VN3205N6
Abstract: diode marking CODE VN G1 vn2lw VN3205 SOT89 MARKING CODE 43 diode marking CODE VN S2
Text: VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► These enhancement-mode normally-off transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination
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PDF
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VN3205
MS-001,
DSFP-VN3205
A071607
VN3205N6
diode marking CODE VN G1
vn2lw
SOT89 MARKING CODE 43
diode marking CODE VN S2
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DIODE S4 08
Abstract: vn3205p-g VN3205N8-G diode sot-89 marking code S1
Text: VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► These enhancement-mode normally-off transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with
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Original
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PDF
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VN3205
MS-001,
DSFP-VN3205
A101507
DIODE S4 08
vn3205p-g
VN3205N8-G
diode sot-89 marking code S1
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marking 3A sot-89
Abstract: 3V02 SIVN3205 VN3205
Text: VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with
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Original
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PDF
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VN3205
DSFP-VN3205
B022109
marking 3A sot-89
3V02
SIVN3205
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TO-243AA
Abstract: diode marking CODE VN G1 s4 marking code siemens VN3205N8-G
Text: VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with
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Original
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PDF
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VN3205
MS-001,
DSFP-VN3205
B020608
TO-243AA
diode marking CODE VN G1
s4 marking code siemens
VN3205N8-G
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P014 DIODE marking
Abstract: VN3205N3-GP013 TO-92 Package Dimensions diode inc
Text: Supertex inc. VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ►► Free from secondary breakdown ►► Low power drive requirement ►► Ease of paralleling ►► Low CISS and fast switching speeds ►► Excellent thermal stability
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Original
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PDF
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VN3205
DSFP-VN3205
C092712
P014 DIODE marking
VN3205N3-GP013
TO-92 Package Dimensions diode inc
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43 sot-89 marking code
Abstract: VN3205
Text: Supertex inc. VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ►► Free from secondary breakdown ►► Low power drive requirement ►► Ease of paralleling ►► Low CISS and fast switching speeds ►► Excellent thermal stability
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Original
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PDF
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VN3205
DSFP-VN3205
C101612
43 sot-89 marking code
VN3205
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b0915
Abstract: VN3205
Text: VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with
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Original
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PDF
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VN3205
DSFP-VN3205
B091508
b0915
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VN3205
Abstract: No abstract text available
Text: Supertex inc. VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode
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Original
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PDF
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VN3205
DSFP-VN3205
C101612
VN3205
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sivn
Abstract: vn2lw VN3205N8-G seimens vn3205 125OC VN3205N3-G VN3205ND DMOS B0521
Text: VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with
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Original
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PDF
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VN3205
DSFP-VN3205
B052109
sivn
vn2lw
VN3205N8-G
seimens
vn3205
125OC
VN3205N3-G
VN3205ND
DMOS
B0521
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VN3205
Abstract: No abstract text available
Text: VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► These enhancement-mode normally-off transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices
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Original
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PDF
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VN3205
MS-001,
DSFP-VN3205
A072507
VN3205
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