123AP
Abstract: NTE159 NTE123AP NTE290A 935-6072 NTE184 NTE199 NTE128 NTE293 NTE130
Text: NTE Electronics Transistors Bi-Polar Transistors Ñ Continued Stock No. Mfr.Õs Type Polarity and Material Description and Application 935-0755 935-0760 935-0840 935-0841 935-0845 935-0855 107 108 123A 123AP 124 126 NPN-Si NPN-Si NPN-Si NPN-Si NPN-Si PNP-Ge
|
Original
|
PDF
|
123AP
NTE159)
NTE396)
NTE375)
NTE159
NTE123AP
NTE290A
935-6072
NTE184
NTE199
NTE128
NTE293
NTE130
|
sfh 3310
Abstract: IEC 61760-1
Text: 2007-05-29 Silicon NPN Phototransistor with Vλ Characteristics NPN-Silizium-Fototransistor mit Vλ-Charakteristik Version 1.0 SFH 3310 Features: Besondere Merkmale: • Spectral range of sensitivity: 350 . 970 nm • Spektraler Bereich der Fotoempfindlichkeit:
|
Original
|
PDF
|
D-93055
sfh 3310
IEC 61760-1
|
Untitled
Abstract: No abstract text available
Text: 2014-01-14 Silicon NPN Phototransistor with Vλ Characteristics NPN-Silizium-Fototransistor mit Vλ-Charakteristik Version 1.1 SFH 3310 Features: Besondere Merkmale: • Spectral range of sensitivity: typ 350 . 970 nm • Package: 3mm Radial (T 1), Epoxy
|
Original
|
PDF
|
D-93055
|
GH1-231QG
Abstract: GH1-231QH GH1-231QK GH1-231QX GH1-331QA GH1-331QB GH1-331QD GH1-331QE GH1-431QC GH1-431QF
Text: GH1 电感式接近开关 31 5 外形编号 检测距离 Sn[mm] NPN 常开 NPN 常闭 GH1-331QA GH1-331QB NPN 一开一闭 DC PNP 常开 备 型 PNP 常闭 PNP 一开一闭 型 二线制 常开 具 二线制 常闭 号 二线制 常开 AC 二线制 常闭
|
Original
|
PDF
|
GH1-331QA
GH1-331QB
GH1-431QC
GH1-331QD
GH1-331QE
GH1-431QF
GH1-231QG
GH1-231QH
GH1-231QK
GH1-231QX
GH1-231QG
GH1-231QH
GH1-231QK
GH1-231QX
GH1-331QA
GH1-331QB
GH1-331QD
GH1-331QE
GH1-431QC
GH1-431QF
|
sfh 3310
Abstract: 560nm GEOY6446 OHLY0598 npn phototransistor 560nm
Text: NPN-Si-Fototransistor mit Vλ Charakteristik Silicon NPN Phototransistor with Vλ Characteristics Lead Pb Free Product - RoHS Compliant SFH 3310 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 350 nm bis 970 nm • Angepasst an die Augenempfindlichkeit (Vλ)
|
Original
|
PDF
|
|
GEOY6446
Abstract: OHLY0598 npn phototransistor 560nm
Text: NPN-Si-Fototransistor mit Vλ Charakteristik Silicon NPN Phototransistor with Vλ Characteristics Lead Pb Free Product - RoHS Compliant SFH 3310 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 350 nm bis 970 nm • Angepasst an die Augenempfindlichkeit (Vλ)
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: NPN-Si-Fototransistor mit Vλ Charakteristik Silicon NPN Phototransistor with Vλ Characteristics Lead Pb Free Product - RoHS Compliant SFH 3310 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 350 nm bis 970 nm • Angepasst an die Augenempfindlichkeit (Vλ)
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: NPN-Si-Fototransistor mit Vλ Charakteristik Silicon NPN Phototransistor with Vλ Characteristics Lead Pb Free Product - RoHS Compliant SFH 3310 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 350 nm bis 970 nm • Angepasst an die Augenempfindlichkeit (Vλ)
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: 2N5002 Silicon NPN Transistor Data Sheet Description Applications Complement to the 2N5003 • High-speed power-switching • Power Transistor • NPN silicon transistor Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E
|
Original
|
PDF
|
2N5002
2N5003
MIL-PRF-19500
2N5002J)
2N5002JX)
2N5002JV)
MIL-STD-750
MIL-PRF-19500/534
|
Untitled
Abstract: No abstract text available
Text: 2N5004 Silicon NPN Transistor Data Sheet Description Applications • High-speed power-switching • Power Transistor • NPN silicon transistor Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5004J
|
Original
|
PDF
|
2N5004
MIL-PRF-19500
2N5004J)
2N5004JX)
2N5004JV)
MIL-STD-750
MIL-PRF-19500/534
|
2N5002
Abstract: 2N5002J 2N5002JV 2N5002JX 2N5003
Text: 2N5002 Silicon NPN Transistor Data Sheet Description Applications Complement to the 2N5003 • High-speed power-switching • Power Transistor • NPN silicon transistor Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E
|
Original
|
PDF
|
2N5002
2N5003
MIL-PRF-19500
2N5002J)
2N5002JX)
2N5002JV)
MIL-STD-750
MIL-PRF-19500/534
2N5002
2N5002J
2N5002JV
2N5002JX
2N5003
|
2N5004
Abstract: 2N5004 JANTXV NPN/transistor C 331 switching transistor 331 2N5004J 2N5004JV 2N5005
Text: 2N5004 Silicon NPN Transistor Data Sheet Description Applications Complement to the 2N5005 • High-speed power-switching • Power Transistor • NPN silicon transistor Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E
|
Original
|
PDF
|
2N5004
2N5005
MIL-PRF-19500
2N5004J)
2N5004JX)
2N5004JV)
MIL-STD-750
MIL-PRF-19500/534
2N5004
2N5004 JANTXV
NPN/transistor C 331
switching transistor 331
2N5004J
2N5004JV
2N5005
|
2N5004
Abstract: No abstract text available
Text: 2N5004 Silicon NPN Transistor Data Sheet Description Applications Complement to the 2N5005 • High-speed power-switching • Power Transistor • NPN silicon transistor Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E
|
Original
|
PDF
|
2N5004
2N5005
MIL-PRF-19500
2N5004J)
2N5004JX)
2N5004JV)
MIL-STD-750
MIL-PRF-19500/534
2N5004
|
Untitled
Abstract: No abstract text available
Text: BCX56-10R1 Preferred Device NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-89 package, which is designed for medium power surface mount applications.
|
Original
|
PDF
|
BCX56-10R1
OT-89
inch/1000
100mA
250mA
500mA
|
|
|
philips bfq
Abstract: BFQ263 BFQ263A RK 100
Text: Product specification Philips S em iconductors - r & 3 ~ DESCRIPTION > 5 BFQ263; BFQ263A NPN 1 GHz video transistors • 5bE D PHILIPS IN TE RNATIONAL c 711062t. 0045b4û 331 « P H I N PINNING NPN silicon epitaxial transistor in a SOT5 TO-39 envelope with
|
OCR Scan
|
PDF
|
BFQ263;
BFQ263A
711062b
0045biÂ
711Qfl2b
T-33-05
philips bfq
BFQ263
BFQ263A
RK 100
|
npn transistor dc 558
Abstract: BFQ22S transistor dc 558 npn BFQ24 Transistor 5331 BFQ22
Text: Philips Semiconductors • ^ 53*331 Q O B IS Ü T 4 4 e! M APX Product specification NPN 6 GHz wideband transistor " ■111,1 BFQ22S b'IE J> N AMER PHILIPS/DISCRETE DESCRIPTION PINNING NPN transistor in a TO-72 métal envelope with insulated electrodes and a shield lead connected to the
|
OCR Scan
|
PDF
|
BFQ22S
BFQ24.
bb53c131
DD3151S
BFQ22S
npn transistor dc 558
transistor dc 558 npn
BFQ24
Transistor 5331
BFQ22
|
40411 transistor
Abstract: transistor 40411 TO-59 Package npn 40411 sdn6253 2N6571 SDN6251 2NXXXX MJ480 jedec Package TO-39
Text: 880 0 0 79 8 8 2 5 4 0 2 2 S IL IC O N TRANSISTOR CORP. NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued flö Polarity lc Max Amps 2N6465 2N6466 2N6468 2N6469 2N6470 NPN NPN PNP PNP NPN 4.0 4.0 4.0 15.0 15.0 110 130 130 50 50 TO-66 TO-66 TO-66
|
OCR Scan
|
PDF
|
2N6465
2N6466
2N6468
2N6469
2N6470
2N6471
2N6472
2N6495
2N6496
2N6500
40411 transistor
transistor 40411
TO-59 Package
npn 40411
sdn6253
2N6571
SDN6251
2NXXXX
MJ480
jedec Package TO-39
|
Untitled
Abstract: No abstract text available
Text: Product specification Philips Semiconductors NPN general purpose transistor BC846W; BC847W; BC848W PIN CONFIGURATION FEATURES • S- mini package. n* n1 DESCRIPTION NPN transistor in a plastic SOT323 SC70 package. PINNING - SOT323 PIN Top view DESCRIPTION
|
OCR Scan
|
PDF
|
BC846W;
BC847W;
BC848W
OT323
MBC670
BC846AW:
BC846BW:
BC847W:
BC846W
|
Untitled
Abstract: No abstract text available
Text: ri7 SGS-THOMSON ^ 7# usiieBsiiLEeraoiiies BUL67 HIGH VOLTAGE FAST-SWITCHING NPN POW ER TRANSISTOR . . . . . SGS-THOMSON PREFERRED SALESTYPE HIGH RUGGEDNESS NPN TRANSISTOR HIGH VOLTAGE CAPABILITY MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION . VERY HIGH SWITCHING SPEED
|
OCR Scan
|
PDF
|
BUL67
BUL67
|
Untitled
Abstract: No abstract text available
Text: @ OFTEK Product Bulletin OP593A June 1996 NPN Plastic Silicon Phototransistors Types OP593, OP598 Series Features • Wide receiving angle • Variety of sensitivity ranges • TO-18 equivalent package style Description The OP593/598 series consist of NPN
|
OCR Scan
|
PDF
|
OP593A
OP593,
OP598
OP298
/OP598
|
Untitled
Abstract: No abstract text available
Text: 0 . OPTEK Product Bulletin OP593A June 1996 NPN Plastic Silicon Phototransistors Types OP593, OP598 Series Features • Wide receiving angle • Variety of sensitivity ranges • TO-18 equivalent package style Description The OP593/598 series consist of NPN
|
OCR Scan
|
PDF
|
OP593A
OP593,
OP598
OP593/598
OP593JOP598
|
Untitled
Abstract: No abstract text available
Text: Central CMPTA29 Sem iconductor Corp. HIGH VOLTAGE NPN SILICON DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA29 is a Silicon NPN Darlington T ransistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring
|
OCR Scan
|
PDF
|
CMPTA29
CMPTA29
OT-23
100mA,
100mA
100MHz
|
2N2222A 331
Abstract: No abstract text available
Text: I lll iF t i mi 2N2222ACSM4 SEME LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN
|
OCR Scan
|
PDF
|
2N2222ACSM4
2N2222A
150mA
00D15Ã
2N2222A 331
|
Tfk 880
Abstract: TFK 804 TFK 802 S45C tfk bfx89 BFX89 tfk 332 ir tfk case BFX89
Text: Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: Allgem ein bis in den GHz-Bereich Applications: General, up to the GHz ränge Besondere Merkmale: Features: • Leistungsverstärkung 7 dB • Power gain 7 dB
|
OCR Scan
|
PDF
|
BFX89
470pF
20x4x0
Tfk 880
TFK 804
TFK 802
S45C
tfk bfx89
BFX89
tfk 332
ir tfk
case BFX89
|
