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    Banner Engineering Corp ESL-41/60-ENES-10

    EMERGENCY STOP LEGEND LABEL (ADH
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    DigiKey ESL-41/60-ENES-10 Box 50 1
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    Mouser Electronics ESL-41/60-ENES-10
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    Neutron USA ESL-41/60-ENES-10 50
    • 1 $89.99
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    NetPower Technologies Inc NES1000N30S05

    DC DC CONVERTER 0.75-5.5V
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    DigiKey NES1000N30S05 Tray 38 1
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    Mean Well NES-15-15

    AC/DC CONVERTER 15V 15W
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    DigiKey NES-15-15 Box 240
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    Onlinecomponents.com NES-15-15
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    TDK-Lambda Corporation NES120-24

    AC/DC DIN RAIL SUPPLY 24V 120W
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    Mean Well NES-100-9

    AC/DC CONVERTER 9V 101W
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    DigiKey NES-100-9 Box 200
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    NES1 Datasheets (70)

    Part ECAD Model Manufacturer Description Curated Type PDF
    NES-100-12 MEAN WELL USA Power Supplies - External/Internal (Off-Board) - AC DC Converters - AC/DC CONVERTER 12V 102W Original PDF
    NES-100-15 Mean Well PWR SPLY,SW,ENCL,105W, 15V@7A,UL/CUL/CE Original PDF
    NES-100-24 MEAN WELL USA Power Supplies - External/Internal (Off-Board) - AC DC Converters - AC/DC CONVERTER 24V 108W Original PDF
    NES-100-48 MEAN WELL USA Power Supplies - External/Internal (Off-Board) - AC DC Converters - AC/DC CONVERTER 48V 110W Original PDF
    NES-100-5 MEAN WELL USA Power Supplies - External/Internal (Off-Board) - AC DC Converters - AC/DC CONVERTER 5V 100W Original PDF
    NES-100-7.5 MEAN WELL USA Power Supplies - External/Internal (Off-Board) - AC DC Converters - AC/DC CONVERTER 7.5V 102W Original PDF
    NES-100-9 MEAN WELL USA Power Supplies - External/Internal (Off-Board) - AC DC Converters - AC/DC CONVERTER 9V 101W Original PDF
    NES1085 New England Semiconductor LOW DROPOUT VOLTAGE REGULATOR Scan PDF
    NES1086 New England Semiconductor LOW DROPOUT VOLTAGE REGULATOR Scan PDF
    NES120 Densei-Lambda DIN rail mountable type 30 ~ 240W Original PDF
    NES120-24 Densei-Lambda DIN rail mountable type 30 ~ 240W Original PDF
    NES120-24 Lambda Electronics Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Industrial DIN Rail Power Supply, 24V Output, 120W Scan PDF
    NES130/5 New England Semiconductor POWER MOSFET N CHANNEL Scan PDF
    NES130-5 New England Semiconductor TRANS MOSFET N-CH 100V 8A 3TO-5 Scan PDF
    NES130/59 New England Semiconductor POWER MOSFET N CHANNEL Scan PDF
    NES130-59 New England Semiconductor TRANS MOSFET N-CH 100V 14A 2TO-59 Scan PDF
    NES137 New England Semiconductor LINEAR VOLTAGE REGULATOR Scan PDF
    NES13DB24DA Carlo Gavazzi E-stop & Safety Gate Modules Original PDF
    NES13DB24DC Carlo Gavazzi E-stop & Safety Gate Modules Original PDF
    NES13DB24SA Carlo Gavazzi E-stop & Safety Gate Modules Original PDF

    NES1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Safety Modules

    Abstract: NES13D marking s34 NES02D EN1088 S11-S12 b24s en 60204-1
    Text: Safety Modules Emergency Stop and Safety Gate Types NES02D, NES13D • • • • • • • • • • Screw, fixed Safety Category 4 according to EN 954-1 Category 0 Emergency Stop EN 60204-1 2 x 6 A NO safety outputs (NES02D) 3 x 6 A NO safety outputs and 1 x 6 A NC auxiliary output (NES13D)


    Original     		PDF NES02D, NES13D NES02D) NES13D) EN1088. NES02D. NES13D. Safety Modules NES13D marking s34 NES02D EN1088 S11-S12 b24s en 60204-1

    8712 RESISTOR

    Abstract: NES1823M-180
    Text: DATA SHEET GaAs FET NES1823M-180 180 W L, S-BAND PUSH-PULL POWER GaAs FET DESCRIPTION The NES1823M-180 is a 180 W push-pull type GaAs FET designed for high power transmitter applications for IMT2000 base station systems. It is capable of delivering 180 W of output power CW with high linear gain, high


    Original     		PDF NES1823M-180 NES1823M-180 IMT2000 8712 RESISTOR

    IEC-1000-4-3

    Abstract: NES240-24 NES240-48 NES60-24 neS-240-48 NES120 NES120-24 NES240 IEC1000-4-3
    Text: NES SERIES DIN RAIL MOUNTED SWITCHED MODE 60-240W SINGLE OUTPUT F E AT U R E S • Universal input ■ PFC as standard on NES 120, 240 ■ Low profile ■ Output good LED ■ Convection cooled DIN ELECTRICAL SPECIFICATION Model No. Max Power NES60-24 NES120-24


    Original     		PDF 0-240W NES60-24 NES120-24 NES240-24 NES240-48 IEC1000-4-3, VDE0160 NES60 NES120 NES240 IEC-1000-4-3 NES240-24 NES240-48 NES60-24 neS-240-48 NES120 NES120-24 NES240 IEC1000-4-3

    NES1823S-90

    Abstract: No abstract text available
    Text: DATA SHEET GaAs FET NES1823S-90 90 W L, S-BAND SINGLE-END POWER GaAs FET DESCRIPTION The NES1823S-90 is a 90 W single-end type GaAs FET designed for high power transmitter applications for IMT2000 base station systems. It is capable of delivering 90 W of output power CW with high linear gain, high efficiency


    Original     		PDF NES1823S-90 NES1823S-90 IMT2000

    nec 0882

    Abstract: transistor NEC D 882 p nec d 882 p datasheet nec d 882 p NES1823P-45 1658 NEC
    Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NES1823P-45 45 W L, S-BAND PUSH-PULL POWER GaAs MES FET DESCRIPTION The NES1823P-45 is a 45 W push-pull type GaAs MES FET designed for high power transmitter applications for PCS, DCS, PHS and IMT2000 base station systems. It is capable of delivering 45 W of output power CW with high


    Original     		PDF NES1823P-45 NES1823P-45 IMT2000 nec 0882 transistor NEC D 882 p nec d 882 p datasheet nec d 882 p 1658 NEC

    gaas fet T79

    Abstract: NES1821B-30
    Text: PRELIMINARY DATA SHEET 30 W L-BAND NES1821B-30 POWER GaAs MESFET OUTLINE DIMENSIONS Units in mm FEATURES • CLASS A OR AB OPERATION PACKAGE OUTLINE T-79 • HIGH OUTPUT POWER • HIGH GAIN 24±0.2 20.4±0.15 • HIGH POWER ADDED EFFICIENCY 1.0±0.1 GATE


    Original     		PDF NES1821B-30 NES1821B-30 24-Hour gaas fet T79

    NES1417B-30

    Abstract: nec 1441
    Text: DATA SHEET PRELIMINARY DATA SHEET GaAs MES FET NES1417B-30 30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The NES1417B-30 is power GaAs FET which provides high output power and high gain in the 1.4-1.7GHz 24±0.3


    Original     		PDF NES1417B-30 NES1417B-30 nec 1441

    AN1032

    Abstract: NES1823P-70
    Text: PRELIMINARY DATA SHEET 70W L-S BAND TWIN POWER GaAs MESFET FEATURES NES1823P-70 OUTLINE DIMENSIONS Units in mm • • HIGH OUTPUT POWER: 70 W TYP HIGH POWER ADDED EFFICIENCY: 40 % TYP • HIGH LINEAR GAIN: 11 dB TYP at 2.2 GHz PACKAGE OUTLINE T-86 45°


    Original     		PDF NES1823P-70 NES1823P-70 IMT2000 24-Hour AN1032

    NES1821P-50

    Abstract: D2010
    Text: 50W L-BAND PUSH-PULL POWER GaAs MESFET FEATURES • • NES1821P-50 OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 50 W TYP HIGH DRAIN EFFICIENCY: 52 % TYP @ VDS = 10 V, ID = 2 A, f = 1.96 GHz HIGH LINEAR GAIN: 10.5 dB TYP • PUSH-PULL CONFIGURATION


    Original     		PDF NES1821P-50 NES1821P-50 24-Hour D2010

    K 1358 fet transistor

    Abstract: AN1032 NES1720P-140
    Text: PRELIMINARY DATA SHEET 140 W L-BAND TWIN POWER GaAs MESFET NES1720P-140 OUTLINE DIMENSIONS Units in mm FEATURES • • • • HIGH OUTPUT POWER: 140 W TYP HIGH LINEAR GAIN: 11 dB TYP HIGH EFFICIENCY: 42% TYP USABLE IN BALANCED OR PUSH-PULL CONFIGURATION.


    Original     		PDF NES1720P-140 NES1720P-140 24-Hour K 1358 fet transistor AN1032

    NES1823M-45

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET GaAs FET NES1823M-45 45 W L, S-BAND PUSH-PULL POWER GaAs FET DESCRIPTION The NES1823M-45 is a 45 W push-pull type GaAs FET designed for high power transmitter applications for IMT2000, PCS, and PDC base station systems. It is capable of delivering 45 W of output power CW with high linear


    Original     		PDF NES1823M-45 NES1823M-45 IMT2000,

    imt 901

    Abstract: nec k 813 NES1823P-30
    Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NES1823P-30 30 W L-S BAND PUSH-PULL POWER GaAs MES FET DESCRIPTION The NES1823P-30 is a 30 W push-pull type GaAs MES FET designed for high power transmitter applications for PCS, DCS and IMT 2000 base station systems. It is capable of delivering 30 watts of output power CW with high linear


    Original     		PDF NES1823P-30 NES1823P-30 imt 901 nec k 813

    GaAs MESFET

    Abstract: NES2527B-30 MESFET NE6500278 NEL2000 NES1821B-50 NEZ1011 NEZ1414 NEZ5964
    Text: Power NEW! NES2527B-30 GaAs MESFET • 30 Watts POUT, 13.0 dB Gain • 2.1–2.7GHz Wideband Operation PCS and Cellular Base Station NEW! NES1821B-50 GaAs MESFET Wireless Local Loop and Wireless Cable MMDS • 47.0 dBm POUT @ 1.9GHz • 11.0 dB Linear Gain


    Original     		PDF NES2527B-30 NES1821B-50 NE6500278 33dBm NE650 NEL2000 NEZ5964 NE850 GaAs MESFET MESFET NEZ1011 NEZ1414

    POUT36

    Abstract: NES1821B-30 p1209
    Text: DATA SHEET PRELIMINARY DATA SHEET GaAs MES FET NES1821B-30 30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The NES1821B-30 is power GaAs FET which provides high output power and high gain in the 1.8-2.1 GHz 24±0.3


    Original     		PDF NES1821B-30 NES1821B-30 POUT36 p1209

    NES1085

    Abstract: NSG2591 NSG259J NES1
    Text: NES1085 ^1 P *NEW ENGLAND SEMICONDUCTOR LOW DROPOUT VOLTAGE REGULATORS • • • • • • IV Dropout, 1.5V @ Max C urrent 0.01% Load Regulation 0.015% Line Regulation 1% Reference Voltage H ermetic TO-254Z Pak O utput C u rren t 3.0A 3 TERM IN AL PO SITIV E


    OCR Scan     		PDF NES1085 O-254Z NES1085. NSG2591) XM46-1158 NES1085 NSG2591 NSG259J NES1

    Untitled

    Abstract: No abstract text available
    Text: Back to FETs 0 /V E F ^ IP NES130/5 NEW ENGLAND SEMICONDUCTOR POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW R DS 0 n • LOW DRIVE REQUIREM ENT • DYNAMIC d v / d t RATING ABSOLUTE MAXIMUM RATINGS (Tc - 25°C unless otherwise noted) PARAMETERS / TEST CONDITIONS


    OCR Scan     		PDF NES130/5

    MESFET S parameter data sheet

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs MESFET NES1823P-100 100W L-BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1823P-100 is a 100 W push-pull type GaAs MESFET designed for high power transmitter applications for IMT-2000 and PCS/PCN base station systems. It is capable of delivering 100 watts of output power with high linear


    OCR Scan     		PDF NES1823P-100 NES1823P-100 IMT-2000 MESFET S parameter data sheet

    Untitled

    Abstract: No abstract text available
    Text: Back to Voltage Regulators NES1085 LOW DROPOUT VOLTAGE REGULATORS IV Dropout, 1.5V @ Max C urrent 0.01% Load Regulation 0.015% Line Regulation 1% Reference Voltage H ermetic TO-254Z Pak O utput C u rren t 3.0A 3 TERM IN AL PO SITIV E ADJUSTABLE Pinout Adjust


    OCR Scan     		PDF NES1085 O-254Z urrent-NES1085.

    NES137

    Abstract: No abstract text available
    Text: T im es ? NES137 3 TERMINAL NEGATIVE ADJUSTABLE LINEAR VOLTAGE REGULATORS Output Voltage Adjustable Form -1.2V to -37V 1.5A Output Current Guaranteed -55 C to +150 C Pin 1 Line Regulation Typically 0.01% /V Pin 2 Load Regulation Typically 0.3% Pin 3 Output Short Circuit Protected


    OCR Scan     		PDF NES137 125UC, NES137

    Untitled

    Abstract: No abstract text available
    Text: Back to FETs 0 /V E F ^ IP NES150/61 NEW ENGLAND SEMICONDUCTOR POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW R DS 0 n • LOW DRIVE REQUIREMENT • DYNAMIC d v /d t RATING A B SO L U T E M A X IM U M R A T IN G S (Tc = 25°C unless otherw ise noted)


    OCR Scan     		PDF NES150/61

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET_ NEC N-CHANNEL GaAs MES FET NES1821P-50 50 W L-BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1821P-50 is a 50 W push-pull type GaAsMESFETdesigned forhigh power transmitter applications for PCS, DCS and PHS base station systems. It is capableof delivering 50 wattsof output power CW


    OCR Scan     		PDF NES1821P-50 NES1821P-50 1821P

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 100W L-BAND TWIN POWER GaAs MESFET NES1823P-100 OUTLINE DIMENSIONS Units in mm FEATURES • HIGH OUTPUT POWER: 1 0 0 W T Y P • HIGH LINEAR GAIN: 11 d B T Y P • HIGH DRAIN EFFICIENCY: 50 % TYP @ V ds = 10 V, I d = 6 A, f = 2.2 GHz


    OCR Scan     		PDF NES1823P-100 NES1823P-100 24-Hour

    iosq 050

    Abstract: NES1417-20B n channel fet k 1118 SC 1482
    Text: L-BAND POWER GaAs MESFET NES1417-20B NOT RECOMMENDED FOR NEW DESIGN PRELIMINARY FEATURES_ • HIGH P out 20 W 43.0 dBm Typical Pi< • HIGH EFFICIENCY 44% Power Added Efficiency • H GH LINEAR GAIN 14 dB Typical Linear Gain • LOW IMD -40 dBc @ 32 dBm (SCL)


    OCR Scan     		PDF NES1417-20B NES1417-20B J22iL iosq 050 n channel fet k 1118 SC 1482

    ES1821

    Abstract: M 0737
    Text: PRELIMINARY DATA SHEET 30 W L-BAND NES1821 B-30 POWER GaAs MESFET FEATURES_ OUTLINE DIMENSIONS Units in mm • C L A S S A OR AB OPERATION P A C K A G E OUTLIN E T-79 • HIGH OUTPUT POW ER • HIGH GAIN • HIGH POW ER ADDED EFFICIENCY • PARTIALLY M ATCHED


    OCR Scan     		PDF NES1821 1821B-30 ES1821 M 0737