Untitled
Abstract: No abstract text available
Text: 7 8 6 5 3 4 1 2 REVISIONS REV ECN, ERN NO. DATE APPRD. B ECN E08315 NOV20/07 K.L. F F 4.50 .177 13.50 .531 22.40 .882 E E 10.00 .394 D D 7.35 .289 C C 16.00 .630 9.80 .386 NOTES: B 40.00 1.575 B 1. MATERIAL: CLEAR SILICONE RUBBER. 2. OPERATING TEMPERATURE: -40°C TO +150°C.
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E08315
NOV20/07
2002/95/EC
MRJ-258E-11-BP
JUN28/07
NOV18/07
E13132
P-MRJ-258E-11-BP
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Untitled
Abstract: No abstract text available
Text: Rev 3: Nov2004 AO4415, AO4415L Green Product P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4415 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load
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Nov2004
AO4415,
AO4415L(
AO4415
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STTH
Abstract: AV900
Text: STTH8L06 Turbo 2 ultrafast high voltage rectifier Features K • Ultrafast switching ■ Low reverse recovery current ■ Low thermal resistance ■ Reduces switching and conduction losses ■ Package insulation voltage: – TO-220AC Ins: 2500 V rms – TO-220FPAC: 2000 V DC
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STTH8L06
O-220AC
O-220FPAC:
STTH8L06D
O-220FPAC
STTH8L06FP
STTH8L06,
STTH8L06G
STTH
AV900
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KBP04G
Abstract: KBP10G
Text: LITE-ON SEMICONDUCTOR KBP04G thru KBP10G REVERSE VOLTAGE - 400 to 1000 Volts FORWARD CURRENT - 1.5 Amperes GLASS PASSIVATED BRIDGE RECTIFIERS KBP FEATURES Rating to 1000V PRV Ideal for printed circuit board Reliable low cost construction utilizing molded plastic
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KBP04G
KBP10G
E95060
300us
KBP10G
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GR-1089-CORE
Abstract: TB0640H TB0720H TB0900H TB1100H TB1300H TB4000H
Text: LITE-ON SEMICONDUCTOR TB0640H thru TB4000H Bi-Directional SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE VDRM IPP - 58 to 360 Volts - 100 Amperes FEATURES SMB Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 100A @ 10/1000us or 400
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TB0640H
TB4000H
10/1000us
8/20us
GR-1089-CORE
TB0720H
TB0900H
TB1100H
TB1300H
TB4000H
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L60ESDL2V8S8-4
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR L60ESDL2V8S8-4 STAND-OFF VOLTAGE - 2.8 Volts POWER DISSIPATION - 600 WATTS ESD PROTECTION DEVICE GENERAL DESCRIPTION SOP-8 The L60ESDL2V8S8-4 of transient voltage suppressors are designed to protect low voltage. This has been specifically designed to protect
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L60ESDL2V8S8-4
L60ESDL2V8S8-4
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Untitled
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR T16M25F800C TRIACS 16 AMPERES RMS 800 VOLTS Triacs Sillicon Bidirectional Thyristors TO-220FP FEATURES Passivated Die for Reliability and Uniformity Four-Quadrant Triggering Blocking Voltage VDRM&VRRM to 800 V Isolation Voltage R.M.S. 1500V
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T16M25F800C
O-220FP
O-220FP
Rati16
T16M25F
T16M25F800C
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R1U50-600A
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR R1U50-600A SCRs 1 AMPERES RMS 600 VOLTS Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors TO-92 TO-226AA FEATURES Sensitive Gate Allows Triggering by Microcontrollers and Other Logic Circuits Blocking Voltage to 600 Volts
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R1U50-600A
O-226AA)
R1U50-600A
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4005L
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR KBJ4005L thru KBJ410L REVERSE VOLTAGE - 50 to 1000Volts FORWARD CURRENT - 4.0 Amperes GLASS PASSIVATED BRIDGE RECTIFIERS FEATURES KBJ Rating to 1000V PRV Ideal for printed circuit board Reliable low cost construction utilizing molded plastic
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KBJ4005L
KBJ410L
1000Volts
E95060
300us
Nov-2004
KBDF05
4005L
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KBDG
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR GBJ2504 thru GBJ2510 REVERSE VOLTAGE - 400 to 1000 Volts FORWARD CURRENT - 25 Amperes GLASS PASSIVATED BRIDGE RECTIFIERS GBJ FEATURES Rating to 1000V PRV Ideal for printed circuit board Low forward voltage drop, high current capability.
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GBJ2504
GBJ2510
E95060
KBDG
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a1208
Abstract: No abstract text available
Text: LTTH806LF REVERSE VOLTAGE – 600Volts FORWARD CURRENT – 8.0 Ampere HYPER-FAST GLASS PASSIVATED RECTIFIER FEATURES ITO-220AC • Soft, Hyper fast switching capability • Specially suited for critical mode Power Factor Corrections. • High reliability and efficiency
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LTTH806LF
600Volts
ITO-220AC
J-STD-020C
2002/95/EC
JESD22-A114)
a1208
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intel 80196 microcontroller
Abstract: 68HC11 68HC12 68HC16 80C251 J1850 PLCC52 PQFP52 PSD913F2 PSD934F2
Text: PSD913F2 PSD934F2 PSD954F2 Flash In-System Programmable ISP Peripherals For 8-bit MCUs PRELIMINARY DATA FEATURES SUMMARY • Single Supply Voltage: Figure 1. Packages – 5 V±10% for PSD9xxF2 – 3.3 V±10% for PSD9xxF2-V ■ Up to 2Mbit of Primary Flash Memory (8 uniform
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PSD913F2
PSD934F2
PSD954F2
256Kbit
PQFP52
PLCC52
intel 80196 microcontroller
68HC11
68HC12
68HC16
80C251
J1850
PLCC52
PQFP52
PSD913F2
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Untitled
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR GLASS PASSIVATED UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS 15KP SERIES REVERSE VOLTAGE - 17 to 200 Volts POWER DISSIPATION - 15000 WATTS R-6 FEATURES Glass passivated chip Low leakage Uni and Bidirectional unit Excellent clamping capability
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15KP100
15KP110
15KP120
15KP130
15KP150
15KP160
15KP170
15KP180
15KP200
15KP100C
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15SQ045
Abstract: No abstract text available
Text: 15SQ045 SCHOTTKY BARRIER RECTIFIERS For PV Solar Cell Bypass Protection REVERSE VOLTAGE FORWARD CURRENT – 45 Volts – 15 Amperes FEATURES R6 • Metal of silicon rectifier, majority carrier conduction • Guard ring for transient protection • Low power loss, high efficiency
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15SQ045
15SQ045
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Untitled
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR GLASS PASSIVATED UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS 3KP SERIES REVERSE VOLTAGE - 5.0 to 220 Volts POWER DISSIPATION - 3000 WATTS R-6 FEATURES Glass passivated chip Low leakage Uni and Bidirectional unit Excellent clamping capability
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Untitled
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR GLASS PASSIVATED UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS 5KP SERIES REVERSE VOLTAGE - 5.0 to 180 Volts POWER DISSIPATION - 5000 WATTS R-6 FEATURES Glass passivated chip Low leakage Uni and Bidirectional unit Excellent clamping capability
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5KP54C
5KP54CA
5KP58C
5KP58CA
5KP60C
5KP60CA
5KP64C
5KP64CA
5KP70C
5KP70CA
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Untitled
Abstract: No abstract text available
Text: B320B thru B340B REVERSE VOLTAGE – 20 to 40 Volts FORWARD CURRENT – 3.0 Amperes SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS FEATURES • For surface mounted application SMB • Metal-Semiconductor junction with guard ring • Epitaxial construction • Very Low forward voltage drop
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B320B
B340B
300us
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Untitled
Abstract: No abstract text available
Text: LBR106 thru LBR110 LEADLESS SURFACE MOUNT BRIDGE RECTIFIER REVERSE VOLTAGE – 600 to 1000 Volts FORWARD CURRENT – 1.0 Ampere LBR FEATURES • Low profile package – 1.00mm • Low power loss & high efficiency • High current capability MECHANICAL DATA
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LBR106
LBR110
J-STD-002
JESD22-B102
2002/95/EC
JESD22-A114)
J-STD-020C
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3KP10
Abstract: 3KP10A 3KP11 3KP11A 3KP12 3KP12A 3KP13 3KP13A 3KP14
Text: LITE-ON SEMICONDUCTOR GLASS PASSIVATED UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS 3KP SERIES REVERSE VOLTAGE - 5.0 to 220 Volts POWER DISSIPATION - 3000 WATTS R-6 FEATURES Glass passivated chip Low leakage Uni and Bidirectional unit Excellent clamping capability
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filotex-50 mfcfb
Abstract: 1-225349-1 225349-6
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. REVISIONS DIST AJ 16 LTR DESCRIPTION M A A MAX 2. B MAX 3 SAFETY E Q U A LL Y MAX — EC PER 0 5 1 4 - 0 1 9 2 - 0 4 11 NOV2004 OWN
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NOV2004
31MAR2000
filotex-50 mfcfb
1-225349-1
225349-6
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Untitled
Abstract: No abstract text available
Text: TH I S DRAW I NG IS UNPUBLI S HE D. RELEASED BY C O P Y RI G HT 20 TYCO ELECTRONICS F OR CORPORATION. ALL PUBLICATION R 1G H T S 20 L OC RESERVED. D I ST PT R E V LTR I S I O N S DESCRIPTION DATE DWN APVD RELEASED R E V I S E D PER 0 G 3 B - 0 I 19- 01 12NOV2Û Û I
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12NOV2Û
94-VO,
NOV20
07NOV2001
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION - , LOC ALL RIGHTS RESERVED. COPYRIGHT CM BY TYCO ELECTR0NIC5 CORPORATION. D IST REVISIONS 00 LTR DESCRIPTION DATE 0 7 —NOV—02 REVISED PER 0 G 3 B - 0 3 6 7 - 0 2 POST TO WITHSTAND 1 3 NEWTONS 3 L B S . MIN. AXIAL
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--NOV--02
NOV-2002
07--NOV--
31MAR2000
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Untitled
Abstract: No abstract text available
Text: TH I S DRAW ING IS UNPUBLI SHED. C O P Y R I G HT 2 0 RELEASED BY TYCO ELECTRONICS FOR CORPORATION. ALL PUBLICATION R 1G H T S 20 LOC PT RESERVED. REV I S IONS D I ST LTR DESCRIPTION DATE DWN APVD RELEASED REVISED PER 0 G 3 B - 0 I 19-01 12 N O V 2 Û Û I
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NOV20
07NOV2001
S-282893
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Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 4 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. REVISIONS DIST CM 00 LTR DESCRIPTION EC 0G3B 1011 DATE 19MAR05 04 DWN APVD BSV DPB T .180 ri-, ri-, ri-, + + + ri-, i .300+.01 5
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19MAR05
NOV-2002
07--NOV--2002
NOV-2002
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