Untitled
Abstract: No abstract text available
Text: 1EZ110D5 thru 1 E Z2 0 0 D 5 Microsemi Corp. ? 7?» aoae experts SCOTTSDALE, AZ For mòTe information call: 602 941-6300 SILICON 1 WATT ZENER DIODE FEA T U R ES • Z E N E R V O LTA G E 110 V TO 200 V • W IT H S T A N D S L A R G E S U R G E S T R E S S E S
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1EZ110D5
1EZ110D5
1EZ200D5
1GZ110D5
GDD2431
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KM428C257
Abstract: XAL W6 MAS 10 RCD sc 4145 CNR 14 V 471 K CA278 CI008 On Screen Display Samsung
Text: SA M S U N G E L E C T R O N I C S INC b7E D m 7^4142 001L>bb2 17Û SMGK PRELIMINARY KM428C257 CMOS VIDEO RAM 256K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION - Dual port Architecture 2 56 K x 8 bits RAM port 512 x 8 bits SAM port The Sam sung KM 428C 257 is a C M OS 256K x 8 bit Dual
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KM428C257
256KX
512x8
110ns
130ns
150ns
110mA
100mA
40-PIN
40/44-PIN
KM428C257
XAL W6
MAS 10 RCD
sc 4145
CNR 14 V 471 K
CA278
CI008
On Screen Display Samsung
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"Video RAM"
Abstract: KM4216V256 KM4216C256
Text: KM4216C/V256 CMOS VIDEO RAM 256K X 16 Bit CMOS Video RAM FEATURES The RAM a rray consists of 512 bit rows of 8192 bits. * Dual port A rchitecture 256K x 16 bits RAM port It operates like a conventional 256K x 16 C M O S DRAM. The RAM port has a write per bit m ask capability.
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4216C/V256
110ns
130ns
150ns
KM4216C256
120mA
110mA
100mA
KM4216V256
"Video RAM"
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Untitled
Abstract: No abstract text available
Text: CMOS SUPERSYNC FIFO 16,384x9 32,768 x 9 \dt PRELIMINARY IDT72261LA IDT72271LA Integrated Device Technology, Inc. HFEATURES: • Choose among the following memory organizations: IDT72261LA 16,384 x9 IDT72271LA 32,768 x 9 • P in -co m p a tib le w ith the ID T 72V 281/72V 291 and
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384x9
IDT72261LA
IDT72271LA
IDT72271LA
281/72V
IDT72V2101/72V2111
PN64-1)
PP64-1)
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414256
Abstract: D414256 NEC 20PIN DIP
Text: NEC /¿P D 414256 2 6 2 ,1 4 4 X 4 -B IT D YN A M IC NMOS RAM NEC Electronics Inc. P R E L IM IN A R Y INFORMATION Description Pin Configurations The //PD414256 is a 262,144-word by 4-bit dynamic N-channel MOS random access memory RAM de signed to operate from a single +5 V power supply. The
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20-Pin
uPD414256
144-word
/UPD414256
414256
D414256
NEC 20PIN DIP
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Untitled
Abstract: No abstract text available
Text: S A M S U N G E L E C T R O N I C S INC b7E » • 7 ^4 1 4 5 KM536512W/WG 0 D1 5 2 1 5 54T ■ SMGK DRAM MODULES 512KX36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tR A C KMM536512W-6 60ns 15ns 110ns KMM536512W-7 70ns 20ns
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KM536512W/WG
512KX36
KMM536512W-6
110ns
130ns
KMM536512W-8
150ns
KMM536512W
KMM536512WG:
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC tiHE D m 7U4142 256Kx4 Bit CMOS VIDEO RAM FEATURES • Dual Port Architecture 256K x 4 bits RAM port 512 x 4 bits SAM port • Performance range: -8 Item • • • • • • • • • • • • -10 80ns 1 0 0 ns access time t R A c
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7U4142
256Kx4
150ns
180ns
28-PIN
KM424C256
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY KM428C256 CMOS VIDEO RAM 25 6K x8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual Port Architecture 256K X 8 bits RAM port 512 X 8 bits SAM port • Performance range: The Samsung KM428C256 is a CMOS 2 5 6 K x8 bit Dual Port DRAM. It consists of a 256K x 8 dynamic ran
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KM428C256
KM428C256
40-PIN
40/44-PIN
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Untitled
Abstract: No abstract text available
Text: CMOS VIDEO RAM KM424C256A 256KX4 Bit CMOS VIDEO RAM FEATURES • Dual Port Architecture 256K x 4 bits RAM port S12 x 4 bits SAM port • Performance range: Item RAM RAM RAM RAM SAM SAM RAM SAM RAM • • • • • • • • • • • • access time tRAc
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KM424C256A
256KX4
125ns
150ns
100ns
180ns
28-PIN
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KM424C256
Abstract: No abstract text available
Text: KM424C256 CMOS VIDEO RAM GENERAL DESCRIPTION 256Kx4 Bit CMOS VIDEO RAM FEATURES • Dual Port Architecture 256K x 4 bits RAM port 512 x 4 bits SAM port • Performance range: Item RAM RAM RAM ¡RAM SAM SAM RAM SAM ¡RAM • • • • • • • • •
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KM424C256
256Kx4
100ns
120ns
150ns
180ns
220ns
28-PIN
KM424C256
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b4E 3 • 7 ^ 4 1 4 2 DDIBTTB TSG PRELIMINARY KM424C257 SMGK CMOS VIDEO RAM 2 5 6 K X 4 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port A rchitecture 256K x 4 b its RAM port 512 x 4 b its SAM port • Performance The Samsung KM 424C 257 is a CMOS 2 5 6 K X 4 bit Dual
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KM424C257
125ns
28-PIN
0D13625
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KMM536256
Abstract: No abstract text available
Text: KMM536256B DRAM MODULES 2 5 6 K X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 536256B is a 2 6 2 ,1 4 4 bit X 36 Dynamic RAM high density memory module. The Sam sung KM M 536256B consist ot eight CMOS 2 5 6 K X 4
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KMM536256B
536256B
20-pin
18-pin
72-pin
536256B-
130ns
KMM536256
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km418c256
Abstract: No abstract text available
Text: KM418C256/USL CMOS DRAM 2 5 6 K x 18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM418C256/L/SL is a CMOS high speed 262,144 bit x 18 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM418C256/USL
KM418C256/L/SL
KM418C256/L/SL-7
130ns
KM418C256/Ã
150ns
KM418C256/L/SL-10
100ns
180ns
KM418C256/L/SL
km418c256
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Untitled
Abstract: No abstract text available
Text: hay a » 9a KM424C256 CMOS VIDEO RAM 256KX4 Bit CMOS VIDEO RAM GENERAL DESCRIPTION FEATURES The Samsung KM424C256 is a CMOS 2 5 6 K x 4 bit Dual Port DRAM. It consists of a 256K x 4 dynamic ran dom access memory RAM port and 512 x 4 static serial access memory (SAM) port. The RAM and SAM ports
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KM424C256
256KX4
KM424C256
28-PIN
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s23a4
Abstract: M5M4V18-60B8 M5M4V18
Text: M 5 M 4 V 1 8 1 6 0 B J ,T P ,R T - 6 , - 7 ,- 8 , - 6 S v 7 S ,- 8 S FAST PAGE MODE 16777216-BIT 1048576-WQRD BY 16-BIT DYNAMiC RAM DESCRIPTION This is a family of 1048576-w ord by 16-bit dynamic RAMS, fabricated with the high performance CM OS process,and is ideal for
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16777216-BIT
1048576-WQRD
16-BIT
1048576-w
1048576-WORD
16-BIT
M5M4V18160BJ
s23a4
M5M4V18-60B8
M5M4V18
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Untitled
Abstract: No abstract text available
Text: o orkVU . rkr'v P R O G R A M M A B L E OEi AY CH!f- SYN ER G Y ' -•V 1 f i t 1 yB Wi TH A N A L O G I N R I T V 1 0 0 E Î9 B S E M IC O N D U C I O R FEATURES ■ Up to 2ns delay range ■ Extended 100E V ee range of -4 .2 V to -5 .5 V ■ »20ps digital step resolution
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75Kki2
C10E/100E196
28-pin
0/100E
SY10E196JC
SY10E196JCTR
SY100E196JC
SY100E196JCTR
J28-1
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tda 10W amplifier tone volume control
Abstract: tda1110 Vsb24V TDA1910 tda 2200 TDA191 TDA 820 m 24v AUDIO AMPLIFIER CIRCUIT DIAGRAM tda111 simple 19v power supply
Text: Æ * T 7M b S G S -T H O M S O N TD A 1910 K iö D l^ © [ it [ i© ir [ ^ Q R ilQ © i 10W AUDIO AMPLIFIER WITH MUTING DESCRIPTION The TDA 1910 is a monolithic integrated circuit in MULTIWATT package, intended for use in Hi-Fi audio power applications, as high quality TV sets.
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TDA1910
tda 10W amplifier tone volume control
tda1110
Vsb24V
TDA1910
tda 2200
TDA191
TDA 820 m
24v AUDIO AMPLIFIER CIRCUIT DIAGRAM
tda111
simple 19v power supply
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Untitled
Abstract: No abstract text available
Text: 1080 Johnson Drive Buffalo Grove, IL 60089 C h ic a g o M in ia tu re 708-459*3400 Fax 708-459-2708 WHERE INNOVATION COM ES TO L IG H T 5 4 7 S e rie s T-3/ 4 L E D C ir c u it B o a rd In d ic a to rs D E S C R I P T I O N A N D F E A T U R E S SolidState
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LC7560
Abstract: sanyo lc7560 lc7520 7-band graphic equalizer spectrum LC 7522 sanyo QIP80A 7-band lc7522 mos 3021 H272
Text: SANYO SEMICONDUCTOR CORP 32E D H 7^70713 QGOñlüñ fl El • T - 7 9 ' O S - O Ì l l i l l i i S V ^ < 3057 C M O S LSI G r a p h i c E q u a l i z e r L C D D r i v e r Use LCD driver for display of graphic equalizers LC7520, 7522, 7523, Features 1 7-band display (+ accessory display or total display) : 11 x 8 segments.
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1891B
LC7520,
11-dot
QIP48A
00077b3
-29-M
DIP-24Slim
DIP28SN
QIP48B
DIP24S
LC7560
sanyo lc7560
lc7520
7-band graphic equalizer spectrum
LC 7522 sanyo
QIP80A
7-band
lc7522
mos 3021
H272
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KONY
Abstract: NAD 140 TNR*G cemi data axc0 poaem 6880n
Text: ¡fffiUlMITRn tsal C E M I MCY 7880N M CY 6880N Podstawowe oaohy oharakterystyczne ukiadu MCY 7880H /MCT 6880N/I - 8-bitowe siowo danyoh; - Staia lista 78 inetrukoji; - Odrgbne szyny danyoh i adresöw; - 8-bitowa Jednostka arytmetyozno-logiczna /AID/ z mo£liwo£oiq praoy w eystemie BCD,wsystemie binarnyn na slowaoh podwöjnej diugogol;
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7880H
6880N/I
16-bitowy
KONY
NAD 140
TNR*G
cemi data
axc0
poaem
6880n
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Untitled
Abstract: No abstract text available
Text: ASÍ} AUSTIN SEMICONDUCTOR, INC. A¿ í£ 1259 3íí 256K X 1 DRAM 256K X 1 DRAM DRAM FAST PAG E MODE AVAILABLE AS M ILITARY SPE C IFIC A TIO N S PIN ASSIGNMENT Top View • MIL-STD-883 18-Pin LCC 16-Pin DIP (D-2) FEATURES • Industry standard pinout and timing
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MIL-STD-883
18-Pin
16-Pin
150mW
256-cycle
AS4C125S683C
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Untitled
Abstract: No abstract text available
Text: xhe Commercial Industrial 4K X2004 X2004I 512x8 Bit Nonvolatile Static RAM is fabricated with the same reliable N-channel floating gate MOS technology used in all Xicor 5V programma ble nonvolatile memories. The X2004 features the JEDEC approved pinout for byte-wide memories, com
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X2004
X2004I
512x8
X2004
X2004,
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSI* M 5 M 4 V 1 8 1 6 0 B T P - 6 ,- 7 ,- 6 S , - 7 S FAST PAGE MODE 16777216-BIT 1D48576-WORD BY 16-BIT DYNAMIC RAM DESCRIPTION This Is a family of 1048576-w ord by 16-bit dynamic RAM S, fabricated with the high performance CMOS process.and is Ideal for
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16777216-BIT
1D48576-WORD
16-BIT
1048576-w
16-bit
1048576-WORD
M5M4V18160BTP-6
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UTP HA3
Abstract: No abstract text available
Text: MITSUBISHI LSIs M 5 M 4 1 8 1 2 5 A J - 5 , - 6 , - 7 , - 5 S , - 6 S , - 7 S HYPER PAGE MODE 1048576-BIT 131072-WQRP BY 8-BIT DYNAMIC RAM DESCRIPTION This is a family of 131072-word by 8-bit dynamic RAMs, fabricated with a high performance CMOS process, and is ideal for largecapacity memory systems where high speed, low power
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1048576-BIT
131072-WQRP
131072-word
12/8m
UTP HA3
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