Untitled
Abstract: No abstract text available
Text: TAS3103 Digital Audio Processor With 3D Effects Data Manual February 2004 Digital Audio Solutions SLES038C IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue
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TAS3103
SLES038C
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IRGPC40S
Abstract: No abstract text available
Text: PD - 9.692 IRGPC40S INSULATED GATE BIPOLAR TRANSISTOR Features Standard Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 1.8V
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IRGPC40S
400Hz)
IRGPC40S
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eeprom 2408
Abstract: BUT24
Text: TAS3103 Digital Audio Processor With 3D Effects Data Manual October 2002 Digital Audio Solutions SLES038A IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue
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TAS3103
SLES038A
4073252/E
MO-153
eeprom 2408
BUT24
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BUT24
Abstract: No abstract text available
Text: TAS3103 Digital Audio Processor With 3D Effects Data Manual February 2004 Digital Audio Solutions SLES038C IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue
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TAS3103
SLES038C
BUT24
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IRG4PC50S-P
Abstract: IRG4PC50S IRG4PC50
Text: PD - 91581B IRG4PC50S-P Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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91581B
IRG4PC50S-P
O-247AC
O-247
IRG4PC50S-P
IRG4PC50S
IRG4PC50
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COIL CLAMPING DIODE
Abstract: VB927 VB927FI High voltage ignition coil driver car ignition coil Driver car ignition circuit diagram ICL 2025
Text: VB927 VB927FI HIGH VOLTAGE IGNITION COIL DRIVER POWER IC • ■ ■ ■ NO EXTERNAL COMPONENT REQUIRED INTEGRATED HIGH VOLTAGE CLAMP COIL CURRENT LIMIT INTERNALLY SET HIGH RUGGEDNESS DESCRIPTION The VB927 is a monolithic high voltage integrated circuit made using STM VIPower Technology,
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VB927
VB927FI
VB927
O-247
COIL CLAMPING DIODE
VB927FI
High voltage ignition coil driver
car ignition coil Driver
car ignition circuit diagram
ICL 2025
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f1010e
Abstract: IRFP054N SS2000 DIODE marking le st TO-247AC Package IRF1010N PE10
Text: PD - 9.1382A IRFP054N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.012Ω G ID = 81A S Description Fifth Generation HEXFETs from International Rectifier
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IRFP054N
O-247
f1010e
IRFP054N
SS2000
DIODE marking le st
TO-247AC Package
IRF1010N
PE10
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5d3 diode
Abstract: 6B15 7b12 MACH Programmer transistor 7B12 2D15 PAL 007 A power generator control circuit schematic 1C12 5D10
Text: MACH 5 CPLD Family I MAC ncludes H Adv anc 5A Fam e In form ily atio n Fifth Generation MACH Architecture FEATURES ◆ High logic densities and I/Os for increased logic integration ◆ ◆ ◆ ◆ ◆ ◆ ◆ — 128 to 512 macrocell densities — 68 to 256 I/Os
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switLV-256/160
M5A3-256/160
M5A3-192/120
M5LV-256/68
M5A3-256/68
M5LV-512/256-7AC-10AI.
5d3 diode
6B15
7b12
MACH Programmer
transistor 7B12
2D15
PAL 007 A
power generator control circuit schematic
1C12
5D10
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igbt 500V 15A
Abstract: IRGP430U
Text: PD - 9.780 IRGP430U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve VCES = 500V VCE(sat) ≤ 3.0V
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IRGP430U
igbt 500V 15A
IRGP430U
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N CHANNEL MOSFET 10A 1000V
Abstract: IRGPC20K
Text: PD - 9.1129 IRGPC20K INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast IGBT C • Short circuit rated - 10µs @ 125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz
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IRGPC20K
N CHANNEL MOSFET 10A 1000V
IRGPC20K
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IRFP064N
Abstract: IRFP064N equivalent f1010e irf3205 DRIVER otto IRF3205 equivalent irf3205 mosfet transistor IRF3205 IR 190h IRF3205
Text: PD - 9.1383A IRFP064N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.008Ω G ID = 110A S Description Fifth Generation HEXFETs from International Rectifier
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IRFP064N
O-247
IRFP064N
IRFP064N equivalent
f1010e
irf3205 DRIVER
otto
IRF3205 equivalent
irf3205 mosfet transistor
IRF3205 IR
190h
IRF3205
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IRGPC30S
Abstract: No abstract text available
Text: PD - 9.1146 IRGPC30S INSULATED GATE BIPOLAR TRANSISTOR Features Standard Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 2.2V
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IRGPC30S
400Hz)
IRGPC30S
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diode R 360 BL
Abstract: IRFP048N TO-247AC Package IRFZ48N
Text: PD - 9.1409A IRFP048N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.016Ω G Description ID = 64A S Fifth Generation HEXFETs from International Rectifier
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IRFP048N
O-247
diode R 360 BL
IRFP048N
TO-247AC Package
IRFZ48N
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ic 4040
Abstract: 4040 cmos ci 4040 cmos 4040 stv 4325 O129-O135 PD16707 4040
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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PD16707
PD16707
VDD2-VEE40
PD16707P
PD16707N-xxx
S16411JJ1V0DS00
200/index
PD16707N-xxxTCP
SUMIZAC1003
S16411JJ1V0DS
ic 4040
4040 cmos
ci 4040
cmos 4040
stv 4325
O129-O135
4040
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Untitled
Abstract: No abstract text available
Text: 1 MACH 5 FAMILY MACH 5 Family Fifth Generation MACH Architecture DISTINCTIVE CHARACTERISTICS ◆ ◆ ◆ ◆ ◆ ◆ ◆ Publication# 20446 Amendment/0 Rev: D Issue Date: August 1997 MACH 5 Family ◆ Fifth generation MACH architecture — 100% routable
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16-038-BGD352-1
DT106
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IRF540N
Abstract: IRFP140N
Text: PD - 91343B IRFP140N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.052Ω G ID = 33A S Description Fifth Generation HEXFETs from International Rectifier
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91343B
IRFP140N
O-247
IRF540N
IRFP140N
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w9na60
Abstract: ATT218 H9NA60FI STW9NA60 9na60 STH9NA60FI TRANSISTOR FS 2025
Text: STW9NA60 STH9NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE ST W9NA60 ST H9NA60FI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 600 V 600 V < 0.8 Ω < 0.8 Ω 9.5 A 6.4 A TYPICAL RDS(on) = 0.69 Ω ± 30V GATE TO SOURCE VOLTAGE RATING
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STW9NA60
STH9NA60FI
W9NA60
H9NA60FI
100oC
O-247
ISOWATT218
w9na60
ATT218
H9NA60FI
STW9NA60
9na60
STH9NA60FI
TRANSISTOR FS 2025
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CY37512
Abstract: CY37512V
Text: Back PRELIMINARY CY37512V UltraLogic 3.3V 512-Macrocell ISR™ CPLD — tPD = 15 ns Features • 512 macrocells in 32 logic blocks • 3.3V In-System Reprogrammable™ ISR™ — JTAG-compliant on-board programming — Design changes don’t cause pinout changes
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CY37512V
512-Macrocell
CY37512
CY37512V
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clcc land pattern
Abstract: CY37512VP208-66UMB CY37032VP44-100AI CY37064P44-154YMB CY37256P160-125UMB TO-220AB/clcc land pattern
Text: CYPRESS PRELIMINARY Ultra37000 CPLD Family 5V, 3.3V, ISR™ High-Performance CPLDs General Description Features • In-System Reprogram mable ISR™ CMOS CPLDs — JTAG interface for reconfigurability — Design changes don’t cause pinout changes — Design changes don’t cause timing changes
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Ultra37000TM
Ultra37000
22V10
clcc land pattern
CY37512VP208-66UMB
CY37032VP44-100AI
CY37064P44-154YMB
CY37256P160-125UMB
TO-220AB/clcc land pattern
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IRGPC30K
Abstract: No abstract text available
Text: PD - 9.1075 IRGPC30K INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast IGBT C • Short circuit rated - 10µs @ 125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz
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IRGPC30K
IRGPC30K
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IRGPC20U
Abstract: No abstract text available
Text: PD - 9.1031 IRGPC20U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 3.0V
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IRGPC20U
IRGPC20U
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schematic diagram UPS
Abstract: STY30NA50 DC/AC to DC smps circuit diagram schematic diagram welding device O247
Text: STY30NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STY30NA50 • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.175 Ω 30 A TYPICAL RDS(on) = 0.15 Ω EFFICIENT AND RELIABLE MOUNTING THROUGH CLIP ± 30V GATE TO SOURCE VOLTAGE RATING
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STY30NA50
Max247TM
Max247
O-247,
schematic diagram UPS
STY30NA50
DC/AC to DC smps circuit diagram
schematic diagram welding device
O247
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PDF
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O247
Abstract: O-247 STY60NA20 STY60NA
Text: STY60NA20 N - CHANNEL 200V - 0.030Ω - 60 A - Max247 FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STY60NA20 V DSS R DS on ID 200 V < 0.032 Ω 60 A TYPICAL RDS(on) = 0.030 Ω EFFICIENT AND RELIABLE MOUNTING THROUGH CLIP ± 30V GATE TO SOURCE VOLTAGE RATING
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STY60NA20
Max247
Max247TM
O-247,
O-264.
O247
O-247
STY60NA20
STY60NA
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gck451
Abstract: 2818C AT40K AT40K05AL AT40K10AL AT40K20AL AT40K40AL AT40KAL XC4000 XC5200
Text: Features • Ultra High Performance • • • • • • • • • • – System Speeds to 100 MHz – Array Multipliers > 50 MHz – 10 ns Flexible SRAM – Internal Tri-state Capability in Each Cell FreeRAM – Flexible, Single/Dual Port, Synchronous/Asynchronous 10 ns SRAM
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XC4000,
XC5200
2818C
gck451
AT40K
AT40K05AL
AT40K10AL
AT40K20AL
AT40K40AL
AT40KAL
XC4000
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