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    IRFD1Z3

    Abstract: IRFD1Z0 TA17451 TB334
    Text: IRFD1Z0, IRFD1Z1, IRFD1Z2, IRFD1Z3 Semiconductor 0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 0.4A and 0.5A, 60V and 100V • Nanosecond Switching Speeds These are N-Channel enhancement mode silicon gate


    Original     		TA17451. Impe13. IRFD1Z3 IRFD1Z0 TA17451 TB334 PDF

    irfd1z3

    Abstract: TA17451
    Text: tyvvys S IRFD1Z0, IRFD1Z1, IRFD1Z2, IRFD1Z3 Semiconductor y y 0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channei Power MOSFETs July 1998 Features Description • 0.4A and 0.5A, 60V and 100V • Nanosecond Switching Speeds These are N-Channel enhancement mode silicon gate


    OCR Scan     		TA17451. irfd1z3 TA17451 PDF