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    EGN16C105MK

    Abstract: 105w JESD22-A114
    Text: EGN16C105MK GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 50.5dBm typ. @ Psat ・High Efficiency: 65%(typ.) @ Psat ・Power Gain :19dB(typ.) @ f=1.6GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF EGN16C105MK Total154 EGN16C105MK 105w JESD22-A114

    GRM1882C1H100J

    Abstract: No abstract text available
    Text: EGN16C105MK High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 50.5dBm typ. @ Psat High Efficiency: 65%(typ.) @ Psat Power Gain :19dB(typ.) @ f=1.6GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF EGN16C105MK 25deg D10MHz 45dBm /-10MHz GRM1882C1H100J

    Untitled

    Abstract: No abstract text available
    Text: EGN16C105MK GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 50.5dBm typ. @ Psat ・High Efficiency: 65%(typ.) @ Psat ・Power Gain :19dB(typ.) @ f=1.6GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF EGN16C105MK