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NEC Electronics Group NE900175
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Circuit Assembly NE-9001345 CABLE
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NE9001 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NE9001		NEC	Ku-BAND MEDIUM POWER GaAs MESFET		Original	PDF

NE9001 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
NE900275 Abstract: NE900175 ne900075 NE900200 S50240 NE900100G NE9002 ne900 NE9001 NE900000 Text: NE9000 SERIES NE9001 SERIES NE9002 SERIES Ku-BAND MEDIUM POWER GaAs MESFET FEATURES • TYPICAL LINEAR GAIN vs. FREQUENCY CLASS A OPERATION HIGH OUTPUT POWER POUT = 26.5 dBm G1dB = 7 dB 24 21 HIGH POWER ADDED EFFICIENCY Linear Gain dB • • DESCRIPTION	Original	NE9000 NE9001 NE9002 NE9000, NE9001, NE900000, NE900100, NE900200, NE900275 NE900175 ne900075 NE900200 S50240 NE900100G ne900 NE900000	PDF
NE900474-13 Abstract: NE900474-15 NE9004 NE900400G NE900 NE9002 AN-1001 NE9000 NE9001 UM1000 Text: NE9004 SERIES Ku-BAND POWER GaAs MESFET FEATURES • DESCRIPTION NE900474-13, -15 OUTPUT POWER AND POWER ADDED EFFICIENCY vs. INPUT POWER 35 The NE9004 is a 0.5 micron recessed gate GaAs power FET for commercial and space amplifier and oscillator applications to 20 GHz. This device is part of the NE900 series of KuBand power transistors which includes the NE9000, NE9001	Original	NE9004 NE900474-13, NE9004 NE900 NE9000, NE9001 NE9002. 24-Hour NE900474-13 NE900474-15 NE900400G NE9002 AN-1001 NE9000 NE9001 UM1000	PDF
NE9004 Abstract: NE850R5 9002 NE85001 NE9000 NE9001 ne900 Text: Typical Linear Gain vs. Frequency Unmatched Driver Devices 24.0 Linear Gain dB 21.0 NE850R5 18.0 NE9001/9002 NE9000 15.0 12.0 NE1280 NE85001 9.0 6.0 NE9004 3.0 0.3 10.0 1.0 30.0 Frequency (GHz) EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS	Original	NE850R5 NE9001/9002 NE9000 NE1280 NE85001 NE9004 24-Hour NE9004 NE850R5 9002 NE85001 NE9000 NE9001 ne900	PDF
2SC3355 SPICE MODEL Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101 Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness	Original	F2002: F2003: F2004: 2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101	PDF
NE800296 Abstract: diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph gunn diode ghz s-parameter NE800196 impatt diode NE800495-4 Text: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in	Original	AN82901-1 24-Hour NE800296 diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph gunn diode ghz s-parameter NE800196 impatt diode NE800495-4	PDF
NE900275 Abstract: NE900175 ne900075 3232 marking RF 98 NE9000 Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 75 +0.15 -0.05 2 PLACES f 1.8 GATE 0.5 ± 0.1 SOURCE 2.7 2.3 3.0 MIN BOTH LEADS DRAIN 2.7 TYP 7.0 +0.06 0.1 -0.02 9.8 MAX 2.85 1.13 0.9 MAX	Original	NE900075 NE900175 NE900275 24-Hour NE900275 NE900175 ne900075 3232 marking RF 98 NE9000	PDF
NE800296 Abstract: NE800196 NE24406 diode deg avalanche zo 150 63 SK3448 ne8002 NE868199 shockley diode NE800495-4 shockley diode application Text: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs 9/82 INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in	Original	AN82901-1 NE800296 NE800196 NE24406 diode deg avalanche zo 150 63 SK3448 ne8002 NE868199 shockley diode NE800495-4 shockley diode application	PDF
NE900275 Abstract: No abstract text available Text: NE9000 SERIES NE9001 SERIES NE9002 SERIES Ku-BAND MEDIUM POWER GaAs MESFET FEATURES • CLASS A OPERATION • HIGH OUTPUT POWER Pout = 26.5 dBm GidB = 7dB • HIGH POWER ADDED EFFICIENCY *D DESCRIPTION ¡3 O 5 The NIE9000, N E 9 0 0 1 , and N E 9 0 0 2 are 0.5 micron recessed	OCR Scan	NE9000 NE9001 NE9002 NIE9000, IS12S21I NE900275	PDF
NE900175 Abstract: No abstract text available Text: NE9000 SERIES NE9001 SERIES NE9002 SERIES Ku-BAND MEDIUM POWER GaAs MESFET FEATURES TYPICAL UNEAR GAIN vs. FREQUENCY • CLASS A OPERATION • HIGH OUTPUT POWER 3 o u t = 26.5 dBm 3idB - 7 dB • HIGH POWER ADDED EFFICIENCY DESCRIPTION The NE9000, N E 9001, and NE9002 are 0.5 micron recessed	OCR Scan	NE9000 NE9001 NE9002 NE9000, E900100, E900200, E900000, E900200 NE900175	PDF
NE900275 Abstract: NE9002 Text: NE9000 SERIES NE9001 SERIES NE9002 SERIES Ku-BAND MEDIUM POWER GaAs MESFET FEATURES . CLASS A OPERATION . HIGH OUTPUT POWER Pout = 26.5 dBm GidB = 7 d B • HIGH POWER ADDED EFFICIENCY CÛ *o DESCRIPTION 3 The NE9000, NE9001, and NE9002 are 0.5 micron recessed	OCR Scan	NE9000 NE9001 NE9002 NE9000, NE9001, theNE900000, NE900100, NE900200, NE900000, NE900275	PDF
SVI 3104 c Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720 Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or	OCR Scan	AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720	PDF
ne900075 Abstract: NE9000 Text: X and Ku-Band Internally Matched GaAs Devices Typical Specifications @ Tc = 25°C Uiwartty Linear Power Added PidB Gain Efficiency1 V d s dBm (dB) (% ) (V) Pmt P out e w w m tf Dootm^ni (A) IMS (dBc) (V) (A) Package Style NEZ1414-2E 14 to 14.5 34.0 7,5 27	OCR Scan	NEZ1414-2E NEZ1414-4E NEZ1414-8E NEZ1011-2E NEZ1011-8E ne900075 NE9000	PDF
NE8002 Abstract: NE800196 NE800 E8500 NE9001 Text: Power GaAs FET Selection Guide C-BAND INTERNALLY MATCHED DEVICES Typical Specifications @ T a = 25°C U n ta rlty P a m rtO a M Linear Gain dB PowBf Added Efficiency Frequency R an g* (GHz) (dBm) N E Z 3 6 4 2 -1 5 D 3 .6 to 4.2 42.5 10.0 37 N E Z 3 6 4 2 -8 D	OCR Scan	542-15D NEZS964-1SDD NEZ7785-15D/DD NEZ4450-15D/DD NEZ3642-8D NEZ6472-1S NEZ7177-8D/DD NEZ5984-8D/DD NEZ4450-8D/DD NEZ8472-8P/DD NE8002 NE800196 NE800 E8500 NE9001	PDF
NE900474-15 Abstract: NE900474 NE900474-13 14012 cl NE9004 NE900400G DS 45-800 Text: Ku-BAND POWER GaAs MESFET FEATURES NE9004 SERIES NE900474-13.-15 OUTPUT POWER AND POWER ADDED EFFICIENCY vs. INPUT POWER CLASS A OPERATION HIGH POWER ADDED EFFICIENCY EMPLOYS P.H.S. PLATED HEAT SINK AND VIA HOLE GROUNDING BROAD BANDWIDTH INPUT OF PACKAGED DEVICE PARTIALLY MATCHED	OCR Scan	NE9004 NE900474-13 NE9001 AN-1001 NE900474-15 NE900474 14012 cl NE900400G DS 45-800	PDF

NE900474-13 Abstract: ne900474-15 NE9004 NE900474 NE900400G NE900400 Text: Ku-BAND POWER GaAs MESFET FEATURES NE9004 SERIES NE900474-13, <15 OUTPUT POWER AND POWER ADDED EFFICIENCY vs. INPUT POWER CLASS A OPERATION HIGH POWER ADDED EFFICIENCY EMPLOYS P.H.S. PLATED HEAT SINK AND VIA HOLE GROUNDING BROAD BANDWIDTH INPUT OF PACKAGED DEVICE PARTIALLY MATCHED	OCR Scan	NE9004 NE900474-13, E9004 E9000, NE9001 NE9002. AN-1001 NE900474-13 ne900474-15 NE900474 NE900400G NE900400	PDF
NE800495-4 Abstract: GaAs MESFET NE900474-15 NE800400 NE8004 NE800296 NES2527-20B NE900400 NES1417-20B NE800196 Text: Power GaAs FET Selection Guide C-BAND INTERNALLY MATCHED DEVICES Typical Specifications @ T a = 2 5 °C Mr 1 v . j Limar PomrMdad Giln <« Effldtncy %) vn (6Hi) (dBm) NEZ4450-15D 4.4 to 5.1 42.5 10.0 35 10.0 NEZ4450-15DD 4.410 5.1 42.5 10.0 35 NEZ4450-8D	OCR Scan	NEZ4450-15D NEZ4450-15DD NEZ4450-8D NEZ4450-8DD MEZ4450-4D NEZ4450-4DD MEZ5964-15D NEZ5964-15DD NEZ5964-8D KEZ5964-8DD NE800495-4 GaAs MESFET NE900474-15 NE800400 NE8004 NE800296 NES2527-20B NE900400 NES1417-20B NE800196	PDF