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    Signetics N82S16F

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    Bristol Electronics N82S16F 38
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    Signetics N82S16B

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    Quest Components N82S16B 106
    • 1 $14
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    • 100 $8.75
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    Signetics N82S167AN

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    Quest Components N82S167AN 19
    • 1 $13.7761
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    Signetics N82S16F/883C

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components N82S16F/883C 4
    • 1 $15.7
    • 10 $11.775
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    N82S16 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    N82S16 Signetics Bipolar Memory IC Data Book 1982 Scan PDF
    N82S16B Unknown IC Datasheet (Short Description and Cross Reference Only) Scan PDF
    N82S16F Signetics 256-Bit Bipolar RAM Original PDF
    N82S16F Unknown IC Datasheet (Short Description and Cross Reference Only) Scan PDF
    N82S16F Signetics Integrated Circuits Catalogue 1978/79 Scan PDF
    N82S16N Signetics 256-Bit Bipolar RAM Original PDF
    N82S16N Unknown IC Datasheet (Short Description and Cross Reference Only) Scan PDF
    N82S16N Signetics Integrated Circuits Catalogue 1978/79 Scan PDF
    N82S16R Signetics 256-Bit Bipolar RAM Original PDF

    N82S16 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original
    PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    c5088 transistor

    Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


    Original
    PDF 1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N

    82S16

    Abstract: N82S16N N82S116N 82S17 "pin compatible" N82S16 82S17 N82S17 82S116 S82S16 N82S117F
    Text: Signetics Memories - Bipolar Ram N82S16, N82S116, N82S17, N82S117 - 2 5 6 Bit Ram 256 x 1 C O N N E C T IO N D IA G R A M G E N E R A L D E S C R IP T IO N T he 8 2 S 1 6 / 1 16 and 8 2 S 1 7 / 1 17 are read/write m e m ory arrays w hich feature either open collector or -tri-state o utput optio ns


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    PDF N82S16, N82S116, N82S17, N82S117 82S16/116 82S17/117 25jiA 100juA 82S16 N82S16N N82S116N 82S17 "pin compatible" N82S16 82S17 N82S17 82S116 S82S16 N82S117F

    74S301

    Abstract: TBP28S42 SIGNETICS prom 1024x8 PROM n82s123 82LS181 N82LS181 S82LS181 N82S141 TBP28P86
    Text: MAY 1982 BIPOLAR MEMORY DIVISION 8 1 9 2 -BIT BIPOLAR P R O M 1 0 2 4 X 8 DESCRIPTION The 82LS181 is field programmable, which mea ns that custom patterns are immediately available by following the fusing procedure given in this data manual. The 82LS18I is


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    PDF 8192-BIT 1024x8) 82LS181 82LS181 82LS18I N82LS181, n82hs185 n82s25 n82s16 74S301 TBP28S42 SIGNETICS prom 1024x8 PROM n82s123 N82LS181 S82LS181 N82S141 TBP28P86

    82S16

    Abstract: 82S17 N82S16F N82S17F S82S16F S82S17F
    Text: M AY 1982 BIPOLAR M E M O R Y DIVISION 256-BIT BIPOLAR RAM 256 x 1 DESCRIPTION The 82S16 and 82S17 are R ea d /W rite m em ory a rrays w hich fe a tu re e ith e r open c o lle c to r or 3-sta te o u tp u t o p tio n s fo r o p ­ tim iz a tio n o f w ord e xp a n sio n in bused


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    PDF 256-BIT 82S16 /82S17 82S16 82S17 N82S16F N82S17F S82S16F S82S17F

    74s* programming

    Abstract: N82S16 prom 256x4 bit MCM10149 MCM7620 MCM7621 MCM7641C MCM7643C MCM7681C N82HS137
    Text: MAY 1982 BIPOLAR MEMORY DIVISION BIPOLAR M EM ORY CROSS REFERENCE BIPOLAR M EM O RY CROSS REFERENCE Continued MOTOROLA MCM10149 MCM7620 MCM7621 MCM7643C MCM7641C MCM7681C MCM82708C MCM7685C 4064 4256 10422 10470 SIGNETICS T.l. SIGNETICS *10149 N82S130 N82S131


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    PDF MCM10149 MCM7620 N82S130 MCM7621 N82S131 MCM7643C N82S137 N82HS137 MCM7641C N82S141 74s* programming N82S16 prom 256x4 bit MCM10149 MCM7681C N82HS137

    82S16

    Abstract: 82516 N82S16 82S17 N82S16F N82S17F S82S16F S82S17F 82S17 "pin compatible"
    Text: JANUARY 1983 BIPOLAR M EM O R Y DIVISION 256-BIT BIPOLAR RAM 256 X 1 DESCRIPTION T he 82S16 a n d 82S17 are R e a d /W rite m e m o ry a rra y s w h ic h fe a tu re e ith e r ope n c o lle c to r o r 3 -s ta te o u tp u t o p tio n s fo r o p ­ tim iz a tio n o f w o rd e x p a n s io n in b u s e d


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    PDF 256-BIT 82S16 /82S17 82S16 82S17 82516 N82S16 N82S16F N82S17F S82S16F S82S17F 82S17 "pin compatible"

    74s188 programming

    Abstract: 74S471 N82S06 74S470 dip18 package str 52100 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 74S472 PROM PROGRAMMING 8080a 74S287 programming instructions
    Text: The E ngineering Staff of TEXAS INSTRUMENTS INCORPORATED Semiconductor Memory Data Book y for \ T exas In Design Engineers s t r u m e n t s >le of Contents • Alphanumeric Index • GENERAL INFORMATION Selection Guides • Glossary INTERCHANGEABILITY GUIDE


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    PDF 38510/MACH MIL-M-38510 74s188 programming 74S471 N82S06 74S470 dip18 package str 52100 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 74S472 PROM PROGRAMMING 8080a 74S287 programming instructions

    om 322

    Abstract: 82s185 signetics handbook signetics military data handbook
    Text: Philips Components-Signetics Document No. 853-0131 ECN No. 86487 Date of Issue November 11,1986 Status Product Specification 82S185 8K-bit TTL bipolar PROM Memory Products PIN CONFIGURATION DESCRIPTION FEATURES The 82S185 is field programmable, which means that custom patterns are


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    PDF 82S185 82S185 82Sred om 322 signetics handbook signetics military data handbook

    6301-1 prom

    Abstract: 3622 prom mmi 3601 PROM 3601 intel 3601 PROM PROM intel 3601 9344C N82S141 74S189 N82S137
    Text: BIPOLAR MEMORY DIVISION MAY 1982 8192-BIT BIPOLAR PROM 1024 x 8 82HS181 /82HS181A (T.S.) DESCRIPTION FEATURES The 82HS181 is fie ld p rog ra m m a b le , w h ich m eans th a t cu s to m p a tte rn s are im ­ m e d ia te ly a va ila b le by fo llo w in g th e fu s in g


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    PDF 8192-BIT 1024x8) 82HS181/82HS181A 82HS181 N82HS185 N82S25 N82S16 TBP18SA030J, 6301-1 prom 3622 prom mmi 3601 PROM 3601 intel 3601 PROM PROM intel 3601 9344C N82S141 74S189 N82S137

    N82S191

    Abstract: 6301-1 prom 82S191 SIGNETICS prom 6331-1 PROM intel 3601 SIGNETICS prom n82s141 74S200 HM76161-5 93427C
    Text: MAY 1982 BIPOLAR MEMORY DIVISION 16,384-BIT BIPOLAR PROM 2048 X 8 DESCRIPTION The 82S191 Is field programmable, which means that custom patterns are Immediate­ ly available by following the fusing proce­ dure given in this data manual. The 82S191 is supplied with all outputs at a logical low.


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    PDF 384-BIT 2048x8) 82S191 82S191 N82S191 N82HS185 N82S25 N82S16 6301-1 prom SIGNETICS prom 6331-1 PROM intel 3601 SIGNETICS prom n82s141 74S200 HM76161-5 93427C

    SIGNETICS

    Abstract: N82S137 signetics bipolar memory cross reference N82S191 n82s25 TBP28P86 74S289 N82S141 N82S129 TBP24S41
    Text: MAY 1982 BIPOLAR MEMORY DIVISION BIPOLAR MEMORY CROSS REFERENCE BIPOLAR MEMORY CROSS REFERENCE Continued MOTOROLA MCM10149 MCM7620 MCM7621 MCM7643C MCM7641C MCM7681C MCM82708C MCM7685C 4064 4256 10422 10470 SIG NETICS T.l. SIG NETICS *10149 N82S130 N82S131


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    PDF MCM10149 MCM7620 N82S130 MCM7621 N82S131 MCM7643C N82S137 N82HS137 MCM7641C N82S141 SIGNETICS N82S137 signetics bipolar memory cross reference N82S191 n82s25 TBP28P86 74S289 N82S141 N82S129 TBP24S41

    N82S141

    Abstract: 93427c 6331-1 N82S137 mmi 6301-1 74S200 N82S129 74S206 MMI 6341-1 AM27S29C
    Text: MAY 1982 BIPOLAR MEMORY DIVISION 8 1 92-BIT BIPOLAR PROM 2 0 4 8 x 4 _ 82HS485/82HS185A (T.S.) DESCRIPTION FEATURES The 82HS185 is fie ld program m able, vihich means th a t cu sto m patte rn s are im m ed iate ­ ly available by fo llo w in g th e fu sin g p roce ­


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    PDF 8192-BIT 2048x4) 82HS185/82HS185A 82HS185 N82HS185 N82S25 N82S16 TBP18SA030J, N82S141 93427c 6331-1 N82S137 mmi 6301-1 74S200 N82S129 74S206 MMI 6341-1 AM27S29C

    THERMISTORS nsp 037

    Abstract: Thyristor TAG 9118 ICA 0726 0148 Transformer a1273 y k transistor AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032
    Text: INDEX OF COMPONENTS A Section/Page No. A.C. Adaptor. Adaptor Kits BNC e tc . Adhesive Tapes. Adhesives, Various. Aerosols.


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    PDF 200X300X360m THERMISTORS nsp 037 Thyristor TAG 9118 ICA 0726 0148 Transformer a1273 y k transistor AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032

    TCA965 equivalent

    Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
    Text: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated


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    PDF DG211. DG300 DG308 DG211 TCA965 equivalent ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401

    N82S181

    Abstract: 82S181 N82S141 74S200 mmi 3601 6331-1 prom tbp24sa10 93427C n82s147 MMI 6330
    Text: MAY 1982 BIPOLAR MEMORY DIVISION 8192-BIT BIPOLAR PROM 1024 x 8 DESCRIPTION FEATURES The 82S180 and 82S181 are field program­ mable, which means that custom patterns are immediately available by follow ing the fusing procedure given in this data manual.


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    PDF 8192-BIT 1024x8) 82S180 /82S181 82S180 82S181 N82S181 N82S141 74S200 mmi 3601 6331-1 prom tbp24sa10 93427C n82s147 MMI 6330

    N82S131

    Abstract: N82S141 n82s123 MCM10149 MCM7620 MCM7621 MCM7641C MCM7643C MCM7681C N82HS137
    Text: MAY 1982 BIPOLAR MEMORY DIVISION BIPOLAR MEMORY CROSS REFERENCE BIPOLAR M EM O RY CROSS REFERENCE Continued MOTOROLA MCM10149 MCM7620 MCM7621 MCM7643C MCM7641C MCM7681C MCM82708C MCM7685C 4064 4256 10422 10470 SIG NETICS T.l. SIG NETICS *10149 N82S130 N82S131


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    PDF MCM10149 MCM7620 N82S130 MCM7621 N82S131 MCM7643C N82S137 N82HS137 MCM7641C N82S141 N82S131 N82S141 n82s123 MCM10149 MCM7681C N82HS137

    GFB7400D

    Abstract: FEY101B TCA290A Rifa pmr 2026 EF184 ORP52 Mullard Mullard quick reference guide GZF1200 ITT A2610 YD 6409
    Text: AN INTRODUCTION TO: Cartwright ELECTRONIC COMPONENTS 517 LAWMOOR STREET DIXONS BLAZES INDUSTRIAL ESTATE GLASGOW G5 041-429 7771 Cartwright Electronic Components started trading in April, 1971 as the electronics division of John T. Cartwright & Sons ERD North Ltd . From very modest


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    PDF

    signetics handbook

    Abstract: A4t 65 82S185
    Text: Philips Components-Signetics Document No. 8 5 3 -0 1 3 1 ECN No. 864 8 7 Date of Issue Novem ber 1 1 ,1 9 8 6 Status Product Specification 82S185 8K-bit TTL bipolar PROM Memory Products PIN CONFIGURATION DESCRIPTION FEATURES The 8 2S 1 85 is field programmable,


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    PDF 82S185 82S185 750il, signetics handbook A4t 65

    FZH 191

    Abstract: FZJ 101 FZH 261 fzh 111 fzh 171 FZH111 FZH 101 FZH 161 fzh 141 fzh 281
    Text: Elektronik. Wir bauen die Elemente. • VflLVO Professionelle Integrierte Schaltungen, Mikroprozessoren Produktprogramm Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die M ikroelektronik - entwickelt sich im m er rascher zum M otor für eine


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    PDF Integrie8510. FZH 191 FZJ 101 FZH 261 fzh 111 fzh 171 FZH111 FZH 101 FZH 161 fzh 141 fzh 281

    82S16

    Abstract: No abstract text available
    Text: Philips Components-Signetics Document No. 853-0141 ECN No. 86487 Date of Issue November 11, 1986 Status Product Specification 82S16 256-bit TTL bipolar RAM Memory Products PIN CONFIGURATION DESCRIPTION FEATURES The 82S16 is a Read/Write memory array which features 3-State outputs for


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    PDF 82S16 256-bit 82S16