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    N3 MARKING TRANSISTOR Search Results

    N3 MARKING TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54F139/BEA Rochester Electronics LLC 54F139 - Decoder/Driver, F/FAST Series, Inverted Output, TTL, CDIP16 - Dual marked (M38510/33702BEA) Visit Rochester Electronics LLC Buy
    54F151/BEA Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) Visit Rochester Electronics LLC Buy
    54F151/BFA Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDFP16 - Dual marked (M38510/33901BFA) Visit Rochester Electronics LLC Buy
    54F157/BEA Rochester Electronics LLC Multiplexer, 2-Func, 4 Line Input, TTL, CDIP16 - Dual marked (M38510/33903BEA) Visit Rochester Electronics LLC Buy
    54F153/BEA Rochester Electronics LLC 54F153 - Multiplexer, 2-Func, 4 Line Input, TTL, CDIP16 - Dual marked (M38510/33902BEA) Visit Rochester Electronics LLC Buy

    N3 MARKING TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SOT23 W1P

    Abstract: MARKING W1P transistor w1P MARKING W2 SOT23 marking code R2 sot23 marking code w2 sot23 marking code W1p marking code P2p SOT23 marking W1 sot23 marking code w2 sot323
    Text: DISCRETE SEMICONDUCTORS Marking codes RF Wideband Transistors Supersedes data of 1997 Nov 21 1999 Jul 21 Philips Semiconductors RF Wideband Transistors Marking codes TYPE NUMBER TO PACKAGE AND MARKING CODE TYPE NUMBER PACKAGE BF547 BF547W BF747 BFC505 SOT23


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    PDF BF547 BF547W BF747 BFC505 OT323 OT353 OT143 SOT23 W1P MARKING W1P transistor w1P MARKING W2 SOT23 marking code R2 sot23 marking code w2 sot23 marking code W1p marking code P2p SOT23 marking W1 sot23 marking code w2 sot323

    BFG540 N43

    Abstract: w1p 22 SOT23 W1P sot143 Marking code V12 "W1P" f763 SOT89 MARKING CODE marking code V3 SOT89 N5 MARKING CODE V3 marking code
    Text: DISCRETE SEMICONDUCTORS DATA SHEET Marking codes RF Wideband Transistors 1997 Nov 22 File under Discrete Semiconductors, SC14 Philips Semiconductors RF Wideband Transistors Marking codes TYPE NUMBER TO PACKAGE AND MARKING CODE TYPE NUMBER PACKAGE MARKING CODE


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    PDF BF547 BF547W BF689K BF747 OT323 OT353 OT143 BFG540 N43 w1p 22 SOT23 W1P sot143 Marking code V12 "W1P" f763 SOT89 MARKING CODE marking code V3 SOT89 N5 MARKING CODE V3 marking code

    marking n3

    Abstract: TN0604N3 75E1 MS-013 TN0604 TN0604N3-G TN0604WG-G n-channel fet to-92
    Text: TN0604 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


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    PDF TN0604 140pF MS-013, DSFP-TN0604 A102507 marking n3 TN0604N3 75E1 MS-013 TN0604 TN0604N3-G TN0604WG-G n-channel fet to-92

    tp0604

    Abstract: No abstract text available
    Text: TP0604 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


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    PDF TP0604 MS-013, DSFP-TP0604 A112107

    N3 marking sot-323

    Abstract: transistor marking code N3 sot-323 LDTC114EWT1G transistor N3 SOT ua 323
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTC114EWT1G Applications Inverter, Interface, Driver 3 • Features 1 Built-in bias resistors enable the configuration of an


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    PDF LDTC114EWT1G N3 marking sot-323 transistor marking code N3 sot-323 LDTC114EWT1G transistor N3 SOT ua 323

    sivn

    Abstract: vn2lw VN3205N8-G seimens vn3205 125OC VN3205N3-G VN3205ND DMOS B0521
    Text: VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with


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    PDF VN3205 DSFP-VN3205 B052109 sivn vn2lw VN3205N8-G seimens vn3205 125OC VN3205N3-G VN3205ND DMOS B0521

    TO-243AA

    Abstract: diode marking CODE VN G1 s4 marking code siemens VN3205N8-G
    Text: VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with


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    PDF VN3205 MS-001, DSFP-VN3205 B020608 TO-243AA diode marking CODE VN G1 s4 marking code siemens VN3205N8-G

    sitn

    Abstract: marking n3 TN0604N3-G 125OC TN0604 TN0604WG-G 3V02 D0804 SiTN 06
    Text: Supertex inc. TN0604 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


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    PDF TN0604 140pF DSFP-TN0604 A022309 sitn marking n3 TN0604N3-G 125OC TN0604 TN0604WG-G 3V02 D0804 SiTN 06

    TN0604WG-G

    Abstract: 75E1 TN0604 TN0604N3-G
    Text: TN0604 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


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    PDF TN0604 140pF DSFP-TN0604 A022309 TN0604WG-G 75E1 TN0604 TN0604N3-G

    DIODE S4 08

    Abstract: vn3205p-g VN3205N8-G diode sot-89 marking code S1
    Text: VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► These enhancement-mode normally-off transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with


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    PDF VN3205 MS-001, DSFP-VN3205 A101507 DIODE S4 08 vn3205p-g VN3205N8-G diode sot-89 marking code S1

    DSFP-VN0104

    Abstract: No abstract text available
    Text: VN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination


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    PDF VN0104 VN0104 DSFP-VN0104 A102907

    Untitled

    Abstract: No abstract text available
    Text: TN0604 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


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    PDF TN0604 140pF DSFP-TN0604 A111808

    marking 3A sot-89

    Abstract: 3V02 SIVN3205 VN3205
    Text: VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with


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    PDF VN3205 DSFP-VN3205 B022109 marking 3A sot-89 3V02 SIVN3205

    TRANSISTOR LIZ

    Abstract: No abstract text available
    Text: TN0604 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


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    PDF TN0604 140pF DSFP-TN0604 A091608 TRANSISTOR LIZ

    TRANSISTOR N3

    Abstract: vp0104
    Text: VP0104 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► ► The Supertex VP0104 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


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    PDF VP0104 VP0104 DSFP-VP0104 A020408 TRANSISTOR N3

    b0915

    Abstract: VN3205
    Text: VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with


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    PDF VN3205 DSFP-VN3205 B091508 b0915

    VN0104

    Abstract: No abstract text available
    Text: VN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination


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    PDF VN0104 DSFP-VN0104 A091508

    Untitled

    Abstract: No abstract text available
    Text: VP0109 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► ► The Supertex VP0109 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


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    PDF VP0109 VP0109 DSFP-VP0109 A020408

    transistor marking wr1 sot-23

    Abstract: WR1 SOT23 WR1 marking code marking 6k sot-23 package DTA143ZN3 DTC143ZN3 transistor digital 47k 22k PNP NPN 6K SOT23 6K MARKING CODE DTC143ZN
    Text: Spec. No. : C271N3 Issued Date : 2005.07.29 Revised Date : Page No. : 1/6 CYStech Electronics Corp. PNP Digital Transistors Built-in Resistors DTA143ZN3 Features • Built-in bias resistors enable the configuration of an inverter circuit without connecting external


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    PDF C271N3 DTA143ZN3 DTC143ZN3 OT-23 UL94V-0 transistor marking wr1 sot-23 WR1 SOT23 WR1 marking code marking 6k sot-23 package DTA143ZN3 DTC143ZN3 transistor digital 47k 22k PNP NPN 6K SOT23 6K MARKING CODE DTC143ZN

    sivp

    Abstract: SIVP01 vp0106
    Text: VP0106 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► The Supertex VP0106 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


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    PDF VP0106 DSFP-VP0106 A012409 sivp SIVP01

    TP2535N3-G

    Abstract: No abstract text available
    Text: TP2535 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


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    PDF TP2535 125pF TP2535 DSFP-TP2535 A112807 TP2535N3-G

    transistor marking wr1 sot-23

    Abstract: CYStech Electronics marking n3 marking r25 sot23 DTB143TN3 DTD143TN3 marking code WR1
    Text: CYStech Electronics Corp. Spec. No. : C380N3 Issued Date : 2005.04.15 Revised Date :2005.06.24 Page No. : 1/6 NPN Digital Transistors Built-in Resistors DTD143TN3 Features • Built-in bias resistors enable the configuration of an inverter circuit without connecting external input


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    PDF C380N3 DTD143TN3 DTB143TN3 OT-23 UL94V-0 transistor marking wr1 sot-23 CYStech Electronics marking n3 marking r25 sot23 DTB143TN3 DTD143TN3 marking code WR1

    V 904 RL 805

    Abstract: BFG520W N4 TAM transistor fp 1016 DIN45004B
    Text: Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFG520W BFG520W/X; BFG520W/XR MARKING • High power gain TYPE NUMBER • Low noise figure BFG520W N3 • High transition frequency BFG520W/X N4 • Gold metallization ensures


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    PDF BFG520W BFG520W/X; BFG520W/XR OT343 OT343R BFG520W/X BFG520W/XR 7110fli V 904 RL 805 N4 TAM transistor fp 1016 DIN45004B

    SOT23 W1P

    Abstract: BFG540 N43 SOT89 MARKING CODE "W1P" MARKING W1P sot143 Marking code p1 PSH10 sot143 sot343 marking code V3 w1p code
    Text: Philips Semiconductors RF Wideband Transistors Marking codes TYPE NUMBER TO PACKAGE AND MARKING CODE TYPE NUMBER PACKAGE BF547 SOT23 BF547W BF689K SOT323 SOT54 BF747 SOT23 SOT54 BF763 BFC505 BFC520 BFE505 BFE520 BFG10 BFG10/X BFG10W/X BFG11 BFG11/X BFG11W/X


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    PDF BF547 BF547W BF689K BF747 BF763 BFC505 BFC520 BFE505 BFE520 BFG10 SOT23 W1P BFG540 N43 SOT89 MARKING CODE "W1P" MARKING W1P sot143 Marking code p1 PSH10 sot143 sot343 marking code V3 w1p code