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    N CHANNEL MOSFET 45 W 10 V Search Results

    N CHANNEL MOSFET 45 W 10 V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    N CHANNEL MOSFET 45 W 10 V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CRCW08052201FKEA

    Abstract: CRCW080510R0FKE MRF21010-1 MRF21010
    Text: Freescale Semiconductor Technical Data Document Number: MRF21010-1 Rev. 10, 10/2008 RF Power Field Effect Transistor MRF21010LR1 N-Channel Enhancement-Mode Lateral MOSFET 2110-2170 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET • Typical W-CDMA Performance: -45 dBc ACPR, 2170 MHz, 28 Volts,


    Original     		PDF MRF21010--1 MRF21010LR1 CRCW08052201FKEA CRCW080510R0FKE MRF21010-1 MRF21010

    72632

    Abstract: SUM55N03-16P
    Text: SUM55N03-16P Vishay Siliconix New Product N-Channel 30-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.016 @ VGS = 10 V 55 0.024 @ VGS = 4.5 V 45 D D D D TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized 100% Rg Tested


    Original     		PDF SUM55N03-16P O-263 SUM55N03-16P--E3 08-Apr-05 72632 SUM55N03-16P

    SUM45N25-58-E3

    Abstract: SUM45N25-58 sum45n25
    Text: SUM45N25-58 New Product Vishay Siliconix N-Channel 250-V D-S 175_C MOSFET FEATURES D TrenchFETr Power MOSFETS D 175_C Junction Temperature D New Low Thermal Resistance Package PRODUCT SUMMARY V(BR)DSS (V) 250 rDS(on) (W) ID (A) 0.058 @ VGS = 10 V 45 0.062 @ VGS = 6 V


    Original     		PDF SUM45N25-58 O-263 SUM45N25-58 S-51396--Rev. 25-Jul-05 SUM45N25-58-E3 sum45n25

    Untitled

    Abstract: No abstract text available
    Text: VFT30-28 VHF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The VFT30-28 is Designed for General Purpose Class AB Power Amplifier Applications up to 175 MHz. PACKAGE STYLE .380 4L FLG B FEATURES: .112 x 45° A S • PG = 14 dB Typ. at 30 W /175MHz • 10:1 Load VSWR Capability


    Original     		PDF VFT30-28 VFT30-28 /175MHz

    SUB45N05-20L

    Abstract: SUP45N05-20L
    Text: SUP/SUB45N05-20L New Product Vishay Siliconix N-Channel 50-V D-S , 175_C MOSFET, Logic Level PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.018 @ VGS = 10 V 50 "45 a 0.020 @ VGS = 4.5 V D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S


    Original     		PDF SUP/SUB45N05-20L O-220AB O-263 SUB45N05-20L SUP45N05-20L O-220AB O-263) O-263 S-62982--Rev. 12-Jul-99 SUB45N05-20L SUP45N05-20L

    IAf630

    Abstract: sfn02804 RS630 BUZ73 sfn02204 SFN02814 tx134 sgsp567 SGSP367 2SK400
    Text: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max A) Po Max (W) ros (on) (Ohms) Toper Max Package Style N-Channel Enhancement-Type, (Cont'd) 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 810 600p 60n 60n 2.0 1.3 1.3 1.3 1.3 600p 600p


    Original     		PDF RRF620 2SK755 2SK782 TX124 IRFJ220 SFN02804 SFN02814 SFN204A3 YTF220 YTF620 IAf630 RS630 BUZ73 sfn02204 tx134 sgsp567 SGSP367 2SK400

    SUB45N05-20L

    Abstract: SUP45N05-20L
    Text: SUP/SUB45N05-20L Vishay Siliconix N-Channel 50-V D-S , 175_C MOSFET, Logic Level PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.018 @ VGS = 10 V 50 " a "45 0.020 @ VGS = 4.5 V D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB45N05-20L


    Original     		PDF SUP/SUB45N05-20L O-220AB O-263 SUB45N05-20L SUP45N05-20L S-21855--Rev. 14-Oct-02 SUB45N05-20L SUP45N05-20L

    AGR26045EF

    Abstract: J500 JESD22-C101A
    Text: Preliminary Data Sheet June 2004 AGR26045EF 45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26045EF is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications,


    Original     		PDF AGR26045EF AGR26045EF po8109-9138 DS04-226RFPP DS04-110RFPP) J500 JESD22-C101A

    Untitled

    Abstract: No abstract text available
    Text: FM600TU-2A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com 6-PACK High Power MOSFET Module 300 Amperes/100 Volts A D F G G H K Q L P AB E AE J 7 B N P X (11 PLACES) Z AB AC R AD N L M 1 13 14 T W B A S AF U TC MEASURED


    Original     		PDF FM600TU-2A Amperes/100

    Untitled

    Abstract: No abstract text available
    Text: FM600TU-3A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com 6-PACK High Power MOSFET Module 300 Amperes/150 Volts A D F G G H K Q L P AB E AE J 7 B N P X (11 PLACES) Z AB AC R AD N L M 1 13 14 T W B A S AF U TC MEASURED


    Original     		PDF FM600TU-3A Amperes/150

    J964

    Abstract: No abstract text available
    Text: Data Sheet June 2004 AGR21045EF 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21045EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and


    Original     		PDF AGR21045EF J964

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet June 2004 AGR26045EF 45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26045EF is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications,


    Original     		PDF AGR26045EF

    Untitled

    Abstract: No abstract text available
    Text: FM600TU-2A Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 6-Pack High Power MOSFET Module 300 Amperes/100 Volts A D F G G Q H K P AB E AE J 7 B Z AB N P X (11 PLACES) L AC R AD N M L 1 13 14 T W B A S AF U TC MEASURED


    Original     		PDF FM600TU-2A Amperes/100

    Untitled

    Abstract: No abstract text available
    Text: FM600TU-3A Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 6-Pack High Power MOSFET Module 300 Amperes/150 Volts A D F G G Q H K P AB E AE J 7 B Z AB N P X (11 PLACES) L AC R AD N M L 1 13 14 T W B A S AF U TC MEASURED


    Original     		PDF FM600TU-3A Amperes/150

    Untitled

    Abstract: No abstract text available
    Text: FM600TU-2A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com 6-Pack High Power MOSFET Module 300 Amperes/100 Volts A D F G G Q H K L P AB E N AE J 7 B Z AB AC P X (11 PLACES) L M R AD N 1 13 14 T W B A S AF 6 12 U


    Original     		PDF FM600TU-2A Amperes/100

    Untitled

    Abstract: No abstract text available
    Text: FM600TU-3A Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 6-Pack High Power MOSFET Module 300 Amperes/150 Volts A D F G G Q H K P AB E AE J 7 B Z AB N P X (11 PLACES) L AC R AD N M L 1 13 14 T W B A S AF U TC MEASURED


    Original     		PDF FM600TU-3A Amperes/150 MOS01

    TLE7201

    Abstract: BTS426L2 TLE 6289 xc 7270 TRANSISTOR SMD K27 BTS7960B TLE6289GP BSP 452-T bts5241l ISO11519
    Text: Automotive Power Selection Guide Ultimate POWER – Perfect Control CO M P L E T E A u t o m o t i v e S o l u t i o ns f r o m I n f i n e o n www.infineon.com/power Never stop thinking. Introduction Power and Control – a Successful Combination D O Y O U N E E D to control more power? With increasing accuracy? Do


    Original     		PDF B112-H6731-G12-X-7600 TLE7201 BTS426L2 TLE 6289 xc 7270 TRANSISTOR SMD K27 BTS7960B TLE6289GP BSP 452-T bts5241l ISO11519

    N mosfet 100v 600A

    Abstract: No abstract text available
    Text: FM600TU-2A Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 6-Pack High Power MOSFET Module 300 Amperes/100 Volts A D F G G Q H K P AB E AE J 7 B Z AB N P X (11 PLACES) L AC R AD N M L 1 13 14 T W B A S AF U TC MEASURED


    Original     		PDF FM600TU-2A Amperes/100 N mosfet 100v 600A

    Untitled

    Abstract: No abstract text available
    Text: FM600TU-2A Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 6-Pack High Power MOSFET Module 300 Amperes/100 Volts A D G F G Q N J H M L K X (11 PLACES) L P R 7 B E 1 W T B A S 12 TC MEASURED POINT 6 Y Q K M M X V U C C


    Original     		PDF FM600TU-2A Amperes/100

    Untitled

    Abstract: No abstract text available
    Text: FM600TU-3A Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 6-Pack High Power MOSFET Module 300 Amperes/150 Volts A D G F G Q N J H M L K X (11 PLACES) L P R 7 B E 1 W T B A S 12 TC MEASURED POINT 6 Y Q K M M X V U C C


    Original     		PDF FM600TU-3A Amperes/150

    AGR21045E

    Abstract: AGR21045EF AGR21045EU JESD22-C101A 100B8 Agere Systems
    Text: Preliminary Data Sheet April 2004 AGR21045E 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21045E AGR21045E AGR21045EU AGR21045EF DS04-164RFPP DS04-037RFPP) AGR21045EF AGR21045EU JESD22-C101A 100B8 Agere Systems

    3000 watts ups circuit diagram

    Abstract: No abstract text available
    Text: FM600TU-3A Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 6-Pack High Power MOSFET Module 300 Amperes/150 Volts A D G F G Q N J H M L K X (11 PLACES) L P R 7 B E 1 W T B A S 12 TC MEASURED POINT 6 Y Q K M M X V U C C


    Original     		PDF FM600TU-3A Amperes/150 3000 watts ups circuit diagram

    TN6Q04

    Abstract: 2sk4100 2SJ585 2SK4100ls 2SK4101LS INV250 2SK4096LS 2SJ406 2SK3745LS 2SJ584
    Text: SANYO Power Transistors Bipolar Transistor Series & Schottky Barrier Diode Series CONTENTS 2ĝ5 ŝTO-220MF Package 6 ŝTO-220FI Package ŝLow-saturation Voltage Transistors 7 ŝTO-220FI5H Package 14 ŝHorizontal Deflection Output Use 8 ŝTO-220ML Package 15


    Original     		PDF O-220MF O-220FI O-220FI5H O-220ML O-126 O-126LP O-126ML O-220FI O-220FI5H-HB O-220FI5H-HA TN6Q04 2sk4100 2SJ585 2SK4100ls 2SK4101LS INV250 2SK4096LS 2SJ406 2SK3745LS 2SJ584

    S1095

    Abstract: NTP13N10
    Text: ON Semiconductor Selector Guide − Power MOSFET Products MOSFET − Through−Hole RDS on Max (W) @ VGS = VDSS (V) 10 V 4.5 V/5.0 V* 2.5 V/2.7 V* 1.8 V QT Typ (nC) @ VGS = 4.5 V (5.0 V)/10 V* Max Rating Config. Page No. VN2222LL S 1095 0.35 2N7000 S 26 0.35


    Original     		PDF VN2222LL 2N7000 BS170 BS107 BS108 BS107A VN2410L O-220AB NTP125N02R NTP90N02 S1095 NTP13N10