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    1C12 Search Results

    1C12 Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    LM4041C12IDBZR Texas Instruments 1.2-V Precision Micropower Shunt Voltage Reference, 0.5% accuracy 3-SOT-23 -40 to 85 Visit Texas Instruments Buy
    LM4041C12ILPR Texas Instruments 1.2-V Precision Micropower Shunt Voltage Reference, 0.5% accuracy 3-TO-92 -40 to 85 Visit Texas Instruments Buy
    LM4041C12QDBZR Texas Instruments 1.2-V Precision Micropower Shunt Voltage Reference, 0.5% accuracy 3-SOT-23 -40 to 125 Visit Texas Instruments Buy
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    1C12 Price and Stock

    TDK Corporation C0402C0G1C120J020BC

    CAP CER 12PF 16V C0G 01005
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    DigiKey C0402C0G1C120J020BC Cut Tape 19,940 1
    • 1 $0.17
    • 10 $0.101
    • 100 $0.17
    • 1000 $0.04602
    • 10000 $0.03759
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    C0402C0G1C120J020BC Digi-Reel 19,940 1
    • 1 $0.17
    • 10 $0.101
    • 100 $0.17
    • 1000 $0.04602
    • 10000 $0.03759
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    NexGen Digital C0402C0G1C120J020BC 15,575
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    Panasonic Electronic Components EEU-FS1C121B

    CAP ALUM 120UF 20% 16V RADIAL TH
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    DigiKey EEU-FS1C121B Cut Tape 13,625 1
    • 1 $0.32
    • 10 $0.203
    • 100 $0.1407
    • 1000 $0.10369
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    EEU-FS1C121B Ammo Pack 10,000 2,000
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    • 10000 $0.08093
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    Signal Transformer Inc F1C1-201210-R10M

    FIXED IND 0.10UH 7.0A 13 MOHM
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    DigiKey F1C1-201210-R10M Cut Tape 2,995 1
    • 1 $0.84
    • 10 $0.654
    • 100 $0.84
    • 1000 $0.39354
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    F1C1-201210-R10M Digi-Reel 2,995 1
    • 1 $0.84
    • 10 $0.654
    • 100 $0.84
    • 1000 $0.39354
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    American ZETTLER Inc AZ576-1C-12DE

    RELAY GEN PURPOSE SPDT 20A 12V
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    DigiKey AZ576-1C-12DE Tube 2,293 1
    • 1 $2.68
    • 10 $2.387
    • 100 $2.15038
    • 1000 $1.89354
    • 10000 $1.74581
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    IBS Electronics AZ576-1C-12DE 1,000
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    New Advantage Corporation AZ576-1C-12DE 1,000 1
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    American ZETTLER Inc AZ983-1C-12DE

    RELAY AUTOMOTIVE SPDT 60A 12V
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    DigiKey AZ983-1C-12DE Tray 1,108 1
    • 1 $3.93
    • 10 $3.506
    • 100 $3.1224
    • 1000 $2.78016
    • 10000 $2.78016
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    RS AZ983-1C-12DE Bulk 1,747 9 Weeks 1
    • 1 $3.97
    • 10 $3.85
    • 100 $3.61
    • 1000 $3.61
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    Master Electronics AZ983-1C-12DE 466
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    • 100 $3.061
    • 1000 $2.712
    • 10000 $2.685
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    Find more 1C12 price and stock on Findchips.com

    1C12 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: TPD-1C12-013 InGaAs PIN photodiode chip FEATURES: • Optimized for monitor application. • Low dark current and low capacitance. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS SYMBOL Responsivity Dark Current Breakdown Voltage Capacitance Fig. 1 R ID VBD C


    Original     		TPD-1C12-013 1300nm 850nm 1300nm 1E-10 1E-11 1E-12 1E-13 500x500 PDF

    1E13

    Abstract: TPD-1C12-011
    Text: TPD-1C12-011 InGaAs PIN photodiode chip FEATURES: • Optimized for fiber optic application. • Low dark current and low capacitance. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS SYMBOL Responsivity Dark Current Breakdown Voltage Capacitance Bandwidth Fig. 1


    Original     		TPD-1C12-011 1300nm 850nm 1300nm 1E-10 1E-11 1E-12 1E-13 250x250 1E13 TPD-1C12-011 PDF

    13005 ET

    Abstract: si08 124j capacitor
    Text: THIRD ANGLE PROJECTION 1 C APACI TANCE jiF I ITEM CODE ECWU 1C124JC9 u 1C154JC9 h 1C184JC9 « 1C224JC9 // 1C274JC9 il 1C334JC9 // 1C394JC9 il 1C474JC9 (124) (154) (184) (224) (274) (334) (394) (474) 0 .12 0 .15 0.18 0.22 0 .2 7 0.33 0.39 0 .4 7 DIMEN W


    OCR Scan     		1C124JC9 1C154JC9 1C184JC9 1C224JC9 1C274JC9 1C334JC9 1C394JC9 1C474JC9 033Omm 40aII. 13005 ET si08 124j capacitor PDF

    Untitled

    Abstract: No abstract text available
    Text: THIRD ANGLE PROJECTION ITEM CODE ECWU 1C124JC9 il 1C154JC9 li 1C184JC9 il 1C224JC9 li 1C274JC9 il 1C334JC9 Il 1C394JC9 Il 1C474JC9 D IM E N S IO N S CAPACITANCE |jF * L L i , Lz T Y P E W H 0 .1 2 (1 2 4 ) 4.810.2 3.3+0.3 1.4+0.2 0.35+0.2 E, s II it 0 .1 5 (1 5 4 )


    OCR Scan     		1C124JC9 1C154JC9 1C184JC9 1C224JC9 1C274JC9 1C334JC9 1C394JC9 1C474JC9 PDF

    1C12

    Abstract: 1300nm TPA photodiode photo diode array InGaAs TPA-1C12 PIN 1300nm
    Text: TPA-1C12 InGaAs PIN photodiode Array FEATURES: • Optimized for fiber optic application. • Low dark current and low capacitance. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS SYMBOL Responsivity Surface reflectivity 2 Responsivity uniformity Dark Current


    Original     		TPA-1C12 1300nm 1300nm 1E-10 1E-11 1E-12 1E-13 250x250 1C12 TPA photodiode photo diode array InGaAs TPA-1C12 PIN 1300nm PDF

    InGaas PIN photodiode chip

    Abstract: TPD-1C12-007 InGaas PIN photodiode, 3mm
    Text: TPD-1C12-007 InGaAs PIN photodiode chip FEATURES: • Monitor optic application. • Low dark current and low capacitance. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS SYMBOL Responsivity Breakdown Voltage Capacitance Fig. 1 MIN R VBD C Typical Dark Current and Forward Current


    Original     		TPD-1C12-007 1300nm 850nm 1E-10 1E-11 47mmx3 InGaas PIN photodiode chip TPD-1C12-007 InGaas PIN photodiode, 3mm PDF

    InGaas PIN photodiode chip

    Abstract: PIN photodiode chip 850nm PIN photodiode chip
    Text: TPD-1C12-006 InGaAs PIN photodiode chip FEATURES: • Monitor optic application. • Low dark current and low capacitance. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS SYMBOL Responsivity Breakdown Voltage Capacitance Fig. 1 R VBD C MIN TYP MAX UNIT TEST CONDITIONS


    Original     		TPD-1C12-006 1300nm 850nm 1300nm 1E-10 1E-11 InGaas PIN photodiode chip PIN photodiode chip 850nm PIN photodiode chip PDF

    Untitled

    Abstract: No abstract text available
    Text: TPD-1C12-000 InGaAs PIN photodiode chip FEATURES: • Optimized for fiber optic application. • Low dark current and low capacitance. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS SYMBOL Responsivity Dark Current Breakdown Voltage Capacitance Bandwidth Fig. 1


    Original     		TPD-1C12-000 1300nm 850nm 1E-10 1E-11 1E-12 1E-13 350x350 PDF

    1C5610

    Abstract: No abstract text available
    Text: t h ì r d 'a n g le PROJECTION I , ITEM .C O D E CAPACITANCE D IM E N S IO N S •* ECHU 1CI01OX5 0.0001 (101) ir 1C1210X5 0.00012 (121) li 1C1510X5 0.00015 (151) n 1C1810X5 0.00018 (181) // IC2210X5 0.00022 (221) il 1C2710X5 0.00027 (271) n 1C33ÎOX5 0.00033 (331)


    OCR Scan     		1CI01OX5 1C1210X5 1C1510X5 1C1810X5 IC2210X5 1C2710X5 TC391( 1C5610X5 1C681( 1C102( 1C5610 PDF

    20D-1C12D0

    Abstract: 20D-1C22D0 20D-1C32D0
    Text: SPECIFICATIONS Model Number TYPE 20D-1C 12D0 Contact Material Rhodium Contact Form 1Form C Parameters Test Conditions Units 20D-1C12D0 20D-1C22D0 20D-1C32D0 Coil Specs Nominal Coil Voltage Max Coil Voltage ± 10% at 20° C VDC 5.0 12.0 24.0 15° C to 35° C


    Original     		20D-1C 20D-1C12D0 20D-1C22D0 20D-1C32D0 106Cyc. 20D-1C12D0 100Hz 20D-1C22D0 20D-1C32D0 PDF

    CD40298

    Abstract: No abstract text available
    Text: E SOLID G 3875081 STATE Gl D e 3ö?SDö1i G E S OL ID STATE 01E 0 D1 3 1c12 Ö 13192 7 1 ¥ £ - 3 3 -¿ > CD4029B Types CMOS Presettable Up/Down Counter Binary or BCD -D ecade


    OCR Scan     		CD4029B 4029B. CD40298 PDF

    Untitled

    Abstract: No abstract text available
    Text: ECWU 1C124JC9 // 1C154JC9 il 1C184JC9 il 1C224JC9 Il 1C274JC9 il 1C334JC9 il 1C394JC9 il 1C474JC9 CD O c CD ITEM CODE CD *— CD THIRD ANGLE PROJECTION DIMENSIONS T Y P E H W L L i , L2 4.8+0.2 3.3+0.3 1.4+0.2 0.35+0.2 Ei il II ii 2.0+0.2 E2 CAPACITANCE ¡¿F


    OCR Scan     		1C124JC9 1C154JC9 1C184JC9 1C224JC9 1C274JC9 1C334JC9 1C394JC9 1C474JC9 40min. PDF

    pin InGaAs chip

    Abstract: pin 1300nm
    Text: TPD-1C12-002 InGaAs PIN photodiode chip FEATURES: • Optimized for fiber optic application. • Low dark current and low capacitance. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS SYMBOL Responsivity Dark Current Breakdown Voltage Capacitance Bandwidth Fig. 1


    Original     		TPD-1C12-002 1300nm 850nm 1300nm 1E-10 1E-11 1E-12 1E-13 250x250 pin InGaAs chip pin 1300nm PDF

    12E1

    Abstract: 20D-1C12E1 20D-1C22E1 20D-1C32E1
    Text: SPECIFICATIONS Model Number TYPE 20D-1C 12E1 Parameters Test Conditions Units 20D-1C12E1 20D-1C22E1 20D-1C32E1 Coil Specs ± 10% at 20° C VDC 5.0 12.0 24.0 15° C to 35° C VDC 5.5 13.2 26.4 15° C to 35° C W 120 600 1800 Coil Resistance VDC-Max 3.6 9.0


    Original     		20D-1C 20D-1C12E1 20D-1C22E1 20D-1C32E1 106Cyc Pin10-16) 20D-1C12E1 20D-1C22E1 100Hz 12E1 20D-1C32E1 PDF

    1C12

    Abstract: No abstract text available
    Text: TPD-1C12 InGaAs PIN photodiode chip FEATURES: • Optimized for fiber optic application. • Low dark current and low capacitance. ELECTRO-OPTICAL CHARACTERISTICS: PARAMETERS SYMBOL Responsivity Forward Current Dark Current Breakdown Voltage Capacitance R


    Original     		TPD-1C12 1300nm 1E-10 1E-11 1E-12 1E-13 1C12 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA ASIC TO S H IB A A M E R IC A ELECTRO NIC C O M P O N E N T S , INC. CMOS ASIC 1C120G SERESGITE /«RAY Toshiba Corporation has introduced a series of gate arrays that use a 1.0-micron CMOS process to reduce gate delays by 35%. Applications include consolidating high-speed circuits into a single package, especially in highperformance systems.


    OCR Scan     		1C120G TC120G MA01803 MAS-0053/6-89 PDF

    20D-1C12N0

    Abstract: 20D-1C22N0 20D-1C32N0
    Text: SPECIFICATIONS Model Number TYPE 20D-1C 12N0 Contact Material Rhodium Contact Form 1Form C Parameters Test Conditions Units 20D-1C12N0 20D-1C22N0 20D-1C32N0 Coil Specs Nominal Coil Voltage Max Coil Voltage ± 10% at 20° C VDC 5.0 12.0 24.0 15° C to 35° C


    Original     		20D-1C 20D-1C12N0 20D-1C22N0 20D-1C32N0 106Cyc. 20D-1C12N0 100Hz 20D-1C22N0 20D-1C32N0 PDF

    ci 28448

    Abstract: No abstract text available
    Text: HYUNDAI ELECTRONICS SIE D • 4b750êfl DDDDbTT b?ñ « H Y N K PRELIMINARY •HYUNDAI SEMICONDUCTOR HY534256A 2' iK 4-ill I ( M( S m m i M 1C1200A-JAN92 DESCRIPTION TheHY534256A is a high speed, low power 262,144X 4 bit CMOS dynamic random access memory. Fabricated with the HYUNDAI


    OCR Scan     		HY534256A 4b75Dflfl 000b7cà M1C1200A-JAN92 PACKAGE-300 400MIL ci 28448 PDF

    mathcad flyback

    Abstract: No abstract text available
    Text: r&TOKO TK75003 POWER-FACTOR-CORRECTION/PWM CONTROLLER FEATURES APPLICATIONS • Power Factor Correction/Line Harmonics Reduction to Meet IEC1000-3-2 Requirements ■ Optimized for Offline Operation ■ Maximum Duty Ratio 88% typ. ■ Frequency Reduction for Improved Over-Current


    OCR Scan     		IEC1000-3-2 TK75003 TK75003 1C-121-TK75003 mathcad flyback PDF

    H683

    Abstract: 1H104 1H822JB5 1h181 1H822 1h153j 1H473J 1C153 1H472JB5 1h104j
    Text: Film Capacitors Chip Type ECH-U B /ECW-U(B) Series Uses simple moldless construction and advanced manufacturing techniques, as well as well-established stacking technology. * Features • • ♦ Small size (minimum size 2.0 x 1.25 mm) High moisture resistance (85 °C, 86 %RH, W. V x 1.0


    OCR Scan     		3000M H683 1H104 1H822JB5 1h181 1H822 1h153j 1H473J 1C153 1H472JB5 1h104j PDF

    S1D13513

    Abstract: 1B10h Epson S1D13513 Graphics Driver icsp1 300eh RF 300eh X78B-A-001-01 ICSP2 CTC 1061
    Text: S1D13513 Display Controller Hardware Functional Specification Document Number: X78B-A-001-01 Status: Revision 1.0 Issue Date: 2007/06/05 SEIKO EPSON CORPORATION 2006-2007. All Rights Reserved. Information in this document is subject to change without notice. You may download and use this document, but only for your own use in


    Original     		S1D13513 X78B-A-001-01 X78B-A-001-01 1B10h Epson S1D13513 Graphics Driver icsp1 300eh RF 300eh ICSP2 CTC 1061 PDF

    Untitled

    Abstract: No abstract text available
    Text: MACH 5 CPLD Family BEYOND PERFORMANCE Fifth G eneration MACH A r c h it e l i. . ^ FEATURES — 128 to 512 m acrocell densities — 68 to 256 l/Os ♦ Wide selection of density and I/O combinations to support most application needs — 6 m acrocell density o ptions


    OCR Scan     		M5A3-256/68 LV-512/256-7AC-10AI. PDF

    MACH5-128/68-7/10/12/15

    Abstract: No abstract text available
    Text: COM’L: -7/10/12/15 PRELIMINARY AMD£I IND: -10/12/15/20 The MACH5-128 MACH5-128/68-7/10/12/15/20 MACH5-128/104-7/10/12/15/20 MACH5-128/120-7/10/12/15/20 Fifth Generation MACH Architecture DISTINCTIVE CHARACTERISTICS • Fifth generation MACH architecture


    OCR Scan     		MACH5-128 MACH5-128/68-7/10/12/15/20 MACH5-128/104-7/10/12/15/20 MACH5-128/120-7/10/12/15/20 16-038-PQR-1 PQR144 MACH5-128/XXX-7/10/12/15 PQR160 160-Pin 16-038-PQR-1 MACH5-128/68-7/10/12/15 PDF

    5d3 diode

    Abstract: 6B15 7b12 MACH Programmer transistor 7B12 2D15 PAL 007 A power generator control circuit schematic 1C12 5D10
    Text: MACH 5 CPLD Family I MAC ncludes H Adv anc 5A Fam e In form ily atio n Fifth Generation MACH Architecture FEATURES ◆ High logic densities and I/Os for increased logic integration ◆ ◆ ◆ ◆ ◆ ◆ ◆ — 128 to 512 macrocell densities — 68 to 256 I/Os


    Original     		switLV-256/160 M5A3-256/160 M5A3-192/120 M5LV-256/68 M5A3-256/68 M5LV-512/256-7AC-10AI. 5d3 diode 6B15 7b12 MACH Programmer transistor 7B12 2D15 PAL 007 A power generator control circuit schematic 1C12 5D10 PDF