GRM55ER72A475K
Abstract: MURATA GRM55ER72A475K GRM55ER72A475
Text: Chip Monolithic Ceramic Capacitor Electrical Characteristics Data 2220 X7R 4.7uF 100V Murata Global Part No: GRM55ER72A475K 1. Dimension 3. Impedance/ESR - Frequency Equipment: 1000 T Impedance Impedance/ESR ohm W ( mm) L W T 5.7 +/-0.4 5.0 +/-0.4 2.5 +/-0.2
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GRM55ER72A475K
025max
CVHF-400
GRM55ER72A475K
MURATA GRM55ER72A475K
GRM55ER72A475
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GRM32ER61A106KA01
Abstract: GRM55DR72A105KA01 GRM55ER11H475KA01 GRM55ER72A475KA01 GRM32DR71H335KA88 GRM55DR61H106KA88 GRM55R GRM32NR72A104KA01 GRM32DR71C106KA01 GRM43ER72A225KA01
Text: PDF catalog is downloaded from!CAUTION the website for of Murata Manufacturing co., ltd. Therefore, it’s specifications areinsubject to change or oursmoking productsand/or in it may be discontinued without advance notice. Please check with our • Please
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GRM55
GRM55DR61H106KA88
GRM55DR72A105KA01
GRM55ER72A475KA01
GRM55RR71H105KA01
GRM55RR71H155KA01
GRM55ER11H475KA01
GRM55ER71H475KA01
GRM55RF52A474ZA01
GRM32ER61A106KA01
GRM32DR71H335KA88
GRM55R
GRM32NR72A104KA01
GRM32DR71C106KA01
GRM43ER72A225KA01
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grm55er71h475ka01
Abstract: CAPACITOR 33uF 150D GRM55DR72A105KA01 GRM32DR71H335KA88 GRM21BR61E105K GRM319R61A106KA19
Text: PDF catalog is downloaded from!CAUTION the website for of Murata Manufacturing co., ltd. Therefore, it’s specifications areinsubject to change or oursmoking productsand/or in it may be discontinued without advance notice. Please check with our • Please
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1000pF
100pF
grm55er71h475ka01
CAPACITOR 33uF 150D
GRM55DR72A105KA01
GRM32DR71H335KA88
GRM21BR61E105K
GRM319R61A106KA19
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ultrasonic motion detector
Abstract: WE 4r6 GRM21BR61E105K Diode T3D 57 T3D 46 DIODE marking w25 SMD T3D DIODE F-154 GNM 3150 GR731
Text: !Note • This PDF catalog is downloaded from the website of Murata Manufacturing co., ltd. Therefore, it’s specifications are subject to change or our products in it may be discontinued without advance notice. Please check with our sales representatives or product engineers before ordering.
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C02E-12
ultrasonic motion detector
WE 4r6
GRM21BR61E105K
Diode T3D 57
T3D 46 DIODE
marking w25 SMD
T3D DIODE
F-154
GNM 3150
GR731
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MURATA GRM15 -V2
Abstract: C02E GMA085 GRM188R60G106ME47 10uf cap MURATA GRM033 GCM murata catalog GRM022
Text: !Note • This PDF catalog is downloaded from the website of Murata Manufacturing co., ltd. Therefore, it’s specifications are subject to change or our products in it may be discontinued without advance notice. Please check with our sales representatives or product engineers before ordering.
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C02E-12
MURATA GRM15 -V2
C02E
GMA085
GRM188R60G106ME47 10uf cap
MURATA GRM033
GCM murata catalog
GRM022
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gcm155r71c104ka55d
Abstract: GCM32ER71E106KA57L GCM32 GCM1885C1H101JA16D nd 2981 GCM188R72A103KA37D GCM1885C1H102JA16D GCM188R71H102KA37D GCM155R71E473KA55D GCM188R71E474KA64D
Text: Multilayer Ceramic Chip Capacitors Cont. Digi-Key Tape and Reel Part No. Qty. Pricing Murata Part No. X5R 6.3 1812 100 Y5V 50 33µF 33µF 47µF 47µF 100µF .15µF 1.5µF ±10% ±20% ±10% ±20% ±20% +80, -20% +80, -20% 2.0 2.0 2.5 2.5 2.8 1.8 1.8 490-1919-1-ND
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490-1919-1-ND
490-1920-1-ND
490-1921-1-ND
490-1922-1-ND
490-1923-1-ND
490-1924-1-ND
490-1925-1-ND
490-1919-2-ND
490-1920-2-ND
490-1921-2-ND
gcm155r71c104ka55d
GCM32ER71E106KA57L
GCM32
GCM1885C1H101JA16D
nd 2981
GCM188R72A103KA37D
GCM1885C1H102JA16D
GCM188R71H102KA37D
GCM155R71E473KA55D
GCM188R71E474KA64D
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Untitled
Abstract: No abstract text available
Text: Capacitors > Monolithic Ceramic Capacitors Data Sheet Monolithic Ceramic Capacitors GRM55ER72A475KA01p 2220, X7R, 4.7µF, 100Vdc p: packaging code RoHS regulation conformity parts g e T e L W (in mm) • Dimensions ■ Packaging Length L 5.7mm±0.4mm Code
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GRM55ER72A475KA01p
100Vdc)
180mm
330mm
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Untitled
Abstract: No abstract text available
Text: Capacitors > Monolithic Ceramic Capacitors Data Sheet Monolithic Ceramic Capacitors GRM55ER72A475KA01p 2220, X7R, 4.7µF, 100Vdc p: packaging code RoHS regulation conformity parts g e T e L W (in mm) • Dimensions ■ Packaging Length L 5.7mm±0.4mm Code
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GRM55ER72A475KA01p
100Vdc)
180mm
330mm
100Vdc
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GRM1882C1H100J
Abstract: No abstract text available
Text: EGN16C105MK High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 50.5dBm typ. @ Psat High Efficiency: 65%(typ.) @ Psat Power Gain :19dB(typ.) @ f=1.6GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN16C105MK
25deg
D10MHz
45dBm
/-10MHz
GRM1882C1H100J
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Untitled
Abstract: No abstract text available
Text: EGN21C160I2D GaN-HEMT 160W High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 52.5dBm typ. @ Psat High Efficiency: 68%(typ.) @ Psat Power Gain : 18dB(typ.) @ f=2.14GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN21C160I2D
14GHz
25deg
/-10MHz
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Untitled
Abstract: No abstract text available
Text: EGN21C210I2D High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 53.0dBm typ. @ Psat -High Efficiency: 68%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN21C210I2D
14GHz
14GHz
25deg
/-10MHz
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mar 827
Abstract: 210w AF Power Amplifier CS3376C ATC100B JESD22-A114 TZY2Z010A001 MURATA GRM55ER72A475K
Text: EGN21C210I2D GaN-HEMT 210W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 53.0dBm typ. @ Psat -High Efficiency: 68%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN21C210I2D
14GHz
14GHz
/-10MHz
mar 827
210w AF Power Amplifier
CS3376C
ATC100B
JESD22-A114
TZY2Z010A001
MURATA GRM55ER72A475K
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EKZE101
Abstract: No abstract text available
Text: EGN21C210I2D GaN-HEMT 210W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 53.0dBm typ. @ Psat -High Efficiency: 68%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater
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14GHz
EGN21C210I2D
/-10MHz
48dBm
/-10MHz
EKZE101
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GRM1882C1H100J
Abstract: No abstract text available
Text: SGN27C210I2D High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 53.0dBm typ. @ Psat High Efficiency: 62%(typ.) @ Psat Power Gain : 16.3dB(typ.) @ f=2.655GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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SGN27C210I2D
655GHz
/-10MHz
48dBm
GRM1882C1H100J
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CS3376C
Abstract: EGN35C070I2D CS-3376C TZY2Z010A001 GRM188B11H102KA01D GSC364 HYB3500 JESD22-A114 MCR18EZPJ101 GRM188B11h
Text: EGN35C070I2D GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 48.8dBm typ. @ Psat ・High Efficiency: 60%(typ.) @ Psat ・Power Gain : 15.5dB(typ.) @ f=3.5GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN35C070I2D
43dBm
/-10MHz
CS3376C
EGN35C070I2D
CS-3376C
TZY2Z010A001
GRM188B11H102KA01D
GSC364
HYB3500
JESD22-A114
MCR18EZPJ101
GRM188B11h
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max16833
Abstract: 9r5m GCM188R71H102KA37D 30BQ100TRPBF IRLR3110 MAX16833B MAX16833EVKIT MAX16833AUE GCM188R71H GCM188R71H102KA37
Text: 19-5299; Rev 0; 6/10 MAX16833 Evaluation Kit Features The MAX16833 evaluation kit EV kit provides a proven design to evaluate the MAX16833 high-voltage HB LED driver with integrated high-side current sense. The EV kit is set up for boost and buck-boost configurations
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MAX16833
MAX16833/MAX16833B
9r5m
GCM188R71H102KA37D
30BQ100TRPBF
IRLR3110
MAX16833B
MAX16833EVKIT
MAX16833AUE
GCM188R71H
GCM188R71H102KA37
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2S110
Abstract: GRM188B11H102KA01D
Text: EGN26C070I2D GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 48.8dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Power Gain : 18dB(typ.) @ f=2.6GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN26C070I2D
/-10MHz
/-10MHz
2S110
GRM188B11H102KA01D
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EKZE101
Abstract: GaN amplifier 100W GRM55ER72A475K grm188b11h102ka01d 105w ATC100B Soshin JESD22-A114 MCR18 TZY2Z010A001
Text: EGN21C105I2D GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 50.3dBm typ. @ Psat -High Efficiency: 70%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN21C105I2D
14GHz
14GHz
/-10MHz
45dBm
EKZE101
GaN amplifier 100W
GRM55ER72A475K
grm188b11h102ka01d
105w
ATC100B
Soshin
JESD22-A114
MCR18
TZY2Z010A001
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B4846
Abstract: S21 Package GRM188B11H102KA01D CS3376C
Text: EGN21C105I2D GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 50.3dBm typ. @ Psat -High Efficiency: 70%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater
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14GHz
EGN21C105I2D
/-10MHz
45dBm
/-10MHz
B4846
S21 Package
GRM188B11H102KA01D
CS3376C
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6-10 Ghz RF Power 100w amplifier
Abstract: 2S110 GSC356-HYB2300 GRM55ER72A475K EGN26C070I2D GRM188B11H102KA01D 60Ghz GaN amplifier 100W GRM188B31H104KA92D JESD22-A114
Text: EGN26C070I2D GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 48.8dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Power Gain : 18dB(typ.) @ f=2.6GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN26C070I2D
/-10MHz
6-10 Ghz RF Power 100w amplifier
2S110
GSC356-HYB2300
GRM55ER72A475K
EGN26C070I2D
GRM188B11H102KA01D
60Ghz
GaN amplifier 100W
GRM188B31H104KA92D
JESD22-A114
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CS3376C
Abstract: GRM188B11H102KA01D ATC100B100JW500 risho GRM188B31H104KA92D EGN35C070I2D GSC364-HYB3500 JESD22-A114 MCR03EZPJ101 MCR18EZPJ101
Text: EGN35C070I2D GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 48.8dBm typ. @ Psat ・High Efficiency: 60%(typ.) @ Psat ・Power Gain : 15.5dB(typ.) @ f=3.5GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN35C070I2D
43dBm
/-10MHz
CS3376C
GRM188B11H102KA01D
ATC100B100JW500
risho
GRM188B31H104KA92D
EGN35C070I2D
GSC364-HYB3500
JESD22-A114
MCR03EZPJ101
MCR18EZPJ101
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Untitled
Abstract: No abstract text available
Text: MAX16833 Evaluation Kit Evaluates: MAX16833/MAX16833B General Description Features The MAX16833 evaluation kit EV kit provides a proven design to evaluate the MAX16833 high-voltage HB LED driver with integrated high-side current sense. The EV kit is set up for boost and buck-boost configurations
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MAX16833
MAX16833/MAX16833B
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Untitled
Abstract: No abstract text available
Text: EGN21C105I2D High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 50.3dBm typ. @ Psat -High Efficiency: 70%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater consistency
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EGN21C105I2D
14GHz
14GHz
25deg
/-10MHz
45dBm
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EGN26C070I2D
Abstract: No abstract text available
Text: EGN26C070I2D High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 48.8dBm typ. @ Psat High Efficiency: 70%(typ.) @ Psat Power Gain : 18dB(typ.) @ f=2.6GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN26C070I2D
25deg
/-10MHz
EGN26C070I2D
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