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    NVD4 Price and Stock

    Rochester Electronics LLC NVD4806NT4G

    N-CHANNEL, MOSFET
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    DigiKey NVD4806NT4G Bulk 38,679 784
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    Rochester Electronics LLC NVD4808NT4G

    NVD4808 - POWER MOSFET 30V 63A 8
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    DigiKey NVD4808NT4G Bulk 24,748 1,461
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    Rochester Electronics LLC NVD4804NT4G

    MOSFET N-CH 30V 14.5A/124A DPAK
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    DigiKey NVD4804NT4G Bulk 12,500 555
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    Rochester Electronics LLC NVD4809NT4G

    MOSFET N-CH 30V 9.6A/58A DPAK-3
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    DigiKey NVD4809NT4G Bulk 11,480 1,066
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    Flip Electronics NVD4806NT4G

    N-CHANNEL 30 V 11.3A (TA), 79A (
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    DigiKey NVD4806NT4G Reel 2,500 2,500
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    NVD4806NT4G Reel 2,500 2,500
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    Find more NVD4 price and stock on Findchips.com

    NVD4 Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Type PDF
    NVD-4 Electronic Devices DIODE FAST RECOVERY RECTIFIER 1200V 0.005A Original PDF
    NVD-4 Electronic Devices Rectifier Diodes and Arrays Scan PDF
    NVD4804NT4G On Semiconductor NTD4804N - Power MOSFET 30V 117A 4 mOhm Single N-Channel DPAK Original PDF
    NVD4804NT4G ON Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 14A DPAK Original PDF
    NVD4804NT4G-VF01 ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 14A DPAK Original PDF
    NVD4805NT4G On Semiconductor NVD4805 - TRANSISTOR POWER, FET, FET General Purpose Power Original PDF
    NVD4806NT4G On Semiconductor NVD4806N - Power MOSFET 30V 76A 6 mOhm Single N-Channel DPAK Original PDF
    NVD4806NT4G-VF01 ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 76A DPAK Original PDF
    NVD4808NT4G On Semiconductor NVD4808 - TRANSISTOR POWER, FET, FET General Purpose Power Original PDF
    NVD4809NHT4G ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 58A DPAK Original PDF
    NVD4809NT4G On Semiconductor NVD4809N - Power MOSFET 30V 58A 9 mOhm Single N-Channel DPAK Original PDF
    NVD4810NT4G On Semiconductor NVD4810 - TRANSISTOR POWER, FET, FET General Purpose Power Original PDF
    NVD4810NT4G-TB01 ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 54A DPAK Original PDF
    NVD4810NT4G-VF01 ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 54A DPAK Original PDF
    NVD4813NHT4G On Semiconductor NVD4813NH - Power MOSFET 30V 40A 13 mOhm Single N-Channel DPAK Original PDF
    NVD4815NT4G On Semiconductor NVD4815N - Power MOSFET 30V 35A 15 mOhm Single N-Channel DPAK Original PDF
    NVD4856NT4G On Semiconductor NVD4856 - TRANSISTOR POWER, FET, FET General Purpose Power Original PDF
    NVD4856NT4G-VF01 ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 25V 89A DPAK Original PDF
    NVD4C05NT4G onsemi MOSFET N-CH 30V DPAK-3 Original PDF
    NVD4C05NT4G onsemi MOSFET N-CH 30V DPAK-3 Original PDF

    NVD4 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: NTD4806N, NVD4806N Power MOSFET 30 V, 76 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4806N


    Original     		PDF NTD4806N, NVD4806N NTD4806N/D

    4813NH

    Abstract: 13nhg 48 13nhg NVD4813NH 48 13nhg mosfet
    Text: NTD4813NH, NVD4813NH Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK Features • • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG AEC−Q101 Qualified and PPAP Capable − NVD4813NH


    Original     		PDF NTD4813NH, NVD4813NH AEC-Q101 NTD4813NH/D 4813NH 13nhg 48 13nhg 48 13nhg mosfet

    PPAP

    Abstract: 4810N
    Text: NTD4810N, NVD4810N Power MOSFET 30 V, 54 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4810N


    Original     		PDF NTD4810N, NVD4810N AEC-Q101 NTD4810N/D PPAP 4810N

    Untitled

    Abstract: No abstract text available
    Text: NTD4810N, NVD4810N Power MOSFET 30 V, 54 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4810N


    Original     		PDF NTD4810N, NVD4810N NTD4810N/D

    4806n

    Abstract: NTD4806NT4G 4806ng 48 06ng 369ad
    Text: NTD4806N, NVD4806N Power MOSFET 30 V, 76 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4806N


    Original     		PDF NTD4806N, NVD4806N AEC-Q101 NTD4806N/D 4806n NTD4806NT4G 4806ng 48 06ng 369ad

    4856ng

    Abstract: NTD4856NT4G
    Text: NTD4856N, NVD4856N Power MOSFET 25 V, 89 A, Single N−Channel, DPAK/IPAK Features • • • • • • Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses


    Original     		PDF NTD4856N, NVD4856N AEC-Q101 NTD4856N/D 4856ng NTD4856NT4G

    56NG mosfet

    Abstract: No abstract text available
    Text: NTD4856N, NVD4856N Power MOSFET 25 V, 89 A, Single N−Channel, DPAK/IPAK Features • • • • • • Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses


    Original     		PDF NTD4856N, NVD4856N NTD4856N/D 56NG mosfet

    Untitled

    Abstract: No abstract text available
    Text: NTD4809N, NVD4809N Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified − NVD4809N These Devices are Pb−Free and are RoHS Compliant


    Original     		PDF NTD4809N, NVD4809N NTD4809N/D

    Untitled

    Abstract: No abstract text available
    Text: NTD4804N, NVD4804N Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified − NVD4804N These Devices are Pb−Free and are RoHS Compliant


    Original     		PDF NTD4804N, NVD4804N NTD4804N/D

    369AA

    Abstract: No abstract text available
    Text: NTD4805N, NVD4805N Power MOSFET 30 V, 88 A, Single N−Channel, DPAK/IPAK Features •     Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4805N


    Original     		PDF NTD4805N, NVD4805N AEC-Q101 NTD4805/D 369AA

    Untitled

    Abstract: No abstract text available
    Text: NTD4809NH, NVD4809NH Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4809NH


    Original     		PDF NTD4809NH, NVD4809NH AEC-Q101 NTD4809NH/D

    Untitled

    Abstract: No abstract text available
    Text: NTD4805N, NVD4805N Power MOSFET 30 V, 88 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4805N


    Original     		PDF NTD4805N, NVD4805N AEC-Q101 NTD4805N/D

    Untitled

    Abstract: No abstract text available
    Text: NTD4856N, NVD4856N Power MOSFET 25 V, 89 A, Single N−Channel, DPAK/IPAK Features • • • • • • Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses


    Original     		PDF NTD4856N, NVD4856N NTD4856N/D

    Untitled

    Abstract: No abstract text available
    Text: NTD4808N, NVD4808N Power MOSFET 30 V, 63 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications Requiring


    Original     		PDF NTD4808N, NVD4808N NTD4808N/D

    Untitled

    Abstract: No abstract text available
    Text: NTD4813NH, NVD4813NH Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK Features • • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG AEC−Q101 Qualified and PPAP Capable − NVD4813NH


    Original     		PDF NTD4813NH, NVD4813NH NTD4813NH/D

    Untitled

    Abstract: No abstract text available
    Text: NTD4805N, NVD4805N Power MOSFET 30 V, 88 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4805N


    Original     		PDF NTD4805N, NVD4805N NTD4805N/D

    Untitled

    Abstract: No abstract text available
    Text: NTD4808N, NVD4808N Power MOSFET 30 V, 63 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications Requiring


    Original     		PDF NTD4808N, NVD4808N NTD4808N/D

    NVD4808N

    Abstract: No abstract text available
    Text: NTD4808N, NVD4808N Power MOSFET 30 V, 63 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications Requiring


    Original     		PDF NTD4808N, NVD4808N AEC-Q101 NTD4808N/D

    Untitled

    Abstract: No abstract text available
    Text: NTD4813NH, NVD4813NH Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK Features • • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG NVD Prefix for Automotive and Other Applications Requiring


    Original     		PDF NTD4813NH, NVD4813NH NTD4813NH/D

    Untitled

    Abstract: No abstract text available
    Text: NTD4809NH, NVD4809NH Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4809NH


    Original     		PDF NTD4809NH, NVD4809NH NTD4809NH/D

    Untitled

    Abstract: No abstract text available
    Text: NTD4805N, NVD4805N Power MOSFET 30 V, 88 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications Requiring


    Original     		PDF NTD4805N, NVD4805N NTD4805N/D

    Untitled

    Abstract: No abstract text available
    Text: NTD4815N, NVD4815N Power MOSFET 30 V, 35 A, Single N−Channel, DPAK/IPAK Features • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications Requiring


    Original     		PDF NTD4815N, NVD4815N NTD4815N/D

    48 04NG

    Abstract: NVD4804N 04NG 369D NTD4804N 4804NG NVD4
    Text: NTD4804N, NVD4804N Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified − NVD4804N These Devices are Pb−Free and are RoHS Compliant


    Original     		PDF NTD4804N, NVD4804N NTD4804N/D 48 04NG NVD4804N 04NG 369D NTD4804N 4804NG NVD4

    4815NG

    Abstract: NTD4815N
    Text: NTD4815N, NVD4815N Power MOSFET 30 V, 35 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4815N


    Original     		PDF NTD4815N, NVD4815N AEC-Q101 NTD4815N/D 4815NG NTD4815N