s 2 0 -V o lt Rating
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CD4016B
20-Volt
RCA-CD4016B
CD4016
14-lead
92CS-35063
cd40168
s443
SQUARE WAVE TO SINE WAVE schematic diagram
4016a
4-10-0102
IC CD4016
15-V
CD4016
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an7316
Abstract: an7317
Text: AN7316 AN7316 Dual Recording and Playback Pre-Amplifier IC for Single/Double Cassette • D e s c rip tio n The AN7316 is a monolithic integrated circuit for radio cassette recorder and built-in only fundamental function o f R ec./playback pre-am p. w ith ALC function in 2channel 16-lead DIL plastic package.
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AN7316
AN7316
16-lead
an7317
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Untitled
Abstract: No abstract text available
Text: L A T T IC E S E M I C O N D U C T O R 47E D Lattice •■■■■■ FEATURES ■ SBôbSq^ 0002120 1 H L A T GAL26CV12/883 High Performance E2CMOS PLD T - < / é - / 9 - 0 7 Generic Array Logic FU N C T IO N A L B L O C K DIAGRAM • HIGH PERFORMANCE E*CMOS* TECHNOLOGY
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GAL26CV12/883
AL26CV12
MIL-STD-883
28-Pin
GAL26CV12-20LD/883
GAL26CV12-20LR/883
GAL26CV12-25LD/883
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Untitled
Abstract: No abstract text available
Text: cP IITSU April 1998 Revision 1.0 data sheet GOB512UV6431 A -(67/84/100/125)Q-S 4MByte (512Kx 64) CMOS Synchronous Graphic Module General Description The GOB512UV6431 (A)-(67/84/100/125)Q-S is a high performance, 4-megabtye synchronous, graphic RAM module organized
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GOB512UV6431
512Kx
GOB512UV6431
144-pin,
B81G83222-
256Kx32
GOB512UV6431A
67Mhz
84Mhz
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Fairchild ZN 1010
Abstract: GENERAL INSTRUMENT west 2500 ic ZN 415 FGE2000
Text: FGE Series ECL Gate Arrays PAIRCHIL.D A Schlum berc T'HO Qr>y 005596 January 1986 Description U/v\A m b The FGE Series of ECL gate arrays are the fastest silicon gate arrays com m ercially available. These advanced ECL gate arrays, ranging from 100 to 2840 equivalent gates, offer
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F100K,
FGE2500)
28ngton
Fairchild ZN 1010
GENERAL INSTRUMENT west 2500
ic ZN 415
FGE2000
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1492/LT1493
Abstract: No abstract text available
Text: rrw m _ LT1492/LT1493 TECHNOLOGY 5MHz, 3V/|lls, Low Pow er Single Supply, D ual a n d Q u a d Precision O p Am ps F€flTUR€S D€SCRIPTIOfl • Gain-Bandwidth Product: 5MHz Typ ■ Slew Rate: 3V/fis Typ ■ Low Supply Current per Amplifier: 0.55mA Max
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LT1492/LT1493
1492/LT1493
36Vtotal,
400kHz
200kHz
10MHz
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1k*4 SRAM
Abstract: SRAM 1GHz synergy system
Text: SYNERGY SEMICONDUCTOR F m 'n F U F N T ELEM ENT K l b b M PRELIMINARY SY15BP10R4 o vct DESCRIPTION FEATURES The SY15BP10R4 RAM-Intensive System Element is a member of Synergy's System Elements family. Fabricated in the ASSET I bipolar process, these highperformance VLSI components offer an unprecedented
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SY15BP10R4
0DG0535
1k*4 SRAM
SRAM 1GHz
synergy system
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TIL78
Abstract: photo transistor til 78 photo transistor til78 sk 110 19 20n 2sc640 transistor 2SC286 2SC287 2SC430 400M PMT222
Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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fab-100Mc;
BVCB0-30V;
Pc-125mW
BVCB0-30V
lc-10mA;
fab-150Mc;
lc-10mA
fab-200Mc;
BVCBO-15V;
TIL78
photo transistor til 78
photo transistor til78
sk 110 19 20n
2sc640 transistor
2SC286
2SC287
2SC430
400M
PMT222
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Untitled
Abstract: No abstract text available
Text: HIGH PERFORMANCE ANALOG INTEGRATED CIRCUITS F eatu res • • • • • • Slew rate— 1500V/,u.s O u tput drive— 100 mA Rise and fall tim es— 2.9 ns In p u t resistance— 1011!! Pow er bandw idth— 100 M H z M IL-STD-883 devices 100% m anufactured in U.S.A.
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ELH9033G/883/8001401ZX
aKl500
5e--14
200mA
200nS
100mA
170nS
ELH0033G/883/8001401ZX
ELH0033
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Untitled
Abstract: No abstract text available
Text: Lattice' | Semiconductor I Corporation ispLSI 8840 In-System Programmable SuperBIG High Density PLD ispEXPERT™ - LOGIC COMPILER AND COMPLETE ISP DEVICE DESIGN SYSTEMS FROM HDL SYNTHESIS THROUGH IN-SYSTEM PROGRAMMING — Superior Quality of Results — Tightly Integrated with Leading CAE Vendor Tools
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Gates/840
20-Macrocell
8840-110LB432
432-Ball
8840-90LB432
8840-60LB432
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TFK 808
Abstract: TFK 893 Sis 968 TFK 939 TFK 812 tfk 1007 tfk 949 rns jp3 AKD4324 AKD4522
Text: Z r- > Z 73 > ¡1P 73 H1 3V 5V GND A K D 4522 □ □ □ □ nfr ¡Sil □ S- > u 9 ^ : o At A ° Sfr SÒ- f £ o S £ s 50 ^ 9+ > r*+ V M a; A \> N> ° s v: = —i. — a w V j £ g o # v £ > ^ o > ^ w w w w w v w \, *. ! p ASAHIKASEI 4 I ^ n r a ^ r l
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AKD4522]
AKD4522
AK4522
AKD4522ii7
AKD4522liAD
AKD4319,
AKD4320,
AKD4321,
AKD4324)
TFK 808
TFK 893
Sis 968
TFK 939
TFK 812
tfk 1007
tfk 949
rns jp3
AKD4324
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Untitled
Abstract: No abstract text available
Text: Lattice' ispLSr and pLSr 1048C | Semiconductor I Corporation High-Density Programmable Logic Features Functional Block Diagram HIGH-DENSITY PROGRAMMABLE LOGIC — 8000 PLD Gates — 96 I/O Pins, 12 Dedicated Inputs, 2 Global Output Enables — 288 Registers
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1048C
1048C-70LQ
128-Pin
ispLS11048C-50LQ
I1048C
-70LQ
I1048C-50LQ
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HY5117404A
Abstract: HY5117404AJ60 HY5117404ASLT60 AMO 0210 1A038 VH77 AHC28 HY5117404 hy5117
Text: “H Y U N D A I HY5117404A Series 4M X 4-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5117404A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5117404A utilizes Hyundai’s CM OS silicon gate process technology as w ell as advanced circuit techniques to provide wide
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HY5117404A
1AD38-10-MAY95
0D45DG
HY5117404AJ
HY5117404ASLJ
HY5117404AT
HY5117404AJ60
HY5117404ASLT60
AMO 0210
1A038
VH77
AHC28
HY5117404
hy5117
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