m80188
Abstract: M80C m82c59a M80186 M80286 M8086 M8088 M80C186 M80C86 P56H
Text: M80C186 CHMOS HIGH INTEGRATION 16-BIT MICROPROCESSOR Military Y Y Y Operation Modes Include Enhanced Mode Which Has DRAM Refresh Power-Save Logic Direct Interface to New CMOS Numerics Coprocessor Compatible Mode NMOS M80186 Pin-for-Pin Replacement for Non-Numerics
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M80C186
16-BIT
M80186
M80C86
16-Bit
m80188
M80C
m82c59a
M80286
M8086
M8088
M80C186
P56H
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80C188XL25
Abstract: 8086 mnemonic arithmetic instruction code 80C186XL 80C186XL20 272431 80C186 80C186XL25 80C187 80C188 80C188XL
Text: 80C186XL 80C188XL 16-BIT HIGH-INTEGRATION EMBEDDED PROCESSORS Y Low Power Fully Static Versions of 80C186 80C188 Y Operation Modes Enhanced Mode DRAM Refresh Control Unit Power-Save Mode Direct Interface to 80C187 80C186XL Only Compatible Mode NMOS 80186 80188 Pin-for-Pin
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80C186XL
80C188XL
16-BIT
80C186
80C188
80C187
80C188XL
80C188XL25
8086 mnemonic arithmetic instruction code
80C186XL20
272431
80C186XL25
80C187
80C188
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Microprocessors
Abstract: PROCESSOR 272431 nps a14 272431-005 8086 opcode sheet add IN 80C188XL12 8088 microprocessor block diagrammed with direction 80C186 80C186XL/80C188XL
Text: 80C186XL 80C188XL 16-BIT HIGH-INTEGRATION EMBEDDED PROCESSORS Y Low Power Fully Static Versions of 80C186 80C188 Y Operation Modes Enhanced Mode DRAM Refresh Control Unit Power-Save Mode Direct Interface to 80C187 80C186XL Only Compatible Mode NMOS 80186 80188 Pin-for-Pin
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80C186XL
80C188XL
16-BIT
80C186
80C188
80C187
80C188XL
Microprocessors
PROCESSOR
272431
nps a14
272431-005
8086 opcode sheet add
IN 80C188XL12
8088 microprocessor block diagrammed with direction
80C186XL/80C188XL
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NTE2107
Abstract: No abstract text available
Text: NTE2107 Integrated Circuit NMOS, 4K Dynamic RAM DRAM Description: The NTE2107 is a 4096 word by 1 bit dynamic random access memory (RAM) that incorporates the latest memory design features and can be used in a wide variety of applications, from those which
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NTE2107
NTE2107
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272431
Abstract: IN 80C188XL12 80C186 80C186XL 80C186XL20 80C186XL25 80C187 80C188 80C188XL 80C188XL20
Text: 80C186XL 80C188XL 16-BIT HIGH-INTEGRATION EMBEDDED PROCESSORS Y Low Power Fully Static Versions of 80C186 80C188 Y Operation Modes Enhanced Mode DRAM Refresh Control Unit Power-Save Mode Direct Interface to 80C187 80C186XL Only Compatible Mode NMOS 80186 80188 Pin-for-Pin
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80C186XL
80C188XL
16-BIT
80C186
80C188
80C187
80C188XL
272431
IN 80C188XL12
80C186XL20
80C186XL25
80C187
80C188
80C188XL20
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80C186
Abstract: 80C187 M80C186 M80C186XL M80C186XL12 M80C186XL16 M80C186XL20
Text: M80C186XL20 16 12 10 16-BIT HIGH-INTEGRATION EMBEDDED PROCESSOR Y Low Power Full Static Version of M80C186 Y Operation Modes Enhanced Mode DRAM Refresh Control Unit Power-Save Mode Direct Interface to 80C187 Compatible Mode NMOS 80186 Pin-for-Pin Replacement for Non-Numerics
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M80C186XL20
16-BIT
M80C186
80C187
16-Bit
TP118
80C186
80C187
M80C186
M80C186XL
M80C186XL12
M80C186XL16
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NTE65101
Abstract: NTE21128 NTE21256 NTE8255 GJA9
Text: t* MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE8255 40-Lead DI P, See Diag. 299 NMOS, Programmable Preipheral Interface NTE21128 28-Lead DIP, See Diag. 446 NMOS, 128K EPROM, UV, 250ns NTE21256 16-Lead DIP, See Diag. 248 NMOS, 256k Dynamic RAM (DRAM), 150ns
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NTE8255
40-Lead
NTE21128
28-Lead
250ns
NTE21256
16-Lead
150ns
NTE65101
22-Lead
GJA9
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Untitled
Abstract: No abstract text available
Text: MC-41256A9 262,144 X 9-Bit Dynamic NMOS RAM Module NEC Electronics Inc. Description Pin Configuration The MC-41256A9 is a 262,144-word by 9-bit DRAM mod ule designed to operate from a single + 5-volt power supply. Advanced dynamic NMOS circuitry, Including a
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MC-41256A9
144-word
pPD41256
MC-41256A9
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a5 gnd
Abstract: NTE4164 NTE2117 NTE2164 BB 298 NTE2102 64k dynamic RAM 64k nmos static ram NTE2114 NTE2128
Text: MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE2056 16-Lead DIP, See Diag. 249 8 -B it Multiplying D/A Converter NTE2102 16-Lead DIP, See Diag. 249 NMOS, 1K Static RAM (SRAM), 350ns NTE2104 16-Lead DIP, See Diag. 249 NMOS, 4K Dynamic RAM (DRAM), 200ns
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NTE2056
16-Lead
NTE2102
350ns
NTE2104
200ns
NTE2107
22-Lead
a5 gnd
NTE4164
NTE2117
NTE2164
BB 298
64k dynamic RAM
64k nmos static ram
NTE2114
NTE2128
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NMOS DRAM
Abstract: KM4164BP KM4164 km4164b
Text: KM4164B NMOS DRAM 64K x 1 Bit Dynamic RAM with Page Mode FEATURES GENERAL DESCRIPTION • Performance range The KM4164B is a fully decoded NMOS Dynamic Ran dom Access Memory organized as 65,536 one-bit words. The design is optimized for high speed, high perfor
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KM4164B
KM4164B-10
KM4164B-12
KM4164B-15
100ns
120ns
150ns
190ns
220ns
260ns
NMOS DRAM
KM4164BP
KM4164
km4164b
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ATINY 12
Abstract: atiny ATINY 12 L 64kx4 DRAM 18-PIN 20-PIN KM41464A KM41464A-12 KM41464A-15 KM41464AJ
Text: KM41464A NMOS DRAM 6 4 K x 4 Bit Dynamic RAM with Page Mode FEATURES GENERAL DESCRIPTION The KM41464A is a fully decoded 65,536x4 NMOS Dynamic Random Access Memory. The design is optimiz ed for high speed, high performance applications such as computer memory, buffer memory, peripheral storage
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KM41464A
64Kx4
KM41464A-12
KM41464A-15
120ns
150ns
220ns
260ns
18-pin
18-lead
ATINY 12
atiny
ATINY 12 L
64kx4 DRAM
20-PIN
KM41464A
KM41464AJ
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C-41256A8
Abstract: No abstract text available
Text: M it W MC-41256A8 262,144 X 8-Bit Dynamic NMOS RAM Module NEC Electronics Inc. Description Pin Configuration The MC-41256A8 is a 262,144-word by 8 -bit NMOS RAM module designed to operate from a single + 5-volt power supply. Advanced dynamic circuitry, including a
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MC-41256A8
30-Pin
144-word
C-41256A8
/PD41256
MC-41256A8
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KM4164B-12
Abstract: samsung hv capacitor KM4164B-10 NMOS DRAM KM4164B-15 KM4164B KM4164BP KM4164 Samsung Tantalum Capacitor TCP KM4164B10
Text: KM4164B NMOS DRAM 6 4 K x 1 Bit Dynamic RAM with Page Mode FEATURES GENERAL DESCRIPTION • Performance range The KM4164B is a fully decoded NMOS Dynamic Ran dom A ccess M em ory organized as 65,536 one-bit words. The design is op tim ized fo r high speed, high pe rfor
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KM4164B
KM4164B-10
100ns
190ns
KM4164B-12
120ns
220ns
KM4164B-15
150ns
260ns
samsung hv capacitor
NMOS DRAM
KM4164B
KM4164BP
KM4164
Samsung Tantalum Capacitor TCP
KM4164B10
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AS11D
Abstract: C-41256A8 30-pin SIMM
Text: NEC MC-41256A8 262,144 X 8-Bit Dynamic NMOS RAM Module NEC Electronics Inc. Description Pin Configuration The MC-41256A8 is a 262,144-word by 8-bit NMOS RAM module designed to operate from a single + 5-volt power supply. Advanced dynamic circuitry, including a
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MC-41256A8
30-Pin
144-word
/iPD41256
MC-41256A8
83IH-6594B
AS11D
C-41256A8
30-pin SIMM
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NTE4256
Abstract: No abstract text available
Text: r MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE2732A 24-Lead DIP, See Diag. 300 NMOS, 32K EPROM, UV, 200ns NTE2764 28-Lead DIP, See Diag. 510 NMOS, 64K EPROM, 200ns VppO A? 0 ~ ^ r _ 0 vcc A6 1 2 AS AS 1 B A9 A4 § j ] A11 ^ ÖE/Vpp A3 I A2 1
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NTE2732A
24-Lead
200ns
NTE2764
28-Lead
NTE2800
14-Lead
1400-Bit
NTE4256
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mb81416
Abstract: No abstract text available
Text: F U JIT S U MOS Memories • MB81416-10, MB81416-12, MB81416-15 NMOS 65,536-Bit Dynamic Random Access Memory D escription The Fujitsu MB81416 is a fully decoded, dynam ic NMOS random access memory organized as 16384 words by 4-bits. The design is optimized for high speed, high performance applications such as
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MB81416-10,
MB81416-12,
MB81416-15
536-Bit
MB81416
18-pin
18-PAD
LCC-18C-F02)
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MB81416-12
Abstract: MB81416 mb81416-10 MB81416-15
Text: FUJITSU „ lit, M B 81416-10 M ICROELECTRONICS. INC. M B 8M16-12 " HityQLCc. MB81416-15 16,384 WORD BY 4-BIT NMOS DYNAMIC RANDOM ACCESS MEMORY PRELIMINARY DESCRIPTION The Fujitsu MB81416 is a fu lly decoded, dynam ic NMOS random access memory organized as 16384 w ords by 4-bits. The de
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MB81416-15
MB81416
18-pin
MB81416-12
mb81416-10
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Untitled
Abstract: No abstract text available
Text: NEC M C -4 1 2 5 6 A 9 2 6 2 ,1 4 4 X 9-B IT DYNAMIC NMOS RAM MODULE NEC Electronics Inc. PRELIMINARY INFORMATION Description Pin Configurations The MC-41256A9 is a 262,144-word by 9-bit NMOS dynam ic RAM module, designed to operate from a single +5 V power supply. Advanced dynamic circuitry,
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MC-41256A9
144-word
eight/jPD41256
1664B
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P041M-1S
Abstract: pd416 PD4168 AOAE p041m S200N
Text: NEC fiPD4168 8,192 X 8-BIT NMOS XRAM NEC Electronics Inc Revision 1 Description Pin Configuration The NEC^PD4168 is an 8,192 word by 8-bit NMOS XRAM designed to operate from a single +5V power supply. The NEC *<PD4168 is termed an XRAM because it Incor porates some of the best features of both SRAMs Nonmultiplexed addresses, simple interface requirements
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uPD4168
PD4168
mPD4168
PD4168
P041M-1S
pd416
AOAE
p041m
S200N
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6803 microprocessor
Abstract: 68B03 EF6803CMB 68A03 EF6803CV EF6803c EF68A03CV AN0842 ef-6800 EF6801-EF6803
Text: THOMSON COMPOSANTS MILITAIRES ET SPATIAUX EF 6803 NMOS 8-BIT MICROPROCESSOR ESCRIPTION 'he EF6803 is an 8-bit single-chip microprocessor unit MPU) which significantly enhances the capabilities of 6800 amily o f parts derived dram the 6801 microcomputer. It in
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EF6803
EF68A03JM
EF68A03CM
EF68A03EM
EF6803C
EF6803J
EF68A03C
EF68A03J
EF68B03J
RDSbfi72
6803 microprocessor
68B03
EF6803CMB
68A03
EF6803CV
EF68A03CV
AN0842
ef-6800
EF6801-EF6803
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YS18A
Abstract: MSC2305-10YS18A MSC2305
Text: OKI semiconductor MSC2305YS18A_ 524,288 BY 9 BIT DYNAMIC RAM MODULE < Page Mode Type > GENERAL DESCRIPTION The Oki MSC2305YS18A is a fully decoded, 524,288 words x 9 bit NMOS dynamic random access memory composed of eighteen 256K DRAMs in plastic leaded chip carrier MSM41256AJS .
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MSC2305YS18A_
MSC2305YS18A
MSM41256AJS)
MSC2305YS18Aare
MSM41256AJS;
MSC2305
MSC2305YS18A
18/im*
YS18A
MSC2305-10YS18A
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Untitled
Abstract: No abstract text available
Text: intei M80C186 CHMOS HIGH INTEGRATION 16-BIT MICROPROCESSOR Military I Operation Modes Include: — Enhanced Mode Which Has — DRAM Refresh — Power-Save Logic — Direct Interface to New CMOS Numerics Coprocessor — Compatible Mode — NMOS M80186 Pin for Pin
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M80C186
16-BIT
M80186
M80C86/C88
16-Bit
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Untitled
Abstract: No abstract text available
Text: PRELIM INARY a 80C188 CMOS High Integration 16-Bit Microprocessor Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • Operation Modes Include: — Enhanced mode which has • DRAM Refresh Control Unit • Power-save mode — Compatible Mode • NMOS 80188 pin-fbr-pin replacement for
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80C188
16-Bit
80C86/C88
20-MHz
80C188-20)
06753K
15590C
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OV56
Abstract: No abstract text available
Text: molaic 256k x 8 DRAM Module MD8256RKX-12/15/20 Issue 1.0: October 1988 Sem iconductor Inc. 262,144 x 8 NMOS High Speed Dynamic RAM Pin Definition Features A8 Access Times of 120/150/200 ns Power Consumption 2800mW Active 160mW Standby Industry Standard Pin Out
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MD8256RKX-12/15/20
2800mW
160mW
100fis
OV56
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