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    NAND FLASH MEMORY SAMSUNG Search Results

    NAND FLASH MEMORY SAMSUNG Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD28F010-20/B Rochester Electronics LLC Flash Visit Rochester Electronics LLC Buy
    MD2114A-5 Rochester Electronics LLC SRAM Visit Rochester Electronics LLC Buy
    54H30J Rochester Electronics LLC NAND Gate Visit Rochester Electronics LLC Buy
    DM74LS22J Rochester Electronics LLC DM74LS22 - NAND Logic Gate Visit Rochester Electronics LLC Buy
    MC28F008-10/B Rochester Electronics LLC EEPROM, Visit Rochester Electronics LLC Buy

    NAND FLASH MEMORY SAMSUNG Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K5W1G

    Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION


    Original     		PDF BR-07-ALL-001 K5W1G KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G

    nand512w3a2dn6

    Abstract: NAND02GW3B2DZA6 NAND512R3A2DZA6E NAND512W3A2DN6E NAND01GW3B2CZA6E VFBGA63 nand02gw3b2dn6e NAND256W3A0BE06 NAND01GW3B2CN6E NAND02GW3B2DZA6E
    Text: product line card Numonyx NAND flash memory Numonyx® NAND flash memory A broad offering of discrete parts to meet a variety of application requirements PRODUCT overview Density Part Number Density NAND Family Voltage Bus Width - Flash Package Type Package Dimension


    Original     		PDF NAND128W3A2BN6E TSOP48 12x20mm NAND128W3A0BN6E NAND128W3A2BDI6 NAND256W3A2BN6E nand512w3a2dn6 NAND02GW3B2DZA6 NAND512R3A2DZA6E NAND512W3A2DN6E NAND01GW3B2CZA6E VFBGA63 nand02gw3b2dn6e NAND256W3A0BE06 NAND01GW3B2CN6E NAND02GW3B2DZA6E

    MT29F2G16AABWP-ET

    Abstract: nand flash K9F2G08U0M at91sam9, nand flash, algorithm 6255B AT91SAM9 AT91SAM9260 AT91SAM9261 VOICE RECORDER ARM Source code 37MB
    Text: NAND Flash Support in AT91SAM9 Microcontrollers 1. Scope The purpose of this application note is to introduce the NAND Flash technology and to describe how to interface NAND Flash memory to Atmel AT91SAM9 ARM® Thumb®based Microcontrollers that do not feature a NAND Flash Controller. The NAND Flash


    Original     		PDF AT91SAM9 AT91SAM9 6255B 26-Jun-09 MT29F2G16AABWP-ET nand flash K9F2G08U0M at91sam9, nand flash, algorithm AT91SAM9260 AT91SAM9261 VOICE RECORDER ARM Source code 37MB

    NAND Flash AT91 ARM

    Abstract: 0x00050005 6132 SRAM nand flash 64 MB AT91SAM MT29F2G16AABWP-ET AT91SAM9260 bad block NAND FLASH Controller Atmel smc sram
    Text: NAND Flash Support in AT91SAM Microcontrollers 1. Scope The purpose of this application note is to introduce the NAND Flash technology and to describe how to interface NAND Flash memory to Atmel AT91SAM ARM® Thumb®based Microcontrollers that do not feature a NAND Flash Controller. The NAND Flash


    Original     		PDF AT91SAM AT91SAM 09-Oct-06 NAND Flash AT91 ARM 0x00050005 6132 SRAM nand flash 64 MB MT29F2G16AABWP-ET AT91SAM9260 bad block NAND FLASH Controller Atmel smc sram

    KLM8G2FE3B

    Abstract: klm8g samsung eMMC 4.5 TLC nand samsung tlc nand flash KLM4G 153 ball eMMC memory SAMSUNG emmc klm8g2 Samsung KLMBG4GE2A
    Text: Samsung eMMC Managed NAND Flash memory solution supports mobile applications FBGA QDP Package BROCHURE Efficiency, reduced costs and quicker time to market Expand device development with capable memory solutions Simplify mass storage designs Conventional NAND Flash memory can be challenging to


    Original     		PDF

    32Gb Nand flash toshiba

    Abstract: Micron ONFI 2.2 bch verilog code SLC nand hamming code 512 bytes block diagram code hamming using vhdl vhdl code hamming ecc pdf of 32Gb Nand flash memory by toshiba verilog code for amba ahb and ocp network interface flash controller verilog code hamming code 512 bytes
    Text: Support for High Speed NAND Flash memories up to 200MB/s NANDFLASHCTRL NAND Flash Memory Controller Megafunction Implements a flexible ONFI 2.2 compliant controller for NAND flash memory devices from 2 Gb and higher (single device). The full-featured core efficiently manages the read/write interactions between a master


    Original     		PDF 200MB/s) 32Gb Nand flash toshiba Micron ONFI 2.2 bch verilog code SLC nand hamming code 512 bytes block diagram code hamming using vhdl vhdl code hamming ecc pdf of 32Gb Nand flash memory by toshiba verilog code for amba ahb and ocp network interface flash controller verilog code hamming code 512 bytes

    K9K1G08U0B

    Abstract: K9K1G08B0B K9K1G08R0B 528-byte 3310H
    Text: K9K1G08R0B K9K1G08B0B K9K1G08U0B Advance FLASH MEMORY Document Title 128M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note 1 Program/Erase Characteristics is added( page 13 ) 2. NAND Flash Technical Notes is changed.


    Original     		PDF K9K1G08R0B K9K1G08B0B K9K1G08U0B K9K1G08U0B K9K1G08B0B K9K1G08R0B 528-byte 3310H

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    K9F1208B0B

    Abstract: K9F1208B0B-G K9F1208B0B-Y K9F1208R0B K9F1208R0B-G K9F1208U0B K9F1208U0B-G K9F1208U0B-V K9F1208U0B-Y K9F1208U0BYCB0
    Text: K9F1208R0B K9F1208B0B K9F1208U0B FLASH MEMORY Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note 1 Program/Erase Characteristics is added( page 14 ) 2. NAND Flash Technical Notes is changed.


    Original     		PDF K9F1208R0B K9F1208B0B K9F1208U0B K9F1208B0B K9F1208B0B-G K9F1208B0B-Y K9F1208R0B K9F1208R0B-G K9F1208U0B K9F1208U0B-G K9F1208U0B-V K9F1208U0B-Y K9F1208U0BYCB0

    K9F1208U0B-YCB0

    Abstract: 8bit nand flash K9F1208U0B-G SAMSUNG K9F1208U0B K9F1208R0B K9F1208R0B-G K9F1208B0B K9F1208B0B-G K9F1208B0B-Y K9F1208U0B
    Text: K9F1208R0B K9F1208B0B K9F1208U0B FLASH MEMORY Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note 1 Program/Erase Characteristics is added( page 14 ) 2. NAND Flash Technical Notes is changed.


    Original     		PDF K9F1208R0B K9F1208B0B K9F1208U0B K9F1208U0B-YCB0 8bit nand flash K9F1208U0B-G SAMSUNG K9F1208U0B K9F1208R0B K9F1208R0B-G K9F1208B0B K9F1208B0B-G K9F1208B0B-Y K9F1208U0B

    Untitled

    Abstract: No abstract text available
    Text: K9F1208R0B K9F1208B0B K9F1208U0B Preliminary FLASH MEMORY Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note 1 Program/Erase Characteristics is added( page 14 ) 2. NAND Flash Technical Notes is changed.


    Original     		PDF K9F1208R0B K9F1208B0B K9F1208U0B

    SAMSUNG K9F1208U0B

    Abstract: K9F1208* technical K9F1208B0B K9F1208B0B-G K9F1208B0B-Y K9F1208R0B K9F1208R0B-G K9F1208U0B K9F1208U0B-G K9F1208U0B-V
    Text: K9F1208R0B K9F1208B0B K9F1208U0B Preliminary FLASH MEMORY Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note 1 Program/Erase Characteristics is added( page 14 ) 2. NAND Flash Technical Notes is changed.


    Original     		PDF K9F1208R0B K9F1208B0B K9F1208U0B SAMSUNG K9F1208U0B K9F1208* technical K9F1208B0B K9F1208B0B-G K9F1208B0B-Y K9F1208R0B K9F1208R0B-G K9F1208U0B K9F1208U0B-G K9F1208U0B-V

    K9K1G08X0B

    Abstract: K9K1G08U0B K9K1G08B0B K9K1G08R0B ci 4093
    Text: K9K1G08R0B K9K1G08B0B K9K1G08U0B FLASH MEMORY Document Title 128M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note 1 Program/Erase Characteristics is added( page 13 ) 2. NAND Flash Technical Notes is changed.


    Original     		PDF K9K1G08R0B K9K1G08B0B K9K1G08U0B K9K1G08X0B K9K1G08U0B K9K1G08B0B K9K1G08R0B ci 4093

    K9K1G08U0B

    Abstract: No abstract text available
    Text: K9K1G08R0B K9K1G08B0B K9K1G08U0B Preliminary FLASH MEMORY Document Title 128M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note 1 Program/Erase Characteristics is added( page 13 ) 2. NAND Flash Technical Notes is changed.


    Original     		PDF K9K1G08R0B K9K1G08B0B K9K1G08U0B K9K1G08U0B

    Untitled

    Abstract: No abstract text available
    Text: PREDVAN FLASH MEMORY DIE KM29U128K1 16M x 8 Bit NAND Flash Memory FEATURES ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü GENERAL DESCRIPTION The KM29U128K1 is an 16M 16,772,216 x8bit Die of NAND Flash Memory with a spare 512K(524,288)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass


    Original     		PDF KM29U128K1 KM29U128K1 528byte 528byte.

    LCMXO2-1200HC-4TG144C

    Abstract: flash controller verilog code NOR Flash ecc NAND FLASH Controller verilog code for Flash controller samsung nand flash vhdl code ram row column RD1055 flash read verilog RNB CE
    Text: NAND Flash Controller November 2010 Reference Design RD1055 Introduction Flash memory, whether it is in NOR or NAND in structure, is a non-volatile memory that is used to replace traditional EEPROM and hard disks for its low cost and versatility. Because of the difference in the structure of interconnection of the memory cells, NOR Flash is known for its random access capability, while the NAND Flash is known


    Original     		PDF RD1055 LFXP2-5E-7M132C, 1-800-LATTICE LCMXO2-1200HC-4TG144C flash controller verilog code NOR Flash ecc NAND FLASH Controller verilog code for Flash controller samsung nand flash vhdl code ram row column RD1055 flash read verilog RNB CE

    flash controller verilog code

    Abstract: verilog code hamming hamming code FPGA hamming code 512 bytes flash hamming ecc Micron NAND flash controller verilog code for Flash controller verilog code for NOR Flash controller micron ecc nand A3P125
    Text: IWave Meter C om panionC ore Embedding Intelligence Overview iW-NAND Flash Controllerprovides an easy interface to access NAND Flash Memory devices. This controller supports upto 32 GB NAND Flash memory. IW-NAND Flash Controller Features * * * * * * * * *


    OCR Scan     		PDF

    km29v040t

    Abstract: yd 4145 km29v040 V040T
    Text: KM29V040T Flash ELECTRONICS 512Kx8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Power Supply The KM29V040T is a 512Kx8bit NAND Flash memory. • Organization - Memory Cell Array Its NAND cell structure provides the most cost-effective


    OCR Scan     		PDF KM29V040T 512Kx8 500us 400mil/0 KM29V040T 512Kx8bit KM29V040 yd 4145 V040T

    KM29N040T

    Abstract: 741 IC data sheet bhrb data sheet IC 741 KM29N04 samsung flash bad block mapping
    Text: KM29N040T ELECTRONICS Flash 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Power Supply The KM29N040T is a 512Kx8bit NAND Flash memory. • Organization - Memory Cell Array - Data Register Its NAND cell structure provides the most cost-effective


    OCR Scan     		PDF KM29N040T 512Kx8 500us 400mil/0 KM29N040T 512Kx8bit KM29N040 KM29N040T) 7TL4142 741 IC data sheet bhrb data sheet IC 741 KM29N04 samsung flash bad block mapping

    K9HCG08U5M

    Abstract: K9WBG08U1M K9LAG08U0M-PCB0 KMAFN0000M KMBGN0000A K9MDG08U5M-PCB0 K4M56323PI MCCOE32GQMPQ-M K4M56163PI movinand
    Text: SAMSUNG Mobile Memory C ontents NAND Flash NOR Flash One NAND Mobile DRAM movi NAND™ SSD Multi Media Card Living in NAND Flash world Living in the stage of 20GB memory after passing through the dark-age of 1GB in 2002, the mobile & consumer electronics now start to feel the needs


    OCR Scan     		PDF 120GB 128MB 256MB 128MB 512MB K9HCG08U5M K9WBG08U1M K9LAG08U0M-PCB0 KMAFN0000M KMBGN0000A K9MDG08U5M-PCB0 K4M56323PI MCCOE32GQMPQ-M K4M56163PI movinand

    Untitled

    Abstract: No abstract text available
    Text: KM29N040T Flash ELECTRONICS 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Power Supply The KM29N040T is a 512Kx8bit NAND Flash memory. Its NAND cell structure provides the most cost-effective solution for Digital Audio Recoding. A program


    OCR Scan     		PDF KM29N040T 512Kx8Bit KM29N040T 32-byte 500us 120ns/byte. KM29N040

    Untitled

    Abstract: No abstract text available
    Text: KM29V040T ELECTRONICS Flash 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Power Supply The KM29V040T is a 512Kx8bit NAND Flash memory. Its NAND cell structure provides the most cost-effective solution for Digital Audio Recoding. A program


    OCR Scan     		PDF KM29V040T 512Kx8Bit KM29V040T 32-byte 500us 120ns/byte. KM29V040

    3171S

    Abstract: No abstract text available
    Text: KM29V16000ARS Flash ELECTRONICS 2 M x 8 B i t NAND Flash Memory GENERAL DESCRIPTION FEATURES The KM29V16000ATS/RS is a 2M 2,097,152 x8 bit NAND • Single 3.3 - volt Supply • Organization - Memory Cell Array : (2M +64K)bit - Data Register Flash memory with a spare 64K(65,536)x8 bit. Its NAND


    OCR Scan     		PDF KM29V16000ARS KM29V16000ATS/RS 264-byte 250fjs 003172R -TSOP2-400F -TSOP2-400R 3171S

    Z359

    Abstract: rb414 7-it4142
    Text: KM 29V 3 2 00 0 T S Flash ELEC TRO NIC S 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 4M +128K Dit x 8bit The KM29V32000TS/RS is a 4M(4,194,304)xB bit NAND Flash memory with a spare 128K(131,072)x8 bit. Its NAND


    OCR Scan     		PDF KM29V32000TS 250us Z359 rb414 7-it4142