Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE t^ E D • bb53c131 D03bb70 174 BYV96D A IAPX BYV96E AVALANCHE FAST SOFT-RECOVERY RECTIFIER DIODES Glass passivated rectifier diodes in hermetically sealed axial-leaded glass envelopes. They are intended for television and industrial applications, such as switched-mode power supplies, scan
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bb53c
D03bb70
BYV96D
BYV96E
D02bb7b
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2N2222A 331
Abstract: 2n2222 h 331 transistors 2n2222 -331 2n2222 a 331 2n2222 331 transistors 2n2222 - 331 2n2222 h 331 2n2222+h+331+transistors 2n2222+a+331 2n2222a
Text: N AflER PHILIPS/DISCRETE b'lE D bb53c131 QDEAQfibi T5D I IAPX 2N2222 2N2222A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a TO-18 metal envelope with the collector connected to the case. They are primar ily intended for high speed switching. The 2N2222 is also suitable fo r d.c. and v.h.f./u.h.f. amplifiers.
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bb53c
2N2222
2N2222A
2N2222
7Z85736
2N2222A 331
2n2222 h 331 transistors
2n2222 -331
2n2222 a 331
2n2222 331 transistors
2n2222 - 331
2n2222 h 331
2n2222+h+331+transistors
2n2222+a+331
2n2222a
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in4151
Abstract: IN4150 IN4153 diode IN4153 N4150 1N4151 1N4153 1N4150 IEC134 colourcoded diodes
Text: • bbSB'm 1N4150 1N4151 1N4153 OOEb'îOB 202 H A P X N APIER P HILI PS/D ISCR ETE b^E » ULTRA-HIGH-SPEED SILICON DIODES Whiskerless diodes in su b m in ia tu re DO -35 envelopes. T he IN 4 1 5 0 is p rim a rily intended fo r general purpose use in co m p u te r and in d u stria l applications.
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1N4150
1N4151
1N4153
DO-35
IN4150
IN4151
IN4153
N4150
IN4153
IN4153 diode
1N4151
1N4153
1N4150
IEC134
colourcoded diodes
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BYV43-40A
Abstract: BYV43-30 byv dual rectifier m2784 BYV43 BYV4313ERIES BYV4335 BYV43-40
Text: KI AMER PHILIPS/DISCRETE ObE » • ^ 5 3 1 3 1 GD11311 E ■ BYV43~SERIES T-03-19 ' SCHOTTKY—BARRIER DOUBLE RECTIFIER DIODES High-efficfency schottky-barrier double rectifier diodes in plastic envelopes, featuring low forward voltage drop, low capacitance and absence of stored charge. They are intended fo r use in switchedmode power supplies and high-frequency circuits in general, where both low conduction losses and zero
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GD11311
BYV4313ERIES
T-03-19
BYV43-40A,
BYV43-40A
BYV43-30
byv dual rectifier
m2784
BYV43
BYV4313ERIES
BYV4335
BYV43-40
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Untitled
Abstract: No abstract text available
Text: N AflER PHILIPS/DISCRETE DEVELOPMENT DATA1 • ObE D bb53T31 00135T4 1 ■ BGY94A BGY94B BGY94C T h l* dftta *h « *t c o n ttm t advance Infonnatloo and Jpecifrcatlon* are jubject to change w ithout notlea, _ _ 86D 01056 D -r.fH + b Q - a /
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bb53T31
00135T4
BGY94A
BGY94B
BGY94C
BGY94A,
BGY94B
BGY94C
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BLY94
Abstract: philips bly94
Text: II N AUER PHILIPS/DISCRETE b 'lE bbS3^31 002T75fl 22T BLY94 J> APX J V. V.H.F. POWER TRANSISTOR N-P-N planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 28 V. The transistor is resistance stabilized. Every tran
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002T75fl
BLY94
7Z67S60
BLY94
philips bly94
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Untitled
Abstract: No abstract text available
Text: BDT64; 64A BDT64B; 64C _ / V SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial base transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier and switching applications. TO-220 plastic envelope. NPN complements are BDT65,
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BDT64;
BDT64B;
O-220
BDT65,
BDT65A,
BDT65B
BDT65C.
BDT64
bbS3T31
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BUV89
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b^E » bbSB'lBl DDBflMTO TBS BUV89 IAPX SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed switching npn transistor in a plastic SOT93 envelope especially intended fo r use in AC m otor control systems from three-phase mains.
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BUV89
bb53T31
7Z88401
BUV89
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X72A
Abstract: x72a SOT23-6
Text: Product specification P h ilip s Sem iconductors CNX71A/CNX72A H igh-voltage optocouplers FEATURES • High current transfer ratio and a low saturation voltage, making the devices suitable for use with TTL integrated circuits • High degree of A C and D C
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CNX71A/CNX72A
T229B
CNX72A,
CNX71A.
E90700
wiCNX71A/CNX72A
7Z74M7
bb53c
00354bb
X72A
x72a SOT23-6
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE blE D • bfc.SB'lBl DDS7Mtm 733 « A P X BC107 to 109 A.F. SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-18 metal envelopes w ith the collector connected to the case. The BC107 is prim arily intended fo r use in driver stages o f audio amplifiers and in signal processing
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BC107
BC108
BC109
BC107
bb53c
DDS7S03
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bbS3T31 0027207 47T M A P X b^E D BT137F SERIES J V FULL-PACK TRIACS Glass-passivated 8 ampere triacs in SOT-186 envelopes, which feature an electrically isolated mounting base. They are intended fo r use in applications requiring high bidirectional transient and blocking
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bbS3T31
BT137F
OT-186
BT137Fâ
M2425
002721b
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Untitled
Abstract: No abstract text available
Text: N AMER PHIL IPS /DI SCRE TE bTE D m bbS3T31 DD3D7SD 711 W A P X Philips Semiconductors Product Specification PowerMOS transistor BUK543-60A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode
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bbS3T31
BUK543-60A/B
PINNING-SOT186
BUK543
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors bb53T31 0032347 386 W A P X Hybrid VHF push-pull amplifier module _ _ _ — FEATURES • • • • • Excellent linearity Extremely low noise Silicon nitride passivation Rugged construction TiPtAu metallized crystals ensure optimal reliability.
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bb53T31
BGY60
DIN45004B;
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Diode BYW 56
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bbS3T31 002bb77 525 » A P X b5E D BYW54 to 56 CONTROLLED AVALANCHE RECTIFIER DIODES Double-diffused glass passivated rectifier diodes in herm etically sealed axial-leaded glass envelopes, capable of absorbing reverse transients. They are intended for rectifier applications in colour television circuits as well as general purpose appli
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bbS3T31
002bb77
BYW54
7Z88032
Diode BYW 56
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