GRM55ER72A475KA01
Abstract: capacitor 2220
Text: Capacitors > Monolithic Ceramic Capacitors > Soldering Electrode GRM32/43/55 Data Sheet Monolithic Ceramic Capacitors GRM55ER72A475KA01p 2220, X7R, 4.7µF, 100Vdc p: packaging code g e T e L W (in mm) • Dimensions ■ Packaging Length L 5.70mm±0.40mm
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GRM32/43/55
GRM55ER72A475KA01p
100Vdc)
180mm
330mm
GRM55ER72A475KA01
capacitor 2220
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Untitled
Abstract: No abstract text available
Text: Capacitors > Monolithic Ceramic Capacitors Data Sheet Monolithic Ceramic Capacitors GRM55ER72A475KA01p 2220, X7R, 4.7µF, 100Vdc p: packaging code RoHS regulation conformity parts g e T e L W (in mm) • Dimensions ■ Packaging Length L 5.7mm±0.4mm Code
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GRM55ER72A475KA01p
100Vdc)
180mm
330mm
100Vdc
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Untitled
Abstract: No abstract text available
Text: Capacitors > Monolithic Ceramic Capacitors Data Sheet Monolithic Ceramic Capacitors GRM55ER72A475KA01p 2220, X7R, 4.7µF, 100Vdc p: packaging code RoHS regulation conformity parts g e T e L W (in mm) • Dimensions ■ Packaging Length L 5.7mm±0.4mm Code
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GRM55ER72A475KA01p
100Vdc)
180mm
330mm
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GRM55DR72J224KW01L
Abstract: gcm31c GCM31MR71H474KA37 GRM32B7U3D221JW31L LLC219R71C104MA01L GCM216 GCM155 GCM31MR71H334KA37 GRM188 GCM188
Text: Capacitors Monolithic Ceramic Capacitors GCM_R7 X7R High Dielectric Constant Type X7R 10/16/25/50V g e T e L Part Number GCM033 GCM155 GCM188* GCM216 GCM219 GCM21B GCM319 GCM31M GCM31C GCM32N GCM32R GCM32D GCM32E GCM43R GCM43E GCM55R L 0.6 ±0.03 1.0 ±0.05
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10/16/25/50V
GCM033
GCM155
GCM188*
GCM216
GCM219
GCM21B
GCM319
GCM31M
GCM31C
GRM55DR72J224KW01L
gcm31c
GCM31MR71H474KA37
GRM32B7U3D221JW31L
LLC219R71C104MA01L
GCM216
GCM155
GCM31MR71H334KA37
GRM188
GCM188
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G2225X7R225KT3AB
Abstract: MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6
Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.
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MRF6VP2600H
MRF6VP2600HR6
G2225X7R225KT3AB
MRF6VP2600KH
TUI-lf-9
UT-141C-25
DVB-T Schematic
tuo-4
MRF6VP2600H
AN1955
ATC100B470JT500XT
MRF6VP2600HR6
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transistor 1800MHz
Abstract: r.f. amplifier 30mhz
Text: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology
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RF3826
30MHz
2500MHz,
2500MHz
2500MHz)
transistor 1800MHz
r.f. amplifier 30mhz
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EI -40C
Abstract: No abstract text available
Text: RF3933 90W GaN WIDE-BAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Small Signal Gain = 21dB at 0.9GHz 48V Operation Typical
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RF3933
DS120306
EI -40C
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GRF31CR72A105KA01L
Abstract: grm43er61a476ke19l grm31cr60j226ke19l GRM31CR72E104KW03L GRM31CR71E475KA88L GRM31MR72A474KA35L GRM31CR60J476ME19L 3216 capacitor GRF32ER72A225KA11L X7R 1KV
Text: C44E1.pdf 04.4.6 Chip Monolithic Ceramic Capacitors for DC-DC Converters Chip Monolithic Ceramic Capacitors for DC-DC Converters C44E1.pdf 04.4.6 Murata's extensive and complete chip capacitor line up enables your DC-DC converters and voltage regulators to be compact and high performanced.
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C44E1
GRF31CR72A105KA01L
grm43er61a476ke19l
grm31cr60j226ke19l
GRM31CR72E104KW03L
GRM31CR71E475KA88L
GRM31MR72A474KA35L
GRM31CR60J476ME19L
3216 capacitor
GRF32ER72A225KA11L
X7R 1KV
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Untitled
Abstract: No abstract text available
Text: RFG1M09180 RFG1M09180 700MHZ to 1000MHZ 180W GaN 700MHZ TO 1000MHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features Advanced GaN HEMT Technology Typical Peak Modulated Power >240W Advanced Heat Sink Technology Single Circuit for 865MHz To
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RFG1M09180
700MHZ
1000MHZ
1000MHZ
RF400-2
865MHz
960MHz
47dBm
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Untitled
Abstract: No abstract text available
Text: RFG1M09090 700MHZ to 1000MHZ 90W GaN RFG1M09090 Proposed 700MHZ TO 1000MHZ 90W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features Advanced GaN HEMT Technology Typical Peak Modulated Power >120W Advanced Heat-Sink Technology
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RFG1M09090
700MHZ
1000MHZ
RFG1M09090
RF400-2
865MHz
960MHz
44dBm
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rf3826
Abstract: ERJ-3GEYJ821 ERJ-3GEYJ391 transistor 1800MHz
Text: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology
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RF3826
30MHz
2500MHz,
RF3826
2500MHz
2500MHz)
ERJ-3GEYJ821
ERJ-3GEYJ391
transistor 1800MHz
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RFHA1000
Abstract: No abstract text available
Text: RFHA1000 RFHA1000 50MHz to 1000MHz, 15W GaN Wideband Power Amplifier 50MHz TO 1000MHz, 15W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 15W Advanced Heat-Sink Technology
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RFHA1000
50MHz
1000MHz,
RFHA1000
1000MHz
DS121114
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RFG1M20180
Abstract: ATC800B820JT
Text: RFG1M20180 RFG1M20180 1.8GHZ to 2.2GHZ 180W GaN 1.8GHZ TO 2.2GHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features Advance GaN HEMT Technology Typical Peak Modulated Power > 180W Advanced Heat-Sink Technology Single Circuit for 1.8GHz to
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RFG1M20180
RFG1M20180
RF400-2
-36dBc
-55dBc
DS120418
ATC800B820JT
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Untitled
Abstract: No abstract text available
Text: RFHA1042 RFHA1042 225MHz to 450MHz 125W GaN Power Amplifier 225MHz TO 450MHz 125W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin, RF400-2 Features Advanced GaN HEMT Technology Peak Power 125W Wideband Single Circuit for 225 - 450MHz 48V Modulated Typical
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RFHA1042
225MHz
450MHz
RFHA1042
RF400-2
-26dBc
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Untitled
Abstract: No abstract text available
Text: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Hermetic 2-Pin Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz
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RF3931
900MHz
EAR99
RF3931
DS120306
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Untitled
Abstract: No abstract text available
Text: RF3934 120W GaN WIDEBAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain = 13dB at 2GHz 48V Operation Typical
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RF3934
RF3934
DS120306
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Untitled
Abstract: No abstract text available
Text: RFHA1003 RFHA1003 30MHz to 512MHz, 9W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology
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RFHA1003
30MHz
512MHz,
RFHA1003
512MHz
DS120216
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404j
Abstract: rf3826 transistor 1800MHz 100A0R9BT150X
Text: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology
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RF3826
30MHz
2500MHz,
RF3826
2500MHz
2500MHz)
404j
transistor 1800MHz
100A0R9BT150X
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ATC800A
Abstract: RF3931 ER35
Text: RF3931 30W GaN WIDE-BAND POWER AMPLIFIER Package Style: Flanged Ceramic Features Broadband Operation DC to 3GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain=15dB at 2GHz 48V Operation Typical Performance - Output Power 30W at P3dB
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RF3931
EAR99
RF3931
cellul01L
GRM55ER72A475KA01L
100uF,
ECE-V1HA101UP
ATC800A
ER35
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Untitled
Abstract: No abstract text available
Text: RFG1M20180 RFG1M20180 1.8 GHZ to 2.2GHZ 180W GaN 1.8GHZ TO 2.2GHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features Advance GaN HEMT technology Typical peak modulated power>180W Advanced heat-sink technology Single circuit for 1.8GHz to
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RFG1M20180
RFG1M20180
RF400-2
-36dBc
-55dBc
DS110406
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GRM55ER72A475KA01L
Abstract: RF3934 DS111005 GRM32NR72A104KA01L ATC800A330JT RF3934PCBA-410 140W ERJ8GEYJ100V GaN ADS
Text: RF3934 120W GaN WIDEBAND POWER AMPLIFIER Package: Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain=13dB at 2GHz 48V Operation Typical Performance
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RF3934
RF3934
DS111005
GRM55ER72A475KA01L
DS111005
GRM32NR72A104KA01L
ATC800A330JT
RF3934PCBA-410
140W
ERJ8GEYJ100V
GaN ADS
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Untitled
Abstract: No abstract text available
Text: RFG1M20090 RFG1M20090 90W GaN Power Amplifier 1.8GHz to 2.2GHz The RFG1M20090 is optimized for commercial infrastructure, military communication, and general purpose amplifier applications in the 1.8GHz to 2.2GHz frequency band, ideal for constant envelope, pulsed
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RFG1M20090
RFG1M20090
DS130823
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Untitled
Abstract: No abstract text available
Text: RF3933 RF3933 90W GaN Wideband Power Amplifier The RF3933 is a 48V, 90W high power discrete amplifier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general purpose broadband amplifier
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RF3933
RF3933
DS130905
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Untitled
Abstract: No abstract text available
Text: RF3934 RF3934 120W GaN Wideband Power Amplifier The RF3934 is a 48V 120W high power discrete amplifier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general purpose broadband amplifier
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RF3934
RF3934
DS131206
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