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    Murata Manufacturing Co Ltd GRM188B31H104KA92D

    CERAMIC CAPACITOR, MULTILAYER, CERAMIC, 50V, 10% +TOL, 10% -TOL, B, 10% TC, 0.1UF, SURFACE MOUNT, 0603
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    Quest Components GRM188B31H104KA92D 3,762,539
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    ComSIT USA GRM188B31H104KA92D 16,000
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    GRM188B31H104KA92D Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GRM188B31H104KA92D muRata Monolithic Ceramic Capacitors Original PDF

    GRM188B31H104KA92D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    EGN26C070I2D

    Abstract: No abstract text available
    Text: EGN26C070I2D High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 48.8dBm typ. @ Psat High Efficiency: 70%(typ.) @ Psat Power Gain : 18dB(typ.) @ f=2.6GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF EGN26C070I2D 25deg /-10MHz EGN26C070I2D

    6-10 Ghz RF Power 100w amplifier

    Abstract: 2S110 GSC356-HYB2300 GRM55ER72A475K EGN26C070I2D GRM188B11H102KA01D 60Ghz GaN amplifier 100W GRM188B31H104KA92D JESD22-A114
    Text: EGN26C070I2D GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 48.8dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Power Gain : 18dB(typ.) @ f=2.6GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF EGN26C070I2D /-10MHz 6-10 Ghz RF Power 100w amplifier 2S110 GSC356-HYB2300 GRM55ER72A475K EGN26C070I2D GRM188B11H102KA01D 60Ghz GaN amplifier 100W GRM188B31H104KA92D JESD22-A114

    CS3376C

    Abstract: GRM188B11H102KA01D ATC100B100JW500 risho GRM188B31H104KA92D EGN35C070I2D GSC364-HYB3500 JESD22-A114 MCR03EZPJ101 MCR18EZPJ101
    Text: EGN35C070I2D GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 48.8dBm typ. @ Psat ・High Efficiency: 60%(typ.) @ Psat ・Power Gain : 15.5dB(typ.) @ f=3.5GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF EGN35C070I2D 43dBm /-10MHz CS3376C GRM188B11H102KA01D ATC100B100JW500 risho GRM188B31H104KA92D EGN35C070I2D GSC364-HYB3500 JESD22-A114 MCR03EZPJ101 MCR18EZPJ101

    2S110

    Abstract: GRM188B11H102KA01D
    Text: EGN26C070I2D GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 48.8dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Power Gain : 18dB(typ.) @ f=2.6GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF EGN26C070I2D /-10MHz /-10MHz 2S110 GRM188B11H102KA01D

    chn 513

    Abstract: chn 135 GRM188B11H102KA01D CHN 219 GRM188B31H104KA92D grm188B31E105K RK73B1ETTD104J CHN 136 chn 238 RK73B1ETTD121J
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF 78K0/Ix2LED 78K0/IY2 78K0/IA2 78K0/IB2 U19666JJ1V0AN001 U19666JJ1V0AN chn 513 chn 135 GRM188B11H102KA01D CHN 219 GRM188B31H104KA92D grm188B31E105K RK73B1ETTD104J CHN 136 chn 238 RK73B1ETTD121J

    CHN 234 diode

    Abstract: dali master schematic GRM188B31H104KA92D DMX RECEIVER diode chn 115 dali power supply circuit diagram dmx512 RK73B1 chn 711 dali schematic
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF G0706 CHN 234 diode dali master schematic GRM188B31H104KA92D DMX RECEIVER diode chn 115 dali power supply circuit diagram dmx512 RK73B1 chn 711 dali schematic

    Untitled

    Abstract: No abstract text available
    Text: EGN35C070I2D High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 48.8dBm typ. @ Psat High Efficiency: 60%(typ.) @ Psat Power Gain : 15.5dB(typ.) @ f=3.5GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF EGN35C070I2D 25deg /-10MHz

    CS3376C

    Abstract: EGN35C070I2D CS-3376C TZY2Z010A001 GRM188B11H102KA01D GSC364 HYB3500 JESD22-A114 MCR18EZPJ101 GRM188B11h
    Text: EGN35C070I2D GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 48.8dBm typ. @ Psat ・High Efficiency: 60%(typ.) @ Psat ・Power Gain : 15.5dB(typ.) @ f=3.5GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF EGN35C070I2D 43dBm /-10MHz CS3376C EGN35C070I2D CS-3376C TZY2Z010A001 GRM188B11H102KA01D GSC364 HYB3500 JESD22-A114 MCR18EZPJ101 GRM188B11h