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    NX6306GJ Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NX6306GJ NEC 1310 nm InGaAsP MQW DFB laser diode for 155 Mb/s and 622 Mb/s applications. Original PDF

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    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET LASER DIODE NX6306 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6306 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. This


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    PDF NX6306 NX6306S NX6306G

    NX6306

    Abstract: NX6306GH NX6306GI NX6306GJ NX6306GK NX6306SH NX6306SI LD chip
    Text: PRELIMINARY DATASHEET NEC's 1310 nm InGaAsP MQW DFB NX6306 LASER DIODE IN CAN PACKAGE Series FOR 155 Mb/s AND 622 Mb/s APPLICATIONS FEATURES DESCRIPTION • OPTICAL OUTPUT POWER: PO = 5.0 mW • LOW THRESHOLD CURRENT: ITH = 10 mA @ TC = 25°C • HIGH SPEED:


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    PDF NX6306 NX6306 NX6306G NX6306GH NX6306GI NX6306GJ NX6306GK NX6306GH NX6306GI NX6306GJ NX6306GK NX6306SH NX6306SI LD chip