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    NTD4804NT4G Search Results

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    NTD4804NT4G Price and Stock

    Rochester Electronics LLC NTD4804NT4G

    POWER FIELD-EFFECT TRANSISTOR, 1
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    DigiKey NTD4804NT4G Bulk 21,450 417
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    Flip Electronics NTD4804NT4G

    MOSFET N-CH 30V 14.5A/124A DPAK
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    DigiKey NTD4804NT4G Reel 12,753 900
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    onsemi NTD4804NT4G

    MOSFET N-CH 30V 14.5A/124A DPAK
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    NTD4804NT4G Digi-Reel 1
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    Avnet Americas NTD4804NT4G Reel 2,500 2,500
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    NTD4804NT4G Reel 4 Weeks 502
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    Bristol Electronics NTD4804NT4G 1,977
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    Quest Components NTD4804NT4G 1,581
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    Rochester Electronics NTD4804NT4G 21,450 1
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    TME NTD4804NT4G 1
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    Component Electronics, Inc NTD4804NT4G 5
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    Flip Electronics NTD4804NT4G 12,753
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    NTD4804NT4G Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    NTD4804NT4G On Semiconductor Power MOSFET 30 V, 117 A, Single N-Channel, DPAK Original PDF
    NTD4804NT4G On Semiconductor NTD4804 - TRANSISTOR 14.5 A, 30 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369C-01, DPAK-3, FET General Purpose Power Original PDF

    NTD4804NT4G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    04NG

    Abstract: 48 04NG 369D NTD4804N NTD4804NT4G 4804NG WA117
    Text: NTD4804N Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4804N NTD4804N/D 04NG 48 04NG 369D NTD4804N NTD4804NT4G 4804NG WA117

    48 04NG

    Abstract: 04NG 4804NG 4804N NTD4804NT4G DASF0034379 369D NTD4804N NTD4804N-1G
    Text: NTD4804N Power MOSFET 30 V, 117 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com


    Original     		PDF NTD4804N NTD4804N/D 48 04NG 04NG 4804NG 4804N NTD4804NT4G DASF0034379 369D NTD4804N NTD4804N-1G

    48 04NG

    Abstract: 4804NG 04NG NTD4804NT4G 4804N
    Text: NTD4804N Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4804N NTD4804N/D 48 04NG 4804NG 04NG NTD4804NT4G 4804N

    Untitled

    Abstract: No abstract text available
    Text: NTD4804N, NVD4804N Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified − NVD4804N These Devices are Pb−Free and are RoHS Compliant


    Original     		PDF NTD4804N, NVD4804N NTD4804N/D

    NTP2955G

    Abstract: m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G
    Text: 5V ±3% 80 mA 0.8 V — 6 mA 1 mA CS8101 5V ±2% 100 mA 0.6 V 50 mA 140 mA (100 mA) CS8151 5V ±2% 100 mA 0.6 V — 750 mA (200 mA) CS8221 5V ±2% 100 mA 0.6 V — NCV317L Adj ±4% 100 mA 1.9 V (Typ) — Overvoltage Current Limit Wakeup l Overtemperature


    Original     		PDF CS8101 CS8151 CS8221 NCV317L NCV553 SC-82 SOIC-20 SGD516/D NTP2955G m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G

    48 04NG

    Abstract: 4804ng 04NG 4804N NTD4804NT4G 369D NTD4804N WA117
    Text: NTD4804N Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4804N NTD4804N/D 48 04NG 4804ng 04NG 4804N NTD4804NT4G 369D NTD4804N WA117

    04NG

    Abstract: 48 04NG 4804NG 369D NTD4804N 4804N
    Text: NTD4804N Power MOSFET 30 V, 117 A, Single N-Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com V(BR)DSS


    Original     		PDF NTD4804N NTD4804N/D 04NG 48 04NG 4804NG 369D NTD4804N 4804N

    04NG

    Abstract: 4804N 48 04NG 4804NG NTD4804NT4G
    Text: NTD4804N Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4804N NTD4804N/D 04NG 4804N 48 04NG 4804NG NTD4804NT4G

    48 04NG

    Abstract: NVD4804N 04NG 369D NTD4804N 4804NG NVD4
    Text: NTD4804N, NVD4804N Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified − NVD4804N These Devices are Pb−Free and are RoHS Compliant


    Original     		PDF NTD4804N, NVD4804N NTD4804N/D 48 04NG NVD4804N 04NG 369D NTD4804N 4804NG NVD4

    48 04NG

    Abstract: 04NG
    Text: NTD4804N, NVD4804N Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified − NVD4804N These Devices are Pb−Free and are RoHS Compliant


    Original     		PDF NTD4804N, NVD4804N NTD4804N/D 48 04NG 04NG