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    N82S11 Search Results

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    N82S11 Price and Stock

    Signetics N82S115F

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics N82S115F 30 1
    • 1 $12.7237
    • 10 $9.5428
    • 100 $7.9523
    • 1000 $7.9523
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    Quest Components N82S115F 30
    • 1 $10.5
    • 10 $5.25
    • 100 $5.25
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    N82S115F 24
    • 1 $16.965
    • 10 $12.7238
    • 100 $11.4514
    • 1000 $11.4514
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    Philips Semiconductors N82S114

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    Bristol Electronics N82S114 3
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    Philips Semiconductors N82S11F/883B

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    Bristol Electronics N82S11F/883B 1
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    Philips Semiconductors N82S11F/883C

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    Bristol Electronics N82S11F/883C 1
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    Signetics N82S115N

    PROM, 512 x 8, 24 Pin, Plastic, DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components N82S115N 661
    • 1 $9
    • 10 $9
    • 100 $9
    • 1000 $3.3
    • 10000 $3.3
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    N82S115N 49
    • 1 $17.9282
    • 10 $15.9362
    • 100 $14.741
    • 1000 $14.741
    • 10000 $14.741
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    N82S115N 6
    • 1 $9
    • 10 $6.6
    • 100 $6.6
    • 1000 $6.6
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    Component Electronics, Inc N82S115N 28
    • 1 $11.54
    • 10 $11.54
    • 100 $8.65
    • 1000 $7.5
    • 10000 $7.5
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    N82S11 Datasheets (43)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    N82S110F Unknown IC Datasheet (Short Description and Cross Reference Only) Scan PDF
    N82S110F Signetics Integrated Circuits Catalogue 1978/79 Scan PDF
    N82S110N Unknown IC Datasheet (Short Description and Cross Reference Only) Scan PDF
    N82S111F Unknown IC Datasheet (Short Description and Cross Reference Only) Scan PDF
    N82S111F Signetics Integrated Circuits Catalogue 1978/79 Scan PDF
    N82S111N Unknown IC Datasheet (Short Description and Cross Reference Only) Scan PDF
    N82S112F Signetics 32-Bit Bipolar Multiport Memory Original PDF
    N82S112F Unknown IC Datasheet (Short Description and Cross Reference Only) Scan PDF
    N82S112F Signetics Integrated Circuits Catalogue 1978/79 Scan PDF
    N82S112N Signetics 32-Bit Bipolar Multiport Memory Original PDF
    N82S112N Unknown IC Datasheet (Short Description and Cross Reference Only) Scan PDF
    N82S112N Signetics Integrated Circuits Catalogue 1978/79 Scan PDF
    N82S114F Signetics 2048 / 4096 Bit Bipolar PROM Original PDF
    N82S114F Unknown IC Datasheet (Short Description and Cross Reference Only) Scan PDF
    N82S114F Signetics Integrated Circuits Catalogue 1978/79 Scan PDF
    N82S114I Unknown IC Datasheet (Short Description and Cross Reference Only) Scan PDF
    N82S114N Signetics 2048 / 4096 Bit Bipolar PROM Original PDF
    N82S114N Unknown IC Datasheet (Short Description and Cross Reference Only) Scan PDF
    N82S114N Signetics Integrated Circuits Catalogue 1978/79 Scan PDF
    N82S115 Signetics Bipolar Memory IC Data Book 1982 Scan PDF

    N82S11 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original
    PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    ay-5-1012

    Abstract: ali m 3329 PROCESSOR ALI 3329 ali 3329 b ali 3329 SN74188 sn74s188 str 52100 SN7452 replacement of bel 187 transistor
    Text: GENERAL INFORMATION lie of Contents • Alphanumeric Index • Selection Guides • Glossary INTERCHANGEABiliTY GUIDE MOS MEMORIES TTL MEMORIES ECl MEMORIES MICROPROCESSOR SUMMARY 38510/MACH IV PROCUREMENT SPECIFICATION JAN Mll-M-38510 INTEGRATED CIRCUITS


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    PDF 38510/MACH Mll-M-38510 Z501300 Z501200 Z501201 Z012510 ZOl1510 ay-5-1012 ali m 3329 PROCESSOR ALI 3329 ali 3329 b ali 3329 SN74188 sn74s188 str 52100 SN7452 replacement of bel 187 transistor

    82S114

    Abstract: N82S114N fet ifr 540 82S214 82S215 N82S114F S82S114F signetics 82S 56306E
    Text: S ig n e tic s Memories - Bipolar Proms C O N N E C T IO N N82S114 - 2048 Bit Field Programmable Bipolar Prom 256 x 8 G E N E R A L D E S C R IP T IO N T h e 8 2 S 1 14 is field program m able and include on-chip decoding and 2 ch ip enable inputs far ease o f m em ory


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    PDF N82S114 82S114 N82S114N fet ifr 540 82S214 82S215 N82S114F S82S114F signetics 82S 56306E

    82S112

    Abstract: 82S12 N82S112
    Text: S ig n e tic s Memories - Bipolar SAM N82S12, N82S112 - 32 Bit Bipolar Multi- port Memory 8 x 4 G E N E R A L D E S C R IP TIO N Data is stored in a single storage m a trix w hich is add­ ressed via 2 independent sets o f address in puts, designated respectively as P ort A and P o rt B.


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    PDF N82S12, N82S112 82S112 82S12

    S8251

    Abstract: 82S11 56267R signetics 82S1 82S10 82S111 N82S10 A4T10 N82S11F
    Text: Signetics Memories - Bipolar Ram N82S10, N82S110, 82S11, 82S111 — 1024 Bit Bipolar Ram C O N N E C TIO N D IA G R A M G E N E R A L D E SC R IPTIO N The 8 2 S 1 0 /1 1, w ith a typ ic a l access tim e o f 30ns, is ideal fo r cache b u ffe r app lica tions and fo r systems requiring very


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    PDF N82S10, N82S110, 82S11, 82S111 82S10/11, 82S10/11 N82S10/110/11/111. 82S10 82S11 S8251 56267R signetics 82S1 N82S10 A4T10 N82S11F

    Untitled

    Abstract: No abstract text available
    Text: 82S114-F.N • 82S115-F.N • Address access time: N82S114/115: 60ns max S82S114/115: 90ns max • Power dissipation: 165/^W/bit typ • Input loading: N82S114/115: -100^A max S82S114/115: -1 5 0 /jA max • On-chip storage latches • Schottky clamped • Fully T T L compatible


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    PDF 82S114-F 82S115-F 82S114 82S115

    N82S115N

    Abstract: N82S115F 82S11 82S115 82S215 N82S115 S82S115
    Text: Signetics Memories - Bipolar Proms N82S115 -4 0 9 6 Bit Field Programmable Bipolar From C O N N E C T IO N D IA G R A M 8 2 S 1 15 devices are available in the com m ercial and m ilitary temperature ranges. F o r the com m ercial temperature range 0°C to + 7 5 ° C specify N 8 2 S 1 15, F or N , and for the


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    PDF N82S115 82S115 N82S115N N82S115F 82S11 82S215 S82S115

    82S16

    Abstract: N82S16N N82S116N 82S17 "pin compatible" N82S16 82S17 N82S17 82S116 S82S16 N82S117F
    Text: Signetics Memories - Bipolar Ram N82S16, N82S116, N82S17, N82S117 - 2 5 6 Bit Ram 256 x 1 C O N N E C T IO N D IA G R A M G E N E R A L D E S C R IP T IO N T he 8 2 S 1 6 / 1 16 and 8 2 S 1 7 / 1 17 are read/write m e m ory arrays w hich feature either open collector or -tri-state o utput optio ns


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    PDF N82S16, N82S116, N82S17, N82S117 82S16/116 82S17/117 25jiA 100juA 82S16 N82S16N N82S116N 82S17 "pin compatible" N82S16 82S17 N82S17 82S116 S82S16 N82S117F

    82S112

    Abstract: 82S12 N82S112 signetics memories bipolar
    Text: S ig n e tic s Memories - Bipolar S A M N82S12, N82S112 - 32 Bit Bipolar Multi- port Memory 8 x 4 G E N E R A L D E S C R IP TIO N Data is stored in a single storage m a trix w hich is add­ ressed via 2 independent sets o f address in puts, designated respectively as P ort A and P o rt B.


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    PDF N82S12, N82S112 82S112 82S12 signetics memories bipolar

    74s188 programming

    Abstract: 74S471 N82S06 74S470 dip18 package str 52100 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 74S472 PROM PROGRAMMING 8080a 74S287 programming instructions
    Text: The E ngineering Staff of TEXAS INSTRUMENTS INCORPORATED Semiconductor Memory Data Book y for \ T exas In Design Engineers s t r u m e n t s >le of Contents • Alphanumeric Index • GENERAL INFORMATION Selection Guides • Glossary INTERCHANGEABILITY GUIDE


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    PDF 38510/MACH MIL-M-38510 74s188 programming 74S471 N82S06 74S470 dip18 package str 52100 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 74S472 PROM PROGRAMMING 8080a 74S287 programming instructions

    N82S115N

    Abstract: T750C
    Text: Philips Componenls-Signetics Document No. 853-0106 ECN No. 86487 Date of Issue November 11, 1986 Status Product Specification 82S115 4K-bit TTL bipolar PROM Memory Products DESCRIPTION FEATURES The 82S115 is field programmable and includes on-chip decoding and 2 chip


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    PDF 82S115 82S115 N82S115N T750C

    6301-1 prom

    Abstract: 3622 prom mmi 3601 PROM 3601 intel 3601 PROM PROM intel 3601 9344C N82S141 74S189 N82S137
    Text: BIPOLAR MEMORY DIVISION MAY 1982 8192-BIT BIPOLAR PROM 1024 x 8 82HS181 /82HS181A (T.S.) DESCRIPTION FEATURES The 82HS181 is fie ld p rog ra m m a b le , w h ich m eans th a t cu s to m p a tte rn s are im ­ m e d ia te ly a va ila b le by fo llo w in g th e fu s in g


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    PDF 8192-BIT 1024x8) 82HS181/82HS181A 82HS181 N82HS185 N82S25 N82S16 TBP18SA030J, 6301-1 prom 3622 prom mmi 3601 PROM 3601 intel 3601 PROM PROM intel 3601 9344C N82S141 74S189 N82S137

    N82S191

    Abstract: 6301-1 prom 82S191 SIGNETICS prom 6331-1 PROM intel 3601 SIGNETICS prom n82s141 74S200 HM76161-5 93427C
    Text: MAY 1982 BIPOLAR MEMORY DIVISION 16,384-BIT BIPOLAR PROM 2048 X 8 DESCRIPTION The 82S191 Is field programmable, which means that custom patterns are Immediate­ ly available by following the fusing proce­ dure given in this data manual. The 82S191 is supplied with all outputs at a logical low.


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    PDF 384-BIT 2048x8) 82S191 82S191 N82S191 N82HS185 N82S25 N82S16 6301-1 prom SIGNETICS prom 6331-1 PROM intel 3601 SIGNETICS prom n82s141 74S200 HM76161-5 93427C

    825115

    Abstract: 82S115 N82S115 S82S115
    Text: BIPOLAR MEMORY DIVISION MAY 1982 4096-BIT BIPOLAR PROM 5 1 2 x 8 DESCRIPTION The 82S 115 is field prog ra m m a ble and in­ cludes o n -ch ip d eco d in g and 2 ch ip enable inputs fo r ease o f m e m ory expansion. It features tri-sta te o utp u ts fo r o p tim iza tio n of


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    PDF 4096-BIT 512x8) 82S115 825115 N82S115 S82S115

    82S114

    Abstract: 82S115
    Text: 82S114-F.N • 82S115-F.N DESCRIPTION The 82S114 and 82S115 are fie ld p ro g ra m ­ m able and in clu d e o n -c h ip d e c o d in g and 2 c h ip enable inpu ts fo r ease of m e m ory ex­ pansion. They feature tri-s ta te o u tp u ts fo r o p tim iza tio n of w ord exp ansion in bused


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    PDF 82S114-F 82S115-F 82S114 82S115

    N82S185

    Abstract: N82S141 93427c 74S200 N82S147 6331-1 6301-1 prom 74S301 DM74S287 PROM intel 3601
    Text: BIPOLAR M E M O R Y M AY 1962 8192-BIT BIPOLAR PROM 2 0 4 8 x 4 82S185(T.S.) DESCRIPTIO N FEATURES T h e 82S 185 is fie ld p ro g ra m m a b le , w h ic h


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    PDF 8192-BIT 2048x4) 82S185 82S185 N82S185, N82HS185 N82S25 N82S16 N82S185 N82S141 93427c 74S200 N82S147 6331-1 6301-1 prom 74S301 DM74S287 PROM intel 3601

    N82S141

    Abstract: 93427c 6331-1 N82S137 mmi 6301-1 74S200 N82S129 74S206 MMI 6341-1 AM27S29C
    Text: MAY 1982 BIPOLAR MEMORY DIVISION 8 1 92-BIT BIPOLAR PROM 2 0 4 8 x 4 _ 82HS485/82HS185A (T.S.) DESCRIPTION FEATURES The 82HS185 is fie ld program m able, vihich means th a t cu sto m patte rn s are im m ed iate ­ ly available by fo llo w in g th e fu sin g p roce ­


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    PDF 8192-BIT 2048x4) 82HS185/82HS185A 82HS185 N82HS185 N82S25 N82S16 TBP18SA030J, N82S141 93427c 6331-1 N82S137 mmi 6301-1 74S200 N82S129 74S206 MMI 6341-1 AM27S29C

    82S11

    Abstract: N82S10 n82510 82S10
    Text: 82S10/110-F.N • 82S11/111-F.N DESCRIPTION APPLICATIONS The 82S10/11, w ith a typ ica l access tim e of 30ns, is ideal fo r cache b u ffe r ap p lic a tio n s and fo r system s re q u irin g very high speed m ain m em ory. • • • • PIN CONFIGURATION


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    PDF 82S10/110-F 82S11/111-F 82S10/11, 82S10/11 N82S10/110/11 82S10 82S11 S82S10/11. N82S10 n82510

    2650B

    Abstract: wf vqc 10d alu 9308 d Signetics 2650 SN52723 2650 cpu 82S103 pipbug Signetics NE561 cd 75232
    Text: flcnCTICf ßii>ouiR/mos fflICROPROCEÍSOR DATfl mnnuni SIGNETICS reserves the right to make changes in the products contained in this book in order to improve design or performance and to supply the best possible products. Signetics also assumes no responsibility for the


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    THERMISTORS nsp 037

    Abstract: Thyristor TAG 9118 ICA 0726 0148 Transformer a1273 y k transistor AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032
    Text: INDEX OF COMPONENTS A Section/Page No. A.C. Adaptor. Adaptor Kits BNC e tc . Adhesive Tapes. Adhesives, Various. Aerosols.


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    PDF 200X300X360m THERMISTORS nsp 037 Thyristor TAG 9118 ICA 0726 0148 Transformer a1273 y k transistor AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032

    triac tag 8518

    Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
    Text: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference


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    TCA965 equivalent

    Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
    Text: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated


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    PDF DG211. DG300 DG308 DG211 TCA965 equivalent ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401

    N82S181

    Abstract: 82S181 N82S141 74S200 mmi 3601 6331-1 prom tbp24sa10 93427C n82s147 MMI 6330
    Text: MAY 1982 BIPOLAR MEMORY DIVISION 8192-BIT BIPOLAR PROM 1024 x 8 DESCRIPTION FEATURES The 82S180 and 82S181 are field program­ mable, which means that custom patterns are immediately available by follow ing the fusing procedure given in this data manual.


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    PDF 8192-BIT 1024x8) 82S180 /82S181 82S180 82S181 N82S181 N82S141 74S200 mmi 3601 6331-1 prom tbp24sa10 93427C n82s147 MMI 6330

    SIGNETICS* fusing procedure

    Abstract: 82S115 825115 N82S115 S82S115 SIGNETICS prom Bipolar PROM programming signetics generic procedure
    Text: BIPOLAR MEMORY DIVISION MAY 1982 82S115 PROGRAMMING PROCEDURE PRO G RAM M ING SYSTEM SP E C IF IC A T IO N S Testing o f these lim its m ay cause p rog ra m m in g o f device. T a = +25°C LIM ITS TE S T C O N D IT IO N S PARAMETER UN IT Min Max V Power su p p ly voltage


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