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    70NM Price and Stock

    Pulse Electronics Corporation LP470NMO

    BLACK NMO LOW PROFILE, UNITY, 47
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    DigiKey LP470NMO Bag 10 1
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    Master Electronics LP470NMO 12
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    Sager LP470NMO 1
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    STMicroelectronics STE70NM60

    MOSFET N-CH 600V 70A ISOTOP
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    STMicroelectronics STE70NM60 98 1
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    TME STE70NM60 1
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    Pulse Electronics Corporation LP470NMOW

    ANT WHT LO-PROFILE UTY 470-490
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    Sager LP470NMOW 1
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    STMicroelectronics STE70NM50

    MOSFET N-CH 500V 70A ISOTOP
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    JRH Electronics 370NM036M1408A

    CONN BACKSHELL
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    DigiKey 370NM036M1408A Bulk 1
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    70NM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ODD-525W

    Abstract: Wavelength 450nm ir photodiode wavelength
    Text: SELECTIVE WAVELENGTH PHOTODIODE: 525nm PEAK WAVELENGTH ODD-525W FEATURES • • • • Peak response at 525nm Spectral bandwidth 70nm Low dark current No optical filters used RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS TEST CONDITIONS Active Area


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    PDF 525nm ODD-525W 525nm 450nm 570nm ODD-525W Wavelength 450nm ir photodiode wavelength

    soc toshiba

    Abstract: 90 nm CMOS soc 1044 TC280 B707 cmos logic 90nm 90-nm CMOS standard cell library process technology toshiba transistors selection guide TOSHIBA
    Text: 2003-2 PRODUCT GUIDE BCE0012A 90nm Ldrawn=70nm CMOS ASIC TC300 Family 2003 http://www.semicon.toshiba.co.jp/eng SoC Solution for a Wide Range of UltraHigh-Performance and Ultra-Low-Power Applications TC300 Family Features and Benefits Ultra-High Density and Ultra-Low Power


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    PDF BCE0012A TC300 90-nm 70-nm-drawn F-93561, soc toshiba 90 nm CMOS soc 1044 TC280 B707 cmos logic 90nm 90-nm CMOS standard cell library process technology toshiba transistors selection guide TOSHIBA

    ir photodiode wavelength

    Abstract: IR photodiode ODD-525W 525nm photodiode 110 5-25W Wavelength 450nm
    Text: SELECTIVE WAVELENGTH PHOTODIODE: 525nm PEAK WAVELENGTH ODD-525W FEATURES • • • • Peak response at 525nm Spectral bandwidth 70nm Low dark current No optical filters used RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS TEST CONDITIONS Active Area


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    PDF 525nm ODD-525W 525nm 450nm 570nm ir photodiode wavelength IR photodiode ODD-525W photodiode 110 5-25W Wavelength 450nm

    EN60947-5-2

    Abstract: M18X1 M30X1 LT/SG3527A
    Text: 电感式 接近开关 圆柱形 金属外壳 直流 系列低温型(-40-85℃) 直接附线 6.5/8/12/18/30/45mm直径 A-3 形外壳尺寸 技术参数: △工作电压: △最大波纹: △空载电流: △电压降: △工作温度: △最大温度漂移:


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    PDF 5/8/12/18/30/45mm 12/18/3045mm: 10-30Vdc 5/8/12mm) 30/45mm) EN60947-5-2 IEC68-2-27IEC68-2-6 M12x1 M18X1 M30X1 EN60947-5-2 M18X1 LT/SG3527A

    EN60947-5-2

    Abstract: M18X1 M30X1
    Text: 电感式 接近开关 圆柱形 金属外壳 直流系列高温型(-25-125℃) 直接附线 6.5/8/12/18/30/45mm直径 3/4线直流 技术参数: △工作电压:


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    PDF 12/18/30/45mm: 10-30Vdc 5/8/12mm) 18/30/45mm) EN60947-5-2 IEC68-2-27IEC68-2-6 M12x1 M18X1 M30X1 M45X1 EN60947-5-2 M18X1

    TC58NVG2D4BFT00

    Abstract: TH58NVG3D4BFT00 SSTL-18 TMP86FS49FG H5401 TH58NVG*D TC58DVG14B1FT00 SSTL18 th58nvg TMP86FS49UG
    Text: C O N T E N T S INFORMATION 東芝半導体情報誌アイ 2004年5月号 5 VOLUME 142 四日市工場で最先端の NAND型フラッシュメモリ製造棟の建設を開始 .4 今月の新製品情報 4ギガビットNAND型フラッシュメモリ .2


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    PDF 03-3457-3405FAX. TC58NVG2D4BFT00/TH58NVG3D4BFT00 TC58DVG14B1FT00 TC58NVG2D4BFT00 TH58NVG3D4BFT00 600s/ TC58NVG2D4BFT00 TH58NVG3D4BFT00 SSTL-18 TMP86FS49FG H5401 TH58NVG*D SSTL18 th58nvg TMP86FS49UG

    nir emitter leds with 700 to 900 nm

    Abstract: ODD-660W ansi z136.1 -vcsel photodiode 650nm nep UV led diode 200 nm peak 1W OD-850-30-030 OD-800W ODD-42WB "infrared led" 800 nm 980 nm led nir
    Text: Optoelectronics Data Book Innovators in Optoelectronics TABLE OF CONTENTS Alphanumeric Eye Safety


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    PDF 660nm ODD-660W nir emitter leds with 700 to 900 nm ODD-660W ansi z136.1 -vcsel photodiode 650nm nep UV led diode 200 nm peak 1W OD-850-30-030 OD-800W ODD-42WB "infrared led" 800 nm 980 nm led nir

    sharp 2Y0A21

    Abstract: 2y0a21 2Y0A21 f 05 2Y0A21 f 05 analog GP2Y0A21YK0F 2y0a21f sharp 2Y0A21 f 37 SHARP 2Y0A21 F 05 SHARP GP2Y0A21YK0F infrared distance sensor 2Y0A21 f 01
    Text: GP2Y0A21YK0F GP2Y0A21YK0F Distance Measuring Sensor Unit Measuring distance: 10 to 80 cm Analog output type •Description ■Agency approvals/Compliance GP2Y0A21YK0F is a distance measuring sensor unit, composed of an integrated combination of PSD position sensitive detector , IRED (infrared emitting


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    PDF GP2Y0A21YK0F GP2Y0A21YK0F 2002/95trategic E4-A00201EN sharp 2Y0A21 2y0a21 2Y0A21 f 05 2Y0A21 f 05 analog 2y0a21f sharp 2Y0A21 f 37 SHARP 2Y0A21 F 05 SHARP GP2Y0A21YK0F infrared distance sensor 2Y0A21 f 01

    GP2Y0E02B

    Abstract: No abstract text available
    Text: GP2Y0E02B GP2Y0E02B Distance Measuring Sensor Unit Measuring distance : 4 to 50 cm Digital I 2 C output type •Description ■Agency approvals/Compliance GP2Y0E02B is a distance measuring sensor unit, composed of an integrated combination of CMOS image sensor and IR-LED.


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    PDF GP2Y0E02B GP2Y0E02B 2002/95/EC) OP13004EN

    GP2Y0A41SK0F

    Abstract: No abstract text available
    Text: GP2Y0A41SK0F GP2Y0A41SK0F Distance Measuring Sensor Unit Measuring distance : 4 to 30 cm Analog output type •Description ■Agency approvals/Compliance GP2Y0A41SK0F is a distance measuring sensor unit, composed of an integrated combination of PSD position sensitive detector , IR-LED (infrared


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    PDF GP2Y0A41SK0F GP2Y0A41SK0F 2002/95/EC) OP13008EN

    Untitled

    Abstract: No abstract text available
    Text: GP2Y0D810Z0F GP2Y0D810Z0F Distance Measuring Sensor Unit Digital output 100 mm type •Description ■Agency approvals/Compliance GP2Y0D810Z0F is distance measuring sensor unit, composed of an integrated combination of PSD (position sensitive detector) , IRED (infrared emitting


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    PDF GP2Y0D810Z0F GP2Y0D810Z0F 2002/95/ECrategic E4-A01101EN

    GP2Y0D805Z0F

    Abstract: sharp cmos SENSOR water SENSOR WASHING reflective photo sensor GP2Y0 carbon black 2025 KODAK Gray Cards U4001 B U4001 gp2y0d805
    Text: GP2Y0D805Z0F GP2Y0D805Z0F Distance Measuring Sensor Unit Digital output 50 mm type •Description ■Agency approvals/Compliance GP2Y0D805Z0F is a distance measuring sensor unit, composed of an integrated combination of PD (photo diode) , IRED (infrared emitting diode) and


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    PDF GP2Y0D805Z0F GP2Y0D805Z0F 2002/95/EC) E4-A01001EN sharp cmos SENSOR water SENSOR WASHING reflective photo sensor GP2Y0 carbon black 2025 KODAK Gray Cards U4001 B U4001 gp2y0d805

    NT7532

    Abstract: No abstract text available
    Text: UNCONTROLLED DOCUMENT NOTES: REV, 1. BI-COLOR LED BACKLIGHT, 4-70nm BLUE, 525nm GREEN. 0 2. NOVATEK 1C: NT7532. 1.00 [0 .0 3 9 ] — I 1.60 E0.063] MAX. G LASS 30.00 [1.181] 27.00 Cl.0 6 3 ] V A PART NUMBER REV. LCM-S6464CGWF B E.C.N. NUMBER AND REVISION COMMENTS


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    PDF 4-70nm 525nm NT7532. LCM-S6464CGWF NT7532

    smd transistor 2gu

    Abstract: smd 5b1 5B1 zener diode smd transistor 5B1 smd diode hn 5B1 package SMD smd TRANSISTOR code AJ e3062a SMD DIODE 517 BTS442D2
    Text: • □0^27^5 aP3SbGS SIEM ENS ST1 ■ PROFET BTS 442 D2 Smart Highside Power Switch Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation Features • • • • • • • • Overload protection


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    PDF capac05-A2 O-220AB/5, E3043 E3043 Q67060-S6205-A3 O-22QAB/5, E3062 BTS442D2 E3062A Q67060-S6205-A4 smd transistor 2gu smd 5b1 5B1 zener diode smd transistor 5B1 smd diode hn 5B1 package SMD smd TRANSISTOR code AJ e3062a SMD DIODE 517

    Untitled

    Abstract: No abstract text available
    Text: • ñ 2 3 S bO S 0Dñl45fl 0«ïb SIEMENS PROFET BTS426L1 Smart Highside Power Switch Product Summary Features • • • • • • • • • • • • Load dump and reverse battery protection1 VLoad dump Clamp of negative voltage at output V b b -i/o u T A v a la n c h e C la m p


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    PDF l45fl BTS426L1 fl235b05 A235Lj05

    BTS409L1

    Abstract: E3062 siemens profet description E3043 E3062A smd diode EG - 413 Q67060S6107A2 v2l smd zener
    Text: Û235bd5 00fim04 =115 S IE M E N S PROFET BTS409L1 Smart Highside Power Switch Features Product Summary • Load dump and reverse battery protection1 M-Oad dump • Clamp of negative voltage at output Wbb-VbuT Avalanche • Short-circuit protection Vbb operation)


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    PDF 235bd5 00fim04 BTS409L1 23SbOS O-22QAB/5 Q67060-S6107-A2 O-22QAB/5, E3043 BTS409L1 E3062 siemens profet description E3062A smd diode EG - 413 Q67060S6107A2 v2l smd zener

    3Tg 21 10 siemens

    Abstract: 3TG siemens smd transistor ng ha T72 diode of 45 kv BTS432 BTS 432 E3062A siemens 3TG BTS432F* smd Q67060-S6203-A4 3Tg 21 20 siemens
    Text: SIEMENS ö23SbüS OOTclfibO ] i b 3 WË PROFET BTS 432 F2 Smart Highside Power Switch Features • • • • • • • • • • • • Product Summary Load dump and reverse battery protection1 H-oad dump 80 Clamp of negative voltage at output Vbb- V o u t Avalanche Clamp


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    PDF 023Stà O-22QAB/5 Q67060-S6203-A2 O-22QAB/5, E3043 E3043 Q67060-S6203-A4 cpt031m E3062 3Tg 21 10 siemens 3TG siemens smd transistor ng ha T72 diode of 45 kv BTS432 BTS 432 E3062A siemens 3TG BTS432F* smd Q67060-S6203-A4 3Tg 21 20 siemens

    multicolor led 2 pin

    Abstract: Common Cathode RGB LEDS 5mm 4 pin multi color led 5D-18 multicolor led 2 pin rgb rgb led moving message display 5mm rgb led 5mm Common Cathode RGB LEDS 5mm Multicolor LED CRGB-5D18
    Text: Multi-Color LED CRGB-5D18 R E S E A R C H - I N C The Leader in Silicon Carbide Solid State Technology Features • Red, Green and Blue LEDs in a single package • Generate any color including: red, orange, yellow, green, aqua, blue, violet and white RGB Lamp Specs


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    PDF CRGB-5D18 12mcd 640nm 555nm 466nm 630nm 560nm 481nm 250457b multicolor led 2 pin Common Cathode RGB LEDS 5mm 4 pin multi color led 5D-18 multicolor led 2 pin rgb rgb led moving message display 5mm rgb led 5mm Common Cathode RGB LEDS 5mm Multicolor LED

    silicon carbide

    Abstract: silicon carbide LED cree c470
    Text: CREE RESEARCH INC 4ÖE ]> E5G457b 0000051 17b • CRErW/*¿ Silicon Carbide Blue LED C470-5D Description The C470-5D is a silicon carbide LED die with a 70nm peak wavelength and a typical optical power output of 13|iW when encapsulated in a standard clear epoxy package. Typical applications include full color com­


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    PDF E5G457b C470-5D C470-5D 470nm 250457b 919J361 silicon carbide silicon carbide LED cree c470

    Untitled

    Abstract: No abstract text available
    Text: UNCONTROLLED DOCUMENT 4.00 [0.157] 2.3 CO,091] 03.00 MO.118] PA R T N U M B ER REV. SSF—LXH305USBD —TR B REV. E.C.N . N U M B ER AND R EV ISIO N COMM ENTS A E.C.N . #10782. B E .C .N . # 1 0 8 5 5 DATE I 1.6.01 4.22 . D2 5,50 [0,217] 3.50 [0,1 3 8 ] CAUTION: STATIC SENSITIVE DEVICE


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    PDF SSF--LXH305USBD D5CU35URE

    transistor DA3 307

    Abstract: transistor DA3 309 HC-49/transistor DA3 307 DA3 307
    Text: • fl235bDS 0 0 8 1 4 4 4 5T1 SIEMENS PROFET BTS412B2 Smart Highside Power Switch Features • • • • • • • • • • • • • Overload protection Current limitation Short circuit protection Thermal shutdown Overvoltage protection including load dump


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    PDF fl235bDS BTS412B2 as35bos 412B2 transistor DA3 307 transistor DA3 309 HC-49/transistor DA3 307 DA3 307

    Untitled

    Abstract: No abstract text available
    Text: SIEM EN S BTS 730 PWM Power Unit The device allows continuous power control for lamps,LEDs or inductive loads. • Highside switch • Overtemperatur protection • Short circuit / overload protection through pulse width reduction and overload shutdown • Load dump protection


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    PDF fi235hDS flE35bÃ

    GP2YOA21YK

    Abstract: GP2012 of GP2D12 Sharp GP2D12 distance measuring sensor GP2Y0A02YK REFLECTIVE OBJECT SENSOR GP2D12 sharp GP2D12 optical sensor distance meter SUN POSITION SENSOR
    Text: SHARP Feb 18,2003 GENERAL APPLICATION NOTE: DISTANCE MEASURING SENSORS Opto-Electronic Devices Div. ELECOM Group SHARP CORPORATION SHARP INTRODUCTION: At this time, the Sharp family of Distance Measuring Sensors includes the following part numbers: GP2D12


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    PDF GP2D12 GP2D150A GP2Y0A21YK GP2D15 GP2Y0D21YK GP2Y0D340K GP2Y0A02YK GP2Y0D02YK GP2D12 GP2YOA21YK GP2012 of GP2D12 Sharp GP2D12 distance measuring sensor GP2Y0A02YK REFLECTIVE OBJECT SENSOR sharp GP2D12 optical sensor distance meter SUN POSITION SENSOR

    2Y0A700

    Abstract: GP2Y0A700K0F GP2YOA700KOF 2y0a
    Text: SHARP 0PT0-ELECTR0N1C DEVICES DIVISION ELECTRONIC COMPONENTS GROUP SHARP CORPORATION SPECIFICATION f DEVICE SPECIFICATION FOR _ ' Distance Measuring Sensor MODELNo. GP2Y0A70QK0F V ' : . '• , Enclosed please find copies ofthe Specifications which consists of 10 pages including cover.


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    PDF GP2YOA700KOF GP2Y0A700K0F 2Y0A700 GP2Y0A700K0F GP2YOA700KOF 2y0a