transistor ne425s01
Abstract: NEC Ga FET marking L C10535E NE425S01 NE425S01-T1 NE425S01-T1B NEC Ga FET marking C
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE425S01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE425S01 is a Hetero Junction FET that utilizes the Unit: mm hetero junction to create high mobility electrons. Its excellent
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NE425S01
NE425S01
NE425S01-T1B
NE425S01-T1
transistor ne425s01
NEC Ga FET marking L
C10535E
NE425S01-T1
NE425S01-T1B
NEC Ga FET marking C
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low noise, hetero junction fet
Abstract: NE325S01 NEC Ga FET marking L C10535E NE325S01-T1 NE325S01-T1B TRANSISTOR 318 NEC Ga FET marking A ne325
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE325S01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE325S01 is a Hetero Junction FET that utilizes the Unit: mm hetero junction to create high mobility electrons. Its excellent
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NE325S01
NE325S01
NE325S01-T1B
NE325S01-T1
low noise, hetero junction fet
NEC Ga FET marking L
C10535E
NE325S01-T1
NE325S01-T1B
TRANSISTOR 318
NEC Ga FET marking A
ne325
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The Japanese Transistor Manual 1981
Abstract: japanese transistor manual 1981 NEC Ga FET marking L K 2645 transistor NE32484A NE32484A-SL NE32484A-T1 NE32484A-T1A NEC 3552 nec gaas fet marking
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32484A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE32484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent
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NE32484A
NE32484A
NE32484A-SL
The Japanese Transistor Manual 1981
japanese transistor manual 1981
NEC Ga FET marking L
K 2645 transistor
NE32484A-SL
NE32484A-T1
NE32484A-T1A
NEC 3552
nec gaas fet marking
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40847
Abstract: NE4210S01 NE4210S01-T1 NE4210S01-T1B ku 1490
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE4210S01 X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems.
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NE4210S01
NE4210S01
NE4210S01-T1
NE4210S01-T1B
40847
NE4210S01-T1
NE4210S01-T1B
ku 1490
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transistor marking v72
Abstract: transistor k 2628 NEC Ga FET marking C C10535E NE429M01 NE429M01-T1 VP15-00-3 hjfet NEC Ga FET marking A
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE429M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE429M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.
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NE429M01
NE429M01
NE429M01-T1
transistor marking v72
transistor k 2628
NEC Ga FET marking C
C10535E
NE429M01-T1
VP15-00-3
hjfet
NEC Ga FET marking A
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transistor NEC D 822 P
Abstract: NEC D 822 P C10535E NE434S01 NE434S01-T1 NE434S01-T1B
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE434S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE434S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent
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NE434S01
NE434S01
NE434S01-T1B
transistor NEC D 822 P
NEC D 822 P
C10535E
NE434S01-T1
NE434S01-T1B
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d768 transistor
Abstract: 3-pin D128 transistor transistor D128 transistor D586 D1515 ne32584c application note transistor d436 d388 transistor D832 transistor transistor D442
Text: DATA DATA SHEET SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the PACKAGE DIMENSIONS Unit: mm hetero junction to create high mobility electrons. Its excellent
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NE32584C
NE32584C
d768 transistor
3-pin D128 transistor
transistor D128
transistor D586
D1515
ne32584c application note
transistor d436
d388 transistor
D832 transistor
transistor D442
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K 1358 fet transistor
Abstract: NE334S01 nec 2761 s11 diode shottky C10535E NE334S01-T1 NE334S01-T1B
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE334S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE334S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent
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NE334S01
NE334S01
NE334S01-T1
NE334S01-T1B
K 1358 fet transistor
nec 2761
s11 diode shottky
C10535E
NE334S01-T1
NE334S01-T1B
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ps7200
Abstract: SOP4 dip8 relay NEC Ga FET marking L NEC PS71 ps710 PS7221 solid state mini relay automotive of 4-pin DIP switch 9910 dip8
Text: N E C E l ec t r o n i c s SOLI D STAT E R E L AY S — 2 0 0 8 California Eastern Laboratories is the exclusive sales and marketing partner for the products made by the Compound Semiconductor Devices Division of NEC Electronics Corporation CSDD . These include
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Singl4-6720
CL-610A
ps7200
SOP4
dip8 relay
NEC Ga FET marking L
NEC PS71
ps710
PS7221
solid state mini relay automotive
of 4-pin DIP switch
9910 dip8
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HA 12058
Abstract: 9971GI nec 2561-2 NEC Ga FET marking A NEC Ga FET marking Rf
Text: DATA SHEET GaAs MES FET NE76038 G ENERAL PURPOSE N-CHANNEL GaAs MES FET DESCRIPTION NE76038 is a N-channel GaAs MES FET housed in plastic package. The device is fabricated by ion implantation for im proved RF and DC performance reliability and uniform ity. Its excellent low noise and high associated gain make
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NE76038
NE76038
HA 12058
9971GI
nec 2561-2
NEC Ga FET marking A
NEC Ga FET marking Rf
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TC-7739
Abstract: 2SJ203 T200 T400
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 MOS FIELD EFFECT TRANSISTOR 2 S J2 0 3 P-CHANNEL MOS FET FOR SWITCHING The 2SJ203 is a P-channel vertical type MOS FET w hich can be driven
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2SJ203
TC-7739
T200
T400
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NEC Ga FET marking L
Abstract: U/25/20/TN26/15/850/NE32984D
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Unit: mm
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NE32984D
NE32984D
NE32984D-SL
NE32984Dr
NEC Ga FET marking L
U/25/20/TN26/15/850/NE32984D
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2SJ166
Abstract: 2SJ186 2SK1132 T100 p-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING marking
Text: m - MOS FIELD EFFECT TRANSISTOR ELECTRON DEVICE 2SJ166 P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING PACKAGE DIMENSIONS Unit : mm 2.8 ± 0.2 1.5 The 2SJ166, P-channel vertical type MOS FET, is a switching device which can be driven directly by the output of ICs having a 5 V power
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2SJ166
2SJ166,
2SJ166
2SJ186
2SK1132
T100
p-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING marking
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K1132
Abstract: 2SJ166 2SJ186 2SK1132 T100
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials. P1 98.2 m - MOS FIELD EFFECT TRANSISTOR ELECTRON DEVICE 2SJ166 P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
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2SJ166
2SJ166,
K1132
2SJ166
2SJ186
2SK1132
T100
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Untitled
Abstract: No abstract text available
Text: DA TA SH EET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE429M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE429M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.
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NE429M01
NE429M01
NE429M01-T1
Fin/50
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3692 nec
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET IV IF f / h e t e r o j u n c t io n f ie l d e f f e c t t r a n s is t o r / NE4210M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE4210M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its
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NE4210M01
NE4210M01
200/im
NE4210M01-T1
3692 nec
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NEC Ga FET marking L
Abstract: No abstract text available
Text: DATA SH E E T HETERO JUNCTION FIELD EFFECT TRANSISTOR NE429M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE429M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.
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NE429M01
NE429M01
200pm
NEC Ga FET marking L
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Nec b 616
Abstract: 2SK1581
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98 .2 DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR ELECTRON DEVICE 2 S K 1 581 N-CHAIMNEL MOS FET FOR SWITCHING
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2SK1581,
Nec b 616
2SK1581
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NEC Ga FET marking Rf
Abstract: nec gaas fet marking
Text: DATA SHEET GaAs MES FET NE76184B L to X BAND OSC N-CHANNEL GaAs MES FET DESCRIPTION N E76184B is a N-channel GaAs MES FET housed in ce ram ic package. The device is fabricated by ion im plantation for im proved RF and DC perform ance reliability and uniform ity.
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NE76184B
NE76184B
NE76184B-T1
NE76184B-T1A
IR30-00
NEC Ga FET marking Rf
nec gaas fet marking
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SMt Transistor g16
Abstract: 2SK1590
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2S K 1590 N -C H A N N EL M O S FET FOR S W IT C H IN G The 2SK1590, N-channel vertical typ e MOS FET, is a switching PACKAGE DIMENSIONS Unit : mm device w hich can be driven d ire ctly by the o u tp u t o f ICs having a 5 V
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2SK1590
2SK1590,
SMt Transistor g16
2SK1590
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NEC Ga FET marking L
Abstract: lg TYP 513 309 NE329S01 low noise FET NEC U SAAI Marking
Text: _ DATA SHEET_ M F P / HETERO JUNCTION FIELD EFFECT TRANSÌSTOR / NE329S01 X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE329S01 is a Hetero Junction FET that utilizes the Unit: mm
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NE329S01
NE329S01
NE329S01-T1
NE329S01-T1B
NEC Ga FET marking L
lg TYP 513 309
low noise FET NEC U
SAAI Marking
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transistor NEC D 822 P
Abstract: nec gaas fet marking NEC Ga FET transistor ne425s01
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE425S01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE425S01 is a Hetero Junction FET that utilizes the Unit: mm hetero junction to create high m obility electrons. Its excellent
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NE425S01
NE425S01
NE425S01-T1
transistor NEC D 822 P
nec gaas fet marking
NEC Ga FET
transistor ne425s01
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nec a 634
Abstract: Nec K 872 NEC Ga FET C band FET transistor s-parameters NEC 1132 NEC Ga FET marking D
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE325S01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE325S01 is a Hetero Junction FET that utilizes the hetero junction to create high m obility electrons. Its excellent low noise and high associated gain make it suitable for DBS
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NE325S01
NE325S01
NE325S01-T1
nec a 634
Nec K 872
NEC Ga FET
C band FET transistor s-parameters
NEC 1132
NEC Ga FET marking D
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nec 0882 p
Abstract: nec 0882 p 2
Text: PRELIMINARY DATA SHEET_ HETERO JUNCTION FIELD EFFECT TRANSISTOR N E 3 2 1 0 S 0 1 X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons.
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NE3210S01
NE3210S01-T1
P14067EJ1V0D
NE3210S01
nec 0882 p
nec 0882 p 2
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