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    NE661M Search Results

    NE661M Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE661M04 California Eastern Laboratories NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
    NE661M04 NEC NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
    NE661M04 NEC NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD Original PDF
    NE661M04-AZ NEC TRANS GP BJT 3.3V 0.012A 4M04 Original PDF
    NE661M04-T2 NEC NPN SILICON HIGH FREQUENCH TRANSISTOR Original PDF
    NE661M04-T2 NEC NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD Original PDF
    NE661M04-T2-A California Eastern Laboratories NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
    NE661M04-T2-AZ NEC TRANS GP BJT 3.3V 0.012A 4M04 T/R Original PDF
    NE661M05 NEC NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05) Original PDF
    NE661M05-AZ NEC TRANS GP BJT NPN 3.3V 0.012A 4M05 Original PDF
    NE661M05FB NEC NPN Silicon RF Transistor for Low Current, Low-noise, High-gain Amplification Flat-lead 4-pin Thin-type Super Minimold (M05) Original PDF
    NE661M05FB-AZ NEC TRANS GP BJT NPN 3.3V 0.012A 4M05 Original PDF
    NE661M05FB-T1 NEC NPN Silicon RF Transistor for Low Current, Low-noise, High-gain Amplification Flat-lead 4-pin Thin-type Super Minimold (M05) Original PDF

    NE661M Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC5507

    Abstract: NE661M04 NE661M04-T2 S21E 842 ic 2912
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR NE661M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • HIGH POWER GAIN: IS21EI2 = 17 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 22 dB @ 2 GHz •


    Original     		PDF NE661M04 IS21EI2 OT-343 NE661M04 NE661M04-T2 24-Hour 2SC5507 NE661M04-T2 S21E 842 ic 2912

    33 nec 125 t2

    Abstract: transistor marking T78 ghz C10535E NE661M04 NE661M04-T2
    Text: DATA SHEET NPN SILICON RF TRANSISTOR NE661M04 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Low noise and high gain with low collector current • NF = 1.2 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 2 mA


    Original     		PDF NE661M04 NE661M04-T2 33 nec 125 t2 transistor marking T78 ghz C10535E NE661M04 NE661M04-T2

    NE661M05

    Abstract: No abstract text available
    Text: DATA SHEET NPN SILICON RF TRANSISTOR NE661M05 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05 FEATURES • Low noise and high gain with low collector current NF = 1.2 dB TYP. @ VCE = 2 V, IC = 2 mA, f = 2 GHz


    Original     		PDF NE661M05 NE661M05-T1 PU10323EJ02V0DS NE661M05

    Untitled

    Abstract: No abstract text available
    Text: NONLINEAR MODEL NE661M04 CCBPKG SCHEMATIC CCB LC LBX LCX Collector LB Base CCE LE CBEPKG CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 ADDITIONAL PARAMETERS Parameters NE661M04 IS 2.2e-18 MJC 0.33 CCB 0.08e-12 BF 120 XCJC


    Original     		PDF NE661M04 2e-18 64e-14 1e-11 3e-12 001e-12 2e-12 NE661M04 08e-12

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE661M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • HIGH POWER GAIN: IS21EI2 = 17 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 22 dB @ 2 GHz • NEW LOW PROFILE M04 PACKAGE:


    Original     		PDF IS21EI2 OT-343 NE661M04 NE661M04

    transistor MJE 2955

    Abstract: 842 ic SOT 663 footprint TRANSISTOR nf 842
    Text: SILICON TRANSISTOR NE661M04 NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • HIGH GAIN BANDWIDTH: fT = 25 GHz HIGH POWER GAIN: IS21EI2 = 17 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 22 dB @ 2 GHz • NEW LOW PROFILE M04 PACKAGE:


    Original     		PDF NE661M04 IS21EI2 OT-343 NE661M04 2e-12 1e-11 08e-12 transistor MJE 2955 842 ic SOT 663 footprint TRANSISTOR nf 842

    az 2732 132

    Abstract: 2SC5507 NE661M04 NE661M04-T2-A S21E max10022
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE661M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • HIGH POWER GAIN: IS21EI2 = 17 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 22 dB @ 2 GHz • NEW LOW PROFILE M04 PACKAGE:


    Original     		PDF NE661M04 IS21EI2 OT-343 NE661M04 az 2732 132 2SC5507 NE661M04-T2-A S21E max10022

    marking NEC rf transistor

    Abstract: nec npn rf
    Text: PRELIMINARY DATA SHEET NPN SILICON RF TRANSISTOR NE661M05 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05 FEATURES • Low noise and high gain with low collector current NF = 1.2 dB TYP. @ VCE = 2 V, IC = 2 mA, f = 2 GHz


    Original     		PDF NE661M05 NE661M05 NE661M05-T1 PU10323EJ01V0DS marking NEC rf transistor nec npn rf

    ua 722 fc

    Abstract: 2SC5507 NE661M04 NE661M04-T2 S21E max10022
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE661M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • HIGH POWER GAIN: IS21EI2 = 17 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 22 dB @ 2 GHz • NEW LOW PROFILE M04 PACKAGE:


    Original     		PDF NE661M04 IS21EI2 OT-343 NE661M04 ua 722 fc 2SC5507 NE661M04-T2 S21E max10022

    mobile phone basic block diagram

    Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT
    Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF G0706 PX10020EJ41V0PF mobile phone basic block diagram PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF PU10323EJ02V0DS NE661M05

    transistor marking T79 ghz

    Abstract: marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book
    Text: SILICON MICROWAVE SEMICONDUCTORS Silicon/Silicon Germanium discrete, MMIC SELECTION GUIDE January 2005 Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A. When the product s listed in this document is subject to any applicable import or export control laws and regulation of the authority


    Original     		PDF PU10015EJ04V0PF transistor marking T79 ghz marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book

    XM0830SJ

    Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
    Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		PDF 24GHz BF517 BF770A BF771 BF775 BF799 BF799W BFP181 BFP181R BFP182 XM0830SJ smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563

    nec b1007

    Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
    Text: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,


    Original     		PDF NE68018 NE680 UPA801TC UPA808TC UPA821TC UPA826TC UPA861TD UPA831TC UPA862TD UPA835TC nec b1007 T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G

    BGT24MTR11

    Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
    Text: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		PDF 24GHz BF517 BF770A BF771 BF799 BF799W BFP181 BFP182 BFP182R BFP182W BGT24MTR11 AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586

    marking code C1E SMD Transistor

    Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
    Text: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17


    Original     		PDF P14740EE5V0PF00 marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817

    m33 tf 130

    Abstract: NESG204619 NESG2046 NESG2030M042 NESG2101M05 NE68030 NE68033 NE68039 NE68133 NE68539
    Text: www.cel.com NEC Small Signal Silicon Bipolar Transistors For Low Current, Low Voltage Applications Part Number TEST f GHz NF/GA VCE ICQ (V) (mA) MAG / MSG NF GA TYP TYP VCE IC TYP (dB) (dB) (V) (mA) (dB) fT TYP hFE (GHz) TYP


    Original     		PDF NE68039 NE68139 NE68539 NE85639 OT-143 ne68000 ne68100 ne85600 UPA862TD NE894 m33 tf 130 NESG204619 NESG2046 NESG2030M042 NESG2101M05 NE68030 NE68033 NE68039 NE68133 NE68539

    GPS RECEIVER L10

    Abstract: gps l10 AN1040 UPB1004 gps architecture GPS2000 J2-C12 schematic diagram receiver satellite SSB Receiver UPB1007K
    Text: California Eastern Laboratories APPLICATION NOTE AN1040 Low-Power IC Packs GPS Receivers Olivier Bernard, Manager, Strategic Marketing, Eric Bausback, Manager, Product Development, Benoit Krummenacker, Design Engineer. California Eastern Laboratories, 4590 Patrick Henry Dr., Santa Clara, CA 95054


    Original     		PDF AN1040 GPS RECEIVER L10 gps l10 AN1040 UPB1004 gps architecture GPS2000 J2-C12 schematic diagram receiver satellite SSB Receiver UPB1007K

    ic isl 887

    Abstract: 2SC5508 NE3514 SW SPDT NE3515S02 NE5510279A NESG2031M05 PG2179 NE3509M04 NE3517S03
    Text: RF & マイクロ波デバイス システムブロック www.renesas.com 2010.04 目 次 1. はじめに •··········································································································································· 3


    Original     		PDF PA86x PG2158T5K PC3218T5Y NES1823M-45, NES1823M-180, NES1823M-240, NES1823S-45, NES1823S-90 R09CA0001JJ0100 PX10020JJ42V0PF ic isl 887 2SC5508 NE3514 SW SPDT NE3515S02 NE5510279A NESG2031M05 PG2179 NE3509M04 NE3517S03

    2SK2396A

    Abstract: NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 k2396 K2597 Marking Code SAW MOS transistor
    Text: SILICON MICROWAVE SEMICONDUCTORS Silicon discrete, Silicon MMIC Dual gate GaAs FET SELECTION GUIDE 1999/2000 6th Edition [MEMO] 2 Selection Guide P10100EJ6V0SG00 • The information in this document is based on documents issued in October,1999 at the latest. The


    Original     		PDF P10100EJ6V0SG00 2SK2396A NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 k2396 K2597 Marking Code SAW MOS transistor

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NEC NPN SILICON HIGH FREQUENCY TRANSISTOR NE661M04 FEATURES HIGH G AIN BANDW IDTH: f r = 25 GHz HIGH PO W ER GAIN: IS2 1 EI2 = 17 dB TYP at 2 GHz LOW NO ISE FIGURE: NF = 1.2 dB at 2 GHz HIG H M AXIM UM STABLE GAIN: 22 dB @ 2 GHz NEW LOW PRO FILE M04 PACKAGE:


    OCR Scan     		PDF NE661M04 T-343 E661M NE661M NE661M04 NE661M04-T2