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    philips BFW30

    Abstract: BFR95 BFP91A BFP96 transistors BFW16A BFE520 BFM520 transistor bfw16a BFQ53 BFQ63
    Text: Philips Semiconductors RF Wideband Transistors Replacement list REPLACED/WITHDRAWN TYPES The following type numbers were included in the previous issue of this data handbook, but are not in the current edition. TYPE NUMBER REASON FOR DELETION BFC540 Development stopped. Replaced by BFC520


    Original     		PDF BFC540 BFC520 BFG67W BFG67 BFG67W/X BFG67/X BFG67W/XR BFG67/XR BFG92AW BFG92A philips BFW30 BFR95 BFP91A BFP96 transistors BFW16A BFE520 BFM520 transistor bfw16a BFQ53 BFQ63

    FET BFW10

    Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
    Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI


    OCR Scan     		PDF BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11

    TRANSISTORS REPLACEMENT

    Abstract: BFM520 BFQ53 BFY90 PHILIPS BFC520 BFE520 BFR95 philips BFW30 bfg67 transistors BFW30
    Text: Philips Semiconductors RF Wideband Transistors Replacement list REPLACED/WITHDRAWN TYPES The following type numbers were included in the previous issue of this data handbook, but are not in the current edition. TYPE NUMBER REASON FOR DELETION BFC540 Development stopped. Replaced by BFC520


    OCR Scan     		PDF BFC540 BFG67W BFG67W/X BFG67W/XR BFG92AW BFG92AW/X BFG92AW/XR BFG93AW BFG93AW/X BFG93AW/XR TRANSISTORS REPLACEMENT BFM520 BFQ53 BFY90 PHILIPS BFC520 BFE520 BFR95 philips BFW30 bfg67 transistors BFW30

    Untitled

    Abstract: No abstract text available
    Text: H Philips S em iconductors lati53T31 00315T5 TQS H A P X ^Productspecification NPN 5 GHz wideband transistor BFQ63 N AUER PHIL IPS/DISCRETE DESCRIPTION bRE D PINNING NPN transistor in a TO-72 metal envelope with insulated electrodes and a shield lead connected to the


    OCR Scan     		PDF lati53T31 00315T5 BFQ63 BFQ32M. MEA302 MBB773

    BFQ32M

    Abstract: of bfq63 BFQ63 transistor 643
    Text: Philips Semiconductors Product specification NPN 5 GHz wideband transistor PHILIPS INTERN A T I O N A L DESCRIPTION BFQ63 SbE D • 711Gô2b G04S4Ô4 SDD ■ PHIN PINNING NPN transistor in a 10-12 metal envelope with insulated electrodes and a shield lead connected to the


    OCR Scan     		PDF BFQ63 711002b BFQ32M. 7110fl2b 0D454fl7 BFQ32M of bfq63 BFQ63 transistor 643

    BFQ63

    Abstract: BFQ32M of bfq63
    Text: Philips Semiconductors bibi.53,:] 3 1 G G B IS T S TGS HAPX Product specification NPN 5 GHz wideband transistor BFQ63 N AMER PHILIPS/DISCRETE DESCRIPTION b'IE D PINNING NPN transistor in a TO-72 métal envelope with insulated electrodes and a shield lead connected to the


    OCR Scan     		PDF bbS3T31 BFQ63 BFQ32M. D0315T8 BFQ63 ls12l2 BFQ32M of bfq63

    Untitled

    Abstract: No abstract text available
    Text: bbSBTBl 0032S14 TSO Philips Semiconductors MB APX Product specification NPN 5 GHz wideband transistor crystal X3A-BFR96 N AMER PHILIPS/DISCRETE DESCRIPTION b^E ]> MECHANICAL DATA NPN crystal used in BFR96S SOT37 , BFQ63 (TO-72) and BFR106 (SOT23). Crystals are supplied as whole


    OCR Scan     		PDF 0032S14 X3A-BFR96 BFR96S BFQ63 BFR106

    BFR96S

    Abstract: transistor bfr96 BFQ63 BFR96 BFR106 X3A-BFR96 35331
    Text: b b S 3 cì31 Q032E14 T50 ^ B A P X Philips S em iconductors Product specification NPN 5 GHz wideband transistor crystal X3A-BFR96 N AMER PHILIPS/DISCRETE DESCRIPTION b^E ]> MECHANICAL DATA NPN crystal used in BFR96S SOT37 , BFQ63 (TO-72) and BFR106 (SOT23). Crystals are supplied as whole


    OCR Scan     		PDF BFR96S BFQ63 BFR106 X3A-BFR96 X3A-BFR96 RV-3-5-52/733 BFR96S transistor bfr96 BFQ63 BFR96 BFR106 35331

    X3A-BFR96

    Abstract: transistor bfr96 BFR96S BFR96 BFQ63 crystal PHILIPS BFR106
    Text: P h ilip s S em icon du ctors T 3 l '^ o NPN 5 GHz wideband transistor crystal PHILIPS INTERNATIONAL Produ ct sp ecification SbE D • X3A-BFR96 IPHIN 711Gß2b OaMblQH 4^2 M E C H A N IC A L DATA D ESCRIPTION Crystal N PN crystal used in BFR 96S SOT37 , BFQ63 (TO-72)


    OCR Scan     		PDF BFR96S BFQ63 BFR106 X3A-BFR96 X3A-BFR96 711Gfi2b URV-3-5-52/733 transistor bfr96 BFR96S BFR96 BFQ63 crystal PHILIPS BFR106

    11.5 - 15.5 GHZ

    Abstract: No abstract text available
    Text: Philips Semiconductors Concise Catalogue 1996 DISCRETE SEMICONDUCTORS Wideband transistors RF & MICROWAVE SEMICONDUCTORS & MODULES SECOND-GENERATION WIDEBAND TRANSISTORS fT up to 6 GHz continued polarity type number BFQ63 BFQ68 BFQ136 BFQ149 BFR92 BFR92A


    OCR Scan     		PDF BFQ63 BFQ68 BFQ136 BFQ149 BFR92 BFR92A BFR92AW BFR93 BFR93A BFR93AW 11.5 - 15.5 GHZ

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


    OCR Scan     		PDF 1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


    OCR Scan     		PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


    OCR Scan     		PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


    OCR Scan     		PDF BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8

    BFQ32M

    Abstract: No abstract text available
    Text: Philips Semiconductors bbBB'lBl 0031541 fi34 M APX Product specification PNP 4 GHz wideband transistor I BFQ32M . N Af1ER DESCRIPTION philips /discrete ERE PINNING PNP transistor in a TO-72 metal envelope with insulated electrodes and a shield lead connected to the


    OCR Scan     		PDF BFQ32M BFQ63. 500MHz 0D31SM3 MBB347 BFQ32M

    BFQ32M

    Abstract: transistor D 587 BFQ63 GHz PNP transistor
    Text: Product specification Philips Sem iconductors PNP 4 GHz wideband transistor PHILIPS INTERNATIONAL ' / 5 bE D • 711062b BFQ32M □□•4 S 4 3 Q 3 3 T ■ P H IN PINNING DESCRIPTION PNP transistor In a TO-72 metal envelope with insulated electrodes and a shield lead connected to the


    OCR Scan     		PDF BFQ32M 711062b 0DHS43Q BFQ63. IS22I 7110flEb 00M5M35 MBB347 BFQ32M transistor D 587 BFQ63 GHz PNP transistor

    BFQ32M

    Abstract: BFQ63 UHF pnp transistor
    Text: bbSB'lBl O G B I S m Philips Semiconductors ô3H M A P X Product specification PNP 4 GHz wideband transistor BFQ32M ^ Af1ER PHILIPS/DISCRETE DESCRIPTION PINNING PNP transistor in a TO-72 metal envelope with insulated electrodes and a shield lead connected to the


    OCR Scan     		PDF QD31Sm BFQ32M BFQ63. bbS3T31 0D31543 BFQ32M UB834S MBB347 BFQ63 UHF pnp transistor

    BFT92A

    Abstract: BFT93A BFG134 bf689 sot37 sot173 BFG34 BFQ52 bfg65 sot143 philips bfw92
    Text: 52 RF/Microwave Devices First Generation RF W ideband Transistors fT to 3.5 GHz metal can fr/ lc Curve Polarity (1) (2) N PN NPN (3) (4) (5) NPN NPN NPN (6) (18) NPN NPN TO-39 surface mount plastic TO-72 TQ-92 BFY90 BF689K BF763 BFW30 SOt-37 ceramic SOT-122E


    OCR Scan     		PDF BFY90 TQ-92 BF689K BF763 SOt-37 BFT24 BFW92 BFW93 OT-122E OT-23 BFT92A BFT93A BFG134 bf689 sot37 sot173 BFG34 BFQ52 bfg65 sot143 philips bfw92

    BFG591 amplifier

    Abstract: SC08a bfr591 sot173x BB544 sot122 sot172 bfg65 sot143 SIEMENS BFP520 macro-X ceramic
    Text: Philips Semiconductors Semiconductors for Telecom systems Selection List General For further information, refer to Data Handbook S C 1 4,1993; "RF Wideband Transistors", except otherwise specified. RF wideband transisto rs March 1993 14 Philips Semiconductors


    OCR Scan     		PDF OT122 OT143 OT223 OT323 BFS17W BFG17A BFG16A BF547W BF747W BFT25 BFG591 amplifier SC08a bfr591 sot173x BB544 sot122 sot172 bfg65 sot143 SIEMENS BFP520 macro-X ceramic