NE661M04 Search Results

NE661M04 Datasheets (8)

Part	Manufacturer	Description	Datasheet Type	PDF
NE661M04	California Eastern Laboratories	NPN SILICON HIGH FREQUENCY TRANSISTOR	Original	PDF
NE661M04	NEC	NPN SILICON HIGH FREQUENCY TRANSISTOR	Original	PDF
NE661M04	NEC	NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD	Original	PDF
NE661M04-AZ	NEC	TRANS GP BJT 3.3V 0.012A 4M04	Original	PDF
NE661M04-T2	NEC	NPN SILICON HIGH FREQUENCH TRANSISTOR	Original	PDF
NE661M04-T2	NEC	NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD	Original	PDF
NE661M04-T2-A	California Eastern Laboratories	NPN SILICON HIGH FREQUENCY TRANSISTOR	Original	PDF
NE661M04-T2-AZ	NEC	TRANS GP BJT 3.3V 0.012A 4M04 T/R	Original	PDF

NE661M04 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2SC5507 Abstract: NE661M04 NE661M04-T2 S21E 842 ic 2912 Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR NE661M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • HIGH POWER GAIN: IS21EI2 = 17 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 22 dB @ 2 GHz •	Original	NE661M04 IS21EI2 OT-343 NE661M04 NE661M04-T2 24-Hour 2SC5507 NE661M04-T2 S21E 842 ic 2912	PDF
33 nec 125 t2 Abstract: transistor marking T78 ghz C10535E NE661M04 NE661M04-T2 Text: DATA SHEET NPN SILICON RF TRANSISTOR NE661M04 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Low noise and high gain with low collector current • NF = 1.2 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 2 mA	Original	NE661M04 NE661M04-T2 33 nec 125 t2 transistor marking T78 ghz C10535E NE661M04 NE661M04-T2	PDF
Untitled Abstract: No abstract text available Text: NONLINEAR MODEL NE661M04 CCBPKG SCHEMATIC CCB LC LBX LCX Collector LB Base CCE LE CBEPKG CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 ADDITIONAL PARAMETERS Parameters NE661M04 IS 2.2e-18 MJC 0.33 CCB 0.08e-12 BF 120 XCJC	Original	NE661M04 2e-18 64e-14 1e-11 3e-12 001e-12 2e-12 NE661M04 08e-12	PDF
Untitled Abstract: No abstract text available Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE661M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • HIGH POWER GAIN: IS21EI2 = 17 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 22 dB @ 2 GHz • NEW LOW PROFILE M04 PACKAGE:	Original	IS21EI2 OT-343 NE661M04 NE661M04	PDF
transistor MJE 2955 Abstract: 842 ic SOT 663 footprint TRANSISTOR nf 842 Text: SILICON TRANSISTOR NE661M04 NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • HIGH GAIN BANDWIDTH: fT = 25 GHz HIGH POWER GAIN: IS21EI2 = 17 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 22 dB @ 2 GHz • NEW LOW PROFILE M04 PACKAGE:	Original	NE661M04 IS21EI2 OT-343 NE661M04 2e-12 1e-11 08e-12 transistor MJE 2955 842 ic SOT 663 footprint TRANSISTOR nf 842	PDF
az 2732 132 Abstract: 2SC5507 NE661M04 NE661M04-T2-A S21E max10022 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE661M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • HIGH POWER GAIN: IS21EI2 = 17 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 22 dB @ 2 GHz • NEW LOW PROFILE M04 PACKAGE:	Original	NE661M04 IS21EI2 OT-343 NE661M04 az 2732 132 2SC5507 NE661M04-T2-A S21E max10022	PDF
ua 722 fc Abstract: 2SC5507 NE661M04 NE661M04-T2 S21E max10022 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE661M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • HIGH POWER GAIN: IS21EI2 = 17 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 22 dB @ 2 GHz • NEW LOW PROFILE M04 PACKAGE:	Original	NE661M04 IS21EI2 OT-343 NE661M04 ua 722 fc 2SC5507 NE661M04-T2 S21E max10022	PDF
mobile phone basic block diagram Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .	Original	G0706 PX10020EJ41V0PF mobile phone basic block diagram PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT	PDF
FET marking code g5d Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .	Original	R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic	PDF
nec mosfet marked v75 Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77 Text: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77	PDF
ne3511s02 s2p Abstract: ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N Text: 2007 California Eastern Laboratories HEADQUARTERS U.S. REPS INTERNATIONAL REPS CEL 4590 Patrick Henry Drive Santa Clara CA 95054 Tel: 408 919-2500 Fax: (408) 988-0279 www.cel.com Northwest Disman Bakner (800) 347-3010 Canada BC, Alberta, Saskatchewan	Original	07/2M 847Indiana/Kentucky ne3511s02 s2p ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N	PDF
transistor marking T79 ghz Abstract: marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book Text: SILICON MICROWAVE SEMICONDUCTORS Silicon/Silicon Germanium discrete, MMIC SELECTION GUIDE January 2005 Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A. When the product s listed in this document is subject to any applicable import or export control laws and regulation of the authority	Original	PU10015EJ04V0PF transistor marking T79 ghz marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book	PDF
XM0830SJ Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563 Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters	Original	24GHz BF517 BF770A BF771 BF775 BF799 BF799W BFP181 BFP181R BFP182 XM0830SJ smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563	PDF
nec b1007 Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G Text: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,	Original	NE68018 NE680 UPA801TC UPA808TC UPA821TC UPA826TC UPA861TD UPA831TC UPA862TD UPA835TC nec b1007 T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G	PDF

marking code C1E SMD Transistor Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817 Text: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17	Original	P14740EE5V0PF00 marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817	PDF
m33 tf 130 Abstract: NESG204619 NESG2046 NESG2030M042 NESG2101M05 NE68030 NE68033 NE68039 NE68133 NE68539 Text: www.cel.com NEC Small Signal Silicon Bipolar Transistors For Low Current, Low Voltage Applications Part Number TEST f GHz NF/GA VCE ICQ (V) (mA) MAG / MSG NF GA TYP TYP VCE IC TYP (dB) (dB) (V) (mA) (dB) fT TYP hFE (GHz) TYP	Original	NE68039 NE68139 NE68539 NE85639 OT-143 ne68000 ne68100 ne85600 UPA862TD NE894 m33 tf 130 NESG204619 NESG2046 NESG2030M042 NESG2101M05 NE68030 NE68033 NE68039 NE68133 NE68539	PDF
GPS RECEIVER L10 Abstract: gps l10 AN1040 UPB1004 gps architecture GPS2000 J2-C12 schematic diagram receiver satellite SSB Receiver UPB1007K Text: California Eastern Laboratories APPLICATION NOTE AN1040 Low-Power IC Packs GPS Receivers Olivier Bernard, Manager, Strategic Marketing, Eric Bausback, Manager, Product Development, Benoit Krummenacker, Design Engineer. California Eastern Laboratories, 4590 Patrick Henry Dr., Santa Clara, CA 95054	Original	AN1040 GPS RECEIVER L10 gps l10 AN1040 UPB1004 gps architecture GPS2000 J2-C12 schematic diagram receiver satellite SSB Receiver UPB1007K	PDF
ic isl 887 Abstract: 2SC5508 NE3514 SW SPDT NE3515S02 NE5510279A NESG2031M05 PG2179 NE3509M04 NE3517S03 Text: RF & マイクロ波デバイスシステムブロック www.renesas.com 2010.04 目次 1. はじめに •··········································································································································· 3	Original	PA86x PG2158T5K PC3218T5Y NES1823M-45, NES1823M-180, NES1823M-240, NES1823S-45, NES1823S-90 R09CA0001JJ0100 PX10020JJ42V0PF ic isl 887 2SC5508 NE3514 SW SPDT NE3515S02 NE5510279A NESG2031M05 PG2179 NE3509M04 NE3517S03	PDF
2SK2396A Abstract: NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 k2396 K2597 Marking Code SAW MOS transistor Text: SILICON MICROWAVE SEMICONDUCTORS Silicon discrete, Silicon MMIC Dual gate GaAs FET SELECTION GUIDE 1999/2000 6th Edition [MEMO] 2 Selection Guide P10100EJ6V0SG00 • The information in this document is based on documents issued in October,1999 at the latest. The	Original	P10100EJ6V0SG00 2SK2396A NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 k2396 K2597 Marking Code SAW MOS transistor	PDF
SMD transistor M05 Abstract: smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR Text: NEC XXXXXXXXXX RF & Wireless Semiconductors 2010 2 P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories serves designers, OEMs and contract manufacturers in the RF & Wireless, Mobilecomm, Multimedia, Broadband Communications, Industrial Control, and Automated Test Equipment ATE	Original	10/2M SMD transistor M05 smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR	PDF
BB 509 varicap diode Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe Text: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s	Original		PDF
UAA 1006 Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71 Text: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH	Original	D-40472 I-20124 I-00139 D-30177 GB-MK14 D-81925 S-18322 F-78142 E-28007 UAA 1006 manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71	PDF
BGU7073 Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188 Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by	Original		PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET NEC NPN SILICON HIGH FREQUENCY TRANSISTOR NE661M04 FEATURES HIGH G AIN BANDW IDTH: f r = 25 GHz HIGH PO W ER GAIN: IS2 1 EI2 = 17 dB TYP at 2 GHz LOW NO ISE FIGURE: NF = 1.2 dB at 2 GHz HIG H M AXIM UM STABLE GAIN: 22 dB @ 2 GHz NEW LOW PRO FILE M04 PACKAGE:	OCR Scan	NE661M04 T-343 E661M NE661M NE661M04 NE661M04-T2	PDF

Privacy Settings

NE661M04 Search Results

NE661M04 Datasheets (8)

NE661M04 Datasheets Context Search

2SC5507

33 nec 125 t2

Untitled

Untitled

transistor MJE 2955

az 2732 132

ua 722 fc

mobile phone basic block diagram

FET marking code g5d

nec mosfet marked v75

ne3511s02 s2p

transistor marking T79 ghz

XM0830SJ

nec b1007

marking code C1E SMD Transistor

m33 tf 130

GPS RECEIVER L10

ic isl 887

2SK2396A

SMD transistor M05

BB 509 varicap diode

UAA 1006

BGU7073

Untitled