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    NGB8202NT4 Search Results

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    NGB8202NT4 Price and Stock

    Rochester Electronics LLC NGB8202NT4G

    IGBT 440V 20A D2PAK
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    DigiKey NGB8202NT4G Bulk 5,057 254
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    • 1000 $1.19
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    Rochester Electronics LLC NGB8202NT4

    IGBT 440V 20A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NGB8202NT4 Bulk 800 254
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    onsemi NGB8202NT4

    IGBT 440V 20A 150W D2PAK
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    DigiKey NGB8202NT4 Reel
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    Avnet Americas NGB8202NT4 Reel 4 Weeks 306
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    Newark NGB8202NT4 Bulk 310
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    Rochester Electronics NGB8202NT4 800 1
    • 1 $1.19
    • 10 $1.19
    • 100 $1.12
    • 1000 $1.02
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    onsemi NGB8202NT4G

    IGBT 440V 20A 150W D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NGB8202NT4G Reel 800
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    • 1000 $1.36653
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    Avnet Americas NGB8202NT4G Reel 4 Weeks 306
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.14674
    • 10000 $1.08121
    		Buy Now
    Rochester Electronics NGB8202NT4G 5,057 1
    • 1 $1.19
    • 10 $1.19
    • 100 $1.12
    • 1000 $1.02
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    EBV Elektronik NGB8202NT4G 26 Weeks 800
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    NGB8202NT4 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    NGB8202NT4 On Semiconductor IGBT Chip, N Channel, 440V, D2PAK, 4-Pin Original PDF
    NGB8202NT4 On Semiconductor Ignition IGBT 20 A, 400 V, N-Channel D2PAK; Package: D2PAK 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 800 Original PDF
    NGB8202NT4 On Semiconductor Ignition IGBT 20 A, 400 V, N-Channel D2PAK Original PDF
    NGB8202NT4G On Semiconductor TRANS IGBT CHIP N-CH 440V 20A 3D2PAK T/R Original PDF
    NGB8202NT4G On Semiconductor NGB8202 - TRANSISTOR 20 A, 440 V, N-CHANNEL IGBT, LEAD FREE, CASE 418B-04, D2PAK-3, Insulated Gate BIP Transistor Original PDF

    NGB8202NT4 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GB8202NG

    Abstract: 8202NG NGB8202NT4G NGB8202N NGB8202NT4
    Text: NGB8202N Ignition IGBT 20 A, 400 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and


    Original     		PDF NGB8202N NGB8202N/D GB8202NG 8202NG NGB8202NT4G NGB8202N NGB8202NT4

    BS170 116

    Abstract: NTZD3155CT1G NTD18N06 NID5001 NUD3124LT1G NTD30N02 NTZD3155CT5G ntr4503nt1 NTMS4700NR2
    Text: Data Sheet Page Data Sheet Page Data Sheet Page 2N7000 17, 26 MMBF170LT3 12, 95 NTA4001NT1 11, 259 2N7000RLRA 17, 26 MMBF170LT3 12, 95 NTA4151PT1 11, 263 2N7000RLRM 17, 26 MMBF2201NT 11, 98 NTA4153NT1 11, 268 2N7000RLRP 17, 26 MMBF2202PT1 11, 102 NTB125N02R


    Original     		PDF 2N7000 2N7000RLRA 2N7000RLRM 2N7000RLRP 2N7000ZL1 2N7002L 2N7002LT1 2N7002LT3 BS107 BS107A BS170 116 NTZD3155CT1G NTD18N06 NID5001 NUD3124LT1G NTD30N02 NTZD3155CT5G ntr4503nt1 NTMS4700NR2

    ignition IGBT

    Abstract: No abstract text available
    Text: ON Semiconductor Selector Guide − Power MOSFET Products Ignition IGBT − Insulated Gate Bipolar Transistors VCE on (V) VGE = 4.0 V IC = 6.0 A VGE = 4.5 V IC = 10 A Min Energy Ratings Clamp Voltage Switching Speed (IC = 6.5 A) EAS (mJ) VCES (V) Resistive


    Original     		PDF O-252) NGD8201NT4 NGD8205NT4 NGD18N40CLBT4 NGD15N41CLT4 O-264) NGB8202NT4 NGB8206NT4 NGB18N40CLBT4 ignition IGBT

    B820

    Abstract: 20A400 B8202 B8202N
    Text: NGB8202N Ignition IGBT 20 A, 400 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and


    Original     		PDF NGB8202N NGB8202N/D B820 20A400 B8202 B8202N

    B8202

    Abstract: NGB8202N NGB8202NT4 B8202N 20A400
    Text: NGB8202N Ignition IGBT 20 A, 400 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and


    Original     		PDF NGB8202N NGB8202N/D B8202 NGB8202N NGB8202NT4 B8202N 20A400

    NTP2955G

    Abstract: m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G
    Text: 5V ±3% 80 mA 0.8 V — 6 mA 1 mA CS8101 5V ±2% 100 mA 0.6 V 50 mA 140 mA (100 mA) CS8151 5V ±2% 100 mA 0.6 V — 750 mA (200 mA) CS8221 5V ±2% 100 mA 0.6 V — NCV317L Adj ±4% 100 mA 1.9 V (Typ) — Overvoltage Current Limit Wakeup l Overtemperature


    Original     		PDF CS8101 CS8151 CS8221 NCV317L NCV553 SC-82 SOIC-20 SGD516/D NTP2955G m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G

    1500w audio amplifier circuit

    Abstract: Schottky Diode 80V 6A 1500w PWM 220v C106MG marking code SS SOT23 tl494cn inverter datasheet smps 1500W MMSZ5231BT1G dc 220v motor speed control circuit with scr NCP1200P60G
    Text: SGD501/D REV 19, October 9, 2004 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION − Please see General Information Section EFFECTIVE DATE: OCTOBER 9, 2004  General Information ON Semiconductor Standard Policies


    Original     		PDF SGD501/D 74VCX16373DT 74VCX16373DTR 74VCX16374DT 16BIT 74VCX16374DTR 80SQ045N 80SQ045NRL 1500w audio amplifier circuit Schottky Diode 80V 6A 1500w PWM 220v C106MG marking code SS SOT23 tl494cn inverter datasheet smps 1500W MMSZ5231BT1G dc 220v motor speed control circuit with scr NCP1200P60G

    B8202

    Abstract: 50VPK ignition coil drivers B8-202
    Text: NGB8202N Ignition IGBT 20 A, 400 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and


    Original     		PDF NGB8202N NGB8202N/D B8202 50VPK ignition coil drivers B8-202

    B8202NG

    Abstract: NGB8202NG B8202 NGB8202NT4G B8-202
    Text: NGB8202N Ignition IGBT 20 A, 400 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and


    Original     		PDF NGB8202N NGB8202N/D B8202NG NGB8202NG B8202 NGB8202NT4G B8-202

    NGB8202NT4G

    Abstract: NGB8202AN NGB8202ANT4G NGB8202N NGB8202A
    Text: NGB8202N, NGB8202AN Ignition IGBT 20 A, 400 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGB8202N, NGB8202AN NGB8202N/D NGB8202NT4G NGB8202AN NGB8202ANT4G NGB8202N NGB8202A

    B8202N

    Abstract: B8202 B8-202 Direct fuel injection ignition IGBT GB8202N
    Text: NGB8202N Ignition IGBT 20 A, 400 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGB8202N B8202N B8202 B8-202 Direct fuel injection ignition IGBT GB8202N

    Untitled

    Abstract: No abstract text available
    Text: NGB8202N, NGB8202AN Ignition IGBT 20 A, 400 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGB8202N, NGB8202AN NGB8202N/D

    B8202

    Abstract: b820 NGB8202N NGB8202NT4
    Text: NGB8202N Ignition IGBT 20 A, 400 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGB8202N NGB8202N/D B8202 b820 NGB8202N NGB8202NT4

    NGB8202N

    Abstract: 75A60
    Text: NGB8202N, NGB8202AN Ignition IGBT 20 A, 400 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original     		PDF NGB8202N, NGB8202AN NGB8202N/D NGB8202N 75A60