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    NE02112 Search Results

    NE02112 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    NE02112 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    NE02112 NEC 4.5 GHz, 25 V, NPN silicon high frequency transistor Scan PDF

    NE02112 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC3355 SPICE MODEL

    Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
    Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness


    Original
    PDF F2002: F2003: F2004: 2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


    OCR Scan
    PDF AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720

    NE02136

    Abstract: 2SC2570 NE02135 equivalent 2sc2570 transistor NE02103 k427 2SC1560 2sc2351 equivalent LM5741 GHZ micro-X Package
    Text: N E C / 1SE D CALIFORNIA r - 3 / '/ 5 b427414 000137S 1 NPN SILICON HIGH FREQUENCY TRANSISTOR T '3 i- I 7 NE021 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH INSERTION GAIN: 18.5 dB at 500 MHz The NE021 series of NPN silicon transistors provides eco­


    OCR Scan
    PDF b427414 000137S NE021 3l-17 NE02136 2SC2570 NE02135 equivalent 2sc2570 transistor NE02103 k427 2SC1560 2sc2351 equivalent LM5741 GHZ micro-X Package

    2SC2570

    Abstract: 2sc2570 transistor transistor 2sc2570 NE02103 NE02133 2sc1560 ic 2SC2570 NE02132 NE02100 NE02135
    Text: NEC/ bM27414 0DDB354 SB? « N E C C 5bE D CALIFORNIA NEC T 3 V -2 3 NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH INSERTION GAIN: 18.5 dB at 500 MHz The NE021 series of NPN silicon transistors provides eco­


    OCR Scan
    PDF bM27414 QDDB354 T3V-23 NE021 2SC2570 2sc2570 transistor transistor 2sc2570 NE02103 NE02133 2sc1560 ic 2SC2570 NE02132 NE02100 NE02135