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    N CHANNEL D- MOSFET Search Results

    N CHANNEL D- MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    N CHANNEL D- MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SI4563DY

    Abstract: No abstract text available
    Text: Si4563DY New Product Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.016 @ VGS = 10 V 8 0.019 @ VGS = 4.5 V 8 VDS (V) N Channel N-Channel 40 P Channel P-Channel –40 40 D TrenchFETr Power MOSFET D 100% Rg Tested


    Original     		Si4563DY Si4563DY-T1--E3 08-Apr-05 PDF

    list of P channel power mosfet

    Abstract: si4563 SI4563DY
    Text: Si4563DY New Product Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.016 @ VGS = 10 V 8 0.019 @ VGS = 4.5 V 8 VDS (V) N Channel N-Channel 40 P Channel P-Channel –40 40 D TrenchFETr Power MOSFET D 100% Rg Tested


    Original     		Si4563DY Si4563DY-T1--E3 52243--Rev. 24-Oct-05 list of P channel power mosfet si4563 PDF

    Si6866BDQ

    Abstract: No abstract text available
    Text: Si6866BDQ Vishay Siliconix New Product Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 20 ID (A) 0.0275 @ VGS = 4.5 V 6 0.040 @ VGS = 2.5 V 4.9 D D TSSOP-8 S1 1 G1 2 S2 3 G2 4 8 D 7 D D G1 6 D 5 D G2 Top View S1 S2 N-Channel MOSFET N-Channel MOSFET


    Original     		Si6866BDQ Si6866BDQ-T1 S-32675--Rev. 29-Dec-03 PDF

    si3529

    Abstract: Si3529DV SI3529DV-T1-E3
    Text: Si3529DV New Product Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel P Channel P-Channel rDS(on) (W) 0.125 @ VGS = 10 V 2.250 0.165 @ VGS = 4.5 V 1.95 0.215 @ VGS = –10 V –1.76 0.335 @ VGS = –4.5 V


    Original     		Si3529DV Si3529DV-T1--E3 51448--Rev. 01-Aug-05 si3529 SI3529DV-T1-E3 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V P-Channel 1000 V • 100 % Rg Tested


    Original     		SiA519EDJ SC-70-6 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V P-Channel 1000 V • 100 % Rg Tested


    Original     		SiA519EDJ SC-70-6 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V P-Channel 1000 V • 100 % Rg Tested


    Original     		SiA519EDJ SC-70-6 SiA533EDJ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Si9420DY

    Abstract: No abstract text available
    Text: Si9420DY N-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 200 1.0 @ VGS = 10 V "1.0 D D D D SO-8 N/C 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter


    Original     		Si9420DY S-47958--Rev. 15-Apr-96 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si3529DV New Product Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel P Channel P-Channel rDS(on) (W) 0.125 @ VGS = 10 V 2.250 0.165 @ VGS = 4.5 V 1.95 0.215 @ VGS = –10 V –1.76 0.335 @ VGS = –4.5 V


    Original     		Si3529DV Si3529DV-T1--E3 08-Apr-05 PDF

    Si9420DY

    Abstract: 70123
    Text: Si9420DY Siliconix N-Channel Enhancement-Mode MOSFET PRODUCT SUMMARY VDS V RDS(ON) (W) ID (A) 200 1.0 @ VGS = 10 V "1.0 D D D D SO-8 N/C 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		Si9420DY 18-Jul-08 70123 PDF

    Si9420DY

    Abstract: No abstract text available
    Text: Si9420DY Siliconix N-Channel Enhancement-Mode MOSFET PRODUCT SUMMARY VDS V RDS(ON) (W) ID (A) 200 1.0 @ VGS = 10 V "1.0 D D D D SO-8 N/C 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		Si9420DY S-56996--Rev. 03-Aug-98 PDF

    Si9420DY

    Abstract: No abstract text available
    Text: Si9420DY N-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 200 1.0 @ VGS = 10 V "1.0 D D D D SO-8 N/C 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter


    Original     		Si9420DY S-47958--Rev. 15-Apr-96 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si9420DY Siliconix N-Channel Enhancement-Mode MOSFET PRODUCT SUMMARY VDS V RDS(ON) (W) ID (A) 200 1.0 @ VGS = 10 V "1.0 D D D D SO-8 N/C 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		Si9420DY 08-Apr-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: V IS H A Y - S i4 5 0 0 D Y New Product Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel PRODUCT SUMMARY V d s (V) N-Channel 20 P-Channel Id (A) r D S (o n )


    OCR Scan     		S-00269-- 26-Apr-99 4500DY PDF

    Untitled

    Abstract: No abstract text available
    Text: Tem ic SÌ6928DQ S e m i c o n d u c t o r s Dual N-Channel 30-V D-S Rated MOSFET Product Summary V d s (V) rDS(on) (ß ) Id (A) 0.035 @ VGS = 10 V ± 4.0 0.050 @ Vqs = 4.5 V ± 3.4 30 Di Q 2 d o TSSOP-8 ,J n } C3l Ô Si Ô S' N -Channel M O SFET N -Channel M OSFET


    OCR Scan     		6928DQ S-49554--Rev. 07-Apr-97 PDF

    Untitled

    Abstract: No abstract text available
    Text: _ Si4500DY VISHAY Vishay Siliconix New Product Complementary MOSFET Half-Bridge N- and P-Channel PRODUCT SUMMARY V D S (V ) N-Channel 20 P-Channel -2 0 r D S (o n ) ( ) Id (A ) 0.030 @ VGS = 4.5 V ± 7 .0 0.040 @ VGS = 2.5 V ± 6 .0


    OCR Scan     		Si4500DY S2SM735 DD17flflT PDF

    si9940dy

    Abstract: D-16
    Text: Tem ic SÌ9940DY S e m ic o ndu c tor s Dual N-Channel Enhancement-Mode MOSFET Product Summary V d s V 50 r DS(on) (£2) I d (A) 0.05 @ V qs = 10 V ±5.3 0.07 @ V qs = 4.5 V ±4.5 SO-16* Di D j D j D2 D2D2 tu n Si Top View S2 S2 Si N-Channel MOSFET N-Channel MOSFET


    OCR Scan     		9940DY SO-16* SO-16 S-47958â 15-Apr-96 B254735 DD17flflti si9940dy D-16 PDF

    tic 2260

    Abstract: tnr 221 CBVK741B019 F63TNR FDS6961 FDS6961A FDS9953A L86Z
    Text: FAIRCHILD M IC D N D U C T D H April 1999 tm FDS6961 A Dual N-Channel Logic Level PowerTrench General Description MOSFET Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been


    OCR Scan     		FDS6961 tic 2260 tnr 221 CBVK741B019 F63TNR FDS6961A FDS9953A L86Z PDF

    25S16

    Abstract: No abstract text available
    Text: SÌ4542DY - SNicönix N- and P-Channel 30-V D-S MOSFET PRODUCT SUM M ARY V ds (V) N-Channel P-Channel r DS(ON) (-2) I d (A) 0.025 @ VGS = 10 V ± 6 .9 30 0.035 @ VGS = 4.5 V


    OCR Scan     		4542DY S-56944-- ov-98 25S16 PDF

    Untitled

    Abstract: No abstract text available
    Text: Temic SÌ4532DY S e m i c o n d u c t o r s Dual N- and P-Channel 30-V D-S Rated MOSFET Product Summary V d s (V) N-Channel 30 P-Channel -30 rDS(on) (Q ) I d (A) 0.065 @ VGs = 10 V ±3.9 0.095 @ VGs = 4.5 V ±3.1 0.085 @ VGS = -10 V ±3.5 0.19 @ VGs = -4.5 V


    OCR Scan     		4532DY S-49520--Rev. 18-Dec-96 PDF

    EIGHT MOSFET ARRAY

    Abstract: octal MOSFET ARRAY MOSFET ARRAY 15 pin pin diagram of MOSFET EIGHT n-channel MOSFET ARRAY 10X10 AN0130NA mosfet array
    Text: A T & T MELEC I C 2SE D • 0050021a 00028*45 4 ■ OCTAL HIGH-VOLTAGE N-CHANNEL MOSFET ARRAY_ AN0130NA PRELIMINARY ~T-*43-25 Monolithic N-Channel Enhancement-Mode Description The AN0130NA Octal High-Voltage N-Channel MOSFET Array contains eight N-Channel DMOS drivers configured


    OCR Scan     		AN0130NA T-93-2S AN0130NA 00G2flM7 EIGHT MOSFET ARRAY octal MOSFET ARRAY MOSFET ARRAY 15 pin pin diagram of MOSFET EIGHT n-channel MOSFET ARRAY 10X10 mosfet array PDF

    si4936dy

    Abstract: No abstract text available
    Text: Tem ic SÌ4936DY S e m i c o n d u c t o r s Dual N-Channel 30-V D-S Rated MOSFET Product Summary V DS(V) 30 •"DS(on) (Q ) Id (A) 0.037 @ VGS = 10 V ± 5.8 0.055 @ VGS = 4.5 V ±4.7 u D, SO-8 D, « -I d 3 O- G, 2 d2 it Ö Si N-Channel M O SFET N -Channel M O SFET


    OCR Scan     		4936DY S-49534-- 06-Qct-97 06-0ct si4936dy PDF

    Untitled

    Abstract: No abstract text available
    Text: Temic SÌ4542DY S e m i c o n d u c t o r s Dual N- and P-Channel 30-V D-S Rated MOSFET Product Summary V d s (V) 30 N-Channel P-Channel -30 rDS(on) (Q ) I d (A) 0.025 @ VGS = 10 V ± 6.9 0.035 @ VGS = 4.5 V ±5.8 0.032 @ VGS = -10 V ±6.1 0.045 @ VGS = -4.5 V


    OCR Scan     		4542DY S-54950--Rev. 29-Sep-97 S-54950-- PDF

    fds6930

    Abstract: No abstract text available
    Text: F/\IRCHII_0 M IC D N D U C T O R July 1998 tm FDS6930A Dual N-Channel, Logic Level, PowerTrench MOSFET G eneral D escription Features These N-Channel Logic Level MOSFETs are produced using Fairchild Sem iconductor's advanced PowerTrench process that has been


    OCR Scan     		FDS6930A fds6930 PDF