Datasheet Archive: BUT24 datasheets

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IDEC Corporation RH2B-UT-24VDC Relay Top Mount Dpdt 10A 24Vdc Rohs Compliant: Yes \|Idec RH2B-UT-24VDC
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BUT24 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
BUT24		Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)		Short Form	PDF

BUT24 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
transistor nd8 Abstract: BT4R ISB28000 bt8c pMOS NAND GATE MUX21L AN720 BUT12 BUT18 BUT24 Text: ISB28000 SERIES HCMOS EMBEDDED ARRAY PRELIMINARY DATA FEATURES Combines Standard Cell features with Sea Of Gates time to market. 0.7 micron triple layer metal HCMOS process featuring self-aligned twin tub N and P wells, low resistance polysilicide gates and thin metal oxide.	Original	ISB28000 transistor nd8 BT4R bt8c pMOS NAND GATE MUX21L AN720 BUT12 BUT18 BUT24	PDF
CB12000 Abstract: cd 4847 bt8c dc to ac inverter schematic CB22000 ld3p FD11S FD3S BUT12 BUT18 Text: CB22000 SERIES HCMOS STANDARD CELL GENERAL DESCRIPTION FEATURES 0.7 micron, double layer metal HCMOS4T process featuring self-aligned twin tub N and P wells, low resistance polysilicide gates and thin metal oxide. 2 - input NAND ND2P delay of 0.30 ns (typ)	Original	CB22000 CB12000 cd 4847 bt8c dc to ac inverter schematic ld3p FD11S FD3S BUT12 BUT18	PDF
Untitled Abstract: No abstract text available Text: M T C - 2 2 0 0 0 C M O S 0 .7 n Standard Cell Family Services CMOS Family Features • Technology: CMOS 0 .7 m icron, double or triple la y e r m etal digital or m ix e d a n a lo g /d ig ita l processes, featu rin g self aligned tw in tub N an d P w ells, polycide or polysilicon	OCR Scan	I08CR 08SCR	PDF

Catalog Datasheet

MFG & Type

Document Tags

PDF

transistor nd8

Abstract: BT4R ISB28000 bt8c pMOS NAND GATE MUX21L AN720 BUT12 BUT18 BUT24
Text: ISB28000 SERIES HCMOS EMBEDDED ARRAY PRELIMINARY DATA FEATURES Combines Standard Cell features with Sea Of Gates time to market. 0.7 micron triple layer metal HCMOS process featuring self-aligned twin tub N and P wells, low resistance polysilicide gates and thin metal oxide.

Original

ISB28000 transistor nd8 BT4R bt8c pMOS NAND GATE MUX21L AN720 BUT12 BUT18 BUT24

PDF

CB12000

Abstract: cd 4847 bt8c dc to ac inverter schematic CB22000 ld3p FD11S FD3S BUT12 BUT18
Text: CB22000 SERIES HCMOS STANDARD CELL GENERAL DESCRIPTION FEATURES 0.7 micron, double layer metal HCMOS4T process featuring self-aligned twin tub N and P wells, low resistance polysilicide gates and thin metal oxide. 2 - input NAND ND2P delay of 0.30 ns (typ)

Original

CB22000 CB12000 cd 4847 bt8c dc to ac inverter schematic ld3p FD11S FD3S BUT12 BUT18

PDF

Untitled

Abstract: No abstract text available
Text: M T C - 2 2 0 0 0 C M O S 0 .7 n Standard Cell Family Services CMOS Family Features • Technology: CMOS 0 .7 m icron, double or triple la y e r m etal digital or m ix e d a n a lo g /d ig ita l processes, featu rin g self aligned tw in tub N an d P w ells, polycide or polysilicon

OCR Scan

I08CR 08SCR

PDF

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