SAMSUNG MCP
Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)
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KBB0xB400M
16Mx16)
4Mx16)
80-Ball
80x12
SAMSUNG MCP
ECH information
KBB0xB400M
BA102
ba4901
UtRAM Density
BA5101
samsung NAND memory
BGA180
ba30 transistor
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EIA/JEDEC JESD22-A110-B
Abstract: JESD22-A117 JESD22 JESD22a117
Text: Reliability Study AMD MirrorBit RELIABILITY STUDY White Paper OVERVIEW The MirrorBit™ cell is a breakthrough in NOR Flash memory cell architecture that enables a Flash memory product to hold twice as much data as standard Flash, without compromising device endurance, performance
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5M-11/02-0
6203A
EIA/JEDEC JESD22-A110-B
JESD22-A117
JESD22
JESD22a117
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S72WS512PFFJF9GH
Abstract: BGA 15X15 BGA 130 MCP NAND DDR 12X12 POP PACKAGE TRAY 15x15 bta 137 S72WS512PFFKFKGH N-ADQ14 NAND01
Text: S72WS-P based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus Simultaneous Read/Write, Burst Mode NOR Flash NAND Flash or NAND Interface ORNAND Flash on Bus 1 Mobile SDRAM on Bus 2 S72WS-P based MCP/PoP Products Cover Sheet Data Sheet Advance Information
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S72WS-P
S72WS512PFFJF9GH
BGA 15X15
BGA 130 MCP NAND DDR
12X12 POP PACKAGE
TRAY 15x15
bta 137
S72WS512PFFKFKGH
N-ADQ14
NAND01
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BGA 130 MCP NAND DDR
Abstract: JEP95 137-Ball DSA00272754 Flash MCp nand DRAM 137-ball S72WS512PEF N-ADQ12 130 MCP NAND DDR NAND FLASH BGA Flash MCp nand DRAM 107-ball
Text: S72WS-P based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus Simultaneous Read/Write, Burst Mode NOR Flash NAND Flash or NAND Interface ORNAND Flash on Bus 1 Mobile SDRAM on Bus 2 S72WS-P based MCP/PoP Products Cover Sheet Data Sheet Advance Information
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S72WS-P
BGA 130 MCP NAND DDR
JEP95
137-Ball
DSA00272754
Flash MCp nand DRAM 137-ball
S72WS512PEF
N-ADQ12
130 MCP NAND DDR
NAND FLASH BGA
Flash MCp nand DRAM 107-ball
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KBB0XA300M
Abstract: transistor ba47 SAMSUNG MCP BA108 BA102 BA99 NAND FLASH BGA BGA34 BGA22 t402
Text: Preliminary MCP MEMORY KBB0xA300M - T402 Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8/4Mx16 Dual Bank NOR Flash *2 / 128M Bit (8Mx16) NAND Flash / 32M Bit (2Mx16) UtRAM Revision History Revision No. History Draft Date Remark October 15, 2002 Preliminary
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KBB0xA300M
8Mx8/4Mx16)
8Mx16)
2Mx16)
80-Ball
80x12
transistor ba47
SAMSUNG MCP
BA108
BA102
BA99
NAND FLASH BGA
BGA34
BGA22
t402
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SAMSUNG MCP
Abstract: KBB05A500 transistor BA29 BA102 NAND FLASH BGA transistor ba47 Pre-programming nand samsung UtRAM Density BA841 BGA-100
Text: KBB0xA500M - T402 MCP MEMORY Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8/4Mx16 Dual Bank NOR Flash *2 / 128M Bit (8Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft October 15, 2002
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KBB0xA500M
8Mx8/4Mx16)
8Mx16)
4Mx16)
150uA
100uA
200uA
80-Ball
80x12
SAMSUNG MCP
KBB05A500
transistor BA29
BA102
NAND FLASH BGA
transistor ba47
Pre-programming nand samsung
UtRAM Density
BA841
BGA-100
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SAMSUNG MCP
Abstract: samsung toggle mode NAND ba7810 BA102 NAND FLASH BGA UtRAM Density BA5101 BA340 BGA-60
Text: SEC Only MCP MEMORY KAB0xD100M - TxGP Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8/4Mx16 Dual Bank NOR Flash / 128M Bit (8Mx16) NAND Flash / 32M Bit (2Mx16) UtRAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft March 20, 2002
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KAB0xD100M
8Mx8/4Mx16)
8Mx16)
2Mx16)
39page)
43page)
80-Ball
SAMSUNG MCP
samsung toggle mode NAND
ba7810
BA102
NAND FLASH BGA
UtRAM Density
BA5101
BA340
BGA-60
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Microsemi
Abstract: No abstract text available
Text: W764M32V1-XBX *PRELIMINARY 64Mx32 NOR Flash Multi-Chip Package 3V Page Mode Memory FEATURES GENERAL DESCRIPTION Single power supply operation The W764M32V1-XBX device is a 3V single power flash memory. The device utilizes two chips organized as 67,108,864 words. The
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W764M32V1-XBX
64Mx32
W764M32V1-XBX
32-bit
16-bit
1024-byte
Microsemi
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Untitled
Abstract: No abstract text available
Text: 512Mb, 3V Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 3V, Multiple I/O, 64KB, Sector Erase MT25QL512AB Features Options • Voltage – 2.7–3.6V • Density – 512Mb • Device stacking – Monolithic • Lithography – 45nm
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512Mb,
MT25QL512AB
512Mb
16-pin
SO16W,
SO16-Wide,
SOIC-16)
24-ball
05/6mm
TBGA24)
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Untitled
Abstract: No abstract text available
Text: W764M32V1-XBX 64Mx32 NOR Flash Multi-Chip Package 3V Page Mode Memory FEATURES GENERAL DESCRIPTION Single power supply operation The W764M32V1-XBX device is a 3V single power flash memory. The device utilizes two chips organized as 67,108,864 words. The
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W764M32V1-XBX
64Mx32
W764M32V1-XBX
32-bit
16-bit
1024-byte
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Untitled
Abstract: No abstract text available
Text: 1Gb, 1.8V Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 1.8V, Multiple I/O, 64KB Sector Erase MT25QU01GAB Features Options • Voltage – 1.7–2.0V • Density – 1Gb • Device stacking – Monolithic • Lithography – 45nm
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MT25QU01GAB
16-pin
SO16W,
SO16-Wide,
SOIC-16)
24-ball
05/6mm
TBGA24)
09005aef857a770a
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MT25QU02
Abstract: 0/CRC64
Text: 2Gb, 1.8V Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 1.8V, Multiple I/O, 64KB Sector Erase MT25QU02GAB Features Options • Voltage – 1.7–2.0V • Density – 2Gb • Device stacking – Monolithic • Lithography – 45nm
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MT25QU02GAB
16-pin
SO16W,
SO16-Wide,
SOIC-16)
24-ball
05/6mm
TBGA24)
09005aef857a7818
MT25QU02
0/CRC64
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W764M32V1-XBX
Abstract: No abstract text available
Text: W764M32V1-XBX *PRELIMINARY 64Mx32 NOR Flash Multi-Chip Package 3V Page Mode Memory FEATURES GENERAL DESCRIPTION Single power supply operation The W764M32V1-XBX device is a 3V single power flash memory. The device utilizes two chips organized as 67,108,864 words. The
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W764M32V1-XBX
64Mx32
W764M32V1-XBX
32-bit
16-bit
1024-byte
prx32
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MT25QU512
Abstract: No abstract text available
Text: 512Mb, 1.8V Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 1.8V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase MT25QU512AB Features Options • Voltage – 1.7–2.0V • Density – 512Mb • Device stacking – Monolithic • Lithography
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512Mb,
MT25QU512AB
512Mb
16-pin
SO16W,
SO16-Wide,
SOIC-16)
24-ball
05/6mm
TBGA24)
MT25QU512
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S30ML01GP
Abstract: S30ML512P S29PL127N S29PL-N S30ML-P S75PL127NBF S75PL-N S30ML01 tray matrix bga
Text: S75PL-N MirrorBit ORNAND™ MCPs Stacked Multi-Chip Product MCP S29PL-N: CMOS 3.0 Volt-only Simultaneous Read/Write, Page-mode Flash Memory (NOR Interface) S30ML-P: ORNAND Flash (NAND Interface) 3V pSRAM S75PL-N MirrorBit™ ORNAND™ MCPs Cover Sheet
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S75PL-N
S29PL-N:
S30ML-P:
S30ML01GP
S30ML512P
S29PL127N
S29PL-N
S30ML-P
S75PL127NBF
S30ML01
tray matrix bga
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MT25QL01
Abstract: No abstract text available
Text: 1Gb, 3V Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase MT25QL01GB Features Options • Voltage – 2.7–3.6V • Density – 1Gb • Device stacking – Monolithic • Lithography – 45nm
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MT25QL01GB
24-ball
05/6mm
TBGA24)
09005aef8579b8b4
MT25QL01
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Untitled
Abstract: No abstract text available
Text: 2Gb, 3V Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase MT25QL02GC Features Options • Voltage – 2.7–3.6V • Density – 1Gb • Device stacking – Monolithic • Lithography – 45nm
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MT25QL02GC
24-ball
05/6mm
TBGA24)
09005aef8579b8b8
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Untitled
Abstract: No abstract text available
Text: W764M32V-XSBX Not Recommended for New Designs — Replaced by W764M32V1-XBX 64Mx32 NOR Flash Multi-Chip Package 3.0V Page Mode Flash Memory Hardware features FEATURES Single power supply operation • Advanced Sector Protection • WP#/ACC input accelerates programming time when
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W764M32V-XSBX
W764M32V1-XBX
64Mx32
W764M32V1-XBX"
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VFBGA 112-ball Pb free
Abstract: s29ns-n_00 S29NS-N S30MS-P S75NS128NBF S75NS128NBG S75NS-N MMB112-11
Text: S75NS-N S29NS-N: MirrorBit 1.8 Volt-only Simultaneous Read/ Write, Burst-mode Multiplexed Flash NOR Interface S30MS-P: ORNAND™ Flash (NAND interface) Multiplexed Synchronous pSRAM S75NS-N Cover Sheet Data Sheet (Advance Information) Notice to Readers: This document states the current technical specifications regarding the Spansion
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S75NS-N
S29NS-N:
S30MS-P:
S75NS-N
VFBGA 112-ball Pb free
s29ns-n_00
S29NS-N
S30MS-P
S75NS128NBF
S75NS128NBG
MMB112-11
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Untitled
Abstract: No abstract text available
Text: Preliminary‡ 1Gb, 1.8V Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 1.8V, Multiple I/O, 64KB Sector Erase MT25QU01GAB Features • • • • • • • • • • • • • • Erase capability – Bulk erase – Sector erase 64Kb uniform granularity
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MT25QU01GAB
09005aef857a770a
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MT25QL02G
Abstract: MT25QL02GC
Text: Preliminary‡ 2Gb, 3V Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase MT25QL02GC Features • • • • • • • • • • • • • • Erase capability – Bulk erase – Sector erase 64Kb uniform granularity
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MT25QL02GC
09005aef8579b8b8
MT25QL02G
MT25QL02GC
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S30MS-P
Abstract: AMB128 S29WS-P S75WS256PEFJF5 S75WS256PEFKFF S75WS-P UtRAM Density Spansion NAND Flash DIE MS512P
Text: S75WS-P based MCP/POP Products 1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash NOR Interface S30MS-P (NAND Interface) ORNAND Flash pSRAM Type 2 S75WS-P based MCP/POP Products Cover Sheet Data Sheet (Advance Information) Notice to Readers: This document states the current technical specifications regarding the Spansion
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S75WS-P
S30MS-P
S30MS-P
AMB128
S29WS-P
S75WS256PEFJF5
S75WS256PEFKFF
UtRAM Density
Spansion NAND Flash DIE
MS512P
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MT25QL01
Abstract: No abstract text available
Text: Preliminary‡ 1Gb, 3V Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase MT25QL01GB Features • • • • • • • • • • • • • • Erase capability – Bulk erase – Sector erase 64Kb uniform granularity
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MT25QL01GB
09005aef8579b8b4
MT25QL01
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Untitled
Abstract: No abstract text available
Text: Preliminary‡ 512Mb, 3V Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase MT25QL512AB Features • • • • • • • • • • • • • • Erase capability – Bulk erase – Sector erase 64Kb uniform granularity
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512Mb,
MT25QL512AB
09005aef84fe19ac
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