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    onsemi NGD8205NT4

    IGBT 390V 20A DPAK
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    DigiKey NGD8205NT4 Reel 2,500
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    Rochester Electronics NGD8205NT4 2,480 1
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    ComSIT USA NGD8205NT4 495
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    Rochester Electronics LLC NGD8205NT4

    IGBT 390V 20A DPAK
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    DigiKey NGD8205NT4 Bulk 296
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    onsemi NGD8205NT4G

    IGBT 390V 20A DPAK
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    DigiKey NGD8205NT4G Reel 2,500
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    Rochester Electronics NGD8205NT4G 87,296 1
    • 1 $0.9751
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    ComSIT USA NGD8205NT4G 250
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    Rochester Electronics LLC NGD8205NT4G

    IGBT 390V 20A DPAK
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    DigiKey NGD8205NT4G Bulk 296
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    NGD8205N Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NGD8205N On Semiconductor Ignition IGBT 20 A, 350 V, N-Channel DPAK Original PDF
    NGD8205NT4 On Semiconductor Ignition IGBT 20 a, 350 V, N-Channel DPAK; Package: DPAK 4 LEAD Single Gauge Surface Mount; No of Pins: 4; Container: Tape and Reel; Qty per Container: 2500 Original PDF
    NGD8205NT4 On Semiconductor Ignition IGBT 20 A, 350 V, N-Channel DPAK Original PDF
    NGD8205NT4 On Semiconductor IGBT Transistor, 20 A, 350 V, N-Channel, Tape and Reel Original PDF
    NGD8205NT4G On Semiconductor TRANS IGBT CHIP N-CH 390V 20A 3DPAK T/R Original PDF

    NGD8205N Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    8205NG

    Abstract: NGD 8205NG NGD8205N NGD8205NT4 NGD8205NT4G
    Text: NGD8205N Ignition IGBT 20 Amp, 350 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


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    NGD8205N NGD8205N/D 8205NG NGD 8205NG NGD8205N NGD8205NT4 NGD8205NT4G PDF

    Untitled

    Abstract: No abstract text available
    Text: NGD8205N Ignition IGBT 20 A, 350 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and


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    NGD8205N NGD8205N/D PDF

    8205N

    Abstract: NGD8205N NGD8205NT4
    Text: NGD8205N Ignition IGBT 20 A, 350 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses


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    NGD8205N NGD8205N/D 8205N NGD8205N NGD8205NT4 PDF

    Untitled

    Abstract: No abstract text available
    Text: NGD8205N, NGD8205AN Ignition IGBT 20 Amp, 350 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


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    NGD8205N, NGD8205AN NGD8205N/D PDF

    8205N

    Abstract: 8205 NGD8205N NGD8205NT4 0000001D
    Text: NGD8205N Ignition IGBT 20 A, 350 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original
    NGD8205N NGD8205N/D 8205N 8205 NGD8205N NGD8205NT4 0000001D PDF

    NGD8205NT4G

    Abstract: No abstract text available
    Text: NGD8205N, NGD8205AN Ignition IGBT 20 Amp, 350 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


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    NGD8205N, NGD8205AN NGD8205N/D NGD8205NT4G PDF

    NGD8205AN

    Abstract: NGD8205A
    Text: NGD8205N, NGD8205AN Ignition IGBT 20 Amp, 350 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


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    NGD8205N, NGD8205AN NGD8205N/D NGD8205A PDF

    8205N

    Abstract: ignition IGBT
    Text: NGD8205N Ignition IGBT 20 A, 350 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses


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    NGD8205N 8205N ignition IGBT PDF

    NGD 8205NG

    Abstract: 8205NG NGD8205N NGD8205NT4 NGD8205NT4G
    Text: NGD8205N Ignition IGBT 20 Amp, 350 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original
    NGD8205N NGD8205N/D NGD 8205NG 8205NG NGD8205N NGD8205NT4 NGD8205NT4G PDF

    dpak 369C

    Abstract: No abstract text available
    Text: NGD8205N Ignition IGBT 20 A, 350 V, N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and


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    NGD8205N NGD8205N/D dpak 369C PDF

    BS170 116

    Abstract: NTZD3155CT1G NTD18N06 NID5001 NUD3124LT1G NTD30N02 NTZD3155CT5G ntr4503nt1 NTMS4700NR2
    Text: Data Sheet Page Data Sheet Page Data Sheet Page 2N7000 17, 26 MMBF170LT3 12, 95 NTA4001NT1 11, 259 2N7000RLRA 17, 26 MMBF170LT3 12, 95 NTA4151PT1 11, 263 2N7000RLRM 17, 26 MMBF2201NT 11, 98 NTA4153NT1 11, 268 2N7000RLRP 17, 26 MMBF2202PT1 11, 102 NTB125N02R


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    2N7000 2N7000RLRA 2N7000RLRM 2N7000RLRP 2N7000ZL1 2N7002L 2N7002LT1 2N7002LT3 BS107 BS107A BS170 116 NTZD3155CT1G NTD18N06 NID5001 NUD3124LT1G NTD30N02 NTZD3155CT5G ntr4503nt1 NTMS4700NR2 PDF

    ignition IGBT

    Abstract: No abstract text available
    Text: ON Semiconductor Selector Guide − Power MOSFET Products Ignition IGBT − Insulated Gate Bipolar Transistors VCE on (V) VGE = 4.0 V IC = 6.0 A VGE = 4.5 V IC = 10 A Min Energy Ratings Clamp Voltage Switching Speed (IC = 6.5 A) EAS (mJ) VCES (V) Resistive


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    O-252) NGD8201NT4 NGD8205NT4 NGD18N40CLBT4 NGD15N41CLT4 O-264) NGB8202NT4 NGB8206NT4 NGB18N40CLBT4 ignition IGBT PDF

    NTP2955G

    Abstract: m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G
    Text: 5V ±3% 80 mA 0.8 V — 6 mA 1 mA CS8101 5V ±2% 100 mA 0.6 V 50 mA 140 mA (100 mA) CS8151 5V ±2% 100 mA 0.6 V — 750 mA (200 mA) CS8221 5V ±2% 100 mA 0.6 V — NCV317L Adj ±4% 100 mA 1.9 V (Typ) — Overvoltage Current Limit Wakeup l Overtemperature


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    CS8101 CS8151 CS8221 NCV317L NCV553 SC-82 SOIC-20 SGD516/D NTP2955G m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G PDF

    MOSFET P-channel SOT-23

    Abstract: NTD80N02 NTD18N06 NTMS3P03R2 MLD1N06CL NTHD5904N
    Text: Power MOSFET Numeric Data Sheet Listing Chapter 1: Power MOSFET Data Sheets Device Function Page 2N7000 . . . . . . . . . . . . . . . . . . . . . Small Signal MOSFET 200 mAmps, 60 Volts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26


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    2N7000 2N7002L MOSFET60 OT-23 BS107, BS107A BS108 BS170 NUD3124 NUD3160 MOSFET P-channel SOT-23 NTD80N02 NTD18N06 NTMS3P03R2 MLD1N06CL NTHD5904N PDF

    2N6284 inverter schematic diagram

    Abstract: NTD18N06 MKP9V160 sine wave inverter tl494 circuit diagram ECL IC NAND adp3121 DARLINGTON TRANSISTOR ARRAY ezairo MC74HC4538 TIP142 6403 F
    Text: ON Semiconductor Master Components Selector Guide AC−DC Controllers and Regulators; Amplifiers and Comparators; Analog Switches; Bipolar Transistors; Clock and Data Distribution; Clock Generation; Custom; DC−DC Controllers, Converters, and Regulators; Digital


    Original
    SG388/D 2N6284 inverter schematic diagram NTD18N06 MKP9V160 sine wave inverter tl494 circuit diagram ECL IC NAND adp3121 DARLINGTON TRANSISTOR ARRAY ezairo MC74HC4538 TIP142 6403 F PDF