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    NE900000 Price and Stock

    SiTime Corporation SIT3372AC-1B9-28NE90.000000

    MEMS OSC VCXO 90.0000MHZ LVPECL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIT3372AC-1B9-28NE90.000000 1
    • 1 $10.92
    • 10 $10.237
    • 100 $9.5547
    • 1000 $8.53099
    • 10000 $8.53099
    		Buy Now

    SiTime Corporation SIT3372AC-2E3-33NE90.000000

    MEMS OSC VCXO 90.0000MHZ LVDS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIT3372AC-2E3-33NE90.000000 1
    • 1 $9.9
    • 10 $9.285
    • 100 $8.6656
    • 1000 $7.73718
    • 10000 $7.73718
    		Buy Now

    SiTime Corporation SIT3372AC-4E3-28NE90.000000

    MEMS OSC VCXO 90.0000MHZ HCSL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIT3372AC-4E3-28NE90.000000 1
    • 1 $9.9
    • 10 $9.285
    • 100 $8.6656
    • 1000 $7.73718
    • 10000 $7.73718
    		Buy Now

    SiTime Corporation SIT3372AI-4E2-25NE90.000000

    MEMS OSC VCXO 90.0000MHZ HCSL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIT3372AI-4E2-25NE90.000000 1
    • 1 $13.29
    • 10 $12.436
    • 100 $11.5779
    • 1000 $11.40642
    • 10000 $11.40642
    		Buy Now

    SiTime Corporation SIT3372AI-2E9-30NE90.000000

    MEMS OSC VCXO 90.0000MHZ LVDS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIT3372AI-2E9-30NE90.000000 1
    • 1 $11.22
    • 10 $10.518
    • 100 $9.8164
    • 1000 $8.7646
    • 10000 $8.7646
    		Buy Now
    Find more NE900000 price and stock on Findchips.com

    NE900000 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    NE900275

    Abstract: NE900175 ne900075 NE900200 S50240 NE900100G NE9002 ne900 NE9001 NE900000
    Text: NE9000 SERIES NE9001 SERIES NE9002 SERIES Ku-BAND MEDIUM POWER GaAs MESFET FEATURES • TYPICAL LINEAR GAIN vs. FREQUENCY CLASS A OPERATION HIGH OUTPUT POWER POUT = 26.5 dBm G1dB = 7 dB 24 21 HIGH POWER ADDED EFFICIENCY Linear Gain dB • • DESCRIPTION


    Original     		NE9000 NE9001 NE9002 NE9000, NE9001, NE900000, NE900100, NE900200, NE900275 NE900175 ne900075 NE900200 S50240 NE900100G ne900 NE900000 PDF

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


    OCR Scan     		AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720 PDF

    ne900075

    Abstract: NE9000
    Text: X and Ku-Band Internally Matched GaAs Devices Typical Specifications @ Tc = 25°C Uiwartty Linear Power Added PidB Gain Efficiency1 V d s dBm (dB) (% ) (V) Pmt P out e w w m tf Dootm^ni (A) IMS (dBc) (V) (A) Package Style NEZ1414-2E 14 to 14.5 34.0 7,5 27


    OCR Scan     		NEZ1414-2E NEZ1414-4E NEZ1414-8E NEZ1011-2E NEZ1011-8E ne900075 NE9000 PDF

    NE900275

    Abstract: No abstract text available
    Text: NE9000 SERIES NE9001 SERIES NE9002 SERIES Ku-BAND MEDIUM POWER GaAs MESFET FEATURES • CLASS A OPERATION • HIGH OUTPUT POWER Pout = 26.5 dBm GidB = 7dB • HIGH POWER ADDED EFFICIENCY *D DESCRIPTION ¡3 O 5 The NIE9000, N E 9 0 0 1 , and N E 9 0 0 2 are 0.5 micron recessed


    OCR Scan     		NE9000 NE9001 NE9002 NIE9000, IS12S21I NE900275 PDF

    NE8002

    Abstract: NE800196 NE800 E8500 NE9001
    Text: Power GaAs FET Selection Guide C-BAND INTERNALLY MATCHED DEVICES Typical Specifications @ T a = 25°C U n ta rlty P a m rtO a M Linear Gain dB PowBf Added Efficiency Frequency R an g* (GHz) (dBm) N E Z 3 6 4 2 -1 5 D 3 .6 to 4.2 42.5 10.0 37 N E Z 3 6 4 2 -8 D


    OCR Scan     		542-15D NEZS964-1SDD NEZ7785-15D/DD NEZ4450-15D/DD NEZ3642-8D NEZ6472-1S NEZ7177-8D/DD NEZ5984-8D/DD NEZ4450-8D/DD NEZ8472-8P/DD NE8002 NE800196 NE800 E8500 NE9001 PDF

    NE900175

    Abstract: No abstract text available
    Text: NE9000 SERIES NE9001 SERIES NE9002 SERIES Ku-BAND MEDIUM POWER GaAs MESFET FEATURES TYPICAL UNEAR GAIN vs. FREQUENCY • CLASS A OPERATION • HIGH OUTPUT POWER 3 o u t = 26.5 dBm 3idB - 7 dB • HIGH POWER ADDED EFFICIENCY DESCRIPTION The NE9000, N E 9001, and NE9002 are 0.5 micron recessed


    OCR Scan     		NE9000 NE9001 NE9002 NE9000, E900100, E900200, E900000, E900200 NE900175 PDF

    NE900275

    Abstract: NE9002
    Text: NE9000 SERIES NE9001 SERIES NE9002 SERIES Ku-BAND MEDIUM POWER GaAs MESFET FEATURES . CLASS A OPERATION . HIGH OUTPUT POWER Pout = 26.5 dBm GidB = 7 d B • HIGH POWER ADDED EFFICIENCY CÛ *o DESCRIPTION 3 The NE9000, NE9001, and NE9002 are 0.5 micron recessed


    OCR Scan     		NE9000 NE9001 NE9002 NE9000, NE9001, theNE900000, NE900100, NE900200, NE900000, NE900275 PDF

    NE800495-4

    Abstract: GaAs MESFET NE900474-15 NE800400 NE8004 NE800296 NES2527-20B NE900400 NES1417-20B NE800196
    Text: Power GaAs FET Selection Guide C-BAND INTERNALLY MATCHED DEVICES Typical Specifications @ T a = 2 5 °C Mr 1 v . j Limar PomrMdad Giln <« Effldtncy %) vn (6Hi) (dBm) NEZ4450-15D 4.4 to 5.1 42.5 10.0 35 10.0 NEZ4450-15DD 4.410 5.1 42.5 10.0 35 NEZ4450-8D


    OCR Scan     		NEZ4450-15D NEZ4450-15DD NEZ4450-8D NEZ4450-8DD MEZ4450-4D NEZ4450-4DD MEZ5964-15D NEZ5964-15DD NEZ5964-8D KEZ5964-8DD NE800495-4 GaAs MESFET NE900474-15 NE800400 NE8004 NE800296 NES2527-20B NE900400 NES1417-20B NE800196 PDF