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Untitled Abstract: No abstract text available Text: NTD4815N Power MOSFET 30 V, 35 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com	Original	PDF	NTD4815N NTD4815N/D
4815ng Abstract: 369D NTD4815N B R 115 Text: NTD4815N Power MOSFET 30 V, 35 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com	Original	PDF	NTD4815N NTD4815N/D 4815ng 369D NTD4815N B R 115
Untitled Abstract: No abstract text available Text: NTD4815N Power MOSFET 30 V, 35 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com Applications	Original	PDF	NTD4815N NTD4815N/D
4815NG Abstract: 369D NTD4815N Text: NTD4815N Power MOSFET 30 V, 35 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com	Original	PDF	NTD4815N NTD4815N/D 4815NG 369D NTD4815N
Untitled Abstract: No abstract text available Text: NTD4815N, NVD4815N Power MOSFET 30 V, 35 A, Single N−Channel, DPAK/IPAK Features • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications Requiring	Original	PDF	NTD4815N, NVD4815N NTD4815N/D
4815NG Abstract: Mosfet 4815n 369D NTD4815N 25VGS NTD4815N-35G Text: NTD4815N Power MOSFET 30 V, 35 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com	Original	PDF	NTD4815N NTD4815N/D 4815NG Mosfet 4815n 369D NTD4815N 25VGS NTD4815N-35G
4815ng Abstract: NTD4815NT4G NTD4815N 369D Text: NTD4815N Power MOSFET 30 V, 35 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com	Original	PDF	NTD4815N NTD4815N/D 4815ng NTD4815NT4G NTD4815N 369D
4815NG Abstract: NTD4815N Text: NTD4815N, NVD4815N Power MOSFET 30 V, 35 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4815N	Original	PDF	NTD4815N, NVD4815N AEC-Q101 NTD4815N/D 4815NG NTD4815N
Untitled Abstract: No abstract text available Text: NTD4815N, NVD4815N Power MOSFET 30 V, 35 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4815N	Original	PDF	NTD4815N, NVD4815N NTD4815N/D