Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    N-CHANNEL 100V 100A Search Results

    N-CHANNEL 100V 100A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    N-CHANNEL 100V 100A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    JESD97

    Abstract: STS3C2F100
    Text: STS3C2F100 N-channel 100V - 0.110 Ω - 3A SO-8 Complementary pair STripFET Power MOSFET General features Type VDSS RDS on ID STS3C2F100(N-channel) 100V <0.145 3.0A STS3C2F100(P-channel) 100V <0.380 1.5A • Standard outline for easy automated surface


    Original     		PDF STS3C2F100 STS3C2F100 JESD97

    JESD97

    Abstract: STS3C2F100
    Text: STS3C2F100 N-channel 100V - 0.110 Ω - 3A SO-8 Complementary pair STripFET Power MOSFET General features Type VDSS RDS on ID STS3C2F100(N-channel) 100V <0.145 3.0A STS3C2F100(P-channel) 100V <0.380 1.5A • Standard outline for easy automated surface


    Original     		PDF STS3C2F100 STS3C2F100 JESD97

    75639P

    Abstract: HUF75639P3 75639G 75639S HUF75639G3 HUF75639S3S HUF75639S3ST TB334
    Text: HUF75639G3, HUF75639P3, HUF75639S3S Semiconductor Data Sheet April 1999 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs File Number 4477.5 Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process.


    Original     		PDF HUF75639G3, HUF75639P3, HUF75639S3S O-263AB 330mm 100mm EIA-481 75639P HUF75639P3 75639G 75639S HUF75639G3 HUF75639S3S HUF75639S3ST TB334

    75639p

    Abstract: 75639s 75639G 75639 HUFA75639G3 HUFA75639P3 HUFA75639S3S HUFA75639S3ST TB334
    Text: HUFA75639G3, HUFA75639P3, HUFA75639S3S Data Sheet December 2001 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology


    Original     		PDF HUFA75639G3, HUFA75639P3, HUFA75639S3S 75639p 75639s 75639G 75639 HUFA75639G3 HUFA75639P3 HUFA75639S3S HUFA75639S3ST TB334

    40n10le

    Abstract: F40N10LE 40A100V RF1S40N10LESM RF1S40N10LESM9A RFG40N10LE RFP40N10LE TB334 F40N10
    Text: RFG40N10LE, RFP40N10LE, RF1S40N10LESM Data Sheet October 1999 40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs File Number 4061.5 Features • 40A, 100V These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process


    Original     		PDF RFG40N10LE, RFP40N10LE, RF1S40N10LESM 40n10le F40N10LE 40A100V RF1S40N10LESM RF1S40N10LESM9A RFG40N10LE RFP40N10LE TB334 F40N10

    2E12

    Abstract: FRX130D FRX130H FRX130R
    Text: FRX130D, FRX130R, FRX130H Radiation Hardened N-Channel Power MOSFETs April 1998 Features Description • 6A, 100V, rDS ON = 0.180Ω The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from 100V to


    Original     		PDF FRX130D, FRX130R, FRX130H 1000K 1E13n/cm2 1E14n/cm2 10lopment. 2E12 FRX130D FRX130H FRX130R

    STS3C2F100

    Abstract: No abstract text available
    Text: STS3C2F100 N-CHANNEL 100V - 0.110 Ω - 3A SO-8 P-CHANNEL 100V - 0.320 Ω - 1.5A SO-8 COMPLEMENTARY PAIR STripFET POWER MOSFET TYPE VDSS RDS on ID STS3C2F100(N-Channel) STS3C2F100(P-Channel) 100 V 100 V < 0.145Ω < 0.380Ω 3.0 A 1.5 A • ■ ■ ■


    Original     		PDF STS3C2F100 STS3C2F100

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 19N10V Power MOSFET 100V N-Channel MOSFET „ DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors MOSFET are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the


    Original     		PDF 19N10V QW-R502-914,

    75639p

    Abstract: 75639g
    Text: HUFA75639G3, HUFA75639P3, HUFA75639S3S TM Data Sheet November 2000 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs File Number 4961 Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology


    Original     		PDF HUFA75639G3, HUFA75639P3, HUFA75639S3S 75639p 75639g

    ZXMHC10A07T8

    Abstract: ZXMHC10A07T8TC ZXMHC10A07T8TA
    Text: ZXMHC10A07T8 COMPLEMENTARY 100V ENHANCEMENT MODE MOSFET H-BRIDGE SUMMARY N-Channel = V BR DSS = 100V : RDS(on) = 0.7 ; ID = 1.4A P-Channel = V(BR)DSS = -100V : RDS(on) = 1.0 ; ID = -1.3A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that


    Original     		PDF ZXMHC10A07T8 -100V ZXMHC10A07T8 ZXMHC10A07T8TC ZXMHC10A07T8TA

    2N6796

    Abstract: TB334
    Text: 2N6796 Data Sheet December 2001 8A, 100V, 0.180 Ohm, N-Channel Power MOSFET Features • 8A, 100V The 2N6796 is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor


    Original     		PDF 2N6796 2N6796 O-205AF TB334

    BUZ72A

    Abstract: TA17401 TB334
    Text: BUZ72A Data Sheet December 2001 9A, 100V, 0.250 Ohm, N-Channel Power MOSFET Features • 9A, 100V This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,


    Original     		PDF BUZ72A TA17401. O-220Aopment. BUZ72A TA17401 TB334

    2E12

    Abstract: FRX130D FRX130H FRX130R
    Text: FRX130D, FRX130R, FRX130H Radiation Hardened N-Channel Power MOSFETs April 1998 Features Description • 6A, 100V, rDS ON = 0.180Ω The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from 100V to


    Original     		PDF FRX130D, FRX130R, FRX130H 1000K 1E13n/cm2 1E14n/cm2 10oducts 2E12 FRX130D FRX130H FRX130R

    Mosfet N-Channel 19N10, TO-251

    Abstract: 19n10 19N10L-TM3-T 19n10l 19N10G-TN3-R IS156 100V n-channel MOSFET
    Text: UNISONIC TECHNOLOGIES CO., LTD 19N10 Power MOSFET 100V N-Channel MOSFET „ DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors MOSFET are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the


    Original     		PDF 19N10 QW-R502-261 Mosfet N-Channel 19N10, TO-251 19n10 19N10L-TM3-T 19n10l 19N10G-TN3-R IS156 100V n-channel MOSFET

    19n10

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 19N10 Power MOSFET 100V N-Channel MOSFET „ DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors MOSFET are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the


    Original     		PDF 19N10 QW-R502-261 19n10

    75639p

    Abstract: 75639 75639g 75639S 504E3 TB334 HUF75639G3 HUF75639P3 HUF75639S3S HUF75639S3ST
    Text: HUF75639G3, HUF75639P3, HUF75639S3S Data Sheet October 1999 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs File Number 4477.7 Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology


    Original     		PDF HUF75639G3, HUF75639P3, HUF75639S3S 75639p 75639 75639g 75639S 504E3 TB334 HUF75639G3 HUF75639P3 HUF75639S3S HUF75639S3ST

    75639G

    Abstract: 75639P 75639S HUF75639G3 HUF75639P3 HUF75639S3S HUF75639S3ST TB334
    Text: HUF75639G3, HUF75639P3, HUF75639S3S TM Data Sheet August 2000 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs File Number 4477.8 Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology


    Original     		PDF HUF75639G3, HUF75639P3, HUF75639S3S 75639G 75639P 75639S HUF75639G3 HUF75639P3 HUF75639S3S HUF75639S3ST TB334

    1E14

    Abstract: 2E12 FRL130R4 JANSR2N7272
    Text: JANSR2N7272 Formerly FRL130R4 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 8A, 100V, rDS ON = 0.180Ω The Intersil Corporation,has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from


    Original     		PDF JANSR2N7272 FRL130R4 1000K 1E14 2E12 FRL130R4 JANSR2N7272

    1E14

    Abstract: 2E12 FRF150R4 JANSR2N7292
    Text: JANSR2N7292 Formerly FRF150R4 25A, 100V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 25A, 100V, rDS ON = 0.070Ω The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from


    Original     		PDF JANSR2N7292 FRF150R4 1000K 1E14 2E12 FRF150R4 JANSR2N7292

    RFP22N10

    Abstract: No abstract text available
    Text: RFP22N10, RF1S22N10, RF1S22N10SM S E M I C O N D U C T O R 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs April 1998 Features Description • 22A, 100V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature


    Original     		PDF RFP22N10, RF1S22N10, RF1S22N10SM TA9845. 1-800-4-HARRIS RFP22N10

    ifr110

    Abstract: TA17441 IFU110 IRFR110 IRFU110 TB334
    Text: IRFR110, IRFU110 Data Sheet 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs January 2002 Features • 4.7A, 100V These are N-Channel enhancement mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the


    Original     		PDF IRFR110, IRFU110 TA17441. TB334 ifr110 TA17441 IFU110 IRFR110 IRFU110 TB334

    IRFF110

    Abstract: TA17441 TB334
    Text: IRFF110 Data Sheet January 2002 3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET Features • 3.5A, 100V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFF110 IRFF110 TA17441 TB334

    IRFD1Z3

    Abstract: IRFD1Z0 TA17451 TB334
    Text: IRFD1Z0, IRFD1Z1, IRFD1Z2, IRFD1Z3 Semiconductor 0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 0.4A and 0.5A, 60V and 100V • Nanosecond Switching Speeds These are N-Channel enhancement mode silicon gate


    Original     		PDF TA17451. Impe13. IRFD1Z3 IRFD1Z0 TA17451 TB334

    Untitled

    Abstract: No abstract text available
    Text: HUF75639G3, HUF75639P3, HUF75639S3S Semiconductor Data Sheet June 1999 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs F ile N u m b er 4477.6 Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process.


    OCR Scan     		PDF HUF75639G3, HUF75639P3, HUF75639S3S 54e-2 98e-1 99e-1 97e-2 HUF75639 95e-3 95e-2