IRFD1Z3
Abstract: IRFD1Z0 TA17451 TB334
Text: IRFD1Z0, IRFD1Z1, IRFD1Z2, IRFD1Z3 Semiconductor 0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 0.4A and 0.5A, 60V and 100V • Nanosecond Switching Speeds These are N-Channel enhancement mode silicon gate
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TA17451.
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IRFD1Z3
IRFD1Z0
TA17451
TB334
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irfd1z3
Abstract: TA17451
Text: tyvvys S IRFD1Z0, IRFD1Z1, IRFD1Z2, IRFD1Z3 Semiconductor y y 0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channei Power MOSFETs July 1998 Features Description • 0.4A and 0.5A, 60V and 100V • Nanosecond Switching Speeds These are N-Channel enhancement mode silicon gate
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TA17451.
irfd1z3
TA17451
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