ifr110
Abstract: TA17441 IFU110 IRFR110 IRFU110 TB334 intersil 4373
Text: IRFR110, IRFU110 Data Sheet 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These advanced
|
Original
|
PDF
|
IRFR110,
IRFU110
ifr110
TA17441
IFU110
IRFR110
IRFU110
TB334
intersil 4373
|
65e9 transistor
Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
|
Original
|
PDF
|
1-888-INTERSIL
MS-012AA
MO-153AA
RF1K49090
RF1K49093
RF1K49092
ITF87056DQT
ITF87072DK8T
ITF87008DQT
RF1K49223
65e9 transistor
transistor 75307D
Transistor 65e8
SD MOSFET DRIVE DATASHEET 4468 8 PIN
G40N60
RHR15120 equivalent
10n120bnd
76107d
transistor 76121D
emerson three phase dc motor driver service note
|
ifr110
Abstract: TA17441 IFU110 IRFR110 IRFU110 TB334
Text: IRFR110, IRFU110 Data Sheet 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs January 2002 Features • 4.7A, 100V These are N-Channel enhancement mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the
|
Original
|
PDF
|
IRFR110,
IRFU110
TA17441.
TB334
ifr110
TA17441
IFU110
IRFR110
IRFU110
TB334
|
IFR110
Abstract: IFU110 irfr110
Text: IRFR110, IRFU110 S E M I C O N D U C T O R 4.7A, 100V, 0.54 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 4.7A, 100V • High Input Impedance These are N-Channel enhancement mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These advanced power
|
Original
|
PDF
|
IRFR110,
IRFU110
TA17441.
IRFU110
IFR110
IFU110
irfr110
|
ifr110
Abstract: No abstract text available
Text: IRFR110, IRFU110 Data Sheet July 1999 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs Features These are N-Channel enhancement mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the
|
Original
|
PDF
|
IRFR110,
IRFU110
TA17441.
ifr110
|