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    N82S25 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    N82S25 Signetics 64-Bit Bipolar Scratch PAD Memory (16 x 4) Original PDF
    N82S25 Signetics Bipolar Memory IC Data Book 1982 Scan PDF
    N82S25 Signetics Integrated Circuits Catalogue 1978/79 Scan PDF
    N82S25B Unknown IC Datasheet (Short Description and Cross Reference Only) Scan PDF
    N82S25F Unknown IC Datasheet (Short Description and Cross Reference Only) Scan PDF
    N82S25F Signetics Integrated Circuits Catalogue 1978/79 Scan PDF
    N82S25N Unknown IC Datasheet (Short Description and Cross Reference Only) Scan PDF
    N82S25N Signetics Integrated Circuits Catalogue 1978/79 Scan PDF

    N82S25 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    ay-5-1012

    Abstract: ali m 3329 PROCESSOR ALI 3329 ali 3329 b ali 3329 SN74188 sn74s188 str 52100 SN7452 replacement of bel 187 transistor
    Text: GENERAL INFORMATION lie of Contents • Alphanumeric Index • Selection Guides • Glossary INTERCHANGEABiliTY GUIDE MOS MEMORIES TTL MEMORIES ECl MEMORIES MICROPROCESSOR SUMMARY 38510/MACH IV PROCUREMENT SPECIFICATION JAN Mll-M-38510 INTEGRATED CIRCUITS


    Original     		PDF 38510/MACH Mll-M-38510 Z501300 Z501200 Z501201 Z012510 ZOl1510 ay-5-1012 ali m 3329 PROCESSOR ALI 3329 ali 3329 b ali 3329 SN74188 sn74s188 str 52100 SN7452 replacement of bel 187 transistor

    transistor C3866

    Abstract: Zener PH SEC E13009 ups circuit schematic diagram 1000w E13007 2 E13007 C3866 power transistor texas ttl 74L505 Transistor C3246
    Text: BID CΚΤ DOLLY L IST L OGO LIST SA F E TY & RELIA ΒL TY ΤΕΚ PIN SYSTE M DIGITA L IC's MEMORIES, MOS CMOS .EC L , TT L MICR OP R OC E SSOR SPE CIA L FUN CTION IC's DIGITAL l LINE AR K ARR AYS LIN E A R IC's (PUR CH ) ΤΕΚ-MADE IC's IC's INDEX (COL ORE D PGS)


    Original     		PDF

    SIGNETICS 268

    Abstract: Signetics ITT gemini 24 SIGNETICS N82S25 N3101 N74S189 N74S89 ifr 540 gemini
    Text: Signetics Memories - Bipolar Ram N82S25, N3101 A , N74S89 and N 74S189 Series Bipolar Scratch Pad Mem ory 1 6 x 4 Continued 64 Bit BLOCK D I A G R A M G N D = (8 ) ( ) * DAT* IN *N D o u t P in n u m b e r PLEA SE Q U O TE STOCK NO. A N D M A N U F A C T U R E R S P A R T NO. WHEN O R DERIN G


    OCR Scan     		PDF N82S25, N3101 N74S89 N74S189 SIGNETICS 268 Signetics ITT gemini 24 SIGNETICS N82S25 ifr 540 gemini

    82S25

    Abstract: N82S25N 74S189 N82S25 N3101 N3101A N74S189 N74S89 N82S25F
    Text: Signetics M em ories - Bipolar Ram N82S25, N3101 A, N74S89 and N74S189 Series — 64 Bit Bipolar Scratch Pad Memory 16 x 4 CONNECTION DIAGRAM GENERAL DESCRIPTION This fam ily of Read/Write Random Access Memories is ideal for use in scratch pad and high-speed buffer memory


    OCR Scan     		PDF N82S25, N3101 N74S89 N74S189 82S25 N82S25N 74S189 N82S25 N3101A N82S25F

    74S301

    Abstract: TBP28S42 SIGNETICS prom 1024x8 PROM n82s123 82LS181 N82LS181 S82LS181 N82S141 TBP28P86
    Text: MAY 1982 BIPOLAR MEMORY DIVISION 8 1 9 2 -BIT BIPOLAR P R O M 1 0 2 4 X 8 DESCRIPTION The 82LS181 is field programmable, which mea ns that custom patterns are immediately available by following the fusing procedure given in this data manual. The 82LS18I is


    OCR Scan     		PDF 8192-BIT 1024x8) 82LS181 82LS181 82LS18I N82LS181, n82hs185 n82s25 n82s16 74S301 TBP28S42 SIGNETICS prom 1024x8 PROM n82s123 N82LS181 S82LS181 N82S141 TBP28P86

    74s* programming

    Abstract: N82S16 prom 256x4 bit MCM10149 MCM7620 MCM7621 MCM7641C MCM7643C MCM7681C N82HS137
    Text: MAY 1982 BIPOLAR MEMORY DIVISION BIPOLAR M EM ORY CROSS REFERENCE BIPOLAR M EM O RY CROSS REFERENCE Continued MOTOROLA MCM10149 MCM7620 MCM7621 MCM7643C MCM7641C MCM7681C MCM82708C MCM7685C 4064 4256 10422 10470 SIGNETICS T.l. SIGNETICS *10149 N82S130 N82S131


    OCR Scan     		PDF MCM10149 MCM7620 N82S130 MCM7621 N82S131 MCM7643C N82S137 N82HS137 MCM7641C N82S141 74s* programming N82S16 prom 256x4 bit MCM10149 MCM7681C N82HS137

    Untitled

    Abstract: No abstract text available
    Text: 82S25-F.N • 3101 A -F.N • 54/74S89-F.N • 54/74S189-F.N DESCRIPTION APPLICATIONS T his fa m ily o f R ead/W rite R andom A ccess M em ories is ideal fo r use in scra tch pad and h igh-speed b u ffe r m em ory ap p lic a tio n s . • Scratch pad memory


    OCR Scan     		PDF 82S25-F 54/74S89-F 54/74S189-F 101A-F

    74s188 programming

    Abstract: 74S471 N82S06 74S470 dip18 package str 52100 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 74S472 PROM PROGRAMMING 8080a 74S287 programming instructions
    Text: The E ngineering Staff of TEXAS INSTRUMENTS INCORPORATED Semiconductor Memory Data Book y for \ T exas In Design Engineers s t r u m e n t s >le of Contents • Alphanumeric Index • GENERAL INFORMATION Selection Guides • Glossary INTERCHANGEABILITY GUIDE


    OCR Scan     		PDF 38510/MACH MIL-M-38510 74s188 programming 74S471 N82S06 74S470 dip18 package str 52100 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 74S472 PROM PROGRAMMING 8080a 74S287 programming instructions

    6301-1 prom

    Abstract: 3622 prom mmi 3601 PROM 3601 intel 3601 PROM PROM intel 3601 9344C N82S141 74S189 N82S137
    Text: BIPOLAR MEMORY DIVISION MAY 1982 8192-BIT BIPOLAR PROM 1024 x 8 82HS181 /82HS181A (T.S.) DESCRIPTION FEATURES The 82HS181 is fie ld p rog ra m m a b le , w h ich m eans th a t cu s to m p a tte rn s are im ­ m e d ia te ly a va ila b le by fo llo w in g th e fu s in g


    OCR Scan     		PDF 8192-BIT 1024x8) 82HS181/82HS181A 82HS181 N82HS185 N82S25 N82S16 TBP18SA030J, 6301-1 prom 3622 prom mmi 3601 PROM 3601 intel 3601 PROM PROM intel 3601 9344C N82S141 74S189 N82S137

    N82S191

    Abstract: 6301-1 prom 82S191 SIGNETICS prom 6331-1 PROM intel 3601 SIGNETICS prom n82s141 74S200 HM76161-5 93427C
    Text: MAY 1982 BIPOLAR MEMORY DIVISION 16,384-BIT BIPOLAR PROM 2048 X 8 DESCRIPTION The 82S191 Is field programmable, which means that custom patterns are Immediate­ ly available by following the fusing proce­ dure given in this data manual. The 82S191 is supplied with all outputs at a logical low.


    OCR Scan     		PDF 384-BIT 2048x8) 82S191 82S191 N82S191 N82HS185 N82S25 N82S16 6301-1 prom SIGNETICS prom 6331-1 PROM intel 3601 SIGNETICS prom n82s141 74S200 HM76161-5 93427C

    B147

    Abstract: B237 ITT301 N74S00 6164 ram memory 74S189 CD 5888 md 8243 N74S00N N74S02N
    Text: Signetics Integrated Circuits Schottky T T L Schottky T T L 74S Series Introduction S c h o ttk y T T L uses a d io d e cla m p design to ensure th e highest speed possible at T T L lo g ic levels ty p ic a lly 3ns gate p ro p a g a tio n de la y and 9 0 M H z f lip f lo p to g gle rate. H o w ever th e y rem ain c o m p a tib le w ith


    OCR Scan     		PDF N74S00N 55376D N74S02N 55377B N74S03N 55378X N74S04N 55379R N74S05N 5380A B147 B237 ITT301 N74S00 6164 ram memory 74S189 CD 5888 md 8243

    N82S141

    Abstract: 82HS191 MCM10149 N82S137 74S301 N82LS181 CE23 MCM7620 N82HS191 N82S130
    Text: MAY 1982 BIPOLAR M EM O RY DIVISION 16,384-BIT BIPOLAR PROM 2 0 4 8 x 8 _ 82HS191 (T.S.) DESCRIPTION PIN CONFIGURATIONS T h e 82H S 191 is fie ld p r o g r a m m a b le , w h ic h m e a n s th a t c u s to m p a tte rn s a re im m e d ia te ­


    OCR Scan     		PDF 384-BIT 2048x8) 82HS191 82HS191 The82HS191 N82HS191, N82HS185 N82S25 N82S16 N82S141 MCM10149 N82S137 74S301 N82LS181 CE23 MCM7620 N82HS191 N82S130

    SIGNETICS

    Abstract: N82S137 signetics bipolar memory cross reference N82S191 n82s25 TBP28P86 74S289 N82S141 N82S129 TBP24S41
    Text: MAY 1982 BIPOLAR MEMORY DIVISION BIPOLAR MEMORY CROSS REFERENCE BIPOLAR MEMORY CROSS REFERENCE Continued MOTOROLA MCM10149 MCM7620 MCM7621 MCM7643C MCM7641C MCM7681C MCM82708C MCM7685C 4064 4256 10422 10470 SIG NETICS T.l. SIG NETICS *10149 N82S130 N82S131


    OCR Scan     		PDF MCM10149 MCM7620 N82S130 MCM7621 N82S131 MCM7643C N82S137 N82HS137 MCM7641C N82S141 SIGNETICS N82S137 signetics bipolar memory cross reference N82S191 n82s25 TBP28P86 74S289 N82S141 N82S129 TBP24S41

    82S25

    Abstract: N74S189N N3101A N74S189 N82S25 N82S25N S54S189 S82S25
    Text: BIPOLAR MEMORY DIVISION MAY 1982 64-BIT BIPOLAR SCRATCH PAD MEMORY 16x4 82S25 (O.C.), 3101A (O.G.), 54/74S189 (T.S.) DESCRIPTION APPLICATIONS T h is fa m ily o f R ead/W rite R andom Access M em ories is ideal fo r use in scra tch pad and high-speed b u ffe r m em ory a pp licatio n s.


    OCR Scan     		PDF 64-BIT 82S25 54/74S189 N74S189N, N82S25N, S54S189 82S25, 82S25 N74S189N N3101A N74S189 N82S25 N82S25N S54S189 S82S25

    N82S141

    Abstract: 93427c 6331-1 N82S137 mmi 6301-1 74S200 N82S129 74S206 MMI 6341-1 AM27S29C
    Text: MAY 1982 BIPOLAR MEMORY DIVISION 8 1 92-BIT BIPOLAR PROM 2 0 4 8 x 4 _ 82HS485/82HS185A (T.S.) DESCRIPTION FEATURES The 82HS185 is fie ld program m able, vihich means th a t cu sto m patte rn s are im m ed iate ­ ly available by fo llo w in g th e fu sin g p roce ­


    OCR Scan     		PDF 8192-BIT 2048x4) 82HS185/82HS185A 82HS185 N82HS185 N82S25 N82S16 TBP18SA030J, N82S141 93427c 6331-1 N82S137 mmi 6301-1 74S200 N82S129 74S206 MMI 6341-1 AM27S29C

    THERMISTORS nsp 037

    Abstract: Thyristor TAG 9118 ICA 0726 0148 Transformer a1273 y k transistor AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032
    Text: INDEX OF COMPONENTS A Section/Page No. A.C. Adaptor. Adaptor Kits BNC e tc . Adhesive Tapes. Adhesives, Various. Aerosols.


    OCR Scan     		PDF 200X300X360m THERMISTORS nsp 037 Thyristor TAG 9118 ICA 0726 0148 Transformer a1273 y k transistor AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032

    TCA965 equivalent

    Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
    Text: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated


    OCR Scan     		PDF DG211. DG300 DG308 DG211 TCA965 equivalent ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401

    74S189

    Abstract: N3101AN N74S189D N3101
    Text: Philips Components-Signetics Document No. 853-0152 8 2 S 2 5 / 3 1 0 1 A ECN No. 86487 / 7 4 S 1 8 9 64-bit TTL bipolar RAM Date of Issue November 11, 1986 Status Product Specification Memory Products PIN CONFIGURATION DESCRIPTION APPLICATIONS This family of Read/Write Random


    OCR Scan     		PDF 64-bit 82S25 74S189 74S189 N3101AN N74S189D N3101

    74S189

    Abstract: 82S25 N3101A N74S189 N74S189N N82S25 N82S25N S54S189 S82S25
    Text: BIPOLAR M EM O R Y DIVISION M AY 1982 64-BIT BIPOLAR SCRATCH PAD MEMORY 16x4 82S25 (O.C.), 3101A (O.G.), 54/74S189 (T.S.) DESCRIPTION APPLICATIONS T h is fa m ily o f R e a d /W rite R a n d o m A c c e s s • • • • M e m o rie s is id e a l fo r u se in s c r a tc h p a d a n d


    OCR Scan     		PDF 64-BIT 82S25 54/74S189 N74S189N, N82S25N, S54S189 82S25 74S189 N3101A N74S189 N74S189N N82S25 N82S25N S82S25

    N82S181

    Abstract: 82S181 N82S141 74S200 mmi 3601 6331-1 prom tbp24sa10 93427C n82s147 MMI 6330
    Text: MAY 1982 BIPOLAR MEMORY DIVISION 8192-BIT BIPOLAR PROM 1024 x 8 DESCRIPTION FEATURES The 82S180 and 82S181 are field program­ mable, which means that custom patterns are immediately available by follow ing the fusing procedure given in this data manual.


    OCR Scan     		PDF 8192-BIT 1024x8) 82S180 /82S181 82S180 82S181 N82S181 N82S141 74S200 mmi 3601 6331-1 prom tbp24sa10 93427C n82s147 MMI 6330

    N82S131

    Abstract: N82S141 n82s123 MCM10149 MCM7620 MCM7621 MCM7641C MCM7643C MCM7681C N82HS137
    Text: MAY 1982 BIPOLAR MEMORY DIVISION BIPOLAR MEMORY CROSS REFERENCE BIPOLAR M EM O RY CROSS REFERENCE Continued MOTOROLA MCM10149 MCM7620 MCM7621 MCM7643C MCM7641C MCM7681C MCM82708C MCM7685C 4064 4256 10422 10470 SIG NETICS T.l. SIG NETICS *10149 N82S130 N82S131


    OCR Scan     		PDF MCM10149 MCM7620 N82S130 MCM7621 N82S131 MCM7643C N82S137 N82HS137 MCM7641C N82S141 N82S131 N82S141 n82s123 MCM10149 MCM7681C N82HS137

    transistor cross reference

    Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
    Text: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC


    OCR Scan     		PDF

    GFB7400D

    Abstract: FEY101B TCA290A Rifa pmr 2026 EF184 ORP52 Mullard Mullard quick reference guide GZF1200 ITT A2610 YD 6409
    Text: AN INTRODUCTION TO: Cartwright ELECTRONIC COMPONENTS 517 LAWMOOR STREET DIXONS BLAZES INDUSTRIAL ESTATE GLASGOW G5 041-429 7771 Cartwright Electronic Components started trading in April, 1971 as the electronics division of John T. Cartwright & Sons ERD North Ltd . From very modest


    OCR Scan     		PDF