125OC
Abstract: 32N50Q
Text: IXFJ 32N50Q VDSS HiPerFETTM Power MOSFETs ID cont RDS(on) trr Q-Class N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low trr, HDMOSTM Family = 500 = 32 = 0.15 < 250 V A W ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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32N50Q
32N50Q
125OC
125OC
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32N50Q
Abstract: 125OC
Text: VDSS IXFK 32N50Q IXFX 32N50Q HiPerFETTM Power MOSFETs Q-Class trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 IDM 32 120 A
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32N50Q
247TM
125OC
728B1
123B1
728B1
065B1
32N50Q
125OC
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IXFR32N50
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 30N50Q IXFR 32N50Q Electrically Isolated Back Surface ID25 500 V 29 A 500 V 30 A trr ≤ 250 ns RDS(on) 0.16 Ω 0.15 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family
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ISOPLUS247TM
30N50Q
32N50Q
30N50
32N50
32N50
247TM
IXFR32N50
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IXFR32N50
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 30N50Q IXFR 32N50Q Electrically Isolated Back Surface ID25 RDS(on) 0.16 Ω 0.15 Ω 500 V 29 A 500 V 30 A trr ≤ 250 ns N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family
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ISOPLUS247TM
30N50Q
32N50Q
30N50
32N50
32N50
125OC
IXFR32N50
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30N50
Abstract: IXFR32N50
Text: HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 32N50 IXFR 30N50 Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family ID25 500 V 30 A 500 V 29 A trr £ 250 ns RDS(on) 0.15 W 0.16 W Preliminary data Symbol Test Conditions
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ISOPLUS247TM
32N50
30N50
30N50
IXFR32N50
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFH/IXFT 30N50 IXFH/IXFT 32N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Maximum Ratings T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW VGS VGSM Continuous Transient ID25 TC = 25°C IDM IAR TC = 25°C
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30N50
32N50
125OC
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td 4950
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFET IXFX 32N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS ID25 RDS on = 500 V = 32 A = 0.15 W trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW
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32N50
td 4950
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fast IXFX
Abstract: MD 202 TO-264-aa TO-268 transistor tl 187 IXFK 125OC 32N50Q
Text: VDSS HiPerFETTM Power MOSFETs Q-Class IXFK/IXFX 30N50Q IXFK/IXFX 32N50Q ID25 RDS on 500 V 30 A 0.16 Ω 500 V 32 A 0.15 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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30N50Q
32N50Q
247TM
O-264
125OC
728B1
fast IXFX
MD 202
TO-264-aa
TO-268
transistor tl 187
IXFK
125OC
32N50Q
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30N50
Abstract: 32N50 32N50Q IXFR30N50 IXFR32N50
Text: HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS Electrically Isolated Back Surface IXFR 30N50Q IXFR 32N50Q ID25 500 V 29 A 500 V 30 A trr £ 250 ns RDS(on) 0.16 W 0.15 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Preliminary data Symbol Test Conditions
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ISOPLUS247TM
30N50Q
32N50Q
247TM
125OC
30N50
32N50
32N50Q
IXFR30N50
IXFR32N50
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32N50Q
Abstract: 4925 B transistor 125OC 30n50 728B1
Text: IXFH 32N50Q IXFT 32N50Q HiPerFETTM Power MOSFETs Q-Class VDSS trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500 500 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C
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32N50Q
125OC
reserves10
728B1
123B1
728B1
065B1
32N50Q
4925 B transistor
125OC
30n50
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32n50
Abstract: 32n50k transistor ixfh application note 30N50 1910 0016 diode 125OC IXFH30N50 IXFH32N50
Text: HiPerFETTM Power MOSFETs IXFH/IXFT 30N50 IXFH/IXFT 32N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Maximum Ratings T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW VGS VGSM Continuous Transient ID25 TC = 25°C IDM IAR TC = 25°C
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30N50
32N50
125OC
32n50
32n50k
transistor ixfh application note
30N50
1910 0016 diode
125OC
IXFH30N50
IXFH32N50
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 32N50Q VDSS ID25 = 500 V = 30 A = 0.16 Ω = 250 ns RDS on trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS VDGR
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ISOPLUS247TM
32N50Q
125OC
728B1
123B1
728B1
065B1
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td 4950
Abstract: 32N50 fast IXFX
Text: HiPerFETTM Power MOSFET IXFX 32N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS ID25 RDS on = 500 V = 32 A = 0.15 W trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW
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32N50
PLUS247TM
td 4950
32N50
fast IXFX
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32n50
Abstract: ixfh 26 n 49 30N50
Text: HiPerFETTM Power MOSFETs IXFH/IXFT 30N50 IXFH/IXFT 32N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW VGS VGSM Continuous Transient ID25 TC = 25°C IDM IAR TC = 25°C
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30N50
32N50
O-247
32N50
ixfh 26 n 49
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Untitled
Abstract: No abstract text available
Text: VDSS HiPerFETTM Power MOSFETs Q-Class IXFH/IXFT 30N50Q IXFH/IXFT 32N50Q Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500 500 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C IDM TC = 25°C,
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30N50Q
32N50Q
32N50
125OC
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32N50
Abstract: 30n50
Text: H iPerFET Power M O SFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family IXFH 30N50 IXFH 32N50 p V DSS ^D25 500 V 30 A 0.16 f i 500 V 32 A trr £ 250 ns 0.15 Û DS on Preliminary data Sym bol Test C onditions V DSS Tj = 2 5 °C to 1 5 0 °C
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30N50
32N50
32N50
5A/25
6A/25
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Untitled
Abstract: No abstract text available
Text: n ixY S HiPerFAST IGBT IXGH 32N50B CES lC25 v CE sat % fi Symbol Maximum Ratings Test Conditions T a = 2 5 °C to 1 5 0 °C 500 V T j = 25° C to 150° C; R, . = 1 MU 500 V ’ GES Continuous +20 V V Transient +30 V GEM_ _ ^C2S T c = 2 5 °C 60 A ^C90
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32N50B
O-247
t-150
32N50B
32N50BU1
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Untitled
Abstract: No abstract text available
Text: DIXYS IXFJ 32N50Q v¥ DSS 500 V A — CO to HiPerFET Power MOSFETs — ^D cont R Q-Class DS(on) N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low trr, HDMOS™ Family tr r 0.15 ß < 250 ns — Preliminary data sheet Maximum Ratings Symbol Test Conditions
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32N50Q
Cto150
T0-220
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Untitled
Abstract: No abstract text available
Text: DIXYS Advanced Technical Information HiPerFET Power MOSFETs Q Class IXFH 32N50Q IXFT 32N50Q trr < 250 ns V DSS Tj =25°Cto150°C 500 V Vocn Tj = 25° C to 150° C; RGS= 1 M n 500 V v G5 Continuous ±20 V vGSM Transient ±30 V ^D25 Tc =25°C Kn m Test C onditions
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32N50Q
32N50Q
Cto150
O-247
O-268
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32N50
Abstract: No abstract text available
Text: HiPerFAST IGBT with Diode IXGH 32N50BU1 IXGH 32N50BU1S v CES ^C25 v CE sat «1, Symbol Test Conditions Maximum Ratings V ces Tj = 25CC to 150CC 500 v CGR T j = 25°C to 150“ C; RGE = 1 M£2 500 V v GES Continuous ±20 V v¥gem Transient ±30 V ^C25 T0 = 25°C
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32N50BU1
32N50BU1S
O-247
32N50BU1S)
32N90BU1
32NS0BU1S
B2-22
32N50
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30N50
Abstract: No abstract text available
Text: □ IXYS X H H ifl JL æ* HiPerFET Power MOSFETs i x f h / ix f t SONSO IXFH/IXFT 32N50 N-Channel Enhancement Mode Highdv/dt, Lowtrr, HDMOS™ Family Symbol V v DGR VGSM L = 25°C to 150°C 25°C to 150°C; RGS = 1 M£i = 25°C = 25°C pulse width limited
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32N50
30N50
30N50
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Untitled
Abstract: No abstract text available
Text: □ IXYS P re lim in a ry D ata S heet 32N50B 32N50BS HiPerFAST IGBT V CES ^C25 V CE sat t 'fi 500 V 60 A 2.0 V 80 ns TO-247 SMD (32N50BS) m Symbol Test Conditions V CES Ta = 2 5 C to 150 C 500 V V ¥cgr T j = 2 5 C to 150 C; RGE= 1 M 500 V V v GES
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IXGH32N50B
IXGH32N50BS
O-247
32N50BS)
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1XFH32N50
Abstract: 1XFH 30n5
Text: H VDSS HiPerFET Power MOSFETs 500 V 500 V IXFH/IXFT 30N50 IXFH/IXFT 32N50 N-Channel Enhancement Mode Highdv/dt, Lowtrr, HDMOS™ Family D DS on 0.16 Q 0.15 Q ^D25 30 A 32 A t. < 250 ns Preliminary data Symbol Maxi mum Rati ngs Test Conditions V DSS T = 25°C to 150°C
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30N50
32N50
32N50
O-247
O-268
1XFH32N50
1XFH
30n5
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32N50
Abstract: No abstract text available
Text: n ix Y S IXGH 32N50B IXGH 32N50BS HiPerFAST IGBT v CES ^C25 ^ C E sa t tfi = = = = 500 V 60 A 2.0 V 80 ns 4C ¿) Ae Maximum Ratings Sym bol Test Conditions V CES Tj = 25°C to 150°C 500 V v CGR Tj = 25°C to 150°C; R OE = 1 M Q 500 V v GES v GEM Continuous
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32N50B
32N50BS
O-247
32N50BS)
B2-17
32N50
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