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    MTP20 Price and Stock

    Rochester Electronics LLC MTP20N06V

    N-CHANNEL POWER MOSFET
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    DigiKey MTP20N06V Bulk 2,410 1,567
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    onsemi MTP20N15EG

    MOSFET N-CH 150V 20A TO220AB
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    Samtec Inc FMTP-20-D-03.85-01

    .050" TIGER EYE IDC TWISTED PAIR
    Free Sample
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    DigiKey FMTP-20-D-03.85-01 Bulk 1
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    Avnet Americas FMTP-20-D-03.85-01 Bulk 1
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    Newark FMTP-20-D-03.85-01 Bulk 1
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    Powell Electronics FMTP-20-D-03.85-01 1 1
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    Master Electronics FMTP-20-D-03.85-01
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    Sager FMTP-20-D-03.85-01 1 1
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    Samtec Inc FMTP-20-D-18.00-01

    .050" TIGER EYE IDC TWISTED PAIR
    Free Sample
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    DigiKey FMTP-20-D-18.00-01 Bulk 1
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    Mouser Electronics FMTP-20-D-18.00-01 5
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    Master Electronics FMTP-20-D-18.00-01
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    Sager FMTP-20-D-18.00-01 1
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    JRH Electronics FMTP-20-D-18.00-01

    .050" TIGER EYE IDC TWISTED PAIR
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    DigiKey FMTP-20-D-18.00-01 Bulk 1
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    Find more MTP20 price and stock on Findchips.com

    MTP20 Datasheets (50)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MTP20N05 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    MTP20N06 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    MTP20N06 Unknown FET Data Book Scan PDF
    MTP20N06 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    MTP20N06V Motorola TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM Original PDF
    MTP20N06V On Semiconductor Power MOSFET 20 A, 60 V Original PDF
    MTP20N06V Toshiba Power MOSFETs Cross Reference Guide Original PDF
    MTP20N06V/D On Semiconductor TMOS POWER FET 20 AMPERES 60 VOLTS Original PDF
    MTP20N06V-D On Semiconductor Power MOSFET 20 Amps, 60 Volts N-Channel TO-220 Original PDF
    MTP20N08 Fairchild Semiconductor (MTP20N08 / MTP20N10) N-Channel Power MOSFETs Scan PDF
    MTP20N08 Fairchild Semiconductor N-Channel Power MOSFETs, 20 A, 60-100 V Scan PDF
    MTP20N08 Motorola European Master Selection Guide 1986 Scan PDF
    MTP20N08 Motorola Switchmode Datasheet Scan PDF
    MTP20N08 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MTP20N08 Unknown FET Data Book Scan PDF
    MTP20N08 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    MTP20N08 National Semiconductor N-Channel Power MOSFETs Scan PDF
    MTP20N10 Fairchild Semiconductor (MTP20N08 / MTP20N10) N-Channel Power MOSFETs Scan PDF
    MTP20N10 Fairchild Semiconductor N-Channel Power MOSFETs, 20 A, 60-100 V Scan PDF
    MTP20N10 Motorola European Master Selection Guide 1986 Scan PDF

    MTP20 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN569

    Abstract: MTP20N20E
    Text: MTP20N20E Preferred Device Power MOSFET 20 Amps, 200 Volts N–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for


    Original     		PDF MTP20N20E r14525 MTP20N20E/D AN569 MTP20N20E

    Untitled

    Abstract: No abstract text available
    Text: MTP20N06V Preferred Device Power MOSFET 20 Amps, 60 Volts N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power


    Original     		PDF MTP20N06V MTP20N06V/D

    Untitled

    Abstract: No abstract text available
    Text: <£e.mi-Concluctoi ZPioducti, Inc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (201 376-2922 (212) 227-6005 FAX: (201) 376-8960 MTP20N10E Designer's Data Sheet TMOS IV Power Field Effect Transistor TMOS POWER FET 20 AMPERES ros(on) = 0.15 OHM


    Original     		PDF MTP20N10E

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTP20N20E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP20N20E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 20 AMPERES 200 VOLTS


    Original     		PDF MTP20N20E/D MTP20N20E MTP20N20E/D*

    MTP20P06

    Abstract: MTM20P06 AN569 MJE210 motorola 6810
    Text: Order this data sheet by MTM20P06/D MoToRom SEMICONDUCTOR TECHNICAL DATA MTM20P06 Data Sheet Designer’s MTP20P06 Power Field Effect Enhancement-Mode P=ChanneI silicon These Gate TMOS TMOS switching solenoid o Silicon Power applications and relay FETs are designed


    Original     		PDF MTM20P06/D MTM20P06 MTP20P06 MTP20P06 MTM20P06 AN569 MJE210 motorola 6810

    MTP20N06V equivalent

    Abstract: TMOS E-FET TMOS power FET AN569 MTP20N06V
    Text: MOTOROLA Order this document by MTP20N06V/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet V MTP20N06V Designer's TMOS Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This


    Original     		PDF MTP20N06V/D MTP20N06V MTP20N06V/D* MTP20N06V equivalent TMOS E-FET TMOS power FET AN569 MTP20N06V

    MTP20N15E

    Abstract: No abstract text available
    Text: MTP20N15E Preferred Device Power MOSFET 20 Amps, 150 Volts N–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for


    Original     		PDF MTP20N15E r14525 MTP20N15E/D MTP20N15E

    20N15E

    Abstract: MTP20N15EG 20N15 MTP20N15E
    Text: MTP20N15E Power MOSFET 20 Amps, 150 Volts N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for


    Original     		PDF MTP20N15E O-220 MTP20N15E/D 20N15E MTP20N15EG 20N15 MTP20N15E

    ldc 4000

    Abstract: No abstract text available
    Text: MTP20N20E Preferred Device Power MOSFET 20 Amps, 200 Volts N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for


    Original     		PDF MTP20N20E O-220 r14525 MTP20N20E/D ldc 4000

    20N15E

    Abstract: No abstract text available
    Text: MTP20N15E Power MOSFET 20 Amps, 150 Volts N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for


    Original     		PDF MTP20N15E MTP20N15E/D 20N15E

    Untitled

    Abstract: No abstract text available
    Text: MTP20N20E Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V) I(D) Max. (A)20 I(DM) Max. (A) Pulsed I(D)12 @Temp (øC)100 IDM Max (@25øC Amb)60 @Pulse Width (s) (Condition)10u Absolute Max. Power Diss. (W)125# Minimum Operating Temp (øC)-55


    Original     		PDF MTP20N20E

    MTP20N06V equivalent

    Abstract: AN569 MTP20N06V
    Text: MTP20N06V Preferred Device Power MOSFET 20 Amps, 60 Volts N–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power


    Original     		PDF MTP20N06V r14525 MTP20N06V/D MTP20N06V equivalent AN569 MTP20N06V

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


    Original     		PDF SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N

    mosfet cross reference

    Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local


    Original     		PDF

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTP20N20E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTP20N20E T M O S E-FET™ P o w e r F ield E ffe c t T ra n s is to r Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This advanced TMOS E-FET is designed to withstand high


    OCR Scan     		PDF MTP20N20E/D MTP20N20E 21A-06

    transistor M 839

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S heet MTP20N20E T M O S E -FE T ™ P o w er Field E ffe c t T ran sisto r M otorola P refe rred D evice N-Channel Enhancement-Mode Silicon Gate ir This advanced TMOS E -F E T is designed lo w ithstand high


    OCR Scan     		PDF MTP20N20E transistor M 839

    MTP20N10

    Abstract: 1RF531
    Text: NATL N-Channel Power MOSFETs Continued 2N67S5 2N6756 IRF130 IRF132 IRF133 IRF530 S 1-6 IRF532 IRF533 MTP20N10 2N6757 IRF230 IRF231 lD @ TC = 25 'C (A) •rD Tc = 100-C (A) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-2Û4AA (42) TO-204AA


    OCR Scan     		PDF 2N67S5 2N6756 IRF130 IRF131 IRF132 IRF133 IRF530 1RF531 IRF532 IRF533 MTP20N10

    C - 4834 transistor

    Abstract: K30 mosfet MOSFET K30 C 4834 transistor transistor k30 4835 mosfet 014 IR MOSFET Transistor FET K30 K30 FET mosfet 4835
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet TM O S E -FE T ™ P o w er Field E ffe c t T ran sisto r MTP20N20E M o to rola Preferred D e vic e N-Channel Enhancement-Mode Silicon Gate This advanced TMOS E-FET is designed to withstand high


    OCR Scan     		PDF LflE-04 1BE-03 C - 4834 transistor K30 mosfet MOSFET K30 C 4834 transistor transistor k30 4835 mosfet 014 IR MOSFET Transistor FET K30 K30 FET mosfet 4835

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA P ro d u c t Preview MTP20N06V TM O S V Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate T M O S P O W E R FET 20 A M P E R E S 6 0 V O LTS T M O S V is a new te ch n o lo g y d e sig n e d to a chie ve an o n -re s is tance area prod u ct a bo u t o n e -h a lf th a t of sta n d ard M O SFETs. This


    OCR Scan     		PDF MTP20N06V

    TP20N

    Abstract: No abstract text available
    Text: MOT OR OL A SC CXSTRS/R 4bE F MOTOROLA • SEMICONDUCTOR D ■ b3b?254 00^3251 Order this data sheet by MTP20N06/D 2 «flO Tb _ ^ 3 f - / TECHNICAL DATA Designer's Data Sheet M TP20N 06 Pow er M OSFET N-Channel Enhancement-Mode Silicon Gate


    OCR Scan     		PDF MTP20N06/D TP20N O-220AB MTP20N06

    mtm20n10

    Abstract: MTP20N10 TP20N
    Text: MOTOROLA SC XSTRS/R 14'E D I F b3b?S54 QDTQQflS ? | MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MTM20N10 MTP20N08 MTP20N10 Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto r N-Channel Enhancement-Mode Silicon Gate TMOS TM O S PO W ER F ET s 20 A M P E R E S


    OCR Scan     		PDF T01E3ANOE TQ-204AA 21A-04 TQ-220AB mtm20n10 MTP20N10 TP20N

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SC IME P I b3b?254 00*^030 3 a I XSTRS/R F MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MTP20P06 Advance Information P o w e r Field E ffe c t T ra n sisto r P-Channel Enhancement-Mode Silicon Gate TMOS TM O S POW ER FET 20 A M PER ES rDS(on = 0.2 OHM


    OCR Scan     		PDF MTP20P06 21A-04 O-22QAB

    MTP20N10E

    Abstract: 100X1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MTP20N10E Designer's Data Sheet T M O S IV P o w er Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate T M O S P O W E R FET 20 AMPERES rD S o n = 0 1 5 O H M 100 V O L T S T h is a d v a n c e d " E " s e rie s o f T M O S p o w e r M O S F E T s is


    OCR Scan     		PDF MTP20N10E 21A-04 O-220AB MTP20N10E 100X1