AN-808
Abstract: AN-847 AN-903 AN-979 EIA-485
Text: National Semiconductor Application Note 979 Todd Nelson March 1995 Introductlon mum configuration of two nodes; and with the full load of 32 nodes. The terms used in the specification are: VOA True output voltage with respect to ground This application note discusses the EIA-485 standard for
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EIA-485
RS-485,
TIA/EIA-485-A.
AN-808
AN-847
AN-903
AN-979
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LT015PD
Abstract: lt015
Text: LT015PD x I x x x x x x x x x x x x x x x x x x x 1 Features ● ● ● High output max[mum optical powe! output: 40 mW Wavelength. 830nm Single transverse mode Applications Optical disk memories Medical apparatus Optical floppy disks c Optical memory cards
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LT015PD
830nm
LT015PD
lt015
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667 transistor ecb
Abstract: EVL32-060 A50L-0001-0109
Text: Mechanical Drawings All Dimensions in inches mm . AX-5W Case 106 .037(0.94) .043(1.09) .048(1.22) •053(1.35) 1.0(25.4) 1.0(25.4) MI NI MUM MI NI MUM 330(8.38) .340(8.64) .360(9.14) 350(8.89)! T T 130(3.30) _ 145(3.68) 340(8.64) . 3 60 ( 9. 1 4) r*1.0(25.4)
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O-237
667 transistor ecb
EVL32-060 A50L-0001-0109
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SCR TRANSISTOR
Abstract: TO92HS R/PCR 6061 triac CERSOT-23 sot89 diode bm scr 209
Text: Mechanical Drawings All Dimensions in inches mm . Case 106 AX-5W . 0 3 7 ( 0 . 9 4 ] . 0 4 3 ( 1 . 0 9 ] 1 . 0 ( 2 5 . 4 ) M I N I MUM 3 3 0 ( 8 . 3 8 ) 3 5 0 ( 8 . 8 9 ) 1 30(3 .30) 145 (3.68) 1 . 0 ( 2 5 . 4 ) MI NI MUM Case B-M Case A .20(5.1) .22(5.6)
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O-237
SCR TRANSISTOR
TO92HS
R/PCR 6061 triac
CERSOT-23
sot89 diode bm
scr 209
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cq303
Abstract: No abstract text available
Text: CATALOG LISTINO M I C R O S WI T CH SWITCH-ENCLOSED i mum or MMCimts-Mtfrwtu mum m m B Z V 6-2R Q 9^ F E D . M F R . CODE 9 1 9 2 9 ± .0 1 0 417 h* 21.1 72 DIA. H O L E - ± .0 3 0 0 t r CVJ 1 CO > N CD If Z y QZ 5 0 OIA. X ,18 WIDE H A R D E N E D S T E E L R O LL E R .
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CQ3039e
C055969
1956N
219REF'
2RQ69
1SA-12S,
MP-T78
cq303
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Untitled
Abstract: No abstract text available
Text: CDLL6309 • ZENER DIODE •LEADLESS PACKAGE FOR SURFACE MOUNT thru • LOW REVERSE LEAKAGE CHARACTERISTICS CDLL6349 • LOW NOISE CHARACTERISTICS • DOUBLE PLUG CONSTRUCTION • METALLURGICALLY BONDED -1 MAX MUM RATINGS Junct on & Storage Tem perature:
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500mW
200mA:
CDLL6309
CDLL6349
20hown
CDLL6309
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Untitled
Abstract: No abstract text available
Text: SERIES F Serie F Series F Coaxial connector with high mechanical and electrical stability for a maxi Koaxialsteckverbinder m it hoher elektrischer u nd m echanischer Stabifitat mum operating frequency of approx. 2 GHz. fu r eine m axim ale Betriebsfrequenz von ca. 2 GHz.
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D-84526
74K102-K0OA1
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ATT21C498
Abstract: 22C498 AC176
Text: June 1995 - 3s MUM Microelectronics ATT20C408: 16-Bit Interface RAMDAC Dual Clock Synthesizers PrecisionDAC Technology Features Description • 170/135 MHz speed grades — 170 MHz 2:1 multiplex 8-bit pseudocolor — 73 MHz true-color operation The ATT20C408 CMOS RAMDAC provides the
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ATT20C408:
16-Bit
24-bit
24-bit,
ATT20C408
ATT20C408-17M68
ATT20C408-13M68
ATT20C
4C18-13
ATT21C498
22C498
AC176
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BO-63
Abstract: No abstract text available
Text: DS1045 DALLAS SEMICONDUCTOR DS1045 4-Bit Dual Programmable Delay Line PIN ASSIGNMENT FEATURES • All-silicon time delay < o o [ 3 [ A1 [ A2 [ A3 [ GND [ 4 EA • Programmable via four input pins A0 • Programmable increments of 3 to 5 ns with a mini mum of 9 ns and a maximum of 84 ns
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DS1045
DS1045
16-pin
BO-63
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diode 1.5 ke 36 ca
Abstract: 40N160
Text: □IXYS High Voltage BIMOSFET M onolithic Bipolar MOS Transistor IXBH 40N140 IXBH 40N160 VCES ^C25 VCE sat tfi N-Channel, Enhancement Mode 1400/1600 V 33 A 7V 35 ns TO-247 AD Preliminary data Symbol Test Conditions Max mum Ratings 40N140 40N160 V CES
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40N140
40N160
O-247
40N160
D-68623
diode 1.5 ke 36 ca
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC4840 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC484Q Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. N F = l.ldB , |S2 ie|2= 13dB f=lGHz MAXI MUM RATI NGS (Ta = 2 5°C) CHARACTERISTIC Collector-Base Voltage
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2SC4840
2SC484Q
51-uasc
-j250
--20mA
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Untitled
Abstract: No abstract text available
Text: DESIGNED FOR USE WITH RG-188A/U FLEX CABLE CABLE ENTRY DIAMETER M IN I MUM FERRULE CONTACT H O U SIN G ELECTRICAL Nominal Impedance Ohms 50 Interface Dimensions MIL-STD-348A, Frequency Range (GHz) DC to MAX Operating Frequency of Cable per MIL-C-17 VSWR
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RG-188A/U
MIL-STD-348A,
MIL-C-17
ASTMA582,
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Untitled
Abstract: No abstract text available
Text: 3SK165 SONY GaAs N-Channel Dual-Gate MES FET Description The 3SK165 is a GaAs N -Channel D ual-G ate MES FET for low noise UHF amplifiers and mixers. Low noise and high gain characteristics are accomplished by opti mum mask pattern design. Easier high frequency circuit
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3SK165
3SK165
800MHz
2000MHz
0G20b32
M-254
2Qb33
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION - LOC . ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. DIST REVISIONS CM 00 LTR DESCRIPTION w POST TO WI THSTAND IN BOTH DI RECTI ONS 1 3 NEWTONS 3 L B S MI NI MUM SHOWN WI THOUT DI SLODGI NG.
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31MAR2000
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Untitled
Abstract: No abstract text available
Text: P R O D U C T IN FO R M A T IO N High-Performance LED The exceptionally low thermal droop of this device allows baseband video transmission with ultimate quality and minimum distortion. The double lens optical system provides for opti mum coupling of power into the fiber.
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100mA
1-800-96M
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IXGH30N30
Abstract: DIXYS
Text: DIXYS HIPerFAST IGBT IXGH30N30 VCES ^C25 V CE sat tfi = = = = 300 60 1.6 180 V A V ns P re lim in a ry d a ta Symbol Test Conditions V CES ^ Maxi mum Ratings = 25°C to 150°C 300 V = 25°C to 150°C; RGE = 1 M il 300 V Continuous ±20 V Transient ±30
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IXGH30N30
125oC
DIXYS
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das5v4
Abstract: das5v7 LM435 Densitron led densitron lm2261 LM2043 LM435 DENSITRON densitron lm24 LM780 el 803 s
Text: PENSITRON mum imm ENCE TION IDE DENSITRON ALPHANUMERIC CHARACTEFi MODULES SELECTION GUIDE Form at M odel # O verall Size W H D Viewinj 3Area Char. W H H eght TN +5|W H NTN +5 H STN +5 ± 5 1 H PAGE 1 Oct-92 B a cklig h t Type Suggested B acklight Inverter #
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Oct-92
LM465
LM301
LM407
LM412
LM431
LM2012
LM2015
LM2020
LM2128
das5v4
das5v7
LM435
Densitron led
densitron lm2261
LM2043
LM435 DENSITRON
densitron lm24
LM780
el 803 s
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voice synthesis pwm
Abstract: NJU3811M-XX 64-nibble "Piezo Buzzer" 5v 1amx
Text: N JU 3 8 1 1 4-B IT SINGLE-CH WITH VOICE PR E L P MICROPROCESSOR SYNTHES IZER GENERAL DESCRIPTION M l NARY PACKAGE OUTLINE The NJU3811 is a C-MOS 4-bit single-chip micro processor with 6-bit PCM voice synthesizer,operated 2.4V mini mum. The microprocessor contains 1k-word ROM, 64-nibble RAM,
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NJU3811
NJU3811
64-nibble
0004TT0
voice synthesis pwm
NJU3811M-XX
"Piezo Buzzer" 5v
1amx
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Untitled
Abstract: No abstract text available
Text: <9H*> N J U 3 8 1 1 4-B IT SINGLE-CH WITH VOICE PR E L P MICROPROCESSOR SYNTHES IZER GENERAL DESCRIPTION The NJU3811 is a C-MOS 4-bit single-chip micro processor with 6-bit PCM voice synthesizer,operated 2.4V mini mum. The microprocessor contains 1k-word ROM, 64-nibble RAM,
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NJU3811
64-nibble
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1XFH32N50
Abstract: 1XFH 30n5
Text: H VDSS HiPerFET Power MOSFETs 500 V 500 V IXFH/IXFT 30N50 IXFH/IXFT 32N50 N-Channel Enhancement Mode Highdv/dt, Lowtrr, HDMOS™ Family D DS on 0.16 Q 0.15 Q ^D25 30 A 32 A t. < 250 ns Preliminary data Symbol Maxi mum Rati ngs Test Conditions V DSS T = 25°C to 150°C
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30N50
32N50
32N50
O-247
O-268
1XFH32N50
1XFH
30n5
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Untitled
Abstract: No abstract text available
Text: .312 REVISIONS DESCRIPTION DESIGNED FOR USE WITH HEX CABLE ENTRY DIAMETER MINI MUM H 0 U S ING CONTACT CM .500 MAX ACROSS CORNERS OF HEX. o .250-36, UN5-2A MODIFIED TO 0.240 ’O' RING REV .141 S/R MAX PANEL B . 145 . 0375 REVISED DATE APPROVED K.L m 7-24-96 8/7/96
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0U20-0262-01
19DEC01
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Untitled
Abstract: No abstract text available
Text: NOTES: MA T E R I A L : CONTACTS: SOLDER A R EF [.03947 TÏP I TABS: HOUSING: —X fieu i-z ALTERNATE: PPA D/MENS/ON APPLIES WHEN ACTUATOR IS IN CLOSED DIMENSION APPLIES WHEN ACTUATOR IS IN OP E N MAXI MUM Li — 6. A C T U AT OR ENGAGEMENT PACKAGE PER 7\ T O L E R A N C E
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C17200
Abstract: C17300 ZZ-R-765
Text: REVISIONS DESCRIPTION DESIGNED FOR USE WITH REV .085 S.R. RG 40 5/U REF PLANE A1 REVISED PER ECO-11-005294 CABLE ENTRY DIAMETER M IN I MUM DATE APPROVED 13APR11 HMR .088 .021 HOUSING CONTACT OSM PLUG DIM NOTES: 1. PI CTORI AL VI EW IS AFTER CRI MPI NG 2. M IN S T R A IG H T CABLE LENG TH: . 1 7 5
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405/U)
ECO-11-005294
13APR11
ASTM-A484
ASTM-A582,
ASTM-D-U57
C17300,
C17200,
ZZ-R-765
ASTM-A380
C17200
C17300
ZZ-R-765
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Untitled
Abstract: No abstract text available
Text: REVISIONS DESCRIPTION D E S IG N E D FOR U SE W IT H REV .141 DIA S/R CABLE 01 2 REDRAWN IN CAD PER ECN 98-0001 C A B LE EN T R Y D IA M E T E R M IN I MUM HOUSING CONTACT DATE APPROVED PATLAN mm Tic. .143 .036 RECOMMENDED MOUNTING HOLE ELECTRICAL Nominal Impedance Ohms
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MIL-STD-348A,
MIL-STD-202,
MIL-STD-202.
21PECIFIED
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