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    N6056 Price and Stock

    Microchip Technology Inc 1N6056

    TVS DIODE 41VWM 73.5VC DO13
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    DigiKey 1N6056 Bulk 100
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    Avnet Americas 1N6056 Reel 21 Weeks 100
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    1N6056 Bulk 21 Weeks 100
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    Microchip Technology Inc 1N6056 1
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    NAC 1N6056 15
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    Microchip Technology Inc 1N6056A

    TVS DIODE 43VWM 70.1VC DO13
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    1N6056A Reel 21 Weeks 100
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    Newark 1N6056A Bulk 32
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    Microchip Technology Inc 1N6056A 24 1
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    Master Electronics 1N6056A
    • 1 $45.188
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    Microchip Technology Inc 1N6056-TR

    TVS DIODE 41VWM 73.5VC DO13
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    Microchip Technology Inc 1N6056A-TR

    TVS DIODE 43VWM 70.1VC DO13
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    Microchip Technology Inc JAN1N6056A

    TVS DIODE 43VWM 70.1VC DO13
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    Avnet Americas JAN1N6056A Bulk 21 Weeks 100
    • 1 $58
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    Microchip Technology Inc JAN1N6056A
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    NAC JAN1N6056A 6
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    Master Electronics JAN1N6056A
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    N6056 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6055 MOTOROLA

    Abstract: 2N6055 2N6055 transistor 2N6056
    Text: MOTOROLA Order this document by 2N6055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N 60 55 2 N6056* D arlington C om plem entary Silicon Pow er Transistors ‘ Motorola Preferred Device . . . designed for general-purpose amplifier and low frequency switching applications.


    OCR Scan     		PDF 2N6055/D 2N6055 2N6056 N6056* O-204AA 2N6055 MOTOROLA 2N6055 2N6055 transistor

    2N6096

    Abstract: 2N6055 2N6055 MOTOROLA N6056 2N6056
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N 6055 2 N6056* Darlington Com plem entary Silicon Power Transistors "Motorola Preferred Device . . . designed for general-purpose amplifier and low frequency switching applications. • • • • DARLINGTON 8 AMPERE


    OCR Scan     		PDF 2N6055 2N6056 N6056* 2N6055 2N6056 2N6096 2N6055 MOTOROLA N6056

    TYPE TO 092 Package pic

    Abstract: MN6062
    Text: Microísemi Corp. 1N 6036 thru 1 N 6 07 2A V T he <}<ode experts SANTA ANA, CA SCOTTSDALE, AZ F or m o r e in fo r m a tio n call: 6 0 2 941-6300 FEA TU RES • 1500 WATTS PEAK POWER DISSIPATION • AVAILABLE IN STANDOFF VOLTAGES FROM 5.5V TO 185V • 00-13 HERMETICALLY SEALED PACKAGE


    OCR Scan     		PDF 1NB070A) MIL-S-19500/507 TYPE TO 092 Package pic MN6062

    n6055

    Abstract: 1N60 LL 34 N6045A N6037
    Text: N 6 0 3 6 - 1 N 6 0 7 2 A s e r i e s IN60 SERIES 1500 WATT METAL AXIAL TRANSIENT VOLTAGE SUPPRESSORS (hermetically sealed package for harsh industrial environments) FEATURES •* Stand-off voltage range 6.8 - 200 Volts * Glass Passivated Junction - Excellent clamping capability


    OCR Scan     		PDF -65tC 175tC 1000ns) DO-13 MIL-STD-202 n6055 1N60 LL 34 N6045A N6037

    wiring diagram audio amplifier ic 6283

    Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838
    Text: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor


    OCR Scan     		PDF 4L3052 4L3056 wiring diagram audio amplifier ic 6283 germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838

    194304MHZ

    Abstract: MN6054 194304-MHz mn6056 N6054
    Text: DIGITAL MONOLITHIC INTEGRATED CIRCUITS MOS MOS 1C, LSI Electrical Characteristics (Ta=25°C) Type No. Function Maximum Ratings (Ta=25°C) Symbol Item min. Condition J typ. | max. Unit CMOS Clock V do= —0.3—+4V Su p p ly Voltage V un Vss= 0V Topr= -3 0 ~+ 70 t


    OCR Scan     		PDF 1801J 024Hz 12-Stage 194304MHz N6057 N6057 194304MHZ MN6054 194304-MHz mn6056 N6054

    1N5160

    Abstract: MAX 6438 GEO SEMICONDUCTORS 2N6058 transistor bf 175 2N3902 2N5696 1N5788 Germanium itt
    Text: DEVICE INDEX Devices characterized in Volume II show the page reference only. Devices characterized in Volume I are referenced by volume and page number. DEVICE 1N5000 1N5001 1N5002 1N5003 1 N 5 1 3 9 .A 1 N 5 1 4 0 .A 1 N 5 1 4 1 .A 1 N 5 1 4 2 .A 1 N 5 1 4 3 .A


    OCR Scan     		PDF 1N5000 1N5001 1N5002 1N5003 1N5149 1N5150 1N5153 1N5155 1N5158 1N5159 1N5160 MAX 6438 GEO SEMICONDUCTORS 2N6058 transistor bf 175 2N3902 2N5696 1N5788 Germanium itt